公开(公告)号：US20120107364A1

公开(公告)日：2012-05-03

申请号：US13382468

申请日：2010-07-07

申请人： Masunori Kajikawa ,  Masahito Sugiura ,  Kazuyuki Atarashi ,  Emi Shimizu ,  Chiemi Matsumi ,  Yukie Saitoh

发明人： Masunori Kajikawa ,  Masahito Sugiura ,  Kazuyuki Atarashi ,  Emi Shimizu ,  Chiemi Matsumi ,  Yukie Saitoh

IPC分类号： A61K39/00 ,  A61P37/04 ,  C12N5/16 ,  A61P35/00 ,  C07K16/30 ,  C12N15/13

CPC分类号： C07K16/30 ,  A61K2039/505 ,  C07K16/3046 ,  C07K2317/73

摘要： By utilizing an SST-REX method, a cDNA encoding a protein expressed on a cell surface or secreted from the cell was selected from a cDNA library derived from a cancer cell line. Monoclonal antibodies against the protein encoding the selected cDNA were prepared. The in vitro and in vivo anti-cancer activities and binding to various cancer cells lines were examined. As a result, a monoclonal antibody which binds to a PODXL2 protein, and which had excellent anti-cancer activities was found. Further, a region including an epitope of the antibody was successfully identified, and the amino acid sequences of variable regions of a light chain and a heavy chain were successfully determined.

摘要翻译： 通过使用SST-REX方法，从源自癌细胞系的cDNA文库中选择编码在细胞表面表达或从细胞分泌的蛋白质的cDNA。 制备针对编码所选cDNA的蛋白质的单克隆抗体。 检查体外和体内抗癌活性并结合各种癌细胞系。 结果发现结合PODXL2蛋白的单克隆抗体具有优异的抗癌活性。 此外，成功鉴定了包含抗体的表位的区域，成功地测定了轻链和重链的可变区的氨基酸序列。

公开(公告)号：US08828387B2

公开(公告)日：2014-09-09

申请号：US13382468

申请日：2010-07-07

申请人： Masunori Kajikawa ,  Masahito Sugiura ,  Kazuyuki Atarashi ,  Emi Shimizu ,  Chiemi Matsumi ,  Yukie Saitoh

发明人： Masunori Kajikawa ,  Masahito Sugiura ,  Kazuyuki Atarashi ,  Emi Shimizu ,  Chiemi Matsumi ,  Yukie Saitoh

IPC分类号： A61K39/395 ,  C07K16/30 ,  A61K39/00

CPC分类号： C07K16/30 ,  A61K2039/505 ,  C07K16/3046 ,  C07K2317/73

摘要： By utilizing an SST-REX method, a cDNA encoding a protein expressed on a cell surface or secreted from the cell was selected from a cDNA library derived from a cancer cell line. Monoclonal antibodies against the protein encoding the selected cDNA were prepared. The in vitro and in vivo anti-cancer activities and binding to various cancer cells lines were examined. As a result, a monoclonal antibody which binds to a PODXL2 protein, and which had excellent anti-cancer activities was found. Further, a region including an epitope of the antibody was successfully identified, and the amino acid sequences of variable regions of a light chain and a heavy chain were successfully determined.

摘要翻译： 通过使用SST-REX方法，从源自癌细胞系的cDNA文库中选择编码在细胞表面表达或从细胞分泌的蛋白质的cDNA。 制备针对编码所选cDNA的蛋白质的单克隆抗体。 检查体外和体内抗癌活性并结合各种癌细胞系。 结果发现结合PODXL2蛋白的单克隆抗体具有优异的抗癌活性。 此外，成功鉴定了包含抗体的表位的区域，成功地测定了轻链和重链的可变区的氨基酸序列。

公开(公告)号：US08858944B2

公开(公告)日：2014-10-14

申请号：US13701408

申请日：2011-06-02

申请人： Koichi Kino ,  Toshihiro Kai ,  Mitsuhiro Matsumoto ,  Masunori Kajikawa ,  Masahito Sugiura ,  Emi Shimizu

