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公开(公告)号：US20120111496A1
公开(公告)日：2012-05-10
申请号：US13285408
申请日：2011-10-31
申请人： Maxime Cadotte , Luc Guerin , Van Thanh Truong , Steve Whitehead
发明人： Maxime Cadotte , Luc Guerin , Van Thanh Truong , Steve Whitehead
CPC分类号： H01L24/799 , B08B7/0042 , B23K2103/42 , B23K2103/50 , B32B38/0008 , B32B38/10 , B32B43/006 , B32B2457/14 , H01L21/02076 , H01L21/31127 , H01L24/27 , H01L2924/01006 , H01L2924/01033 , H01L2924/01057 , H01L2924/01074 , H01L2924/01079 , H01L2924/014 , H01L2924/05442 , H01L2924/07025 , H01L2924/12042 , H01L2924/3025 , H01L2924/40501 , Y10S156/93 , Y10S156/941 , Y10T156/11 , Y10T156/1158 , Y10T156/1917 , H01L2924/00
摘要： A method for laser ashing of polyimide for a semiconductor manufacturing process using a structure, the structure comprising a supporting material attached to a semiconductor chip by a polyimide glue, includes releasing the supporting material from the polyimide glue, such that the polyimide glue remains on the semiconductor chip; and ashing the polyimide glue on the semiconductor chip using an ablating laser.
摘要翻译： 一种使用结构的半导体制造方法的聚酰亚胺的激光灰化方法，包括通过聚酰亚胺胶粘在半导体芯片上的支撑材料的结构，包括从聚酰亚胺胶释放支撑材料，使得聚酰亚胺胶保持在 半导体芯片; 并使用烧蚀激光将半导体芯片上的聚酰亚胺胶粉化。
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公开(公告)号：US08999107B2
公开(公告)日：2015-04-07
申请号：US13285408
申请日：2011-10-31
申请人： Maxime Cadotte , Luc Guerin , Van Thanh Truong , Steve Whitehead
发明人： Maxime Cadotte , Luc Guerin , Van Thanh Truong , Steve Whitehead
IPC分类号： B32B38/10 , H01L21/301 , H01L21/02 , B08B7/00 , B23K26/40 , H01L21/311 , H01L23/00
CPC分类号： H01L24/799 , B08B7/0042 , B23K2103/42 , B23K2103/50 , B32B38/0008 , B32B38/10 , B32B43/006 , B32B2457/14 , H01L21/02076 , H01L21/31127 , H01L24/27 , H01L2924/01006 , H01L2924/01033 , H01L2924/01057 , H01L2924/01074 , H01L2924/01079 , H01L2924/014 , H01L2924/05442 , H01L2924/07025 , H01L2924/12042 , H01L2924/3025 , H01L2924/40501 , Y10S156/93 , Y10S156/941 , Y10T156/11 , Y10T156/1158 , Y10T156/1917 , H01L2924/00
摘要： A method for laser ashing of polyimide for a semiconductor manufacturing process using a structure, the structure comprising a supporting material attached to a semiconductor chip by a polyimide glue, includes releasing the supporting material from the polyimide glue, such that the polyimide glue remains on the semiconductor chip; and ashing the polyimide glue on the semiconductor chip using an ablating laser.
