公开(公告)号：US20110005454A1

公开(公告)日：2011-01-13

申请号：US12664935

申请日：2008-06-16

申请人： Matthias Schreck ,  Stefan Gsell ,  Martin Fischer

发明人： Matthias Schreck ,  Stefan Gsell ,  Martin Fischer

IPC分类号： C30B25/02 ,  H05H1/46

CPC分类号： H01J37/32018 ,  C23C16/27 ,  C23C16/503 ,  C23C16/511 ,  C23C16/517 ,  H01J37/32009 ,  H01J37/32027 ,  H01J37/32192 ,  H01J37/32339 ,  H01J37/32541

摘要： A plasma reactor and a method for production on wafers over a large area of monocrystalline diamond layers. The plasma reactor includes at least two flat electrodes having surfaces orientated towards each other, the electrodes being delimited respectively by an edge; a plasma region producing a plasma between the surfaces of the electrodes with an ion saturation current density of equal to or greater than 0.001 A/cm2, wherein a gas is introduced into the plasma region; and a device supplying microwaves having at least one frequency, the microwaves radiating into the plasma region and introducing a power into the plasma region contributing to the plasma production. The ion saturation current density of equal to or greater than 0.001 A/cm2 is maintained by controlling at least one of (a) a spacing between the electrodes, (b) the power of the microwaves, and (c) the frequency of the microwaves.

摘要翻译： 等离子体反应器和在大面积单晶金刚石层上在晶片上生产的方法。 等离子体反应器包括至少两个具有朝向彼此定向的表面的平坦电极，电极分别由边缘界定; 在离子饱和电流密度等于或大于0.001A / cm 2的电极表面之间产生等离子体的等离子体区域，其中气体被引入等离子体区域; 以及提供具有至少一个频率的微波的装置，所述微波辐射到所述等离子体区域中，并将功率引入到有助于所述等离子体生成的所述等离子体区域中。 通过控制（a）电极之间的间隔，（b）微波的功率和（c）微波的频率中的至少一个来维持等于或大于0.001A / cm 2的离子饱和电流密度 。

公开(公告)号：US20130143022A1

公开(公告)日：2013-06-06

申请号：US13703812

申请日：2011-06-16

申请人： Matthias Schreck ,  Stefan Gsell ,  Martin Fischer

发明人： Matthias Schreck ,  Stefan Gsell ,  Martin Fischer

IPC分类号： C30B25/18 ,  C30B29/04 ,  C30B25/04

CPC分类号： C30B25/18 ,  C23C16/0281 ,  C23C16/27 ,  C23C16/277 ,  C23C16/279 ,  C30B23/04 ,  C30B25/04 ,  C30B25/183 ,  C30B29/04 ,  H01L21/02376 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02444 ,  H01L21/02447 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02516 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/02647 ,  Y10T428/30

摘要： The present invention relates to a method for producing diamond layers, wherein firstly, in a first growing step, diamond is grown on a growing surface of a off axis or a off-axis heterosubstrate in such a way that a texture width, in particular a polar and/or azimuthal texture width, of a diamond layer produced during the growth decreases with increasing distance from the substrate and then, in a second growing step, diamond is grown in such a way that the texture width of the diamond layer remains substantially constant as the distance from the substrate further increases, and lattice planes of the substrate being inclined by an angle greater than zero with respect to the growing surface.

摘要翻译： 本发明涉及一种用于生产金刚石层的方法，其中首先，在第一生长步骤中，将金刚石在离轴或离轴异底物的生长表面上生长，使得织构宽度，特别是 在生长期间产生的金刚石层的极性和/或方位纹理宽度随着离开衬底的距离的增加而减小，然后在第二生长步骤中，以使金刚石层的纹理宽度保持基本恒定的方式生长金刚石 随着距衬底的距离进一步增加，并且衬底的晶格面相对于生长表面倾斜大于零的角度。

公开(公告)号：US20070084398A1

公开(公告)日：2007-04-19

申请号：US10555330

申请日：2004-05-03

申请人： Matthias Schreck ,  Stefan Gsell ,  Bernd Stritzker

发明人： Matthias Schreck ,  Stefan Gsell ,  Bernd Stritzker

IPC分类号： C30B7/00 ,  C30B21/02 ,  C30B28/06

CPC分类号： C30B25/18 ,  C30B7/00 ,  C30B25/105 ,  C30B29/04 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02439 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02527

摘要： This invention relates to a method for the production of diamond films with low misorientation through the deposition of diamond on a film system, whereby the film system exhibits a substrate film made of monocrystalline silicon or silicon carbide, at least one buffer film arranged on that, and at least one metal film made of a refractory metal arranged on that, whereby the diamond is deposited on the at least one metal film.

摘要翻译： 本发明涉及通过在膜系统上沉积金刚石来制造具有低取向度的金刚石膜的方法，由此膜系统显示由单晶硅或碳化硅制成的衬底膜，至少一个缓冲膜， 以及至少一个由难熔金属制成的金属膜，其上布置有金属膜，由此金刚石沉积在至少一个金属膜上。

公开(公告)号：US07396408B2

公开(公告)日：2008-07-08

申请号：US10555330

申请日：2004-05-03

申请人： Matthias Schreck ,  Stefan Gsell ,  Bernd Stritzker

发明人： Matthias Schreck ,  Stefan Gsell ,  Bernd Stritzker

IPC分类号： C30B25/12 ,  C30B25/14

CPC分类号： C30B25/18 ,  C30B7/00 ,  C30B25/105 ,  C30B29/04 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02439 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02527

摘要： This invention relates to a method for the production of diamond films with low misorientation through the deposition of diamond on a film system, whereby the film system exhibits a substrate film made of monocrystalline silicon or silicon carbide, at least one buffer film arranged on that, and at least one metal film made of a refractory metal arranged on that, whereby the diamond is deposited on the at least one metal film.

摘要翻译： 本发明涉及通过在膜系统上沉积金刚石来制造具有低取向度的金刚石膜的方法，由此膜系统显示由单晶硅或碳化硅制成的衬底膜，至少一个缓冲膜， 以及至少一个由难熔金属制成的金属膜，其上布置有金属膜，由此金刚石沉积在至少一个金属膜上。