公开(公告)号：US09455600B2

公开(公告)日：2016-09-27

申请号：US13979197

申请日：2012-01-06

申请人： Mineo Yamamoto ,  Kazunori Sakanobe ,  Hiroyuki Ishii ,  Hiroki Aso ,  Atsushi Matsuoka ,  Noriaki Matsunaga

发明人： Mineo Yamamoto ,  Kazunori Sakanobe ,  Hiroyuki Ishii ,  Hiroki Aso ,  Atsushi Matsuoka ,  Noriaki Matsunaga

IPC分类号： H02K1/04 ,  H02K1/27 ,  H02K5/10 ,  H02K5/173 ,  H02K1/30 ,  H02K15/12

CPC分类号： H02K1/04 ,  H02K1/272 ,  H02K1/278 ,  H02K1/30 ,  H02K5/10 ,  H02K5/1732 ,  H02K11/215 ,  H02K15/12

摘要： A rotor resin assembly of a rotor of an electric motor includes a rotor magnet including a substantially cylindrical yoke molded from thermoplastic resin containing a soft magnetic material or ferrite and a resin magnet integrally formed in the outer circumference of the yoke, a position detection magnet arranged at one end in the axial direction of the rotor magnet, and a substantially doughnut-like rotor core arranged in the inner circumference of the rotor magnet and formed by laminating a predetermined number of electromagnetic steel plates. The rotor magnet, the position detection magnet, and the rotor core are integrally formed by resin. A shaft is inserted into an inner diameter section of the rotor core, and the rotor resin assembly is caulked by a jig to form a recess in the vicinity of the inner diameter sections of both end faces of the rotor core and assembled to the shaft.

摘要翻译： 电动机的转子的转子树脂组件包括转子磁体，该转子磁体包括由包含软磁性材料或铁氧体的热塑性树脂成型的大致圆柱形磁轭和一体地形成在磁轭外周的树脂磁体，位置检测磁铁布置 在转子磁体的轴向的一端，以及设置在转子磁体的内周的基本上为环状的转子铁芯，通过层叠规定数量的电磁钢板而形成。 转子磁体，位置检测磁体和转子芯由树脂一体形成。 将轴插入转子铁芯的内径部分中，通过夹具铆接转子树脂组件，以在转子芯的两个端面的内径部分附近形成凹部，并组装到轴上。

公开(公告)号：US20130285482A1

公开(公告)日：2013-10-31

申请号：US13979197

申请日：2012-01-06

申请人： Mineo Yamamoto ,  Kazunori Sakanobe ,  Hiroyuki Ishii ,  Hiroki Aso ,  Atsushi Matsuoka ,  Noriaki Matsunaga

发明人： Mineo Yamamoto ,  Kazunori Sakanobe ,  Hiroyuki Ishii ,  Hiroki Aso ,  Atsushi Matsuoka ,  Noriaki Matsunaga

IPC分类号： H02K1/04 ,  H02K1/27

CPC分类号： H02K1/04 ,  H02K1/272 ,  H02K1/278 ,  H02K1/30 ,  H02K5/10 ,  H02K5/1732 ,  H02K11/215 ,  H02K15/12

摘要： A rotor resin assembly of a rotor of an electric motor includes a rotor magnet including a substantially cylindrical yoke molded from thermoplastic resin containing a soft magnetic material or ferrite and a resin magnet integrally formed in the outer circumference of the yoke, a position detection magnet arranged at one end in the axial direction of the rotor magnet, and a substantially doughnut-like rotor core arranged in the inner circumference of the rotor magnet and formed by laminating a predetermined number of electromagnetic steel plates. The rotor magnet, the position detection magnet, and the rotor core are integrally formed by resin. A shaft is inserted into an inner diameter section of the rotor core, and the rotor resin assembly is caulked by a jig to form a recess in the vicinity of the inner diameter sections of both end faces of the rotor core and assembled to the shaft.

