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公开(公告)号：US09005461B2
公开(公告)日：2015-04-14
申请号：US12219123
申请日：2008-07-16
申请人： Tomohiko Tatsumi , Seiji Samukawa
发明人： Tomohiko Tatsumi , Seiji Samukawa
CPC分类号： H01J37/32935 , C23C16/50 , C23C16/52 , H01L22/14
摘要： A plasma monitoring method using a sensor, the sensor having a substrate; a first electrode, the first electrode being a conductive electrode and formed on the substrate while being isolated from the substrate; an insulating film formed on the first electrode; a contact hole formed in the insulating film and having a depth from a surface of the insulating film to the first electrode; and a second electrode, the second electrode being a conductive electrode, formed on the surface of the insulating film, and faced to plasma during a plasma process, the plasma monitoring method including measuring and monitoring potentials of the first electrode and the second electrode or a potential difference between the first electrode and the second electrode during the plasma process is disclosed. A plasma monitoring system carrying out the plasma monitoring method is also disclosed.
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2.发明申请SURFACE NANOSTRUCTURE FORMING METHOD AND BASE HAVING SURFACE NANOSTRUCTURE 审中-公开表面纳米结构形成方法和具有表面纳米结构的基底公开(公告)号：US20120295066A1
公开(公告)日：2012-11-22
申请号：US13566679
申请日：2012-08-03
CPC分类号： C03C23/0025 , B23K26/0624 , B23K26/361 , Y10T428/24479
摘要： A surface nanostructure forming method includes: preparing a substrate having an appropriate processing value; a first process of irradiating a part which is close to a surface of the substrate with laser light having a pulse duration of picosecond order or shorter at an irradiation intensity being close to the appropriate processing value of the substrate, or greater than or equal to the appropriate processing value and less than or equal to an ablation threshold and forming periodic nanostructures in which first modified portions and second modified portions are periodically arranged in a self-assembled manner at a focus at which the laser light is concentrated and in a region being close to the focus; and a second process of performing an etching treatment on the surface of the substrate having the periodic nanostructures formed thereon to form an uneven structure having the first modified portions as valleys.
摘要翻译： 表面纳米结构形成方法包括：制备具有适当处理值的基材; 或者在接近基板的适当处理值的照射强度下用脉冲持续时间为皮秒级或更短的激光照射靠近基板的表面的部分的第一工序，或大于或等于 适当的处理值并小于或等于烧蚀阈值并形成周期性纳米结构，其中第一改性部分和第二修饰部分以激光聚焦的焦点周期性地以自组装的方式布置，并且在紧密的区域中 重点; 以及对其上形成有周期性纳米结构的基板的表面进行蚀刻处理以形成具有第一改性部分作为凹谷的凹凸结构的第二工艺。
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公开(公告)号：US07520956B2
公开(公告)日：2009-04-21
申请号：US10501351
申请日：2003-02-03
IPC分类号： C23F1/00 , H01L21/306 , H01L23/58 , G01R27/26
CPC分类号： H01L22/34 , H01L2924/0002 , H01L2924/00
摘要： An on-wafer monitoring system is placed at a position of a substrate to be treated in a plasma treatment device. The on-wafer monitoring system includes various sensors, a data I/O unit for optically inputting/outputting data to/from outside, and an internal power source unit for supplying power to them. The on-wafer data I/O unit is connected to a laser diode (LD) and a photo diode (PD) which are optical I/O units installed outside. The data I/O unit receives an instruction from outside and transmits monitored data to outside. Sensors arranged on the substrate are an ion energy analyzer, a VUV photon detector, and a radical ion species emission spectrophotometer.
