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    Bonding an optical element to a light emitting device
    4.
    发明申请
    Bonding an optical element to a light emitting device 有权
    将光学元件结合到发光器件

    公开(公告)号：US20060105478A1

    公开(公告)日：2006-05-18

    申请号：US10987241

    申请日：2004-11-12

    申请人： Michael Camras ,  William Imler ,  Franklin Wall ,  Frank Steranka ,  Michael Krames ,  Helena Ticha ,  Ladislav Tichy

    发明人： Michael Camras ,  William Imler ,  Franklin Wall ,  Frank Steranka ,  Michael Krames ,  Helena Ticha ,  Ladislav Tichy

    IPC分类号： H01L21/00

    CPC分类号： H05B33/0857 ,  H01L25/0753 ,  H01L33/58 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A device is provided with at least one light emitting device (LED) die mounted on a submount with an optical element subsequently thermally bonded to the LED die. The LED die is electrically coupled to the submount through contact bumps that have a higher temperature melting point than is used to thermally bond the optical element to the LED die. In one implementation, a single optical element is bonded to a plurality of LED dice that are mounted to the submount and the submount and the optical element have approximately the same coefficients of thermal expansion. Alternatively, a number of optical elements may be used. The optical element or LED die may be covered with a coating of wavelength converting material. In one implementation, the device is tested to determine the wavelengths produced and additional layers of the wavelength converting material are added until the desired wavelengths are produced.

    摘要翻译： 设备具有至少一个发光器件（LED）裸片，该发光器件（LED）裸片安装在具有随后热粘合到LED管芯上的光学元件的基座上。 LED管芯通过接触凸块电连接到副安装座，接触凸块具有比用于将光学元件热粘合到LED管芯的温度高的熔点。 在一个实现中，单个光学元件被结合到安装到基座上的多个LED芯片，并且基座和光学元件具有大致相同的热膨胀系数。 或者，可以使用多个光学元件。 光学元件或LED管芯可以用波长转换材料的涂层覆盖。 在一个实施方案中，测试该器件以确定产生的波长，并且添加波长转换材料的附加层，直到产生所需的波长。

    Color control by alteration of wavelength converting element
    7.
    发明申请
    Color control by alteration of wavelength converting element 有权
    通过改变波长转换元件的颜色控制

    公开(公告)号：US20060258028A1

    公开(公告)日：2006-11-16

    申请号：US11444592

    申请日：2006-05-31

    申请人： Steven Paolini ,  Michael Camras ,  Oscar Chao Pujol ,  Frank Steranka ,  John Epler

    发明人： Steven Paolini ,  Michael Camras ,  Oscar Chao Pujol ,  Frank Steranka ,  John Epler

    IPC分类号： H01L21/00

    CPC分类号： H01L33/508 ,  H01L33/22 ,  H01L33/58 ,  H01L2224/73253 ,  H01L2933/0041

    摘要： A light emitting device is produced by depositing a layer of wavelength converting material over the light emitting device, testing the device to determine the wavelength spectrum produced and correcting the wavelength converting member to produce the desired wavelength spectrum. The wavelength converting member may be corrected by reducing or increasing the amount of wavelength converting material. In one embodiment, the amount of wavelength converting material in the wavelength converting member is reduced, e.g., through laser ablation or etching, to produce the desired wavelength spectrum.

    摘要翻译： 通过在发光器件上沉积波长转换材料层来制造发光器件，测试该器件以确定产生的波长光谱并校正波长转换部件以产生所需的波长光谱。 可以通过减少或增加波长转换材料的量来校正波长转换构件。 在一个实施例中，波长转换构件中的波长转换材料的量例如通过激光烧蚀或蚀刻而减小，以产生所需的波长谱。

    System and method for providing color light sources in proximity to predetermined wavelength conversion structures
    8.
    发明授权
    System and method for providing color light sources in proximity to predetermined wavelength conversion structures 有权
    用于在预定波长转换结构附近提供彩色光源的系统和方法

    公开(公告)号：US08740413B1

    公开(公告)日：2014-06-03

    申请号：US13328978

    申请日：2011-12-16

    申请人： Michael Krames ,  Troy Trottier ,  Frank Steranka ,  William Houck ,  Arpan Chakraborty

    发明人： Michael Krames ,  Troy Trottier ,  Frank Steranka ,  William Houck ,  Arpan Chakraborty

    IPC分类号： F21V9/00 ,  F21V9/16 ,  F21V21/00 ,  H01J63/04 ,  H01L33/00

    CPC分类号： H01L33/504 ,  F21K9/00 ,  F21K9/232 ,  F21V29/70 ,  F21Y2105/10 ,  F21Y2105/12 ,  F21Y2113/13 ,  F21Y2115/10 ,  H01L25/0753 ,  H01L27/156 ,  H01L33/60 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An optical device includes a light source with at least two radiation sources, and at least two layers of wavelength-modifying materials excited by the radiation sources that emit radiation in at least two predetermined wavelengths. Embodiments include a first plurality of n radiation sources configured to emit radiation at a first wavelength. The first plurality of radiation sources are in proximity to a second plurality of m of radiation sources configured to emit radiation at a second wavelength, the second wavelength being shorter than the first wavelength. The ratio between m and n is predetermined. The disclosed optical device also comprises at least two wavelength converting layers such that a first wavelength converting layer is configured to absorb a portion of radiation emitted by the second radiation sources, and a second wavelength converting layer configured to absorb a portion of radiation emitted by the second radiation sources.

