公开(公告)号：US5606180A

公开(公告)日：1997-02-25

申请号：US299994

申请日：1994-09-01

申请人： Nobuyuki Hosoi ,  Kenji Shimoyama ,  Hideki Goto

发明人： Nobuyuki Hosoi ,  Kenji Shimoyama ,  Hideki Goto

IPC分类号： C30B25/02 ,  H01L29/205 ,  H01L33/30 ,  H01S5/323 ,  H01L27/15 ,  H01L31/12 ,  H01L33/00

CPC分类号： H01L33/30 ,  C30B25/02 ,  C30B29/40 ,  H01L29/205 ,  H01S5/32325

摘要： The invention includes a Group III-V compound semiconductor that comprises (1) a thin crystal film of A.sub.1.sup.III As.sub.w P.sub.1-w, wherein A.sub.1.sup.III represents a Group III element with Al composition of less than 0.3, 0.5

摘要翻译： 本发明包括III-V族化合物半导体，其包括（1）AlIIIAswP1-w的薄晶膜，其中AlIII表示Al组成小于0.3，0.5 的III族元素 在基板上，形成BIIIAs的薄晶膜，其中BIII表示在A2IIIAsuP1-u膜上形成的Al组成不小于0.45的III族元素，以及C2IIIAszP1-z的薄膜，其中C2III表示III族 元素，0 ，形成在BIIIAs膜上。

公开(公告)号：US06807213B1

公开(公告)日：2004-10-19

申请号：US09511188

申请日：2000-02-23

申请人： Kenji Shimoyama ,  Nobuyuki Hosoi ,  Kazumasa Kiyomi ,  Yoshihito Sato ,  Satosi Kikuchi

发明人： Kenji Shimoyama ,  Nobuyuki Hosoi ,  Kazumasa Kiyomi ,  Yoshihito Sato ,  Satosi Kikuchi

IPC分类号： H01S500

CPC分类号： H01S5/2231 ,  H01L33/02 ,  H01L33/24 ,  H01S5/1014 ,  H01S5/1064 ,  H01S5/50 ,  H01S2301/18

摘要： This application discloses a semiconductor optical device apparatus having on a substrate, at least, a compound semiconductor layer containing an active layer, a protection film having a stripe-shaped opening formed on the compound semiconductor layer, and a ridge type compound semiconductor layer formed as to cover the stripe-shaped opening having a smaller refractive index than the refractive index of the active layer, has a feature that a width (WC) at an opening center of the stripe-shaped opening is different from either or both of a width (WF) of the opening front end and a width (WR) of the opening rear end. According to the invention, a semiconductor optical device apparatus capable of operating with a high output, and a semiconductor optical device apparatus having a small beam spot diameter, and the like can be manufactured where the width of the stripe-shaped opening is properly controlled.

摘要翻译： 本申请公开了一种半导体光学器件装置，在至少具有含有活性层的化合物半导体层，在化合物半导体层上形成有条状开口的保护膜，以及形成为 为了覆盖具有比有源层的折射率小的折射率的条形开口，具有条形开口的开口中心处的宽度（WC）不同于宽度（ WF）和开口后端的宽度（WR）。 根据本发明，可以制造能够适当地控制条形开口的宽度的能够以高输出操作的半导体光学装置装置和具有小的光斑直径的半导体光学装置装置等。

公开(公告)号：US5619518A

公开(公告)日：1997-04-08

申请号：US363261

申请日：1994-12-23

申请人： Hideyoshi Horie ,  Yuichi Inoue ,  Kenji Shimoyama ,  Nobuyuki Hosoi ,  Goto Hideki

发明人： Hideyoshi Horie ,  Yuichi Inoue ,  Kenji Shimoyama ,  Nobuyuki Hosoi ,  Goto Hideki

IPC分类号： H01L33/06 ,  H01L33/14 ,  H01L33/30 ,  H01L33/40 ,  H01S5/00 ,  H01S5/20 ,  H01S5/22 ,  H01S5/227 ,  H01S5/32 ,  H01S3/19

CPC分类号： H01S5/20 ,  H01S5/2004 ,  H01S5/204 ,  H01S5/2206 ,  H01S5/2275 ,  H01S5/3211 ,  H01S5/3216

摘要： The disclosure described a semiconductor laser diode comprising at least a first clad layer, an active layer and a second clad layer disposed in this order on the substrate, anda buried layer for current blocking disposed at both sides in the cavity direction of the active layer,at least one of the first clad layer and second clad layer having at least one superlattice in the direction parallel with the substrate, and the average refractive index (nc1) of the first clad layer, the refractive index (na) of the active layer and the average refractive index (nc2) of the second clad layer satisfying the following equations.na>nc1 (1)na>nc2 (2)