摘要翻译： 将晶片上监视系统放置在等离子体处理装置中待处理基板的位置。 晶片上监视系统包括各种传感器，用于向外部光学地输入/输出数据的数据I / O单元和用于向外部供电的内部电源单元。 晶圆上的数据I / O单元连接到安装在外部的光学I / O单元的激光二极管（LD）和光电二极管（PD）。 数据I / O单元接收来自外部的指令，并将监视的数据发送到外部。 布置在基板上的传感器是离子能量分析仪，VUV光子检测器和自由基离子物质发射分光光度计。
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公开(公告)号：US20090058432A1
公开(公告)日：2009-03-05
申请号：US12219185
申请日：2008-07-17
申请人： Jun Hashimoto , Shinji Kawada , Ikuo Kurachi , Seiji Samukawa
发明人： Jun Hashimoto , Shinji Kawada , Ikuo Kurachi , Seiji Samukawa
IPC分类号： G01R27/02
CPC分类号： H01L22/14 , H01L2924/0002 , H01L2924/00
摘要： An ultraviolet light monitoring system includes first and second electrodes, an evaluation subject film and a power source. The first and second electrodes are opposingly disposed and attract holes which are generated in accordance with irradiation of ultraviolet light. The evaluation subject film is formed in a vicinity of the first and second electrodes, and is a subject of evaluation of damage caused by the irradiation of ultraviolet light. The power source, at times of monitoring of the ultraviolet light, applies a predetermined bias to a series path formed by the first electrode, a gap between the first and second electrodes, and the second electrode.
摘要翻译： 紫外线监视系统包括第一和第二电极，评估对象胶片和电源。 第一和第二电极相对设置并且吸引根据紫外线的照射产生的孔。 评估对象膜形成在第一和第二电极附近，并且是评估由紫外线照射引起的损伤的对象。 在监视紫外线的时候，电源对由第一电极形成的串联路径，第一和第二电极与第二电极之间的间隙施加预定的偏压。
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公开(公告)号：US20080286883A1
公开(公告)日：2008-11-20
申请号：US12153848
申请日：2008-05-27
IPC分类号： H01L21/04
CPC分类号： H01L21/32136 , B82Y10/00 , H01L27/228 , H01L43/12
摘要： Provision of a process capable of preferably etching particularly PtMn used for a pin layer of an MRAM is an object: a dry etching method for performing dry etching on a layer including platinum and/or manganese by using pulse plasma and a production method of an MRAM, wherein the dry etching method is applied to processing of the pin layer. The MRAM is configured to have a memory portion comprising a magnetic memory element composed of tunnel magnetoresistive effect element formed by stacking a magnetic fixed layer having a fixed magnetization direction, a tunnel barrier layer and a magnetic layer capable of changing the magnetization direction.
摘要翻译： 提供一种能够优选刻蚀特别是用于MRAM的引脚层的PtMn的工艺是一种目标：通过使用脉冲等离子体对包括铂和/或锰的层进行干蚀刻的干式蚀刻方法和MRAM的制造方法 其中干蚀刻方法适用于针层的处理。 MRAM被配置为具有包括由通过堆叠具有固定磁化方向的磁性固定层，隧道势垒层和能够改变磁化方向的磁性层形成的隧道磁阻效应元件组成的磁存储元件的存储部分。
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公开(公告)号：US20080085604A1
公开(公告)日：2008-04-10
申请号：US11631597
申请日：2005-07-06
申请人： Yasuyuki Hoshino , Seiji Samukawa
发明人： Yasuyuki Hoshino , Seiji Samukawa
IPC分类号： H01L21/302
CPC分类号： H01L21/3065 , H01L21/31116 , H01L21/32137
摘要： The present invention develops a process for plasma treatment using a gas having no greenhouse effect in order to realize global environmental preservation and sophistication of plasma process performance and provides a process for plasma etching with high accuracy which process can depress damage to devices. The process for plasma treatment according to the present invention comprises the steps of feeding a treatment gas containing fluorine gas (F2) into a plasma generating chamber, alternately repeating application of high frequency electric field and stop of the application thereof to generate plasma, and carrying out substrate treatment by irradiating the plasma to a substrate. Furthermore, the substrate treatment may be carried out by individually or alternately extracting negative ions or positive ions from the plasma, or selectively extracting only negative ions, neutralizing them, to generate a neutral beam and irradiating the neutral beam to the substrate.
