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16 条记录 (耗时 0.012 秒)

    Method for identifying surface atoms of solid sample and apparatus therefor
    1.
    发明授权
    Method for identifying surface atoms of solid sample and apparatus therefor 失效
    确定固体样品表面原子的方法及其设备

    公开(公告)号：US5635716A

    公开(公告)日：1997-06-03

    申请号：US614678

    申请日：1996-03-13

    申请人： Ziyuan Liu ,  Tadataka Morishita

    发明人： Ziyuan Liu ,  Tadataka Morishita

    IPC分类号： G01N23/20 ,  G01N23/225 ,  H01J37/252 ,  H01J37/26

    CPC分类号： G01N23/2251 ,  H01J37/252 ,  H01J2237/255 ,  H01J2237/2561

    摘要： The atoms constituting a surface of a solid sample are identified by first forming, on the surface, island-like deposits of a substance capable of generating fluorescent X-rays upon being energized by an electron beam. The deposits are then energized with the electron beam so that fluorescent X-rays are emitted therefrom and reflected on the surface. From the critical angle for total reflection of the fluorescent X-rays reflected on that portion of the surface of the sample on which no deposits are present, the atoms constituting the surface may be determined. An apparatus for carrying out the above method is also disclosed which is a modification of the conventional RHEED/TRAXS device.

    摘要翻译： 通过首先在表面上形成能够通过电子束激发能够产生荧光X射线的物质的岛状沉积物来识别构成固体样品表面的原子。 然后用电子束使沉积物通电，使得荧光X射线从其发射并在表面上反射。 从在没有沉积物的样品表面部分上反射的荧光X射线的全反射的临界角度，可以确定构成表面的原子。 还公开了用于执行上述方法的装置，其是常规RHEED / TRAXS装置的修改。

    Apparatus for producing oxide thin film
    3.
    发明授权
    Apparatus for producing oxide thin film 失效
    氧化物薄膜的制造装置

    公开(公告)号：US5421890A

    公开(公告)日：1995-06-06

    申请号：US98903

    申请日：1993-07-29

    申请人： Ryusuke Kita ,  Takashi Hase ,  Masato Sasaki ,  Tadataka Morishita

    发明人： Ryusuke Kita ,  Takashi Hase ,  Masato Sasaki ,  Tadataka Morishita

    IPC分类号： C23C8/12 ,  C04B41/50 ,  C04B41/85 ,  C04B41/87 ,  C23C8/16 ,  C23C14/08 ,  C23C14/24 ,  C23C14/58 ,  C30B23/02 ,  C23C16/40

    CPC分类号： C04B41/009 ,  C04B41/5027 ,  C04B41/5072 ,  C04B41/85 ,  C04B41/87 ,  C23C14/08 ,  C23C14/24 ,  C30B23/002 ,  C30B23/02 ,  C30B29/16 ,  C30B29/22

    摘要： Disclosed is an oxide thin film producing method and apparatus for producing an oxide thin film having excellent crystallinity and purity with high productivity while correctly controlling the composition of the oxide thin film. After reducing the pressure inside a vacuum chamber to 1.times.10.sup.-9 Torr or less, a metal thin film is formed by evaporating a specified metal element and depositing vapor of the metal element on a substrate in the vacuum chamber. Then a cover member is moved upward to closely abut to a cover receiving member to thereby form an airtight chamber for enclosing the substrate airtightly in the vacuum chamber. With the degree of vacuum around the airtight chamber maintained, O.sub.2 gas is directly introduced into the airtight chamber through a gas piping to oxidize the metal thin film and thereby form an oxide thin film. At the same time, the gas inside the airtight chamber is discharged directly out of the vacuum chamber through a gas piping.

    摘要翻译： 公开了一种用于在正确控制氧化物薄膜的组成的同时以高生产率制造具有优异的结晶度和纯度的氧化物薄膜的氧化物薄膜制造方法和装置。 在将真空室内的压力降低到1×10 -9 Torr或更小之后，通过蒸发特定的金属元素并将金属元素的蒸气沉积在真空室中的基底上来形成金属薄膜。 然后，盖构件向上移动以紧密地邻接到盖接收构件，从而形成用于将基底气密地封闭在真空室中的气密室。 随着保持气密室周围的真空度，通过气体管道将O2气体直接引入气密室，以氧化金属薄膜，从而形成氧化物薄膜。 同时，气密室内的气体通过气体管道直接排出真空室外。

    Process for preparing single crystal material and composite material for forming such single crystal material
    8.
    发明授权
    Process for preparing single crystal material and composite material for forming such single crystal material 失效
    制备单晶材料的方法和用于形成这种单晶材料的复合材料

    公开(公告)号：US5837053A

    公开(公告)日：1998-11-17

    申请号：US563383

    申请日：1995-11-28

    申请人： Furen Wang ,  Tadataka Morishita

    发明人： Furen Wang ,  Tadataka Morishita

    IPC分类号： C30B1/02 ,  C30B29/22 ,  H01L21/205

    CPC分类号： C30B1/02 ,  C30B29/32

    摘要： A single crystal material is prepared by forming a layer of an amorphous substance over a surface of a substrate of a single crystal having the same chemical composition as that of the amorphous substance, the resulting composite material is heated to epitaxially grow the amorphous layer into a single crystal layer. A composite material for producing such a single crystal material is also disclosed which includes a substrate of a single crystal, and a layer of an amorphous substance having the same chemical composition as that of the substrate, the layer having such a thickness that the layer as a whole can epitaxially grow to make a single crystal layer.