摘要翻译： 本公开描述了一种半导体激光二极管，其包括至少第一覆盖层，有源层和第二覆盖层，其依次布置在衬底上，以及用于电流阻挡的掩埋层，设置在有源层的空腔方向的两侧 所述第一覆盖层和所述第二覆盖层中的至少一个在与所述基板平行的方向上具有至少一个超晶格，并且所述第一覆盖层的平均折射率（nc1），所述有源层的折射率（na） 和第二包层的平均折射率（nc2）满足以下等式。 na> nc1（1）na> nc2（2）

公开(公告)号：US06387721B1

公开(公告)日：2002-05-14

申请号：US09404376

申请日：1999-09-24

申请人： Makiko Hashimoto ,  Nobuyuki Hosoi ,  Kenji Shimoyama ,  Katsushi Fujii ,  Yoshihito Sato ,  Kazumasa Kiyomi

发明人： Makiko Hashimoto ,  Nobuyuki Hosoi ,  Kenji Shimoyama ,  Katsushi Fujii ,  Yoshihito Sato ,  Kazumasa Kiyomi

IPC分类号： H01L2100

CPC分类号： H01S5/2231 ,  H01S5/0202 ,  H01S5/0658 ,  H01S5/2272 ,  H01S5/3213

摘要： In a semiconductor light-emitting device including a substrate, a first compound semiconductor layer including an active layer formed on the substrate, a second compound semiconductor layer of a ridge type formed on the first compound semiconductor layer, and a protective film formed above the first compound semiconductor layer on both sides of the second compound semiconductor layer, the disclosed semiconductor light-emitting device has a current blocking layer formed above the first compound semiconductor layer outside the protective film. This semiconductor light-emitting device is with a high production yield since readily cleaved and assembled, with adequately squeezed currents, and with, when assembled in the junction-down type, a high output and a longer life span.

摘要翻译： 在包括衬底的半导体发光器件中，包括形成在衬底上的有源层的第一化合物半导体层，形成在第一化合物半导体层上的脊状的第二化合物半导体层和形成在第一化合物半导体层上的保护膜 化合物半导体层在第二化合物半导体层的两侧，所公开的半导体发光器件具有形成在保护膜外部的第一化合物半导体层上方的电流阻挡层。 这种半导体发光器件由于容易地被切割和组装而具有高的产量，具有适当的挤压电流，并且当在结合型组装时具有高输出和更长的寿命。

公开(公告)号：US5811839A

公开(公告)日：1998-09-22

申请号：US521980

申请日：1995-08-31

申请人： Kenji Shimoyama ,  Nobuyuki Hosoi ,  Katsushi Fujii ,  Atsunori Yamauchi ,  Hideki Gotoh ,  Yoshihito Sato

发明人： Kenji Shimoyama ,  Nobuyuki Hosoi ,  Katsushi Fujii ,  Atsunori Yamauchi ,  Hideki Gotoh ,  Yoshihito Sato

IPC分类号： H01L33/30 ,  H01S5/32 ,  H01S5/323 ,  H01L33/00 ,  H01S3/19

CPC分类号： H01L33/30 ,  H01S5/32325 ,  H01S5/3211

摘要： The present invention provides a semiconductor light-emitting device including a first clad layer comprising a first conductive type of AlGaAsP compound, a second clad layer that is located next to the first clad layer, comprises a first conductive type of AlGaInP compound and has a thickness of up to 0.5 .mu.m, an active layer that is located next to the second clad layer and comprises a first or second conductive type AlGaInP or GaInP, a third clad layer that is located next to the active layer, comprises a second conductive type of AlGaInP compound and has a thickness of up to 0.5 .mu.m, and a fourth clad layer that is located next to the third clad layer and comprises a second conductive type of AlGaAsP compound, and/or a light-extracting layer that comprises a second conductive type AlGaP or GaP and has a thickness of 1 .mu.m to 100 .mu.m.

