公开(公告)号：US5322568A

公开(公告)日：1994-06-21

申请号：US999548

申请日：1992-12-31

申请人： Shunichi Ishihara ,  Jun-ichi Hanna ,  Isamu Shimizu ,  Masaaki Hirooka

发明人： Shunichi Ishihara ,  Jun-ichi Hanna ,  Isamu Shimizu ,  Masaaki Hirooka

IPC分类号： C23C16/452 ,  C23C16/00

CPC分类号： C23C16/452

摘要： An apparatus for forming a deposited film by introducing two or more kinds of gaseous starting materials for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action for said starting materials into a reaction space to effect chemical contact therebetween to thereby form a plural number of precursors including precursors under excited state, and forming a deposited film in a plurality of layers with different compositions on a substrate existing in a film forming space spatially communicated with said reaction space with the use of at least one precursor of the precursors as the feeding source for the constituent element of the deposited film, said apparatus comprising a plural number of gas introducing means of a multiple tubular structure for discharging into said reaction space said gaseous starting materials and said gaseous halogenic oxidizing agent through the discharging outlets, respectively, and permitting them to react with each other to form the precursors and means for preventing contact of precursors unnecessary for the desired film formation of the precursors with the substrate.

摘要翻译： 一种用于通过将用于形成沉积膜的两种或更多种气态起始材料和具有用于所述原料的氧化作用的气态卤素氧化剂引入反应空间以在其间进行化学接触而形成沉积膜的装置，由此 形成多个前体，其包括在激发态下的前体，并且在存在于与所述反应空间空间连通的成膜空间中的基底上形成具有不同组成的多个层的沉积膜，其中使用至少一种前体 前体作为沉积膜的构成元素的进料源，所述装置包括多个多管状结构的气体引入装置，用于通过排出口将所述气态原料和所述气态卤素氧化剂排放到所述反应空间中， 并允许他们作出反应 彼此形成前体和用于防止前体与基质的所需膜形成所必需的前体接触的装置。

公开(公告)号：US4865883A

公开(公告)日：1989-09-12

申请号：US298202

申请日：1989-01-17

申请人： Keishi Saitoh ,  Masaaki Hirooka ,  Jun-ichi Hanna ,  Isamu Shimizu

发明人： Keishi Saitoh ,  Masaaki Hirooka ,  Jun-ichi Hanna ,  Isamu Shimizu

IPC分类号： H01L31/04 ,  C23C16/30 ,  C23C16/40 ,  C23C16/44 ,  C23C16/452 ,  H01L21/205

CPC分类号： C23C16/407

摘要： A method for forming a deposited film comprises introducing a gaseous starting material containing In atoms or Sn atoms for formation of a deposited film, a gaseous halogenic oxidizing agent having the property of oxidation action for said starting material and an oxygen-containing gaseous compound into a reaction space to effect chemical contact therebetween to thereby form a plural number of precursors containing a presursor under excited state, and forming a deposited film on a substrate existing in a film forming space with the use of at least one precursor of these precursors as a feeding source for a constituent element of the deposited film.

摘要翻译： 形成沉积膜的方法包括引入含有In原子或Sn原子的气态原料以形成沉积膜，将具有所述原料氧化作用的气态卤素氧化剂和含氧气体化合物引入到 反应空间以在其间进行化学接触从而形成多个在激发态下含有前体的前体，并且使用这些前体的至少一种前体作为进料，在存在于成膜空间中的基底上形成沉积膜 源的沉积膜的构成元素。

公开(公告)号：US4844950A

公开(公告)日：1989-07-04

申请号：US942213

申请日：1986-12-16

申请人： Keishi Saitoh ,  Masaaki Hirooka ,  Jun-ichi Hanna ,  Isamu Shimizu

发明人： Keishi Saitoh ,  Masaaki Hirooka ,  Jun-ichi Hanna ,  Isamu Shimizu

IPC分类号： H01L31/04 ,  C23C16/06 ,  C23C16/30 ,  C23C16/44 ,  H01L21/205

CPC分类号： C23C16/06

摘要： A method for forming a deposited film comprises introducing into a reaction space a gasifiable starting material containing a transition metal element for formation of a deposited film and a gaseous halogenic oxidizing agent having the property of oxidation action for said starting material to effect contact therebetween to thereby chemically form a plural number of precursors including precursors under excited state, and forming a metal deposited film on a substrate existing in the film forming space with the use of at least one precursor of these precursors as the feeding source for the constituent element of the deposited film.