发明人： Koichi Kino ,  Toshihiro Kai ,  Mitsuhiro Matsumoto ,  Masunori Kajikawa ,  Masahito Sugiura ,  Emi Shimizu

IPC分类号： A61K39/395 ,  G01N33/68 ,  G01N33/50 ,  C12Q1/68 ,  C07K16/28 ,  A61K39/00

CPC分类号： C07K16/42 ,  A61K39/39533 ,  A61K2039/505 ,  C07K16/2803 ,  C07K2317/73 ,  C12Q1/6888 ,  G01N33/505 ,  G01N33/6893 ,  G01N2333/4703

摘要： The present invention provides an agent for the prophylaxis or therapy of autoimmune diseases or allergic diseases, which contains an anti-Embigin antibody, particularly an anti-Embigin antibody showing cytotoxicity or a cytotoxicity inducing activity, an agent for the prophylaxis or therapy of diseases involving Th17 cell, and a cytotoxic agent to Th17 cell. In addition, an agent for detection of Th17 cell, which contains an anti-Embigin antibody, a convenient detection method of Th17 cell, which uses the agent, a method of efficiently delivering a drug and the like in a Th17 cell selective manner, which uses an anti-Embigin antibody, and a drug delivery system to Th17 cell are provided.

摘要翻译： 本发明提供了一种预防或治疗自身免疫性疾病或过敏性疾病的药剂，其含有抗Embigin抗体，特别是显示细胞毒性或细胞毒性诱导活性的抗Embigin抗体，用于预防或治疗涉及 Th17细胞，Th17细胞的细胞毒剂。 另外，作为Th17细胞的检测用试剂，其含有抗Embigin抗体，使用该试剂的Th17细胞的方便的检测方法，Th17细胞选择性有效地输送药物等的方法， 使用抗Embigin抗体，提供了Th17细胞的药物递送系统。

公开(公告)号：US20130121914A1

公开(公告)日：2013-05-16

申请号：US13701408

申请日：2011-06-02

申请人： Koichi Kino ,  Toshihiro Kai ,  Mitsuhiro Matsumoto ,  Masunori Kajikawa ,  Masahito Sugiura ,  Emi Shimizu

发明人： Koichi Kino ,  Toshihiro Kai ,  Mitsuhiro Matsumoto ,  Masunori Kajikawa ,  Masahito Sugiura ,  Emi Shimizu

IPC分类号： A61K39/395 ,  C12Q1/68 ,  G01N33/68

CPC分类号： C07K16/42 ,  A61K39/39533 ,  A61K2039/505 ,  C07K16/2803 ,  C07K2317/73 ,  C12Q1/6888 ,  G01N33/505 ,  G01N33/6893 ,  G01N2333/4703

摘要： The present invention provides an agent for the prophylaxis or therapy of autoimmune diseases or allergic diseases, which contains an anti-Embigin antibody, particularly an anti-Embigin antibody showing cytotoxicity or a cytotoxicity inducing activity, an agent for the prophylaxis or therapy of diseases involving Th17 cell, and a cytotoxic agent to Th17 cell. In addition, an agent for detection of Th17 cell, which contains an anti-Embigin antibody, a convenient detection method of Th17 cell, which uses the agent, a method of efficiently delivering a drug and the like in a Th17 cell selective manner, which uses an anti-Embigin antibody, and a drug delivery system to Th17 cell are provided.

