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1.发明授权UV radiation process for making electronic devices having low-leakage-current and low-polarization fatigue 失效用于制造具有低漏电流和低极化疲劳的电子器件的UV辐射过程
公开(公告)号：US6133050A
公开(公告)日：2000-10-17
申请号：US405885
申请日：1995-03-17
IPC分类号： C30B29/30 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C18/12 , C23C18/14 , C30B7/00 , C30B29/68 , H01L21/02 , H01L21/314 , H01L21/316 , H01L21/3205 , H01L27/108 , H01L27/115 , H01L21/31
CPC分类号： H01L21/31691 , C23C16/4412 , C23C16/448 , C23C16/4486 , C23C16/45561 , C23C16/4558 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1216 , C23C18/1225 , C23C18/1279 , C23C18/1283 , C23C18/1295 , C23C18/14 , C30B29/68 , C30B7/00 , H01L27/10805 , H01L27/11502 , H01L28/56 , H01L28/60 , H01L28/55
摘要： A precursor solution formed of a liquid polyoxyalkylated metal complex in as solvent is applied to a substrate in the formation of a metal oxide thin film. The liquid thin film is baked in air to a temperature up to 500.degree. C. while UV radiation having a wavelength ranging from 180 nm to 300 nm is applied. The thin film can be twice-baked at increasing temperatures while UV radiation is applied at one or both bakings. The film is then annealed at temperature ranging from about 700.degree. C. to 850.degree. C. to produce a thin-film solid metal oxide product. Alternatively, the UV radiation may be applied to the liquid precursor, the thin film may be annealed with UV radiation, or combinations of such applications of UV radiation to the precursor, to the thin film before or after baking, and/or UV annealing may be used. The use of UV radiation significantly reduces the leakage current and carbon impurity content of the final metal oxide.
摘要翻译： 将作为溶剂的液态聚氧化烷基化金属络合物形成的前体溶液施加到基板上，形成金属氧化物薄膜。 将液体薄膜在空气中烘烤至高达500℃的温度，同时施加波长为180nm至300nm的UV辐射。 该薄膜可以在增加的温度下进行两次烘烤，同时在一个或两个烘烤处施加UV辐射。 然后将膜在约700℃至850℃的温度范围内退火，以产生薄膜固体金属氧化物产物。 或者，可以将UV辐射施加到液体前体，该薄膜可以在紫外辐射或UV辐射的这种应用的组合与前体之间或在烘烤之前或之后对薄膜进行退火，和/或UV退火 使用。 使用紫外线辐射显着降低了最终金属氧化物的漏电流和碳杂质含量。
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2.发明授权
公开(公告)号：US5468679A
公开(公告)日：1995-11-21
申请号：US154760
申请日：1993-11-18
IPC分类号： B05D1/00 , B05D3/04 , B05D7/24 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C18/12 , C23C26/02 , C30B7/00 , H01C7/10 , H01L21/02 , H01L21/314 , H01L21/316 , H01L27/108 , H01L27/115 , H01L41/24 , H05K3/10 , H01L21/20 , H01L21/324
CPC分类号： B05D1/00 , B05D1/60 , B05D3/0493 , C23C16/4412 , C23C16/4486 , C23C16/45561 , C23C16/4558 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1216 , C23C18/1225 , C23C18/1279 , C23C18/1283 , C23C18/1295 , C23C26/02 , C30B29/68 , C30B7/00 , C30B7/005 , H01C7/1013 , H01L21/314 , H01L21/31691 , H01L27/10805 , H01L27/11502 , H01L27/11507 , H01L28/56 , H01L28/60 , H01L41/318 , H01L28/55 , H05K3/105
摘要： A precursor comprising a medium-length ligand carboxylate, such as a metal 2-ethylhexanoate, in a xylenes solvent is applied to an integrated circuit wafer. The wafer is baked to dry the precursor, annealed to form a layered superlattice material on the wafer, then the integrated circuit is completed.