摘要翻译： 形成沉积膜的方法包括向反应空间引入含有用于形成沉积膜的过渡金属元素的可气化起始材料和具有用于所述起始材料的氧化作用的气态卤素氧化剂以在其间进行接触从而 在激发态下化学形成多种前体，包括前体，并且使用这些前体的至少一种前体作为沉积的构成元素的进料源，在存在于成膜空间中的基底上形成金属沉积膜 电影。

公开(公告)号：US5482557A

公开(公告)日：1996-01-09

申请号：US305285

申请日：1994-09-14

申请人： Masahiro Kanai ,  Masaaki Hirooka ,  Jun-ichi Hanna ,  Isamu Shimizu ,  Keishi Saitoh

发明人： Masahiro Kanai ,  Masaaki Hirooka ,  Jun-ichi Hanna ,  Isamu Shimizu ,  Keishi Saitoh

IPC分类号： C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  C23C16/54 ,  G03G5/08 ,  C23C16/00

CPC分类号： C23C16/45563 ,  C23C16/402 ,  C23C16/455 ,  C23C16/54 ,  G03G5/08

摘要： There is disclosed a device for forming a deposited film which forms a deposited film by bringing a gaseous starting material for formation of a deposited film into contact with a gaseous oxidizing agent having the property of oxidation action on said starting material, thereby causing a chemical reaction to occur, comprising a plural number of chambers for formation of a deposited film connected to one another, said chamber having a gas releasing means having an orifice for releasing said gaseous starting material and an orifice for releasing said gaseous oxidizing agent provided respectively on both wall surfaces opposed to each other, and a support setting means which is arranged so that at least a part of its constitution may be included within the plane formed by linking mutually the gas releasing means on the both wall surfaces.

摘要翻译： 公开了一种用于形成沉积膜的装置，其通过使用于形成沉积膜的气态原料与在所述原料上具有氧化作用的气态氧化剂接触形成沉积膜，从而引起化学反应 包括多个用于形成彼此连接的沉积膜的室，所述室具有气体释放装置，其具有用于释放所述气态原料的孔口和用于释放分别设置在两壁上的气态氧化剂的孔口 彼此相对的表面以及支撑设定装置，其布置成使得其结构的至少一部分可以包括在通过两个壁表面上的气体释放装置相互连接形成的平面内。

公开(公告)号：US4837048A

公开(公告)日：1989-06-06

申请号：US920189

申请日：1986-10-17

申请人： Shunichi Ishihara ,  Jun-ichi Hanna ,  Isamu Shimizu

发明人： Shunichi Ishihara ,  Jun-ichi Hanna ,  Isamu Shimizu

IPC分类号： C23C14/14 ,  C23C16/22 ,  C23C16/452 ,  H01L21/205

CPC分类号： H01L21/0237 ,  C23C16/22 ,  C23C16/452 ,  H01L21/02532 ,  H01L21/0262

摘要： A deposited film is formed by introducing a gaseous starting material, a gaseous halogenic oxidizing agent and at least one oxygen or nitrogen type oxidizing agent into a reaction space to form excited precursors and thereafter forming a deposited film on a substrate in a film forming space employing the excited precursors. If desired, a gaseous material containing a component for valence electron control can be added to the reaction space.

摘要翻译： 用于形成沉积膜的方法包括引入用于形成沉积膜的气态原料和具有氧化作用的气态卤素氧化剂（X），所述氧化剂具有氧化作用的原料，至少一种氧化剂（ON）的气态氧 并且优选还包含含有价电子控制剂成分作为成分的气态物质（D）进入反应空间，以使它们之间发生化学接触，从而在激发态下形成含有前体的多种前体， 并且使用这些前体的至少一种前体作为沉积膜的构成元素的进料源，在存在于成膜空间中的基板上形成沉积膜。

公开(公告)号：US5795396A

公开(公告)日：1998-08-18

申请号：US671806

申请日：1996-06-25

申请人： Shunichi Ishihara ,  Jun-ichi Hanna

发明人： Shunichi Ishihara ,  Jun-ichi Hanna

IPC分类号： C30B25/00 ,  C23C16/24 ,  C23C16/44 ,  C23C16/455 ,  C23C16/46 ,  C30B25/02 ,  C30B25/10 ,  C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/24 ,  C23C16/455 ,  C23C16/46 ,  C23C16/463 ,  C30B25/10 ,  C30B25/105 ,  C30B29/06

摘要： An apparatus for forming a deposited film which includes a film forming chamber, with a means to evacuate the inside of the chamber. A substrate holder for holding a substrate is located in the chamber. Starting material gas is supplied to the chamber to enable film formation. A light energy source is also provided to irradiate the substrate in order to heat its surface. The strength of the light energy is controlled to provide a non-uniform temperature distribution pattern on the substrate.

