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    Speaker system for use in an automobile vehicle
    1.
    发明授权
    Speaker system for use in an automobile vehicle 失效
    扬声器系统用于汽车

    公开(公告)号：US5854847A

    公开(公告)日：1998-12-29

    申请号：US15796

    申请日：1998-01-29

    申请人： Minoru Yoshida ,  Keishi Saito ,  Fumio Matsushita ,  Katsumi Amano ,  Satoshi Kumada ,  Yoshiki Ohta

    发明人： Minoru Yoshida ,  Keishi Saito ,  Fumio Matsushita ,  Katsumi Amano ,  Satoshi Kumada ,  Yoshiki Ohta

    IPC分类号： B60R11/02 ,  G10K15/00 ,  H03G5/02 ,  H04R5/02 ,  H04S5/02 ,  H04B1/00

    CPC分类号： H04R5/00 ,  H04S2400/05 ,  H04S5/005

    摘要： A speaker system for use in an automobile vehicle, comprises: pair of side speakers disposed on left and right sides in a front section within the automobile vehicle; a central speaker disposed in a middle position between the two side speakers; a pair of delay circuits connected on two signal lines leading to the side speakers disposed on the left and right sides within the vehicle; an adder connected between the left and right channels to add together the electric signals transmitted from the left and right channels so as to produce a sum signal; and a band pass filter connected on a signal line leading to the central speaker, said band pass filter being constructed and adjusted to eliminate a high frequency signal component. The sum signal fed from the adder is passed through the band pass filter before being applied to the central speaker.

    摘要翻译： 一种用于汽车的扬声器系统，包括：一对侧扬声器，其设置在汽车内的前部的左侧和右侧; 设置在两侧扬声器之间的中间位置的中央扬声器; 一对延迟电路，其连接在通向设置在车辆内的左侧和右侧的侧扬声器的两根信号线上; 连接在左右通道之间的加法器，用于将从左右通道发送的电信号相加，以产生和信号; 连接在通向中央扬声器的信号线上的带通滤波器，构成并调整所述带通滤波器以消除高频信号分量。 从加法器馈送的和信号在施加到中央扬声器之前通过带通滤波器。

    IMAGE FORMING METHOD USING ULTRASOUND AND ABERRATION CORRECTION METHOD
    2.
    发明申请
    IMAGE FORMING METHOD USING ULTRASOUND AND ABERRATION CORRECTION METHOD 有权
    使用超声和去噪校正方法的图像形成方法

    公开(公告)号：US20110098568A1

    公开(公告)日：2011-04-28

    申请号：US12937535

    申请日：2009-04-03

    申请人： Yasuhiro Someda ,  Kenichi Nagae ,  Katsuya Oikawa ,  Keishi Saito ,  Yasuyoshi Takai ,  Hirofumi Taki ,  Toru Sato

    发明人： Yasuhiro Someda ,  Kenichi Nagae ,  Katsuya Oikawa ,  Keishi Saito ,  Yasuyoshi Takai ,  Hirofumi Taki ,  Toru Sato

    IPC分类号： A61B8/14

    CPC分类号： G01S7/52049 ,  G01S15/8952

    摘要： An ultrasound image forming method comprises a first step of receiving a first signal reflected from the object, a second step of obtaining an aberration correction value based on the first signal thus received, a third step of receiving a second signal reflected from the object when a second ultrasound corrected based on the aberration correction value is transmitted to the object, and a fourth step of forming an image from the aberration correction value and the second signal. The center frequency of the second ultrasound is between 0.5 MHz and 20 MHz, the center frequency of the first ultrasound is between 3/16 and 9/20 of the center frequency of the second ultrasound. By this method, an accurate aberration correction value can be obtained and an ultrasound imaging with high resolution can be achieved even if aberrations are large and difficult to correct.

    摘要翻译： 超声波图像形成方法包括：接收从对象反射的第一信号的第一步骤，基于如此接收的第一信号获得像差校正值的第二步骤;接收从物体反射的第二信号的第三步骤，当第 基于像差校正值校正的第二超声波被发送到物体，以及第四步骤，根据像差校正值和第二信号形成图像。 第二超声的中心频率在0.5MHz和20MHz之间，第一超声的中心频率在第二超声的中心频率的3/16和9/20之间。 通过该方法，可以获得精确的像差校正值，即使像差大，难以校正也能够实现高分辨率的超声波成像。

    Method of forming deposited film and method of forming photovoltaic element
    3.
    发明授权
    Method of forming deposited film and method of forming photovoltaic element 失效
    形成沉积膜的方法和形成光伏元件的方法

    公开(公告)号：US07700165B2

    公开(公告)日：2010-04-20

    申请号：US11627066

    申请日：2007-01-25

    申请人： Yasuyoshi Takai ,  Masafumi Sano ,  Keishi Saito

    发明人： Yasuyoshi Takai ,  Masafumi Sano ,  Keishi Saito

    IPC分类号： H05H1/24

    CPC分类号： C23C16/24 ,  C23C16/45523 ,  C23C16/545 ,  Y02E10/545 ,  Y02E10/548

    摘要： Provided is a deposited film containing microcrystalline silicon by plasma CVD, which includes changing at least one of conditions selected from a high frequency power density, a bias voltage with respect to an interelectrode distance, a bias current with respect to an electrode area, a high frequency power with respect to a source gas flow rate, a ratio of a diluting gas flow rate to a source gas flow rate, a substrate temperature, a pressure, and an interelectrode distance, between conditions for forming a deposited film of a microcrystalline region and conditions for forming a deposited film of an amorphous region; and forming a deposited film under conditions within a predetermined range in the vicinity of boundary conditions under which the crystal system of the deposited film substantially changes between a amorphous state and a microcrystalline state.