摘要翻译： 本发明开发了一种使用不具有温室效应的气体进行等离子体处理的方法，以实现全球环境保持和等离子体处理性能的复杂化，并且以高精度提供等离子体蚀刻的方法，该方法可以抑制对器件的损害。 根据本发明的等离子体处理方法包括以下步骤：将含氟气体（F 2 N 2）的处理气体进料到等离子体产生室中，交替重复施加高频电场并停止 其用于产生等离子体，并通过将等离子体照射到基底上进行基板处理。 此外，基板处理可以通过单独或交替地从等离子体中提取负离子或正离子，或者仅选择性地仅提取负离子，中和它们，以产生中性光束并将中性光束照射到衬底来进行。
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公开(公告)号：US20060213444A1
公开(公告)日：2006-09-28
申请号：US11377291
申请日：2006-03-17
申请人： Seiji Samukawa , Toshihisa Nozawa
发明人： Seiji Samukawa , Toshihisa Nozawa
CPC分类号： H01J37/32192 , C23C16/452 , C23C16/5096 , C23C16/511 , H01J37/32357 , H01L21/02274 , H01L21/3145
摘要： A deposition apparatus (10) comprises a plasma generation chamber (14) to which a pressure is applied with a treatment gas to generate plasma, a deposition chamber (20) in which a substrate is placed and a film is formed on the substrate, and a distribution plate (17) having a plurality of holes and provided between the plasma generation chamber (14) and the deposition chamber (20). A diameter of the hole in the distribution plate (17) has a size such that a pressure of the plasma generation chamber (14) is 2.0 times or more as high as that of the deposition chamber (20). The deposition apparatus (10) further comprises means for applying a predetermined bias voltage between the plasma generation chamber (14) and the deposition chamber (20).
摘要翻译： 沉积装置（10）包括：等离子体产生室（14），用处理气体施加压力以产生等离子体;沉积室（20），其中放置基板并在基板上形成膜;以及 具有多个孔并设置在等离子体产生室（14）和沉积室（20）之间的分配板（17）。 分配板（17）中的孔的直径具有使得等离子体产生室（14）的压力为淀积室（20）的压力的2.0倍以上的尺寸。 沉积设备（10）还包括用于在等离子体产生室（14）和沉积室（20）之间施加预定偏压的装置。
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公开(公告)号：US07078862B2
公开(公告)日：2006-07-18
申请号：US10797596
申请日：2004-03-11
申请人： Akira Fukuda , Akio Shibata , Hirokuni Hiyama , Katsunori Ichiki , Kazuo Yamauchi , Seiji Samukawa
发明人： Akira Fukuda , Akio Shibata , Hirokuni Hiyama , Katsunori Ichiki , Kazuo Yamauchi , Seiji Samukawa
CPC分类号： H01J37/321 , H01J37/32357
摘要： A beam source has a plasma generating chamber, an antenna for generating plasma in the plasma generating chamber, a first electrode disposed in the plasma generating chamber, and a second electrode disposed in the plasma generating chamber. Both of the antenna and the second electrode face the first electrode. The beam source also includes a power supply for applying a voltage between the first electrode and the second electrode to extract particles from the plasma generated by the antenna. The beam source applies various kinds of beams having a large diameter, such as a positive ion beam, a negative ion beam, and a neutral particle beam, uniformly to a workpiece.