摘要翻译： 将包含中长度配体羧酸盐的前体（例如2-乙基己酸金属）在二甲苯溶剂中的前体施加到集成电路晶片。 将晶片烘烤以干燥前体，退火以在晶片上形成层状超晶格材料，然后完成集成电路。
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3.发明授权Method of making layered superlattice materials for ferroelectric, high dielectric constant, integrated circuit applications 失效制备用于铁电，高介电常数，集成电路应用的分层超晶格材料的方法
公开(公告)号：US6080592A
公开(公告)日：2000-06-27
申请号：US477331
申请日：1995-06-07
IPC分类号： B05D1/00 , B05D3/04 , B05D7/24 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C18/12 , C23C26/02 , C30B7/00 , H01C7/10 , H01L21/02 , H01L21/314 , H01L21/316 , H01L27/108 , H01L27/115 , H01L41/24 , H05K3/10 , H01L21/00 , H01L21/8242
CPC分类号： C23C16/4558 , B05D1/00 , B05D1/60 , B05D3/0493 , C23C16/4412 , C23C16/4486 , C23C16/45561 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1216 , C23C18/1225 , C23C26/02 , C30B29/68 , C30B7/00 , H01C7/1013 , H01L21/314 , H01L21/31691 , H01L27/10805 , H01L27/11502 , H01L28/56 , H01L28/60 , H01L41/317 , H01L28/55 , H05K3/105
摘要： An integrated curcuit includes a layered superlattice material having the .sub.formula A1w1.sup.+a1 A2.sub.w2.sup.+a2 . . . Aj.sub.wj.sup.+aj S1.sub.x1.sup.+s1 S2.sub.x2.sup.+s2 . . . Sk.sub.xk.sup.+sk B1.sub.y1.sup.+b1 B2.sub.y2.sup.+b2 . . . Bl.sub.yl.sup.+bl Q.sub.z.sup.-2, where A1, A2 . . . Aj represent A-site elements in a perovskite-like structure, S1, S2 . . . Sk represent superlattice generator elements, B1, B2 . . . Bl represent B-site elements in a perovskite-like structure, Q represents an anion, the superscripts indicate the valences of the respective elements, the subscripts indicate the number of atoms of the element in the unit cell, and at least w1 and y1 are non-zero. Some of these materials are extremely low fatigue ferroelectrics and are applied in non-volatile memories. Others are high dielectric constant materials that do not degrade or breakdown over long periods of use and are applied in volatile memories.
摘要翻译： 集成电路包括具有式A1w1 + a1A2w2 + a2的分层超晶格材料。 。 。 Ajwj + ajS1x1 + s1S2x2 + s2。 。 。 Skxk + skB1y1 + b1B2y2 + b2。 。 。 Blyl + blQz-2，其中A1，A2。 。 。 Aj表示钙钛矿结构中的A位元素，S1，S2。 。 。 Sk代表超晶格发生器元件B1，B2。 。 。 B1表示钙钛矿结构中的B位元素，Q表示阴离子，上标表示各元素的化合价，下标表示单位元素中元素的原子数，并且至少w1和y1为 非零。 这些材料中的一些是非常低的疲劳铁电体，并且被应用在非易失性存储器中。 其他的是高介电常数材料，它们在长期使用中不会降解或击穿，并且被应用在易失性存储器中。
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公开(公告)号：US6056994A
公开(公告)日：2000-05-02
申请号：US477111
申请日：1995-06-07
IPC分类号： B05D1/00 , B05D3/04 , B05D7/24 , C23C4/12 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C18/12 , C23C18/14 , C23C26/02 , C30B7/00 , H01C7/10 , H01L21/02 , H01L21/314 , H01L21/316 , H01L27/108 , H01L27/115 , H01L41/24 , H05K3/10 , B05D5/12
CPC分类号： C23C16/4558 , B05D1/00 , B05D1/60 , B05D3/0493 , C23C16/4412 , C23C16/448 , C23C16/4486 , C23C16/45561 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1216 , C23C18/1225 , C23C18/14 , C23C26/02 , C23C4/123 , C30B29/68 , C30B7/00 , H01C7/1013 , H01L21/31691 , H01L27/10805 , H01L27/11502 , H01L28/56 , H01L28/60 , H01L41/1878 , H01L41/318 , H01L28/55 , H05K3/105
摘要： A precursor liquid comprising several metal 2-ethylhexanoates, such as strontium, tantalum, and bismuth 2-ethylhexanoates, in a xylenes/methyl ethyl ketone solvent is prepared, and deposited on a substrate. In one embodiement the substrate is placed within a vacuum deposition chamber, the precursor liquid is misted, and the mist is flowed into the deposition chamber while maintaining the chamber at ambient temperature to deposit the precursor liquid on the substrate. In another embodiment, the precursor is spin-coated on the substrate. The liquid is dried, baked, and annealed to form a thin film of a layered superlattice material, such as strontium bismuth tantalate, on the substrate.