    摘要翻译： 提供了通过等离子体CVD包含微晶硅的沉积膜，其包括改变选自高频功率密度，相对于电极间距离的偏置电压，相对于电极面积的偏置电流，高电平 用于形成微晶区域的沉积膜的条件和相对于源气体流量的稀释气体流量的比率，稀释气体流量与源气体流量的比率，基板温度，压力和电极间距离 形成非晶区沉积膜的条件; 以及在沉积膜的晶体系统在非晶态和微晶态之间基本上变化的边界条件附近的预定范围内的条件下形成沉积膜。

    Stacked photovoltaic element
    6.
    发明授权
    Stacked photovoltaic element 有权
    堆叠光电元件

    公开(公告)号：US06483021B2

    公开(公告)日：2002-11-19

    申请号：US09257259

    申请日：1999-02-25

    申请人： Keishi Saito

    发明人： Keishi Saito

    IPC分类号： H01L3100

    CPC分类号： H01L31/03685 ,  H01L31/03687 ,  H01L31/076 ,  H01L31/206 ,  Y02E10/545 ,  Y02E10/548 ,  Y02P70/521

    摘要： The present invention provides a stacked photovoltaic element formed by stacking, on a substrate, at least a pin junction constituent element having a microcrystalline semiconductor in an i-type semiconductor layer and a pin junction constituent element having an amorphous semiconductor in an i-type semiconductor layer, wherein a current is controlled by the pin junction constituent element having the microcrystalline semiconductor in the i-type semiconductor layer, thereby obtaining a stacked photovoltaic element with a high photoelectric conversion efficiency and a reduced variation in the photoelectric conversion efficiency for a long light irradiation time.

    摘要翻译： 本发明提供一种层叠的光电元件，其通过在i型半导体中在至少具有微晶半导体的i型半导体层中的至少一个pin结构成元件和具有非晶半导体的pin结构成元件 层，其中电流由在i型半导体层中具有微晶半导体的pin结构成元件控制，从而获得具有高光电转换效率的叠层光伏元件和对于长光的光电转换效率的变化减小 照射时间。

    Photoelectric conversion elements
    7.
    发明授权
    Photoelectric conversion elements 失效
    光电转换元件

    公开(公告)号：US5456762A

    公开(公告)日：1995-10-10

    申请号：US171430

    申请日：1993-12-22

    申请人： Toshimitsu Kariya ,  Keishi Saito

    发明人： Toshimitsu Kariya ,  Keishi Saito

    IPC分类号： H01L27/00 ,  H01L31/036 ,  H01L31/04 ,  H01L31/052 ,  H01L31/075 ,  H01L31/10 ,  H01L31/105 ,  H01L31/18 ,  H01L31/20 ,  H01L31/0368 ,  H01L31/0376

    CPC分类号： H01L31/076 ,  H01L31/036 ,  H01L31/056 ,  H01L31/075 ,  H01L31/1055 ,  H01L31/1812 ,  H01L31/202 ,  H01L31/206 ,  Y02E10/52 ,  Y02E10/548 ,  Y02P70/521

    摘要： The present invention provides photoelectric conversion elements, wherein the long wavelength sensitivity, the fill factor, and the photoelectric conversion efficiency are improved. In order to provide photoelectric conversion elements wherein light deterioration is reduced, the field durability enhanced, and the temperature characteristic improved, a p-layer composed of amorphous silicon type semiconductor containing hydrogen, an i-layer composed of amorphous silicon-germanium type semiconductor containing hydrogen and further including microcrystalline germanium, and an n-layer composed of amorphous silicon type semiconductor containing hydrogen are laminated on a substrate, the i-layer being formed at a substrate temperature from 400.degree. to 600.degree. C. by microwave plasma CVD, the particle diameter of said microcrystalline germanium ranging from 50 to 500 angstroms. Also, the content of microcrystalline germanium varies in the layer thickness direction.

    摘要翻译： 本发明提供光电转换元件，其中提高了长波长灵敏度，填充因子和光电转换效率。 为了提供光劣化降低的光电转换元件，提高了场耐久性，提高了温度特性，由含有氢的非晶硅型半导体构成的p层，由含有氢的非晶硅锗型半导体构成的i层 氢并且还包括微晶锗，并且由含有氢的非晶硅型半导体构成的n层层叠在基板上，所述i层通过微波等离子体CVD在400〜600℃的基板温度下形成， 所述微晶锗的粒径为50-500埃。 此外，微晶锗的含量在层厚度方向上变化。