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    Growth method of GaN crystal, and GaN crystal substrate
    2.
    发明授权
    Growth method of GaN crystal, and GaN crystal substrate 失效
    GaN晶体和GaN晶体衬底的生长方法

    公开(公告)号：US07723142B2

    公开(公告)日：2010-05-25

    申请号：US12130082

    申请日：2008-05-30

    申请人： Naoki Matsumoto ,  Fumitaka Sato ,  Seiji Nakahata ,  Takuji Okahisa ,  Koji Uematsu

    发明人： Naoki Matsumoto ,  Fumitaka Sato ,  Seiji Nakahata ,  Takuji Okahisa ,  Koji Uematsu

    IPC分类号： H01L21/00 ,  H01L31/20

    CPC分类号： C30B29/406 ,  C30B25/20

    摘要： A method of producing a GaN crystal is directed to growing a GaN crystal on a GaN seed crystal substrate. The method includes the steps of preparing a GaN seed crystal substrate including a first dopant such that the thermal expansion coefficient of the GaN seed crystal substrate becomes greater than that of the GaN crystal, and growing the GaN crystal to a thickness of at least 1 mm on the GaN seed crystal substrate. Accordingly, there can be provided a method of producing a GaN crystal that can suppress generation of a crack and grow a thick GaN crystal, and a GaN crystal substrate.

    摘要翻译： 制造GaN晶体的方法涉及在GaN晶种衬底上生长GaN晶体。 该方法包括以下步骤：制备包括第一掺杂剂的GaN晶种衬底，使得GaN晶种衬底的热膨胀系数变得大于GaN晶体的热膨胀系数，并将GaN晶体生长至至少1mm的厚度 在GaN晶种衬底上。 因此，可以提供一种能够抑制裂纹的产生和生长厚GaN的晶体的GaN晶体的制造方法以及GaN晶体基板。

    GROWTH METHOD OF GaN CRYSTAL, AND GaN CRYSTAL SUBSTRATE
    7.
    发明申请
    GROWTH METHOD OF GaN CRYSTAL, AND GaN CRYSTAL SUBSTRATE 失效
    GaN晶体和GaN晶体衬底的生长方法

    公开(公告)号：US20080296585A1

    公开(公告)日：2008-12-04

    申请号：US12130082

    申请日：2008-05-30

    申请人： Naoki MATSUMOTO ,  Fumitaka Sato ,  Seiji Nakahata ,  Takuji Okahisa ,  Koji Uematsu

    发明人： Naoki MATSUMOTO ,  Fumitaka Sato ,  Seiji Nakahata ,  Takuji Okahisa ,  Koji Uematsu

    IPC分类号： H01L29/207 ,  H01L21/205

    CPC分类号： C30B29/406 ,  C30B25/20

    摘要： A method of producing a GaN crystal is directed to growing a GaN crystal on a GaN seed crystal substrate. The method includes the steps of preparing a GaN seed crystal substrate including a first dopant such that the thermal expansion coefficient of the GaN seed crystal substrate becomes greater than that of the GaN crystal, and growing the GaN crystal to a thickness of at least 1 mm on the GaN seed crystal substrate. Accordingly, there can be provided a method of producing a GaN crystal that can suppress generation of a crack and grow a thick GaN crystal, and a GaN crystal substrate.

    摘要翻译： 制造GaN晶体的方法涉及在GaN晶种衬底上生长GaN晶体。 该方法包括以下步骤：制备包括第一掺杂剂的GaN籽晶衬底，使得GaN晶种衬底的热膨胀系数变得大于GaN晶体的热膨胀系数，并将GaN晶体生长至至少1mm的厚度 在GaN晶种衬底上。 因此，可以提供一种能够抑制裂纹的产生和生长厚GaN的晶体的GaN晶体的制造方法以及GaN晶体基板。

    Nitride semiconductor substrate and method of producing same
    9.
    发明授权
    Nitride semiconductor substrate and method of producing same 有权
    氮化物半导体衬底及其制造方法

    公开(公告)号：US07772585B2

    公开(公告)日：2010-08-10

    申请号：US11446955

    申请日：2006-06-06

    申请人： Koji Uematsu ,  Fumitaka Sato ,  Ryu Hirota ,  Seiji Nakahata ,  Hideaki Nakahata

    发明人： Koji Uematsu ,  Fumitaka Sato ,  Ryu Hirota ,  Seiji Nakahata ,  Hideaki Nakahata

    IPC分类号： H01L31/00 ,  C30B25/00 ,  H01L21/00

    CPC分类号： C30B29/403 ,  C30B25/18 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02395 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02647

    摘要： A nitride semiconductor crystal substrate is produced by forming a network mask repeating a closed loop unit shape upon an undersubstrate, growing a nitride semiconductor crystal in vapor phase, producing convex facet hills covered with facets on exposed parts Π, forming outlining concavities on mask-covered parts , not burying the facets, maintaining the convex facet hills on Π and the network concavities on , excluding dislocations in the facet hills down to the outlining concavities on , forming a defect accumulating region H on , decreasing dislocations in the facet hills and improving the facet hills to low defect density single crystal regions Z, producing a rugged nitride crystal, and slicing and polishing the nitride crystal into mirror nitride crystal wafers. After the fabrication of devices on the nitride wafer, dry-etching or wet etching of hot KOH or NaOH divides the device-carrying wafer into chips by corroding the network defect accumulating region H.

    摘要翻译： 通过在下衬底上形成重复闭环单元形状的网络掩模，在气相中生长氮化物半导体晶体，产生在暴露部分“Pgr”上覆盖有小面的凸面小丘，从而形成氮化物半导体晶体衬底; 覆盖部分，不掩埋小面，保持凸面小丘在＆Pgr; 和网络凹面，不考虑小平面上的位错，形成凹陷凹陷，形成缺陷积聚区H，减小了小平面山丘的位错，改善了小丘到低缺陷密度单晶区Z，产生了坚固的 氮化物晶体，并将氮化物晶体切割和研磨成镜状氮化物晶片。 在氮化物晶片上的器件制造之后，通过腐蚀网络缺陷累积区域H将热的KOH或NaOH的干蚀刻或湿法蚀刻将装载的晶片分成芯片。