Composite material comprising activated carbon and expanded graphite
    1.
    发明申请
    Composite material comprising activated carbon and expanded graphite 有权
    复合材料包括活性炭和膨胀石墨

    公开(公告)号:US20030003289A1

    公开(公告)日:2003-01-02

    申请号:US10182134

    申请日:2002-07-26

    IPC分类号: C01B031/12 B32B003/26

    摘要: The invention concerns a composite material comprising activated carbon and expanded graphite. The material is a block wherein the activated carbon is homogeneously and uniformly distributed in the form of microporous particles. The texture of said particles is characterised by a microporous volume W0 ranging between 0.1 cm3gnull1and 1.5 cm3gnull1 and a mean pore dimension L0 ranging between 2 null and 30 null, the activated carbon particles have substantially the same texture wherever they are located in the composite material, the thermal conductivity levels of the material range between 1 and 100 Wmnull1Knull1. Said material is obtained by heat treatment of a mixture of expanded graphite and an activated carbon precursor in the presence of an activating temperature and for a time interval sufficient to obtain a wear rate of the activated carbon precursor ranging between 5 and 70 % by mass.

    摘要翻译: 本发明涉及包含活性炭和膨胀石墨的复合材料。 该材料是其中活性炭以微孔颗粒的形式均匀均匀分布的嵌段。 所述颗粒的织构特征在于微孔体积W0在0.1cm 3 g -1和1.5cm 3 g -1之间,平均孔尺寸L 0在2和30之间,活性炭颗粒具有基本上相同的结构,无论它们位于何处 复合材料,材料的导热系数范围介于1和100 Wm-1K-1之间。 所述材料是通过在活化温度存在下对膨胀石墨和活性炭前体的混合物进行热处理得到的,所述时间间隔足以获得活性炭前体的磨损率在5-70质量%之间。

    Anisotropic niobium pentoxide etch
    2.
    发明授权
    Anisotropic niobium pentoxide etch 失效
    各向异性五氧化二铌蚀刻

    公开(公告)号:US5201989A

    公开(公告)日:1993-04-13

    申请号:US872701

    申请日:1992-04-20

    摘要: A niobium pentoxide substrate 34 immersed in a liquid ambient (e.g. 10% hydrofluoric acid 30) and illuminated with radiation (e.g. collimated visible/ultraviolet radiation 24) produced by a radiation source (e.g. a 200 Watt mercury xenon arc lamp 20). A window 26 which is substantially transparent to the collimated radiation 24 allows the radiated energy to reach the Nb.sub.2 O.sub.5 substrate 34. An etch mask (e.g. organic photoresist 32) may be positioned between the radiation source 20 and the substrate 34. The Nb.sub.2 O.sub.5 substrate 34 and liquid ambient 30 are maintained at a nominal temperature (e.g. 25.degree. C.). Without illumination, the Nb.sub.2 O.sub.5 is not appreciably etched by the liquid ambient. Upon illumination the etch rate is substantially increased.

    摘要翻译: 浸渍在液体环境(例如10%氢氟酸30)中并用辐射源(例如,200瓦汞氙弧灯20)产生的辐射(例如准直的可见/紫外线辐射24)照射的五氧化二铌衬底34。 对准直辐射24基本透明的窗口26允许辐射能量到达Nb 2 O 5衬底34.蚀刻掩模(例如有机光致抗蚀剂32)可以位于辐射源20和衬底34之间.Nb 2 O 5衬底34和 液体环境30保持在标称温度(例如25℃)。 在没有照明的情况下,Nb 2 O 5不被液体环境明显腐蚀。 在照射时,蚀刻速率显着增加。

    Anisotropic cordierite monolith
    5.
    发明授权
    Anisotropic cordierite monolith 失效
    各向异性堇青石整料

    公开(公告)号:US3885977A

    公开(公告)日:1975-05-27

    申请号:US41286273

    申请日:1973-11-05

    摘要: An extruded, honeycombed, monolithic fired ceramic whose primary crystal phase is cordierite and whose microstructure is characterized by a greater than random orientation of the anisotropic cordierite crystallites with their low expansion direction aligned substantially parallel to the plane of the webs of the monolith. The axial expansion coefficient of the honeycomb, with composition near that of stoichiometric cordierite, may be as low as 5.5 X 10 7 in./in./*C. or lower in the range of 25*-1000*C. The product is particularly adapted to use as a catalytic support matrix for emissions control.