摘要翻译： 一种用于形成沉积膜的装置，其包括一个成膜室，该装置具有抽空该室内部的装置。 用于保持衬底的衬底保持器位于腔室中。 将起始原料气体供应到室以使膜形成。 还提供光能源以照射基板以加热其表面。 控制光能的强度以在衬底上提供不均匀的温度分布图案。

公开(公告)号：US5213997A

公开(公告)日：1993-05-25

申请号：US501484

申请日：1990-03-30

申请人： Shunichi Ishihara ,  Jun-ichi Hanna

发明人： Shunichi Ishihara ,  Jun-ichi Hanna

IPC分类号： C30B25/00 ,  C23C16/24 ,  C23C16/44 ,  C23C16/455 ,  C23C16/46 ,  C30B25/02 ,  C30B25/10

CPC分类号： C23C16/45565 ,  C23C16/24 ,  C23C16/455 ,  C23C16/46 ,  C23C16/463 ,  C30B25/10 ,  C30B25/105 ,  C30B29/06

摘要： A method for forming a crystalline film comprises respectively introducing into a film forming space having a substrate arranged therein a gaseous starting material for formation of the crystalline film and a gaseous halogenic oxidizing agent capable of chemically reacting with the starting material to form the film, the substrate having a surface comprised of a non-single crystal material having a predetermined temperature distribution.

摘要翻译： 一种形成结晶膜的方法包括分别引入具有布置在其中的基板的成膜空间中，用于形成结晶膜的气态原料和能够与原料化学反应以形成膜的气态卤素氧化剂， 基板具有由具有预定温度分布的非单晶材料构成的表面。

公开(公告)号：US5718761A

公开(公告)日：1998-02-17

申请号：US635214

申请日：1996-04-17

申请人： Hiroyuki Tokunaga ,  Jun-ichi Hanna ,  Isamu Shimizu

发明人： Hiroyuki Tokunaga ,  Jun-ichi Hanna ,  Isamu Shimizu

IPC分类号： C30B25/02 ,  C30B25/18 ,  H01L21/36 ,  H01L21/365 ,  C03B25/04

CPC分类号： C30B25/02 ,  C30B25/18 ,  C30B29/48 ,  H01L21/02422 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  Y10S117/913

摘要： A method of forming a crystalline compound semiconductor film comprises introducing into a crystal forming space housing a substrate on which a non-nucleation surface (S.sub.NDS) having a smaller nucleation density and a nucleation surface (S.sub.NDL) having a fine surface area sufficient for crystal growth only from a single nucleus and having a larger nucleation density (ND.sub.L) than the nucleation density (NDs) of the non-nucleation surface (S.sub.NDS) are arranged adjacent to each other an organometallic compound (VI) for supplying an element belonging to the group VI of Periodic Table represented by the general formula R.sub.1 --X.sub.n --R.sub.2 wherein n is an integer of 2 or more; R.sub.1 and R.sub.2 each represent alkyl; and X is S, Se or Te and a compound (II) for supplying an element belonging to the group II of Periodic Table in gas phase and applying crystal growth treatment according to the vapor phase method to the substrate to selectively form a crystalline group II-VI compound semiconductor film on the substrate.

摘要翻译： 形成结晶化合物半导体膜的方法包括引入晶体形成空间，该晶体形成空间容纳其中具有较小成核密度的非成核表面（SNDS）和具有足够晶体生长的微细表面积的成核表面（SNDL）的基底 只有来自单个核并且具有比非成核表面（SNDS）的成核密度（NDs）更大的成核密度（NDL）的相对于彼此相邻的用于提供属于该组的元素的有机金属化合物（VI） VI为通式R 1 -Xn-R 2表示的周期表，其中n为2以上的整数; R1和R2各自表示烷基; X是S，Se或Te，以及用于在气相中提供属于元素周期表II族的元素的化合物（II），并将根据气相法的晶体生长处理施加到基板上以选择性地形成晶体组II -VI化合物半导体膜。

公开(公告)号：US07638795B2

公开(公告)日：2009-12-29

申请号：US11390667

申请日：2006-03-28

申请人： Jun-ichi Hanna ,  Hiroki Maeda ,  Masanori Akada

发明人： Jun-ichi Hanna ,  Hiroki Maeda ,  Masanori Akada

IPC分类号： H01L35/24 ,  H01L51/40

CPC分类号： H01L51/0076 ,  H01L51/0012 ,  H01L51/0052 ,  H01L51/0054 ,  H01L51/0055 ,  H01L51/0058 ,  H01L51/0062 ,  H01L51/0064 ,  H01L51/0067 ,  H01L51/0068 ,  H01L51/0069 ,  H01L51/0071 ,  H01L51/0545 ,  H01L51/0558 ,  H01L51/057 ,  Y02E10/549 ,  Y02P70/521