公开(公告)号：US20140242085A1

公开(公告)日：2014-08-28

申请号：US14238143

申请日：2011-08-12

申请人： Yoshitsugu Miyazaki ,  Satoshi Yamagoe ,  Masunori Kajikawa ,  Masahito Sugiura ,  Reiko Itoh ,  Hirotaka Kumagai

发明人： Yoshitsugu Miyazaki ,  Satoshi Yamagoe ,  Masunori Kajikawa ,  Masahito Sugiura ,  Reiko Itoh ,  Hirotaka Kumagai

IPC分类号： C07K16/14 ,  G01N33/569

CPC分类号： C07K16/14 ,  A61K2039/505 ,  C07K14/38 ,  C07K2317/34 ,  G01N33/56961 ,  G01N2333/38

摘要： As a result of the analysis by an SST-REX method so as to identify a target molecule for treating and testing an Aspergillus fumigatus infection, a YMAF1 protein has been found out, which is mainly localized in the cell wall of Aspergillus fumigatus. Moreover, it has been found out that YMAF1 protein-deficient Aspergillus fumigatus has reduced spore-forming ability and pathogenicity. Further, it has been found out that the survival rate of experimental mice having aspergillosis (invasive Aspergillus model mice) is improved by preparing and administering an antibody against the YMAF1 protein. Furthermore, it has been found out that Aspergillus fumigatus can be detected with a favorable sensitivity by an ELISA system using the antibody.

摘要翻译： 作为通过SST-REX法分析以鉴定用于治疗和测试烟曲霉感染的靶分子的结果，已经发现YMAF1蛋白主要位于烟曲霉的细胞壁中。 此外，已经发现YMAF1蛋白缺乏的烟曲霉具有降低的孢子形成能力和致病性。 此外，已经发现，通过制备和施用针对YMAF1蛋白的抗体，改善了具有曲霉菌病（侵入性曲霉属模型小鼠）的实验小鼠的存活率。 此外，已经发现通过使用抗体的ELISA系统可以以良好的灵敏度检测烟曲霉。

公开(公告)号：US20090246373A1

公开(公告)日：2009-10-01

申请号：US12063517

申请日：2006-07-06

申请人： Mitsuhiro Tachibana ,  Masahito Sugiura ,  Takashi Nishimori ,  Kohichi Satoh

发明人： Mitsuhiro Tachibana ,  Masahito Sugiura ,  Takashi Nishimori ,  Kohichi Satoh

IPC分类号： C23C16/06 ,  G05B13/02

CPC分类号： C23C16/14 ,  C23C16/45523 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877

摘要： A metal film with a lowered resistance by controlling a crystal structure. A tungsten film is formed through a first tungsten film formation in which a first tungsten film with amorphous content is formed by alternately executing multiple times a supplying a metal base material gas such as WF6 gas and supplying a hydrogen compound gas such as SiH4 gas, with a purge executed between the two gas supply by supplying an inert gas such as Ar gas or N2 gas and a second tungsten film formation in which a second tungsten film is formed by simultaneously supplying the WF6 gas and a reducing gas such as H2 gas onto the first tungsten film. The amorphous content in the first tungsten film is controlled by adjusting the length of time over which the purge is executed following the SiH4 gas supply.

摘要翻译： 通过控制晶体结构，具有降低的电阻的金属膜。 通过第一钨膜形成钨膜，其中通过交替执行多次提供诸如WF 6气体的金属基材气体并且将诸如SiH 4气体的氢化合物气体供应到第一钨膜，形成具有无定形含量的第一钨膜， 通过供给诸如Ar气体或N 2气体的惰性气体在两个气体供给之间执行的清洗以及通过同时将WF 6气体和诸如H 2气体的还原气体同时供给到第二钨膜形成的第二钨膜形成物 第一钨膜。 通过调节在SiH 4气体供应之后进行吹扫的时间长度来控制第一钨膜中的无定形含量。