    摘要翻译： 光学装置包括具有至少两个辐射源的光源和由辐射源激发的至少两层波长改变材料，所述辐射源以至少两个预定波长发射辐射。 实施例包括被配置为发射第一波长的辐射的第一多个n个辐射源。 所述第一多个辐射源接近配置成发射第二波长的辐射的第二多个m个辐射源，所述第二波长比所述第一波长短。 m和n之间的比率是预定的。 所公开的光学装置还包括至少两个波长转换层，使得第一波长转换层被配置为吸收由第二辐射源发射的辐射的一部分，以及第二波长转换层，其被配置为吸收由第二波长转换层发射的辐射的一部分 第二辐射源。

    AlInGaP LED Having Reduced Temperature Dependence
    9.
    发明申请
    AlInGaP LED Having Reduced Temperature Dependence 有权
    具有降低温度依赖性的AlInGaP LED

    公开(公告)号：US20070131961A1

    公开(公告)日：2007-06-14

    申请号：US11672003

    申请日：2007-02-06

    申请人： Michael Krames ,  Nathan Gardner ,  Frank Steranka

    发明人： Michael Krames ,  Nathan Gardner ,  Frank Steranka

    IPC分类号： H01L33/00 ,  H01L21/00

    CPC分类号： H01L33/30 ,  H01L2224/13 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2224/0401

    摘要： To increase the lattice constant of AlInGaP LED layers to greater than the lattice constant of GaAs for reduced temperature sensitivity, an engineered growth layer is formed over a substrate, where the growth layer has a lattice constant equal to or approximately equal to that of the desired AlInGaP layers. In one embodiment, a graded InGaAs or InGaP layer is grown over a GaAs substrate. The amount of indium is increased during growth of the layer such that the final lattice constant is equal to that of the desired AlInGaP active layer. In another embodiment, a very thin InGaP, InGaAs, or AlInGaP layer is grown on a GaAs substrate, where the InGaP, InGaAs, or AlInGaP layer is strained (compressed). The InGaP, InGaAs, or AlInGaP thin layer is then delaminated from the GaAs and relaxed, causing the lattice constant of the thin layer to increase to the lattice constant of the desired overlying AlInGaP LED layers. The LED layers are then grown over the thin InGaP, InGaAs, or AlInGaP layer.

    摘要翻译： 为了将AlInGaP LED层的晶格常数提高到大于GaAs的晶格常数以降低温度敏感性，在衬底上形成工程化生长层，其中生长层具有等于或近似等于所需的晶格常数的晶格常数 AlInGaP层。 在一个实施例中，在GaAs衬底上生长渐变的InGaAs或InGaP层。 在层的生长期间铟的量增加，使得最终晶格常数等于所需的AlInGaP活性层的量。 在另一实施例中，在GaAs衬底上生长非常薄的InGaP，InGaAs或AlInGaP层，其中InGaP，InGaAs或AlInGaP层被应变（压缩）。 然后，InGaP，InGaAs或AlInGaP薄层从GaAs分层并且弛豫，导致薄层的晶格常数增加到期望的上覆AlInGaP LED层的晶格常数。 然后在薄的InGaP，InGaAs或AlInGaP层上生长LED层。

    A1lnGaP LED having reduced temperature dependence
    10.
    发明申请
    A1lnGaP LED having reduced temperature dependence 有权
    AlInGaP LED具有降低的温度依赖性

    公开(公告)号：US20060220031A1

    公开(公告)日：2006-10-05

    申请号：US11100080

    申请日：2005-04-05

    申请人： Michael Krames ,  Nathan Gardner ,  Frank Steranka

    发明人： Michael Krames ,  Nathan Gardner ,  Frank Steranka

    IPC分类号： H01L33/00

    CPC分类号： H01L33/30 ,  H01L2224/13 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2224/0401

    摘要： To increase the lattice constant of AlInGaP LED layers to greater than the lattice constant of GaAs for reduced temperature sensitivity, an engineered growth layer is formed over a substrate, where the growth layer has a lattice constant equal to or approximately equal to that of the desired AlInGaP layers. In one embodiment, a graded InGaAs or InGaP layer is grown over a GaAs substrate. The amount of indium is increased during growth of the layer such that the final lattice constant is equal to that of the desired AlInGaP active layer. In another embodiment, a very thin InGaP, InGaAs, or AlInGaP layer is grown on a GaAs substrate, where the InGaP, InGaAs, or AlInGaP layer is strained (compressed). The InGaP, InGaAs, or AlInGaP thin layer is then delaminated from the GaAs and relaxed, causing the lattice constant of the thin layer to increase to the lattice constant of the desired overlying AlInGaP LED layers. The LED layers are then grown over the thin InGaP, InGaAs, or AlInGaP layer.

    摘要翻译： 为了将AlInGaP LED层的晶格常数提高到大于GaAs的晶格常数以降低温度敏感性，在衬底上形成工程化生长层，其中生长层具有等于或近似等于所需的晶格常数的晶格常数 AlInGaP层。 在一个实施例中，在GaAs衬底上生长渐变的InGaAs或InGaP层。 在层的生长期间铟的量增加，使得最终晶格常数等于所需的AlInGaP活性层的量。 在另一实施例中，在GaAs衬底上生长非常薄的InGaP，InGaAs或AlInGaP层，其中InGaP，InGaAs或AlInGaP层被应变（压缩）。 然后，InGaP，InGaAs或AlInGaP薄层从GaAs分层并且弛豫，导致薄层的晶格常数增加到期望的上覆AlInGaP LED层的晶格常数。 然后在薄的InGaP，InGaAs或AlInGaP层上生长LED层。