    摘要翻译: 一种挤出的,蜂窝状的整体式烧结陶瓷,其主晶相是堇青石,其微结构的特征在于各向异性堇青石微晶的随机取向具有大的平行于整料块的平面的低膨胀方向。 具有接近化学计量堇青石的蜂窝体的轴向膨胀系数可以低至5.5×10 -7 / in./℃或更低,在25-1000℃的范围内。

    Damping in composite materials through domain wall motion
    9.
    发明申请
    Damping in composite materials through domain wall motion 审中-公开
    通过畴壁运动阻挡复合材料

    公开(公告)号:US20040138366A1

    公开(公告)日:2004-07-15

    申请号:US10744868

    申请日:2003-12-22

    IPC分类号: C08K003/10

    摘要: The present invention relates to composite materials exhibiting passive domain-wall activated damping, methods for using passive domain-wall activated damping, and processes for producing materials that exhibit passive domain-wall activated damping. One typical embodiment uses a polymer matrix phase and a dispersed particulate phase that exhibits domain wall motion under an applied mechanical load. Materials that exhibit domain wall motion under an applied mechanical load include magnetostrictive, piezoelectric and electrostrictive materials. One specific embodiment used Terfenol-D as the damping phase, aligned by magnetization during curing in a polymer matrix. Other specific embodiments employed PZT-5H and PMN-PT as the damping phase.

    摘要翻译: 本发明涉及显示被动域壁激活阻尼的复合材料,使用被动域壁激活阻尼的方法,以及用于生产呈现被动域壁激活阻尼的材料的方法。 一个典型的实施方案使用聚合物基质相和分散的颗粒相,其在施加的机械负荷下显示畴壁运动。 在施加的机械载荷下显示畴壁运动的材料包括磁致伸缩,压电和电致伸缩材料。 一个具体实施方案使用Terfenol-D作为阻尼相,在聚合物基质中固化过程中通过磁化进行排列。 其他具体实施方案采用PZT-5H和PMN-PT作为阻尼相。

    Damping in composite materials through domain wall motion
    10.
    发明申请
    Damping in composite materials through domain wall motion 审中-公开
    通过畴壁运动阻挡复合材料

    公开(公告)号:US20020004543A1

    公开(公告)日:2002-01-10

    申请号:US09844409

    申请日:2001-04-27

    摘要: The present invention relates to composite materials exhibiting passive domain-wall activated damping, methods for using passive domain-wall activated damping, and processes for producing materials that exhibit passive domain-wall activated damping. One typical embodiment uses a polymer matrix phase and a dispersed particulate phase that exhibits domain wall motion under an applied mechanical load. Materials that exhibit domain wall motion under an applied mechanical load include magnetostrictive, piezoelectric and electrostrictive materials. One specific embodiment used Terfenol-D as the damping phase, aligned by magnetization during curing in a polymer matrix. Other specific embodiments employed PZT-5H and PMN-PT as the damping phase.

    摘要翻译: 本发明涉及显示被动域壁激活阻尼的复合材料,使用被动域壁激活阻尼的方法,以及用于生产呈现被动域壁激活阻尼的材料的方法。 一个典型的实施方案使用聚合物基质相和分散的颗粒相,其在施加的机械载荷下显示畴壁运动。 在施加的机械载荷下显示畴壁运动的材料包括磁致伸缩,压电和电致伸缩材料。 一个具体实施方案使用Terfenol-D作为阻尼相,在聚合物基质中固化过程中通过磁化进行排列。 其他具体实施方案采用PZT-5H和PMN-PT作为阻尼相。