公开(公告)号：US4486245A

公开(公告)日：1984-12-04

申请号：US258558

申请日：1981-04-29

申请人： Mitsuo Chigasaki ,  Kiyoshi Otaka ,  Akira Okayama ,  Kenichi Onisawa ,  Ko Soeno

发明人： Mitsuo Chigasaki ,  Kiyoshi Otaka ,  Akira Okayama ,  Kenichi Onisawa ,  Ko Soeno

IPC分类号： C23C10/48 ,  C23C10/60 ,  F01D5/28 ,  C22F1/10

CPC分类号： F01D5/288 ,  C23C10/48 ,  C23C10/60

摘要： A structure comprising a main body formed of a nickel base alloy, and a NiAl coating applied to the main body, wherein the NiAl coating includes a nickel rich NiAl layer and an aluminum rich NiAl layer and the thickness ratio of the nickel rich NiAl layer to the whole NiAl coating is in a range between 20 and 40%. A method of applying an aluminum coating to a nickel base alloy comprising the steps of forming an aluminide layer of Ni.sub.2 Al.sub.3 on the surface portion of the nickel base alloy by the diffusion and penetration of aluminum, and subjecting the alumide layer to heat treatment to change the aluminide layer to a monoaluminide layer and making the thickness ratio of a nickel rich NiAl layer to the whole monoaluminide layer be in the range between 20 and 40%.

摘要翻译： 包括由镍基合金形成的主体和施加到主体的NiAl涂层的结构，其中所述NiAl涂层包括富镍的NiAl层和富铝的NiAl层，并且所述富镍的NiAl层的厚度比与 整个NiAl涂层在20至40％的范围内。 一种将铝涂层施加到镍基合金的方法，包括以下步骤：通过铝的扩散和渗透在镍基合金的表面部分上形成Ni2Al3的铝化物层，并对铝硅酸盐层进行热处理以改变 使铝化物层与单卤化物层成膜，并使富镍的NiAl层与整个单铝化物层的厚度比在20至40％的范围内。

公开(公告)号：US3951577A

公开(公告)日：1976-04-20

申请号：US441357

申请日：1974-02-11

申请人： Akira Okayama ,  Hisashi Ando ,  Ko Soeno ,  Hisasuke Takeuchi ,  Atsuya Kamada

发明人： Akira Okayama ,  Hisashi Ando ,  Ko Soeno ,  Hisasuke Takeuchi ,  Atsuya Kamada

IPC分类号： B01J2/02 ,  B22F9/08 ,  B22D23/08

CPC分类号： B22F9/082 ,  B22F2009/0884

摘要： This invention relates to an apparatus for production of metal powders of a low oxygen content, which are preferred as raw material powders for sintered bodies of a high toughness, according to the water atomizing method. More specifically, when a molten metal is sprayed in a limited space with use of a liquid crystal medium and cooled promptly, a metal powder results of a good moldability which has an oxygen content corresponding to 1/2 or less of the oxygen contents of metal powders prepared by conventional apparatuses and which is excellent in the size uniformity.

摘要翻译： 本发明涉及一种低氧含量的金属粉末的制造装置，其优选为根据水雾化法的高韧性的烧结体的原料粉末。 更具体地说，当使用液晶介质在有限的空间内喷射熔融金属并迅速冷却时，金属粉末具有良好的成型性，其氧含量对应于金属的氧含量的1/2 通过常规装置制备并且尺寸均匀性优异的粉末。

公开(公告)号：US4500904A

公开(公告)日：1985-02-19

申请号：US544119

申请日：1983-10-20

申请人： Jin Onuki ,  Ko Soeno ,  Keiichi Morita ,  Hisakithi Onodera

发明人： Jin Onuki ,  Ko Soeno ,  Keiichi Morita ,  Hisakithi Onodera

IPC分类号： H01L21/52 ,  H01L21/58 ,  H01L21/60 ,  H01L23/051 ,  H01L23/492 ,  H01L23/48

CPC分类号： H01L24/83 ,  H01L23/051 ,  H01L23/4924 ,  H01L23/4928 ,  H01L24/33 ,  H01L2224/291 ,  H01L2224/29111 ,  H01L2224/29124 ,  H01L2224/2919 ,  H01L2224/83191 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/10157 ,  H01L2924/12036 ,  H01L2924/1301 ,  H01L2924/15763 ,  H01L2924/3025

摘要： A solder joint between a semiconductor substrate and an electrode is disclosed in which that principal surface of the semiconductor substrate where an n-type semiconductor layer is exposed is bonded to the electrode with brazing solder, and the brazing solder includes aluminum solder provided on the side of the semiconductor substrate and copper solder provided on the side of the electrode. Since solid phase adhesion can be achieved between aluminum and copper even at temperatures below an eutectic temperature of 548.degree. C., the semiconductor substrate can be soldered to the electrode at the low temperatures.