摘要翻译： 电动机的转子的转子树脂组件包括转子磁体，该转子磁体包括由包含软磁性材料或铁氧体的热塑性树脂成型的大致圆柱形磁轭和一体地形成在磁轭外周的树脂磁体，位置检测磁铁布置 在转子磁体的轴向的一端，以及设置在转子磁体的内周的基本上为环状的转子铁芯，通过层叠规定数量的电磁钢板而形成。 转子磁体，位置检测磁体和转子芯由树脂一体形成。 将轴插入转子铁芯的内径部分中，通过夹具铆接转子树脂组件，以在转子芯的两个端面的内径部分附近形成凹部，并组装到轴上。

公开(公告)号：US08753068B2

公开(公告)日：2014-06-17

申请号：US13096419

申请日：2011-04-28

申请人： Noriaki Matsunaga ,  Hiroki Aso

发明人： Noriaki Matsunaga ,  Hiroki Aso

IPC分类号： F04D29/041

CPC分类号： F04D13/0633 ,  F04D29/0473

摘要： A highly efficient and long-life pump is provided through improvement of pump efficiency by extending an effective length of a blade of an impeller and through reduction of friction loss of a thrust bearing. In a pump 110, a suction direction X and a discharge direction Y of a liquid are approximately perpendicular to each other. The pump 100 includes a shaft 27 positioned downstream of a suction inlet 22; an impeller 25 configured in a disk shape that rotates around the shaft 27, the impeller 25 having a plurality of blades 25c formed radially in a radial direction from a center area located at a center portion of the disk shape as seen in the suction direction X, the plurality of blades 25c being positioned at an approximately same longitudinal position as a longitudinal position of a discharge outlet 23; and a bearing (18-1) that receives the shaft 27, the bearing (18-1) being positioned at the center area of the impeller 25 and having a through hole (18-1c) as a guide portion for guiding the liquid drawn in from the suction inlet 22 to the discharge outlet 23.

摘要翻译： 通过延长叶轮的叶片的有效长度并减少推力轴承的摩擦损失，提高了泵效率的高效率和寿命长的泵。 在泵110中，液体的吸入方向X和排出方向Y大致垂直。 泵100包括位于吸入口22下游的轴27; 叶轮25，其构造成围绕轴27旋转的盘状，叶轮25具有多个叶片25c，该多个叶片25c从位于盘形状的中心部分的沿吸入方向X看的中心区域径向地形成 多个叶片25c位于与排出口23的纵向位置大致相同的纵向位置; 和承载轴27的轴承（18-1），轴承（18-1）位于叶轮25的中心区域，并具有通孔（18-1c）作为引导部分，用于引导液体 从吸入口22到排出口23。

公开(公告)号：US08601686B2

公开(公告)日：2013-12-10

申请号：US12899762

申请日：2010-10-07

申请人： Noriaki Matsunaga ,  Hiroki Asou ,  Mineo Yamamoto ,  Mamoru Kawakubo

发明人： Noriaki Matsunaga ,  Hiroki Asou ,  Mineo Yamamoto ,  Mamoru Kawakubo

IPC分类号： B23P6/00

CPC分类号： F04D13/0633 ,  F04D29/628

摘要： A manufacturing method of a water circulating pump including a shaft, a pump part having a first casing in which a first concavity is formed for receiving one end portion of the shaft to restrain rotation of the shaft. A stator part has a second casing in which a second concavity is formed for receiving another end portion of the shaft to restrain rotation of the shaft and a stator for rotating a rotor by electromagnetic interaction. The method includes inserting the another end portion of the shaft into a position corresponding to the second concavity of a mold for molding the second casing, and molding the second casing by injecting a thermoplastic resin into the mold for molding the second casing into which the another end portion of the shaft has been inserted.

摘要翻译： 一种包括轴的水循环泵的制造方法，具有第一壳体的泵部，所述第一壳体形成有第一凹部，用于容纳所述轴的一个端部以抑制所述轴的旋转。 定子部分具有第二壳体，其中形成有第二凹部，用于容纳轴的另一端部以限制轴的旋转，以及通过电磁相互作用使转子旋转的定子。 该方法包括将轴的另一个端部插入与用于模制第二壳体的模具的第二凹部相对应的位置，并且通过将热塑性树脂注射到用于模制第二壳体的模具中来模制第二壳体， 轴的端部已插入。

公开(公告)号：US08614510B2

公开(公告)日：2013-12-24

申请号：US12726604

申请日：2010-03-18

申请人： Hideyuki Tomizawa ,  Noriaki Matsunaga ,  Tadayoshi Watanabe ,  Shiro Mishima ,  Masako Kodera

发明人： Hideyuki Tomizawa ,  Noriaki Matsunaga ,  Tadayoshi Watanabe ,  Shiro Mishima ,  Masako Kodera

IPC分类号： H01L23/48 ,  H01L23/52

CPC分类号： H01L21/76826 ,  H01L21/3105 ,  H01L21/76832 ,  H01L21/76849 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for manufacturing a semiconductor device includes forming an insulating film including silicon, oxygen, carbon and hydrogen above a semiconductor substrate, forming a wiring trench in the insulating film, forming a metal film to be a metal wiring on the insulating film such that the metal film is provided in the wiring trench, forming the metal wiring by removing the metal film outside the wiring trench, performing a hydrophobic treatment to the surface of the insulating film after the forming the metal wiring, and forming a metal cap selectively on an upper surface of the metal wiring by plating after the performing the hydrophobic treatment.