摘要翻译： 一种使用结构的半导体制造方法的聚酰亚胺的激光灰化方法，包括通过聚酰亚胺胶粘在半导体芯片上的支撑材料的结构，包括从聚酰亚胺胶释放支撑材料，使得聚酰亚胺胶保持在 半导体芯片; 并使用烧蚀激光将半导体芯片上的聚酰亚胺胶粉化。
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公开(公告)号：US20100326702A1
公开(公告)日：2010-12-30
申请号：US12490804
申请日：2009-06-24
申请人： Bing Dang , David Hirsch Danovitch , Mario John Interrante , John Ulrich Knickerbocker , Michael Jay Shapiro , Van Thanh Truong
发明人： Bing Dang , David Hirsch Danovitch , Mario John Interrante , John Ulrich Knickerbocker , Michael Jay Shapiro , Van Thanh Truong
CPC分类号： H01L21/6836 , H01L21/6835 , H01L24/02 , H01L24/11 , H01L24/16 , H01L24/81 , H01L24/94 , H01L24/95 , H01L24/97 , H01L25/0657 , H01L25/50 , H01L2221/68327 , H01L2221/68354 , H01L2221/68372 , H01L2224/0401 , H01L2224/11002 , H01L2224/13025 , H01L2224/16145 , H01L2224/16146 , H01L2224/16225 , H01L2224/16235 , H01L2224/17181 , H01L2224/32145 , H01L2224/32225 , H01L2224/73204 , H01L2224/80006 , H01L2224/81005 , H01L2224/81011 , H01L2224/81801 , H01L2224/83005 , H01L2224/94 , H01L2224/97 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2924/01006 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01082 , H01L2924/01322 , H01L2924/14 , H01L2924/1433 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , Y10T29/49117 , Y10T29/49124 , Y10T29/49147 , Y10T29/49149 , Y10T29/49155 , Y10T29/49204 , H01L2224/81 , H01L2924/00012 , H01L2224/11 , H01L2224/83
摘要： Methods and apparatus for forming an integrated circuit assembly are presented, for example, three dimensional integrated circuit assemblies. Lower height 3DIC assemblies due Use of, for example, thinned wafers, low-height solder bumps, and through silicon vias provide for low height three dimensional integrated circuit assemblies. For example, a method for forming an integrated circuit assembly comprises forming first solder bumps on a first die, and forming a first structure comprising the first die, the first solder bumps, a first flux, and a first substratum. The first die is placed upon the first substratum. The first solder bumps are between the first die and the first substratum. The first flux holds the first die substantially flat and onto the first substratum.
摘要翻译： 提出了用于形成集成电路组件的方法和装置，例如，三维集成电路组件。 较低的高度3DIC组件由于使用例如薄化晶片，低高度焊料凸块和通过硅通孔，可提供低高度三维集成电路组件。 例如，一种用于形成集成电路组件的方法包括在第一裸片上形成第一焊料凸块，以及形成包括第一裸片，第一焊料凸块，第一焊剂和第一衬底的第一结构。 第一个模具被放置在第一个基础上。 第一焊锡凸块位于第一裸片和第一衬底之间。 第一通量使第一模具基本平坦并保持在第一基底上。
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公开(公告)号：US08689437B2
公开(公告)日：2014-04-08
申请号：US12490804
申请日：2009-06-24
申请人： Bing Dang , David Hirsch Danovitch , Mario John Interrante , John Ulrich Knickerbocker , Michael Jay Shapiro , Van Thanh Truong
发明人： Bing Dang , David Hirsch Danovitch , Mario John Interrante , John Ulrich Knickerbocker , Michael Jay Shapiro , Van Thanh Truong
CPC分类号： H01L21/6836 , H01L21/6835 , H01L24/02 , H01L24/11 , H01L24/16 , H01L24/81 , H01L24/94 , H01L24/95 , H01L24/97 , H01L25/0657 , H01L25/50 , H01L2221/68327 , H01L2221/68354 , H01L2221/68372 , H01L2224/0401 , H01L2224/11002 , H01L2224/13025 , H01L2224/16145 , H01L2224/16146 , H01L2224/16225 , H01L2224/16235 , H01L2224/17181 , H01L2224/32145 , H01L2224/32225 , H01L2224/73204 , H01L2224/80006 , H01L2224/81005 , H01L2224/81011 , H01L2224/81801 , H01L2224/83005 , H01L2224/94 , H01L2224/97 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2924/01006 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01082 , H01L2924/01322 , H01L2924/14 , H01L2924/1433 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , Y10T29/49117 , Y10T29/49124 , Y10T29/49147 , Y10T29/49149 , Y10T29/49155 , Y10T29/49204 , H01L2224/81 , H01L2924/00012 , H01L2224/11 , H01L2224/83
摘要： A method for forming an integrated circuit assembly comprises forming first solder bumps on a first die, and forming a first structure comprising the first die, the first solder bumps, a first flux, and a first substratum. The first die is placed upon the first substratum. The first solder bumps are between the first die and the first substratum. The first flux holds the first die substantially flat and onto the first substratum.
摘要翻译： 一种用于形成集成电路组件的方法包括：在第一裸片上形成第一焊料凸块，以及形成包括第一裸片，第一焊料凸点，第一焊剂和第一衬底的第一结构。 第一个模具被放置在第一个基础上。 第一焊锡凸块位于第一裸片和第一衬底之间。 第一通量使第一模具基本平坦并保持在第一基底上。
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