摘要翻译： 公开了半导体衬底和电极之间的焊接接头，其中露出n型半导体层的半导体衬底的主表面用钎焊焊接到电极上，并且钎焊焊料包括设置在侧面上的铝焊料 的半导体衬底和设置在电极侧的铜焊料。 由于即使在低于共晶温度548℃的温度下也可以在铝和铜之间实现固相粘合，所以半导体衬底可以在低温下焊接到电极上。

公开(公告)号：US4114243A

公开(公告)日：1978-09-19

申请号：US775618

申请日：1977-03-08

申请人： Ko Soeno ,  Toshio Doi ,  Tomio Iizuka ,  Hiroshi Sakamoto ,  Hisashi Ando ,  Tetsuo Oyama ,  Akira Misumi

发明人： Ko Soeno ,  Toshio Doi ,  Tomio Iizuka ,  Hiroshi Sakamoto ,  Hisashi Ando ,  Tetsuo Oyama ,  Akira Misumi

IPC分类号： H01J1/14 ,  H01J9/04

CPC分类号： H01J9/04

摘要： In a process for producing a cathode for a cathode ray tube of directly heating type, which comprises shaping a heat-resistant and electro-conductive, flat metal plate, into a cathode substrate body having two leg pieces extended in the same direction and a flat part connected to one end of each leg piece, forming a heat-diffusible metal powder layer having a good affinity to said flat metal plate and on an outer surface of said flat part, heating the powder layer, thereby diffusion bonding the powder layer to the flat part and forming a bonding layer having an uneven surface, to which a thermionic emission layer is to be bonded, and forming the thermionic emission layer on the surface of the bonding layer, the process is characterized by forming on said flat metal plate a metal layer having a good affinity to the flat metal plate, by diffusion bonding, thereby forming a compound plate, and shaping the resulting compound plate into the shape of said cathode substrate body. A cathode having less thermal deformation and a longer life can be produced thereby.Furthermore, the process is characterized by applying a plastic working to the compound plate to a desired thickness and shaping the resulting compound plate into the shape of the cathode substrate body, and a cathode having much less thermal deformation and much longer life can be produced thereby.

摘要翻译： 在直接加热型阴极射线管用阴极的制造方法中，包括将耐热导电平板状金属板成形为具有沿相同方向延伸的两个支腿的阴极基板主体， 形成与所述平板状金属板和所述平坦部的外表面具有良好亲和性的热扩散性金属粉末层，加热所述粉末层，从而将所述粉末层扩散到 并且形成具有不平坦表面的接合层，热电子发射层将被结合到其上，并且在接合层的表面上形成热离子发射层，其特征在于在所述平坦金属板上形成金属 通过扩散接合对平板状金属板具有良好的亲和性，从而形成复合板，并将得到的化合物板成形为所述阴极基体的形状。 因此可以产生具有较少热变形和较长寿命的阴极。

公开(公告)号：US4319397A

公开(公告)日：1982-03-16

申请号：US165985

申请日：1980-07-07

申请人： Masanori Tanabe ,  Satoshi Shimada ,  Akio Yasukawa ,  Hideyuki Nemoto ,  Motohisa Nishihara ,  Masatoshi Tsuchiya ,  Ko Soeno

发明人： Masanori Tanabe ,  Satoshi Shimada ,  Akio Yasukawa ,  Hideyuki Nemoto ,  Motohisa Nishihara ,  Masatoshi Tsuchiya ,  Ko Soeno

IPC分类号： G01D5/16 ,  H01L29/84 ,  H01L21/58

CPC分类号： H01L29/84 ,  Y10T29/49103

摘要： A strain gauge is formed on one main surface of a semiconductor single crystal substrate while an insulating oxide film is formed on the other main surface of the substrate. A metal junction layer including several layers inclusive of eutectic alloy layers is formed on the surface of the insulating oxide film and the thus prepared structure is mounted on a metal strain generator. By heating this assembly to temperatures approximating to the eutectic point of the eutectic alloy layer, the semiconductor substrate and the metal strain generator are joined together.