公开(公告)号：US20090045517A1

公开(公告)日：2009-02-19

申请号：US11994339

申请日：2006-06-23

申请人： Masahito Sugiura ,  Yasutaka Mizoguchi ,  Yasushi Aiba

发明人： Masahito Sugiura ,  Yasutaka Mizoguchi ,  Yasushi Aiba

IPC分类号： H01L23/52 ,  C23C16/44 ,  H01L21/44

CPC分类号： C23C16/14 ,  C23C16/45527 ,  H01L21/28562 ,  H01L21/76856 ,  H01L21/76876 ,  H01L21/76877

摘要： A tungsten film with a lower specific resistance and a lower fluorine concentration over its boundary with the base barrier layer, which adheres to the barrier layer with a high level of reliability, compared to tungsten films formed through methods in the related art, is formed.The tungsten film is formed through a process in which a silicon-containing gas is delivered to a wafer M placed within a processing container 14 and a process executed after the silicon-containing gas supply process, in which a first tungsten film 70 is formed by alternately executing multiple times, a tungsten-containing gas supply step for supplying a tungsten-containing gas and a hydrogen compound gas supply step for supplying a hydrogen compound gas with no silicon content with a purge step in which an inert gas is supplied into the processing container and/or an evacuation step for evacuating the processing container executed between the tungsten-containing gas supply step and the hydrogen compound gas supply step.

摘要翻译： 形成了与通过现有技术中形成的钨膜相比，具有比其阻挡层更低的电阻率和较低的氟浓度的钨膜，其与通过相关技术形成的钨膜相比，以高可靠性粘附到阻挡层。 通过将含硅气体输送到放置在处理容器14内的晶片M和在含硅气体供给工序之后进行的工序，形成钨膜，其中第一钨膜70由 交替执行多次，用于提供含钨气体的含钨气体供给步骤和用于向不加入硅的氢化合物气体供给氢化合物气体的氢化合物气体供给步骤，其中向所述处理中供给惰性气体的净化步骤 容器和/或排气步骤，用于抽空在含钨气体供给步骤和氢气复合气体供给步骤之间执行的处理容器。

公开(公告)号：US20050079708A1

公开(公告)日：2005-04-14

申请号：US10673648

申请日：2003-09-30

申请人： Hideaki Yamasaki ,  Tsukasa Matsuda ,  Atsushi Gomi ,  Tatsuo Hatano ,  Masahito Sugiura ,  Yumiko Kawano ,  Gert Leusink ,  Fenton McFeely ,  Sandra Malhotra

发明人： Hideaki Yamasaki ,  Tsukasa Matsuda ,  Atsushi Gomi ,  Tatsuo Hatano ,  Masahito Sugiura ,  Yumiko Kawano ,  Gert Leusink ,  Fenton McFeely ,  Sandra Malhotra

IPC分类号： C23C16/16 ,  H01L21/285 ,  H01L21/768 ,  H01L21/44

CPC分类号： H01L21/76843 ,  C23C16/16 ,  H01L21/28556 ,  H01L21/76841

摘要： A method for depositing metal layers on semiconductor substrates by a thermal chemical vapor deposition (TCVD) process. The TCVD process utilizes high flow rate of a dilute process gas containing a metal-carbonyl precursor to deposit a metal layer. In one embodiment of the invention, the metal-carbonyl precursor can be selected from at least one of W(CO)6, Ni(CO)4, Mo(CO)6, Co2(CO)8, Rh4(CO)12, Re2(CO)10, Cr(CO)6, and Ru3(CO)12. In another embodiment of the invention, a method is provided for depositing a W layer from a process gas comprising a W(CO)6 precursor at a substrate temperature of about 410° C. and a chamber pressure of about 200 mTorr.

摘要翻译： 一种通过热化学气相沉积（TCVD）工艺在半导体衬底上沉积金属层的方法。 TCVD工艺利用含有羰基金属前体的稀释工艺气体的高流速来沉积金属层。 在本发明的一个实施方案中，羰基金属前体可以选自W（CO）6，Ni（CO）4，Mo（CO）6，Co 2（CO）8，Rh 4（CO）12， Re 2（CO）10，Cr（CO）6和Ru 3（CO）12）。 在本发明的另一个实施方案中，提供了一种方法，用于在约410℃的基底温度和约200mTorr的室压下从包含W（CO）6前体的工艺气体中沉积W层。