摘要翻译： 一种制造半导体器件的方法包括在半导体衬底上形成包括硅，氧，碳和氢的绝缘膜，在绝缘膜中形成布线沟槽，在绝缘膜上形成金属膜作为金属布线，使得 金属膜设置在布线沟槽中，通过去除布线沟槽外的金属膜形成金属布线，在形成金属布线之后对绝缘膜的表面进行疏水处理，并在上部选择性地形成金属帽 在执行疏水处理之后通过电镀的金属布线的表面。

公开(公告)号：US20130093090A1

公开(公告)日：2013-04-18

申请号：US13707359

申请日：2012-12-06

申请人： Yumi HAYASHI ,  Atsuko Sakata ,  Kei Watanabe ,  Noriaki Matsunaga ,  Shinichi Nakao ,  Makoto Wada ,  Hiroshi Toyoda

发明人： Yumi HAYASHI ,  Atsuko Sakata ,  Kei Watanabe ,  Noriaki Matsunaga ,  Shinichi Nakao ,  Makoto Wada ,  Hiroshi Toyoda

IPC分类号： H01L23/485

CPC分类号： H01L23/485 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76856 ,  H01L21/76867 ,  H01L21/76877 ,  H01L21/76883 ,  H01L21/76886 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for fabricating a semiconductor device, includes forming a dielectric film above a substrate; forming an opening in the dielectric film; forming a first film containing a metal whose energy for forming silicide thereof is lower than that of Cu silicide inside the opening; forming a second film that is conductive and contains copper (Cu) in the opening in which the first film containing the metal is formed; and forming a compound film containing Cu and silicon (Si) selectively on the second film in an atmosphere in which a temperature of the substrate is below 300° C.

摘要翻译： 一种制造半导体器件的方法，包括在衬底上形成电介质膜; 在电介质膜中形成开口; 形成含有其形成硅化物的能量低于开口内的硅化铜的能量的金属的第一膜; 在形成有含有金属的第一膜的开口中形成导电性并且含有铜（Cu）的第二膜; 以及在所述基板的温度低于300℃的气氛中，在所述第二膜上选择性地形成含有Cu和硅（Si）的复合膜。

公开(公告)号：US20120190212A1

公开(公告)日：2012-07-26

申请号：US13440480

申请日：2012-04-05

申请人： Seiji SAMUKAWA ,  Shigeo Yasuhara ,  Shingo Kadomura ,  Tsutomu Shimayama ,  Hisashi Yano ,  Kunitoshi Tajima ,  Noriaki Matsunaga ,  Masaki Yoshimaru

发明人： Seiji SAMUKAWA ,  Shigeo Yasuhara ,  Shingo Kadomura ,  Tsutomu Shimayama ,  Hisashi Yano ,  Kunitoshi Tajima ,  Noriaki Matsunaga ,  Masaki Yoshimaru

IPC分类号： H01L21/312 ,  C09D183/04

CPC分类号： H01L21/02126 ,  C23C16/401 ,  C23C16/486 ,  H01L21/02216 ,  H01L21/02277

摘要： Disclosed is a low dielectric constant insulating film formed of a polymer containing Si atoms, O atoms, C atoms, and H atoms, which includes straight chain molecules in which a plurality of basic molecules with an SiO structure are linked in a straight chain, binder molecules with an SiO structure linking a plurality of the straight chain molecules. The area ratio of a signal indicating a linear type SiO structure is 49% or more, and the signal amount of the signal indicating Si(CH3) is 66% or more.