摘要翻译： 在半导体单晶基板的一个主表面上形成应变计，同时在基板的另一个主表面上形成绝缘氧化膜。 在绝缘氧化膜的表面上形成包括共晶合金层的数层的金属接合层，将这样制作的结构安装在金属应变发生器上。 通过将该组件加热到接近共晶合金层的共晶点的温度，将半导体衬底和金属应变发生器连接在一起。

公开(公告)号：US4220891A

公开(公告)日：1980-09-02

申请号：US25582

申请日：1979-03-30

申请人： Hisashi Ando ,  Ko Soeno ,  Hiroshi Sakamoto ,  Testuo Oyama ,  Takao Kawamura ,  Hiroshi Fukushima

发明人： Hisashi Ando ,  Ko Soeno ,  Hiroshi Sakamoto ,  Testuo Oyama ,  Takao Kawamura ,  Hiroshi Fukushima

IPC分类号： H01J1/14 ,  H01J1/15 ,  H01J29/04 ,  H01J19/06

CPC分类号： H01J1/14

摘要： A directly heated cathode for electron tube having a stable electron emission characteristic and a low cut-off voltage is provided. The cathode comprises a base metal of an alloy consisting essentially of 20-30% by weight of tungsten and a trace amount to 0.25% by weight of zirconium, the balance being nickel, binder dots of metallic nickel powders distributed on a flat part at the front side of the base metal, and a layer of thermoelectron emission oxides laid on the flat part at the front side of the base metal. The layer of thermoelectron emission oxides is in direct contact with the flat part through clearances among the binder dots of the metallic nickel powders.

摘要翻译： 提供具有稳定的电子发射特性和低截止电压的用于电子管的直接加热阴极。 阴极包括基本上由20-30重量％的钨组成的合金的基体金属和微量的0.25重量％的锆，余量为镍，分布在平坦部分上的金属镍粉末的粘结点 贱金属的前侧，以及放置在贱金属前侧的平坦部分上的热电子发射氧化物层。 热电子发射氧化物层通过金属镍粉末的粘合剂点之间的间隙与平坦部分直接接触。

公开(公告)号：US4310777A

公开(公告)日：1982-01-12

申请号：US110920

申请日：1980-01-10

申请人： Hiroshi Fukushima ,  Ko Soeno ,  Hisashi Ando ,  Shigehiko Yamamoto ,  Toshiyuki Aida

发明人： Hiroshi Fukushima ,  Ko Soeno ,  Hisashi Ando ,  Shigehiko Yamamoto ,  Toshiyuki Aida

IPC分类号： H01J1/14 ,  H01J1/15 ,  H01J1/18

CPC分类号： H01J1/18

摘要： A directly heated cathode for an electron tube comprising a base plate made of an alloy containing 20 to 30% by weight of W, 0.12 to 0.28% by weight of Zr and the remainder being Ni and an electron emissive oxide layer disposed directly on the base plate shows good and stable electron emission properties and when it is installed in a television picture tube, the picture tube shows excellent initial properties.

摘要翻译： 一种用于电子管的直接加热阴极，包括由包含20至30重量％的W，0.12至0.28重量％的Zr和余量为Ni的合金制成的基板和直接设置在基底上的电子发射氧化物层 板显示出良好且稳定的电子发射特性，并且当其安装在电视显像管中时，显像管显示出优异的初始特性。

公开(公告)号：US4246693A

公开(公告)日：1981-01-27

申请号：US32018

申请日：1979-04-20

申请人： Jin Onuki ,  Ko Soeno ,  Masateru Suwa ,  Hisakichi Onodera

发明人： Jin Onuki ,  Ko Soeno ,  Masateru Suwa ,  Hisakichi Onodera

IPC分类号： B23K1/00 ,  H01L21/306 ,  H01L21/52 ,  H01L21/60 ,  H01L29/41 ,  H01L21/22 ,  H01L21/28

CPC分类号： H01L24/80 ,  H01L21/306 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01051 ,  H01L2924/01072 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12036 ,  H01L2924/1301 ,  Y10S148/018 ,  Y10S148/02