公开(公告)号：US6126753A

公开(公告)日：2000-10-03

申请号：US310132

申请日：1999-05-12

申请人： Hiroshi Shinriki ,  Yijun Liu ,  Masahito Sugiura

发明人： Hiroshi Shinriki ,  Yijun Liu ,  Masahito Sugiura

IPC分类号： C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/00

CPC分类号： C23C16/45574 ,  C23C16/405 ,  C23C16/409 ,  C23C16/4411 ,  C23C16/45565 ,  C23C16/45572 ,  C23C16/4586

摘要： A single-substrate-processing CVD apparatus is used for forming a BST thin film on a semiconductor wafer while supplying a first process gas containing a mixture of Ba(thd).sub.2 and Sr(thd).sub.2, and a second process gas containing Ti(O-iPr)(thd).sub.2 or Ti(thd).sub.2. Precursors of Ba and Sr have lower activation energies and higher resistivities than precursors of Ti. The first and second process gases are supplied from a shower head which has a group of first spouting holes for spouting the first process gas and a group of second spouting holes for spouting the second process gas. The group of the second spouting holes are designed to have diameters gradually decreasing in radial directions outward from the center of a shower region, such that the second process gas is supplied at a spouting rate gradually decreasing in radial directions outward from the center.

摘要翻译： 使用单基板处理CVD装置在半导体晶片上形成BST薄膜，同时供给包含Ba（thd）2和Sr（thd）2的混合物的第一工艺气体和含有Ti（ O-iPr）（thd）2或Ti（thd）2。 Ba和Sr的前体比Ti的前体具有更低的活化能和更高的电阻率。 第一和第二工艺气体由具有一组第一喷射孔的喷淋头供应，用于喷射第一处理气体和一组用于喷射第二处理气体的第二喷射孔。 第二喷射孔组被设计成具有从喷淋区域的中心向外径向逐渐减小的直径，使得以从中心向外径向逐渐减小的喷射速率供给第二处理气体。

公开(公告)号：US08168539B2

公开(公告)日：2012-05-01

申请号：US11994339

申请日：2006-06-23

申请人： Masahito Sugiura ,  Yasutaka Mizoguchi ,  Yasushi Aiba

发明人： Masahito Sugiura ,  Yasutaka Mizoguchi ,  Yasushi Aiba

IPC分类号： H01L21/44

CPC分类号： C23C16/14 ,  C23C16/45527 ,  H01L21/28562 ,  H01L21/76856 ,  H01L21/76876 ,  H01L21/76877

摘要： A tungsten film with a lower specific resistance and a lower fluorine concentration over its boundary with the base barrier layer, which adheres to the barrier layer with a high level of reliability, compared to tungsten films formed through methods in the related art, is formed. The tungsten film is formed through a process in which a silicon-containing gas is delivered to a wafer M placed within a processing container 14 and a process executed after the silicon-containing gas supply process, in which a first tungsten film 70 is formed by alternately executing multiple times, a tungsten-containing gas supply step for supplying a tungsten-containing gas and a hydrogen compound gas supply step for supplying a hydrogen compound gas with no silicon content with a purge step in which an inert gas is supplied into the processing container and/or an evacuation step for evacuating the processing container executed between the tungsten-containing gas supply step and the hydrogen compound gas supply step.

摘要翻译： 形成了与通过现有技术中形成的钨膜相比，具有比其阻挡层更低的电阻率和较低的氟浓度的钨膜，其与通过相关技术形成的钨膜相比，以高可靠性粘附到阻挡层。 通过将含硅气体输送到放置在处理容器14内的晶片M和在含硅气体供给工序之后进行的工序，形成钨膜，其中第一钨膜70由 交替执行多次，用于提供含钨气体的含钨气体供给步骤和用于向不加入硅的氢化合物气体供给氢化合物气体的氢化合物气体供给步骤，其中向所述处理中供给惰性气体的净化步骤 容器和/或排气步骤，用于抽空在含钨气体供给步骤和氢气复合气体供给步骤之间执行的处理容器。