摘要翻译： 公开了由包含Si原子，O原子，C原子和H原子的聚合物形成的低介电常数绝缘膜，其包括其中多个具有SiO结构的碱性分子在直链中键合的直链分子，粘合剂 具有连接多个直链分子的SiO结构的分子。 指示线性型SiO结构的信号的面积比为49％以上，表示Si（CH3）的信号的信号量为66％以上。

公开(公告)号：US20110233779A1

公开(公告)日：2011-09-29

申请号：US13052367

申请日：2011-03-21

申请人： Makoto Wada ,  Yosuke Akimoto ,  Yuichi Yamazaki ,  Masayuki Katagiri ,  Noriaki Matsunaga ,  Tadashi Sakai ,  Naoshi Sakuma

发明人： Makoto Wada ,  Yosuke Akimoto ,  Yuichi Yamazaki ,  Masayuki Katagiri ,  Noriaki Matsunaga ,  Tadashi Sakai ,  Naoshi Sakuma

IPC分类号： H01L23/532 ,  H01L21/28 ,  B82Y99/00 ,  B82Y40/00

CPC分类号： H01L23/5226 ,  B82Y10/00 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76876 ,  H01L21/76879 ,  H01L23/53238 ,  H01L23/53276 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to one embodiment, a semiconductor device includes an interlayer insulation film provided on a substrate including a Cu wiring, a via hole formed in the interlayer insulation film on the Cu wiring, a first metal film selectively formed on the Cu wiring in the via hole, functioning as a barrier to the Cu wiring, and functioning as a promoter of carbon nanotube growth, a second metal film formed at least on the first metal film in the via hole, and functioning as a catalyst of the carbon nanotube growth, and carbon nanotubes buried in the via hole in which the first metal film and the second metal film are formed.

摘要翻译： 根据一个实施例，半导体器件包括设置在包括Cu布线的基板上的层间绝缘膜，形成在Cu布线上的层间绝缘膜中的通孔，选择性地形成在通孔中的Cu布线上的第一金属膜 作为Cu布线的屏障，起到碳纳米管生长的促进剂的功能，至少在通孔中的第一金属膜上形成的第二金属膜，并且用作碳纳米管生长的催化剂，碳 埋藏在其中形成有第一金属膜和第二金属膜的通孔中的纳米管。

公开(公告)号：US07977795B2

公开(公告)日：2011-07-12

申请号：US11619338

申请日：2007-01-03

申请人： Kazuyuki Higashi ,  Noriaki Matsunaga

发明人： Kazuyuki Higashi ,  Noriaki Matsunaga

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： G06F17/5068 ,  H01L23/564 ,  H01L23/585 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device according to an embodiment of the present invention has: a semiconductor substrate; an interlayer insulating film formed above the semiconductor substrate; a protective film formed on the interlayer insulating film, the protective film having a higher density than that of the interlayer insulating film; at least one of a wiring and a dummy wiring formed in the interlayer insulating film and the protective film; and a separation wall formed within the interlayer insulating film so as to surround a low density region to separate the low density region from other regions, a sum of covering densities of the wiring and the dummy wiring being lower than a predetermined prescribed value in the low density region.

摘要翻译： 根据本发明的实施例的半导体器件具有：半导体衬底; 形成在半导体衬底上的层间绝缘膜; 形成在所述层间绝缘膜上的保护膜，所述保护膜的密度高于所述层间绝缘膜的密度; 在层间绝缘膜和保护膜中形成的布线和虚拟布线中的至少一个; 以及形成在层间绝缘膜内的隔离壁，以便围绕低密度区域以将低密度区域与其他区域分离，布线和虚拟布线的覆盖密度之和低于低于预定的规定值 密度区域。

公开(公告)号：USRE41948E1

公开(公告)日：2010-11-23

申请号：US12198680

申请日：2008-08-26

申请人： Noriaki Matsunaga

发明人： Noriaki Matsunaga

IPC分类号： H01L23/48

CPC分类号： H01L23/53295 ,  H01L23/3192 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device is provided with a first insulating film, a first wiring layer formed in the first insulating film, a second insulating film formed above the first wiring layer and the first insulating film, the second insulating film including a low dielectric constant film, a second wiring layer formed in the second insulating film and coupled to the first wiring layer through a first connection section, and a third insulating film formed above the second wiring layer and the second insulating film and serving as one of an interlayer insulating film and a passivation film, and at least one of the first and third insulating films being one of a film formed mainly of SiON, a film formed mainly of SiN, and a laminated film being the films formed mainly of SiON or SiN respectively.

摘要翻译： 半导体器件设置有第一绝缘膜，形成在第一绝缘膜中的第一布线层，形成在第一布线层和第一绝缘膜之上的第二绝缘膜，第二绝缘膜包括低介电常数膜， 第二布线层，形成在第二绝缘膜中，并通过第一连接部分耦合到第一布线层;以及第三绝缘膜，形成在第二布线层和第二绝缘膜之上，并且用作层间绝缘膜和钝化层之一 膜，并且第一和第三绝缘膜中的至少一个是主要由SiON形成的膜之一，主要由SiN形成的膜，以及分别是主要由SiON或SiN形成的膜的层叠膜。