摘要翻译： 制备在二甲苯/甲基乙基酮溶剂中包含若干金属2-乙基己酸酯如锶，钽和2-乙基己酸铋的前体液体，并沉积在基材上。 在一个实施方案中，将衬底放置在真空沉积室内，使前体液体发生雾化，并将雾流入沉积室，同时将室保持在环境温度下，以将前体液体沉积在衬底上。 在另一个实施方案中，将前体旋涂在基材上。 将液体干燥，烘烤和退火，以在基底上形成层状超晶格材料（例如钽酸锶锶）的薄膜。
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5.发明授权
公开(公告)号：US6022669A
公开(公告)日：2000-02-08
申请号：US687721
申请日：1996-07-26
申请人： Hiroto Uchida , Nobuyuki Soyama , Kensuke Kageyama , Katsumi Ogi , Michael C. Scott , Joseph D. Cuchiaro , Gary F. Derbenuick , Larry D. McMillan , Carlos A. Paz de Araujo
发明人： Hiroto Uchida , Nobuyuki Soyama , Kensuke Kageyama , Katsumi Ogi , Michael C. Scott , Joseph D. Cuchiaro , Gary F. Derbenuick , Larry D. McMillan , Carlos A. Paz de Araujo
IPC分类号： H01L21/02 , H01L21/314 , H01L21/316 , G03F7/00 , G03C1/73
CPC分类号： H01L21/31691 , H01L28/55
摘要： A first photosensitive liquid solution is applied to a substrate, patterned through exposure to radiation and development, and annealed to form a desired solid material, such as SrBi.sub.2 Ta.sub.2 O.sub.9, that is incorporated into a component of an integrated circuit Fabrication processes are designed protect the self-patterned solid material from conventional IC processing and to protect the conventional materials, such as silicon, from elements in the self-patterned solid material. In one embodiment, a layer of bismuth oxide is formed on the SrBi.sub.2 Ta.sub.2 O.sub.9 and a silicon oxide hole is etched to the bismuth oxide. The bismuth oxide protects the SrBi.sub.2 Ta.sub.2 O.sub.9 from the etchant, and is reduced by the etchant to bismuth. Any remaining bismuth oxide and much of the bismuth are vaporized in the anneal, and the remaining bismuth is incorporated into the SrBi.sub.2 Ta.sub.2 O.sub.9.
摘要翻译： 将第一感光性液体溶液施加到基板上，通过暴露于辐射和显影进行图案化，并退火以形成期望的固体材料，例如并入集成电路的部件中的SrBi2Ta2O9。制造工艺被设计成保护自 来自常规IC处理的图案化固体材料并且保护常规材料（例如硅）从自身图案化固体材料中的元件。 在一个实施例中，在SrBi 2 Ta 2 O 9上形成氧化铋层，氧化铋蚀刻氧化铋。 氧化铋保护SrBi2Ta2O9免受腐蚀，并被蚀刻剂还原成铋。 任何剩余的氧化铋和大部分铋在退火过程中蒸发，剩余的铋掺入到SrBi2Ta2O9中。
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公开(公告)号：US5688565A
公开(公告)日：1997-11-18
申请号：US480477
申请日：1995-06-07
IPC分类号： C23C4/12 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C18/12 , C23C18/14 , C30B7/00 , H01C7/10 , H01L21/02 , H01L21/314 , H01L21/316 , H01L27/108 , H01L27/115 , H05K3/10 , B05D3/00
CPC分类号： C23C16/4558 , C23C16/4412 , C23C16/4486 , C23C16/45561 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1216 , C23C18/1287 , C23C18/14 , C23C4/123 , C30B29/68 , C30B7/00 , C30B7/005 , H01C7/1013 , H01L21/31691 , H01L27/10805 , H01L27/11502 , H01L28/56 , H01L28/60 , H01L28/55 , H05K3/105
摘要： A precursor liquid comprising several metal 2-ethylhexanoates, such as stroritium tantalum and bismuth 2-ethylhexanoates, in a xylenes/methyl ethyl ketone solvent is prepared, a substrate is placed within a vacuum deposition chamber, the precursor liquid is misted, and the mist is flowed into the deposition chamber while maintaining the chamber at ambient temperature to deposit a layer of the precursor liquid on the substrate. The liquid is dried, baked, and annealed to form a thin film of a layered superlattice material, such as strontium bismuth tantalate, on the substrate. Then an integrated circuit is completed to include at least a potion of the layered superlattice material film in a component of the integrated circuit.