摘要翻译： 光束源具有等离子体产生室，用于在等离子体产生室中产生等离子体的天线，设置在等离子体发生室中的第一电极和设置在等离子体产生室中的第二电极。 天线和第二电极都面向第一电极。 光束源还包括用于在第一电极和第二电极之间施加电压从而从天线产生的等离子体中提取粒子的电源。 光束源对工件均匀地施加各种具有大直径的光束，例如正离子束，负离子束和中性粒子束。
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公开(公告)号：US06861642B2
公开(公告)日：2005-03-01
申请号：US10451633
申请日：2002-03-22
IPC分类号： C23C14/32 , G21K1/14 , H01J37/317 , H01J37/32 , H01L21/302 , H01L21/3065 , H01L21/31 , H05H1/46 , H05H3/00 , H05H3/02
CPC分类号： H01J37/32357 , G21K1/14 , H01J37/3178 , H05H3/02
摘要： A neutral particle beam processing apparatus comprises a workpiece holder (20) for holding a workpiece (X), a plasma generator for generating a plasma in a vacuum chamber (3), an orifice electrode (5) disposed between the workpiece holder (20) and the plasma generator, and a grid electrode (4) disposed upstream of the orifice electrode (5) in the vacuum chamber (3). The orifice electrode (5) has orifices (5a) defined therein. The neutral particle beam processing apparatus further comprises a voltage applying unit for applying a voltage between the orifice electrode (5) and the grid electrode (4) via a dielectric (5b) to extract positive ions from the plasma generated by the plasma generator and pass the extracted positive ions through the orifices (5a) in the orifice electrode (5).
摘要翻译： 中性粒子束处理装置包括用于保持工件（X）的工件保持器（20），用于在真空室（3）中产生等离子体的等离子体发生器，设置在工件保持器（20）之间的孔电极（5） 和等离子体发生器，以及设置在真空室（3）中的孔电极（5）的上游的栅电极（4）。 孔口电极（5）具有限定在其中的孔口（5a）。 中性粒子束处理装置还包括电压施加单元，用于通过电介质（5b）在孔电极（5）和栅电极（4）之间施加电压，以从等离子体发生器产生的等离子体中提取正离子并通过 通过孔电极（5）中的孔（5a）提取的正离子。
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公开(公告)号：US5744796A
公开(公告)日：1998-04-28
申请号：US744366
申请日：1996-11-07
申请人： Keizo Kinoshita , Seiji Samukawa , Tetsu Mieno
发明人： Keizo Kinoshita , Seiji Samukawa , Tetsu Mieno
CPC分类号： H01J37/32935 , H01J49/14
摘要： In a mass spectrometer, a DC power supply amplifier is additionally provided in a circuit for generating an accelerating voltage of an electron beam for ionizing radicals. A "potential for ionization of radicals" is applied as a reference voltage of the accelerating voltage of the radical ionizing electron beam, and an output signal of the mass spectrometer is measured as a background signal strength. Then, the DC power supply amplifier is controlled to alternately supply the "potential for ionization of radicals" and a "potential slightly lower than a potential for dissociative ionization of parent gas or dissociative ionization of parent radicals", as the accelerating voltage of the radical ionizing electron beam. A difference between the background signal strength and the output signal of the mass spectrometer when the "potential slightly lower than a potential for dissociative ionization of parent gas or dissociative ionization of parent radicals" is applied as the accelerating voltage of the radical ionizing electron beam, reflects the density of radicals.
摘要翻译： 在质谱仪中，在用于产生用于电离自由基的电子束的加速电压的电路中另外提供直流电源放大器。 作为自由基电离电子束的加速电压的基准电压，施加“自由基离子化的电位”，并且测量质谱仪的输出信号作为背景信号强度。 然后，控制直流电源放大器交替地提供“自由基电离的潜力”和“母体气体离解电离的潜力或亲本自由基的离解电离的潜力”，作为激进的加速电压 电离电子束。 作为自由基电离电子束的加速电压，使用“电位略低于母体的离子化离子化电位或母体自由基的离解电离的电位”时的质谱仪的背景信号强度和输出信号之间的差异， 反映了自由基的密度。
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