    摘要翻译： 通过在具有与非晶物质相同的化学组成的单晶的衬底的表面上形成无定形物质层来制备单晶材料，将所得的复合材料加热以将非晶层外延生长成为 单晶层。 还公开了一种用于制造这种单晶材料的复合材料，其包括单晶衬底和与衬底具有相同化学组成的无定形物质层，该层具有如下层的厚度： 整体可以外延生长以制成单晶层。

    Process for forming a semiconductive thin film containing a junction
    9.
    发明授权
    Process for forming a semiconductive thin film containing a junction 失效
    用于形成含有结的半导体薄膜的工艺

    公开(公告)号：US5747427A

    公开(公告)日：1998-05-05

    申请号：US638286

    申请日：1996-04-26

    申请人： Norio Homma ,  Tadataka Morishita

    发明人： Norio Homma ,  Tadataka Morishita

    IPC分类号： H01L39/22 ,  H01L39/24 ,  C23C14/34

    CPC分类号： H01L39/225 ,  H01L39/2496

    摘要： Disclosed is a method of forming a thin junction film including a first thin oxide flilm presenting a superconductivity and second thin oxide film presenting an insulator properties or possibly semiconductive properties with an improved production efficiency as well as improved film quality and characteristics. Employed are first and second targets each having substantially the same chemical composition excepting oxygen content. The first target is sputtered at a target cathode voltage of minus 100 V by the use of voltage derived from an external D.C. voltage source, thereby forming a first thin oxide film. Subsequently, the target is changed over to the second target while changing the target cathode voltage into self-bias voltage of minus 50 V without any change of the other film formation conditions. Through this change-over, the sputtering of the first target is successively followed by the sputtering of the second target without any interruption of time, to consequently form the second thin oxide film onto the first thin oxide film.

    摘要翻译： 公开了一种形成薄接合膜的方法，该薄接合膜包括具有超导性的第一薄氧化物薄膜和具有提高的生产效率以及改进的薄膜质量和特性的具有绝缘体性质或可能的半导体性质的第二薄氧化物薄膜。 使用的是除了氧含量之外具有基本上相同的化学组成的第一和第二靶。 通过使用从外部直流电压源得到的电压，将第一靶溅射在负100V的目标阴极电压，从而形成第一薄氧化膜。 随后，在将目标阴极电压改变为负50V的自偏压的同时将目标切换到第二目标，而不会改变其它成膜条件。 通过这种转换，第一靶的溅射依次是第二靶的溅射而不时间的中断，从而在第一薄氧化膜上形成第二薄氧化膜。

    Production method of oxide superconductive film
    10.
    发明授权
    Production method of oxide superconductive film 失效
    氧化物超导膜的制造方法

    公开(公告)号：US6008162A

    公开(公告)日：1999-12-28

    申请号：US50351

    申请日：1998-03-31

    申请人： Sadahiko Miura ,  Tadataka Morishita ,  Youichi Enomoto

    发明人： Sadahiko Miura ,  Tadataka Morishita ,  Youichi Enomoto

    IPC分类号： C30B19/02 ,  H01L39/24 ,  C30B19/00

    CPC分类号： H01L39/2422 ,  C30B19/02 ,  Y10S505/729 ,  Y10S505/733

    摘要： The present invention can provide an oxide superconductive film with a smooth surface and at homogeneous thickness on a simple substrate structure at a high film formation rate. In a liquid phase epitaxial growth method for producing an ReBa.sub.2 Cu.sub.3 Ox film (3) (Rerepresents one selected from lanthanoids such as Y and Nd, and X represents the oxygen amount) having a 123 type crystal structure from a molten liquid (1), a substrate (2) surface is inclined by 1 degree to 44 degrees with respect to the molten liquid surface at the time of separating the film from the molten liquid after film formation. After separating the film from the molten liquid, the substrate is rotated at 300 rpm to 3000 rpm for 5 seconds to 5 minutes. The film formation atmosphere contains 2 at. % of oxygen and 98 at. % of nitrogen, and the film formation temperature is 900 to 970.degree. C.

    摘要翻译： 本发明可以以高成膜速度在简单的衬底结构上提供具有光滑表面和均匀厚度的氧化物超导膜。 在熔融液体（1）中制备具有123型晶体结构的ReBa2Cu3Ox膜（3）（Rerepresented选自镧系元素，例如Y和Nd，X表示氧量）的液相外延生长方法中， （2）表面在成膜后从熔融液体中分离膜时相对于熔融液体表面倾斜1度至44度。 在将膜从熔融液体中分离后，将基板以300rpm旋转至3000rpm 5秒钟至5分钟。 成膜气氛含有2个。 氧气百分比为98。 的氮气，成膜温度为900〜970℃。