摘要翻译： 制备在二甲苯/甲基乙基酮溶剂中包含多个金属2-乙基己酸酯如锶钽和2-乙基己酸铋的前体液体，将基底置于真空沉积室内，使前体液体雾化，并将雾 流入沉积室，同时将室保持在环境温度，以将一层前体液体沉积在基底上。 将液体干燥，烘烤和退火，以在基底上形成层状超晶格材料（例如钽酸锶锶）的薄膜。 然后完成集成电路，以在集成电路的部件中至少包含一层分层超晶格材料膜。
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7.发明授权Shelf-stable liquid metal arylketone alcoholate solutions and use thereof in photoinitiated patterning of thin films 失效稳定的液态金属芳基酮醇化物溶液及其在薄膜光致化图案化中的应用
公开(公告)号：US5942376A
公开(公告)日：1999-08-24
申请号：US911098
申请日：1997-08-14
申请人： Hiroto Uchida , Nobuyuki Soyama , Kensuke Kageyama , Katsumi Ogi , Michael C. Scott , Larry D. McMillan , Carlos A. Paz de Araujo
发明人： Hiroto Uchida , Nobuyuki Soyama , Kensuke Kageyama , Katsumi Ogi , Michael C. Scott , Larry D. McMillan , Carlos A. Paz de Araujo
IPC分类号： C09D5/00 , G03F7/004 , G03F7/038 , H01L21/027 , B05D3/06
CPC分类号： G03F7/0042 , Y10S505/734
摘要： Solution films of a photosensitive metal arylketone alcoholate are micro-patterned by exposure to ultraviolet radiation under a mask. The resultant patterns are developed in an apolar solvent and annealed to provide thin film metal oxides for use in integrated circuits.
摘要翻译： 光敏金属芳基酮醇化物的溶液膜通过在掩模下暴露于紫外线辐射而被微图案化。 所得图案在非极性溶剂中显影并退火以提供用于集成电路的薄膜金属氧化物。
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8.发明授权
公开(公告)号：US5825057A
公开(公告)日：1998-10-20
申请号：US349692
申请日：1994-12-05
申请人： Hitoshi Watanabe , Carlos A. Paz De Araujo , Hiroyuki Yoshimori , Michael C. Scott , Takashi Mihara , Joseph D. Cuchiaro , Larry D. McMillan
发明人： Hitoshi Watanabe , Carlos A. Paz De Araujo , Hiroyuki Yoshimori , Michael C. Scott , Takashi Mihara , Joseph D. Cuchiaro , Larry D. McMillan
IPC分类号： B05D1/00 , B05D3/04 , B05D7/24 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C18/12 , C23C26/02 , C30B7/00 , H01C7/10 , H01L21/02 , H01L21/314 , H01L21/316 , H01L27/108 , H01L27/115 , H01L41/24 , H05K3/10 , H01L29/76
CPC分类号： B05D1/00 , B05D1/60 , B05D3/0493 , C23C16/4412 , C23C16/4486 , C23C16/45561 , C23C16/4558 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1216 , C23C18/1225 , C23C18/1279 , C23C18/1283 , C23C18/1295 , C23C26/02 , C30B29/68 , C30B7/00 , C30B7/005 , H01C7/1013 , H01L21/314 , H01L21/31691 , H01L27/10805 , H01L27/11502 , H01L27/11507 , H01L28/56 , H01L28/60 , H01L41/317 , H01L28/55 , H05K3/105
摘要： A liquid precursor containing a metal is applied to a substrate, RTP baked, and annealed to form a layered superlattice material. Prebaking the substrate and oxygen in the RTP and anneal is essential, except for high bismuth content precursors. Excess bismuth between 110% and 140% of stoichiometry and RTP temperature of 725.degree. C. is optimum. The film is formed in two layers, the first of which uses a stoichiometric precursor and the second of which uses an excess bismuth precursor. The electronic properties are so regularly dependent on process parameters and material composition, and such a wide variety of materials are possible, that electronic devices can be designed by selecting from a continuous record of the values of one or more electronic properties as a continuous function of the process parameters and material composition, and utilizing the selected process and material composition to make a device.