摘要： There are provided an organic semiconductor structure comprising an organic semiconductor layer, which is large in size and homogeneous and has high charge transfer characteristics, a process for producing the same, and an organic semiconductor device. The organic semiconductor structure has, in at least a part thereof, an organic semiconductor layer comprising an aligned liquid crystalline organic semiconductor material. The liquid crystalline organic semiconductor material comprises an organic compound having a core comprising L 6π electron rings, M 8π electron rings, N 10π electron rings, O 12π electron rings, P 14π electron rings, Q 16π electron rings, R 18π electron rings, S 20π electron rings, T 22π electron rings, U 24π electron rings, and V 26π electron rings, wherein L, M, N, O, P, Q, R, S, T, U, and V are each an integer of 0 (zero) to 6 and L+M+N+O+P+Q+R+S+T+U+V=1 to 6. The liquid crystalline organic semiconductor material exhibits at least one liquid crystal state at a temperature below the heat decomposition temperature thereof.

摘要翻译： 提供了一种有机半导体结构，其包括尺寸大且均匀且具有高电荷转移特性的有机半导体层，其制造方法和有机半导体器件。 有机半导体结构在其至少一部分中具有包括取向的液晶有机半导体材料的有机半导体层。 液晶有机半导体材料包括具有芯的有机化合物，其包括L 6pi电子环，M 8pi电子环，N 10pi电子环，O 12pi电子环，P 14pi电子环，Q 16pi电子环，R 18pi电子环，S 20pi电子环，T 22pi电子环，U 24pi电子环和V 26pi电子环，其中L，M，N，O，P，Q，R，S，T，U和V各自为0的整数 零）至6和L + M + N + O + P + Q + R + S + T + U + V = 1至6.液晶有机半导体材料在低于热的温度下显示至少一种液晶态 分解温度。

公开(公告)号：US20060231832A1

公开(公告)日：2006-10-19

申请号：US11370779

申请日：2006-03-08

申请人： Keiji Tokunaga ,  Yudai Yamashita ,  Jun-ichi Hanna

发明人： Keiji Tokunaga ,  Yudai Yamashita ,  Jun-ichi Hanna

IPC分类号： H01L29/08

CPC分类号： H01L51/0076 ,  C07D277/66 ,  C09K19/3477 ,  C09K19/3497 ,  C09K19/40 ,  C09K2019/3408 ,  H01L51/0069 ,  H01L51/0545

摘要： A liquid crystalline organic compound which gives a liquid crystal phase in a temperature range containing at least a room temperature and can exhibit a high charge mobility; an organic semiconductor structure and an organic semiconductor device each having the liquid crystalline organic compound are provided. The liquid crystalline organic compound contains any one of benzothiazole, benzoselenazole, benzoxazole and indene skeletons represented by the following chemical formula 1: wherein A is a nitrogen atom or a CH group, and B is a sulfur, selenium or oxygen atom is contained as Z1 in the following chemical formula 2: R1-Y1-Z1-Y2-R2   2 wherein, R1 and R2 are each independently a saturated or unsaturated hydrocarbon of a straight chain, a branched chain or a cyclic structure having 1 to 22 carbon atoms; R1 and R2 may be each independently bonded directly to Z1 without interposing Y1 or Y2 therebetween; and Y1 and Y2 are each independently selected from the group consisting of oxygen and selenium atoms and —CO—, —OCO—, —COO—, —N═CH—, —CONH—, —NH—, —NHCOO and —CH2 groups.

摘要翻译： 一种液晶有机化合物，其在至少包含室温的温度范围内产生液晶相，并且可表现出高的电荷迁移率; 提供了具有液晶有机化合物的有机半导体结构和有机半导体器件。 液晶性有机化合物含有以下化学式1表示的苯并噻唑，苯并硒唑，苯并恶唑和茚骨架中的任一种：其中A为氮原子或CH基团，B为硫，硒或氧原子为Z1 在以下化学式2中：<？in-line-formula description =“In-line formula”end =“lead”？> R1-Y1-Z1-Y2-R2 2 <？in-line-formula description =“In 其中，R 1和R 2各自独立地为具有1至22个碳原子的直链，支链或环状结构的饱和或不饱和烃; R1和R2可以各自独立地键合到Z1而不插入Y1或Y2; 并且Y 1和Y 2各自独立地选自氧和硒原子和-CO - ， - OCO - ， - COO - ， - N-CH - ， - CONH - ， - NH - ， - NHCOO和-CH SUB> 2 组。