摘要： There is provided a method of fabricating a semiconductor device wherein in a bonding surface of a silicon substrate of n-type conductivity are formed recesses having each a bonding surface of a higher order plane index than that of the bonding surface of the silicon substrate, and the substrate and electrodes and the like members are bonded together with an aluminum solder so as to decrease a forward voltage drop FVD. After forming the recesses but prior to the bonding with the aluminum solder, phosphor is diffused into a region ranging from the bonding surface to a depth of 20 microns, thereby further decreasing the forward voltage drop FVD. When cooling after the bonding, a temperature gradient is established so that temperature in the silicon substrate is higher than a temperature in the molten aluminum so that the forward voltage drop FVD can be decreased further.

摘要翻译： 提供了一种制造半导体器件的方法，其中在n型导电性硅衬底的接合表面中形成具有比硅衬底的接合表面高的平面折射率的接合表面的凹槽，以及 基板和电极等部件用铝焊料接合在一起，以便减小正向压降FVD。 在形成凹部之后但是在与铝焊料接合之前，磷光体扩散到从接合表面到20微米深度的区域中，从而进一步减小正向压降FVD。 在接合后进行冷却时，建立温度梯度，使得硅衬底中的温度高于熔融铝中的温度，从而可以进一步降低正向压降FVD。

公开(公告)号：US4499774A

公开(公告)日：1985-02-19

申请号：US284340

申请日：1981-07-17

申请人： Masatoshi Tsuchiya ,  Ko Soeno ,  Tomomasa Yoshida

发明人： Masatoshi Tsuchiya ,  Ko Soeno ,  Tomomasa Yoshida

IPC分类号： G01L9/04 ,  C21D9/00 ,  C22C38/00 ,  C22C38/10 ,  G01L9/00 ,  H01L29/84 ,  G01L9/06

CPC分类号： G01L19/147

摘要： A semiconductor pressure transducer comprising a piezoresistive semiconductor diaphragm, a cylindrical stem made of a glass having a thermal expansion coefficient approximating that of the diaphragm and hermetically bonded by anodic bonding to the latter, and a cylindrical holder hermetically bonded by anodic bonding to the cylindrical stem is disclosed. The holder is made of a ferromagnetic alloy material containing Fe, Co and Ni and having a mean thermal expansion coefficient of 35.times.10.sup.-7 /.degree.C. or less within the temperature range between 30.degree. C. and 350.degree. C.

摘要翻译： 一种半导体压力传感器，包括压电半导体膜片，由玻璃制成的圆柱形阀杆，其热膨胀系数接近隔膜的热膨胀系数，并通过阳极接合而密封粘合到隔膜上;以及圆柱形保持器，通过阳极接合气密地接合到圆柱形杆 被披露。 夹持器由含Fe，Co和Ni的铁磁合金材料制成，在30℃至350℃的温度范围内的平均热膨胀系数为35×10 -7 /℃以下。

公开(公告)号：US4349766A

公开(公告)日：1982-09-14

申请号：US143898

申请日：1980-04-25

申请人： Hisashi Ando ,  Ko Soeno ,  Hiroshi Sakamoto ,  Akira Misumi ,  Hiroshi Fukushima

发明人： Hisashi Ando ,  Ko Soeno ,  Hiroshi Sakamoto ,  Akira Misumi ,  Hiroshi Fukushima

IPC分类号： H01J1/14 ,  H01J1/15 ,  H01J19/06 ,  H01K1/04

CPC分类号： H01J1/15

摘要： A directly heated cathode for electron tube having a stable electron emission characteristic is provided. The cathode comprises a base metal of Ni-W alloy consisting essentially of 20-30% by weight of tungsten, the balance being nickel and incidental impurities, said alloy being free from a reducing agent, and a layer of thermoelectron emission oxides laid directly and baked onto the flat part at the front side of the base metal. The layer of thermoelectron emission oxides is in direct contact with the flat part of the base metal.

摘要翻译： 提供具有稳定的电子发射特性的用于电子管的直接加热阴极。 阴极包括Ni-W合金的贱金属，其基本上由20-30重量％的钨组成，余量为镍和偶然杂质，所述合金不含还原剂，以及直接和 烘烤在贱金属正面的平坦部分上。 热电子发射氧化物层与贱金属的平坦部分直接接触。