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9.发明授权Ferroelectric dielectric memory cell can switch at least giga cycles and has low fatigue - has high dielectric constant and low leakage current 失效铁电介质存储单元可以至少切换千兆周期，并具有低疲劳 - 具有高介电常数和低漏电流
公开(公告)号：US5519234A
公开(公告)日：1996-05-21
申请号：US154927
申请日：1993-11-18
IPC分类号： B05D1/00 , B05D3/04 , B05D7/24 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C18/12 , C23C26/02 , C30B7/00 , H01C7/10 , H01L21/02 , H01L21/314 , H01L21/316 , H01L27/108 , H01L27/115 , H01L41/24 , H05K3/10 , H01L29/12 , H01L29/94 , H01L31/113
CPC分类号： C23C16/4558 , B05D1/00 , B05D1/60 , B05D3/0493 , C23C16/4412 , C23C16/4486 , C23C16/45561 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1216 , C23C18/1225 , C23C26/02 , C30B29/68 , C30B7/00 , H01C7/1013 , H01L21/314 , H01L21/31691 , H01L27/10805 , H01L27/11502 , H01L28/56 , H01L28/60 , H01L41/317 , H01L28/55 , H05K3/105
摘要： An integrated circuit includes a layered superlattice material having the formula A1.sub.w1.sup.+a1 A2.sub.w2.sup.+a2 . . . Aj.sub.wj.sup.+aj S1.sub.x1.sup.+s1 S2.sub.x2.sup.+s2 . . . Sk.sub.xk.sup.+ak B1.sub.y1.sup.+b1 B2.sub.y2.sup.+b2 . . . Bl.sub.yl.sup.+bl Q.sub.z.sup.-2, where A1, A2 . . . Aj represent A-site elements in a perovskite-like structure, S1, S2 . . . Sk represent superlattice generator elements, B1, B2 . . . Bl represent B-site elements in a perovskite-like structure, Q represents an anion, the superscripts indicate the valences of the respective elements, the subscripts indicate the number of atoms of the element in the unit cell, and at least w1 and y1 are non-zero. Some of these materials are extremely low fatigue ferroelectrics and are applied in non-volatile memories. Others are high dielectric constant materials that do not degrade or breakdown over long periods of use and are applied in volatile memories.
摘要翻译： 集成电路包括具有公式A1w1 + a1A2w2 + a2的分层超晶格材料。 。 。 Ajwj + ajS1x1 + s1S2x2 + s2。 。 。 Skxk + ak B1y1 + b1B2y2 + b2。 。 。 Blyl + blQz-2，其中A1，A2。 。 。 Aj表示钙钛矿结构中的A位元素，S1，S2。 。 。 Sk代表超晶格发生器元件B1，B2。 。 。 B1表示钙钛矿结构中的B位元素，Q表示阴离子，上标表示各元素的化合价，下标表示单位元素中元素的原子数，并且至少w1和y1为 非零。 这些材料中的一些是非常低的疲劳铁电体，并且被应用在非易失性存储器中。 其他的是高介电常数材料，它们在长期使用中不会降解或击穿，并且被应用在易失性存储器中。
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10.发明授权Process for fabricating layered superlattice materials and making electronic devices including same 失效用于制造分层超晶格材料并制造包括其的电子器件的方法
公开(公告)号：US06072207A
公开(公告)日：2000-06-06
申请号：US405953
申请日：1995-03-17
申请人： Hiroyuki Yoshimori , Carlos A. Paz De Araujo , Takeshi Ito , Michael C. Scott , Larry D. McMillan
发明人： Hiroyuki Yoshimori , Carlos A. Paz De Araujo , Takeshi Ito , Michael C. Scott , Larry D. McMillan
IPC分类号： H01L21/8247 , B05D1/00 , B05D3/04 , B05D7/24 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C18/12 , C23C26/02 , C30B7/00 , H01C7/10 , H01L21/02 , H01L21/314 , H01L21/316 , H01L21/8242 , H01L27/108 , H01L27/115 , H01L29/788 , H01L29/792 , H01L41/24 , H05K3/10 , H01L29/12
CPC分类号： C23C18/1216 , B05D1/00 , B05D1/60 , B05D3/0493 , C23C16/4412 , C23C16/4486 , C23C16/45561 , C23C16/4558 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1279 , C23C18/1283 , C23C18/1295 , C23C26/02 , C30B29/68 , C30B7/00 , C30B7/005 , H01C7/1013 , H01L21/314 , H01L21/31691 , H01L27/10805 , H01L27/11502 , H01L28/56 , H01L28/60 , H01L41/318 , H01L28/55 , H01L41/257 , H05K3/105
摘要： A liquid precursor containing a metal is applied to a substrate, RTP baked, and annealed to form a layered superlattice material. Special polyoxyalkylated precursor solutions are designed to optimize polarizability of the corresponding metal oxide materials by adding dopants including stoichiometric excess amounts of bismuth and tantalum. The RTP baking process is especially beneficial in optimizing the polarizability of the resultant metal oxide.
摘要翻译： 将含有金属的液体前体施加到基材上，进行RTP烘焙并退火以形成层状超晶格材料。 设计特殊的聚氧化烷基化前体溶液通过添加包括化学计量过量的铋和钽的掺杂剂来优化相应的金属氧化物材料的极化率。 RTP烘焙过程对于优化所得金属氧化物的极化率是特别有利的。
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