摘要翻译： 本发明提供一种半导体发光器件，包括：第一覆盖层，包括第一导电类型的AlGaAsP化合物，位于第一覆盖层旁边的第二覆盖层，包括第一导电型AlGaInP化合物， 高达0.5μm的有源层，位于第二覆层旁边并且包括第一或第二导电型AlGaInP或GaInP，位于有源层旁边的第三覆盖层包括第二导电类型 AlGaInP化合物，并且具有至多0.5μm的厚度，以及位于第三覆盖层旁边并包括第二导电型AlGaAsP化合物的第四覆盖层和/或包含第二导电类型的光提取层 型AlGaP或GaP，并且具有1μm至100μm的厚度。

公开(公告)号：US06278137B1

公开(公告)日：2001-08-21

申请号：US09035333

申请日：1998-03-05

申请人： Kenji Shimoyama ,  Nobuyuki Hosoi ,  Katsushi Fujii ,  Atsunori Yamauchi ,  Hideki Gotoh ,  Yoshihito Sato

发明人： Kenji Shimoyama ,  Nobuyuki Hosoi ,  Katsushi Fujii ,  Atsunori Yamauchi ,  Hideki Gotoh ,  Yoshihito Sato

IPC分类号： H01L3300

CPC分类号： H01L33/30 ,  H01S5/3211 ,  H01S5/32325

摘要： The present invention provides a semiconductor light-emitting device including a first clad layer comprising a first conductive type of AlGaAsP compound, a second clad layer that is located next to the first clad layer, comprises a first conductive type of AlGaInP compound and has a thickness of up to 0.5 &mgr;m, an active layer that is located next to the second clad layer and comprises a first or second conductive type AlGaInP or GaInP, a third clad layer that is located next to the active layer, comprises a second conductive type of AlGaInP compound and has a thickness of up to 0.5 &mgr;m, and a fourth clad layer that is located next to the third clad layer and comprises a second conductive type of AlGaAsP compound, and/or a light-extracting layer that comprises a second conductive type AlGaP or GaP and has a thickness of 1 &mgr;m to 100 &mgr;m.

摘要翻译： 本发明提供一种半导体发光器件，包括：第一覆盖层，包括第一导电类型的AlGaAsP化合物，位于第一覆盖层旁边的第二覆盖层，包括第一导电型AlGaInP化合物， 高达0.5μm的有源层，位于第二覆盖层的旁边并且包括第一或第二导电型AlGaInP或GaInP，位于有源层旁边的第三覆盖层包括第二导电类型的AlGaInP 并且具有高达0.5μm的厚度，以及位于第三覆盖层旁边并且包括第二导电型AlGaAsP化合物的第四覆盖层和/或包含第二导电型AlGaP的光提取层 或GaP，并且具有1μm至100μm的厚度。

公开(公告)号：US06707071B2

公开(公告)日：2004-03-16

申请号：US10096508

申请日：2002-03-13

申请人： Makiko Hashimoto ,  Nobuyuki Hosoi ,  Kenji Shimoyama ,  Katsushi Fujii ,  Yoshihito Sato ,  Kazumasa Kiyomi

发明人： Makiko Hashimoto ,  Nobuyuki Hosoi ,  Kenji Shimoyama ,  Katsushi Fujii ,  Yoshihito Sato ,  Kazumasa Kiyomi

IPC分类号： H01L3300

CPC分类号： H01S5/2231 ,  H01S5/0202 ,  H01S5/0658 ,  H01S5/2272 ,  H01S5/3213

摘要： In a semiconductor light-emitting device including a substrate, a first compound semiconductor layer including an active layer formed on the substrate, a second compound semiconductor layer of a ridge type formed on the first compound semiconductor layer, and a protective film formed above the first compound semiconductor layer on both sides of the second compound semiconductor layer, the disclosed semiconductor light-emitting device has a current blocking layer formed above the first compound semiconductor layer outside the protective film. This semiconductor light-emitting device is with a high production yield since readily cleaved and assembled, with adequately squeezed currents, and with, when assembled in the junction-down type, a high output and a longer life span.

摘要翻译： 在包括衬底的半导体发光器件中，包括形成在衬底上的有源层的第一化合物半导体层，形成在第一化合物半导体层上的脊状的第二化合物半导体层和形成在第一化合物半导体层上的保护膜 化合物半导体层在第二化合物半导体层的两侧，所公开的半导体发光器件具有形成在保护膜外部的第一化合物半导体层上方的电流阻挡层。 这种半导体发光器件由于容易地被切割和组装而具有高的产量，具有适当的挤压电流，并且当在结合型组装时具有高输出和更长的寿命。

公开(公告)号：US06639926B1

公开(公告)日：2003-10-28

申请号：US09274767

申请日：1999-03-24

申请人： Kenji Shimoyama ,  Satoru Nagao ,  Katsushi Fujii ,  Hideki Goto

发明人： Kenji Shimoyama ,  Satoru Nagao ,  Katsushi Fujii ,  Hideki Goto

IPC分类号： H01S500

CPC分类号： B82Y20/00 ,  H01S5/0658 ,  H01S5/2231 ,  H01S5/2272 ,  H01S5/3202 ,  H01S5/3206 ,  H01S5/34326

摘要： A semiconductor light-emitting device comprising a substrate having a surface having an off-angle to a crystallographic plane of low-degree surface orientation, the substrate having thereon: compound semiconductor layers including an active layer; a selective growth protective film formed on the compound semiconductor layers and having an opening at the region corresponding to a stripe region to which a current is injected; and a ridge-shaped compound semiconductor layer formed to cover the opening. This semiconductor light-emitting device with stable laser property can be manufactured in a simplified way.

摘要翻译： 一种半导体发光器件，包括具有与低度表面取向的结晶面偏离的表面的基板，所述基板上具有：包含有源层的化合物半导体层; 在所述化合物半导体层上形成的选择性生长保护膜，并且在与注入电流的条纹区域对应的区域具有开口部; 以及形成为覆盖开口的脊状化合物半导体层。 这种具有稳定的激光特性的半导体发光器件可以简单地制造。

公开(公告)号：US5355384A

公开(公告)日：1994-10-11

申请号：US128579

申请日：1993-09-29

申请人： Yuichi Inoue ,  Kenji Shimoyama ,  Itaru Sakamoto ,  Hideki Goto

发明人： Yuichi Inoue ,  Kenji Shimoyama ,  Itaru Sakamoto ,  Hideki Goto

IPC分类号： H01S5/00 ,  H01S3/11 ,  H01S5/20 ,  H01S5/223 ,  H01S5/227 ,  H01S3/19

CPC分类号： H01S5/227 ,  H01S5/20 ,  H01S5/2004 ,  H01S5/2081 ,  H01S5/223 ,  H01S5/2275

摘要： Disclosed herein is a semiconductor laser element comprising a first cladding layer, an optical guiding layer, an active layer and a second cladding layer disposed in this order or in reverse order on a semiconductor substrate, a refractive index of the optical guiding layer being larger than both refractive indexes of the first and second cladding layers, and a refractive index of the optical guiding layer is smaller than that of the active layer but larger than that of the first cladding layer, and a burying layer having a refractive index smaller than that of at least one of the first and second cladding layers being disposed on side faces other than laser-emitting faces of the optical guiding layer and the active layer.

摘要翻译： 本发明公开了一种半导体激光器元件，其包括在半导体基板上以该顺序或相反次序设置的第一包层，光导层，有源层和第二包层，光导层的折射率大于 第一和第二包覆层的折射率以及光导层的折射率都小于有源层的折射率，但是比第一覆盖层的折射率大，但是比第一覆盖层的折射率小的折射率的掩埋层， 第一和第二包层中的至少一个设置在除了光导层和有源层的激光发射面以外的侧面上。

公开(公告)号：US6023483A

公开(公告)日：2000-02-08

申请号：US48183

申请日：1998-03-26

申请人： Kenji Shimoyama ,  Katsushi Fujii ,  Satoru Nagao ,  Hideki Goto

发明人： Kenji Shimoyama ,  Katsushi Fujii ,  Satoru Nagao ,  Hideki Goto

IPC分类号： H01S5/223 ,  H01S3/19

CPC分类号： H01S5/2231 ,  H01S5/223

摘要： A semiconductor light-emitting device comprising a substrate having thereon: a first conductive type first clad layer; an active layer; a second conductive type first clad layer having a stripe region to which a current is injected and the remaining region; a ridge portion comprising: a ridge-shape second conductive type second clad layer formed on the stripe region of the second conductive type first clad layer; a second conductive type contact layer formed on the ridge-shape second conductive type second clad layer; and a protective film formed on the second conductive type first clad layer to cover the remaining region thereof, wherein a part of the second conductive type second clad layer is formed on said protective film, or wherein said contact layer is formed on a substantially whole surface area of said second conductive type second clad layer, or wherein said ridge portion has no protective layer on the side surface thereof.

摘要翻译： 一种半导体发光器件，包括其上具有的衬底：第一导电型第一覆盖层; 活性层 第二导电型第一包层，其具有注入电流的条带区域和剩余区域; 脊部，包括：形成在所述第二导电型第一包层的条带区域上的脊形第二导电型第二包层; 形成在所述脊状第二导电型第二包覆层上的第二导电型接触层; 以及形成在所述第二导电型第一覆盖层上以覆盖其剩余区域的保护膜，其中所述第二导电型第二覆盖层的一部分形成在所述保护膜上，或者其中所述接触层形成在基本上整个表面上 所述第二导电型第二包覆层的面积，或者其中所述脊部在其侧表面上没有保护层。