Abstract:
An optoelectronic component is specified. According to at least one embodiment of the invention, the optoelectronic component comprises a housing (20) and a radiation-emitting or radiation-receiving semiconductor chip (10) arranged in the housing (20). Furthermore, the component comprises an optical element (50), which contains a polymer material comprising a silicone. The silicone contains at least 40% by weight of cyclic siloxanes, and at least 40% of the silicon atoms of the cyclic siloxanes are crosslinked with a further silicon atom of the silicon via alkylene and/or alkylarylene groups.
Abstract:
An optoelectronic component is specified. According to at least one embodiment of the invention, the optoelectronic component comprises a housing (20) and a radiation-emitting or radiation-receiving semiconductor chip (10) arranged in the housing (20). Furthermore, the component comprises an optical element (50), which contains a polymer material comprising a silicone. The silicone contains at least 40% by weight of cyclic siloxanes, and at least 40% of the silicon atoms of the cyclic siloxanes are crosslinked with a further silicon atom of the silicon via alkylene and/or alkylarylene groups.
Abstract:
A radiation-emitting component includes a radiation source; a transparent material disposed in the beam path of the component and including a polymer material and filler particles, wherein the filler particles include an inorganic filler material and a phosphonic acid derivative or phosphoric acid derivative attached to a surface thereof and through which the filler particles are crosslinked with the polymer material.
Abstract:
A method for producing an optoelectronic device and an optoelectronic device is disclosed. According to at least one embodiment, an optoelectronic device is provided, which comprises a housing, a radiation-emitting or radiation-receiving semiconductor chip which is arranged in the housing, and an optical element which is arranged in a beam path of the device. The optical element comprises an amphiphilic block copolymer which contains polysiloxane as a hydrophobic polymer and a hydrophilic polymer cross-linked therewith. The optical element further comprises thermally conductive nanoparticles which are distributed in the amphiphilic block copolymer and comprise a material which is selected from the group comprising a metal, a metal oxide, a metal hydroxide and a combination thereof.
Abstract:
A method for producing an optoelectronic device and an optoelectronic device is disclosed. According to at least one embodiment, an optoelectronic device is provided, which comprises a housing, a radiation-emitting or radiation-receiving semiconductor chip which is arranged in the housing, and an optical element which is arranged in a beam path of the device. The optical element comprises an amphiphilic block copolymer which contains polysiloxane as a hydrophobic polymer and a hydrophilic polymer cross-linked therewith. The optical element further comprises thermally conductive nanoparticles which are distributed in the amphiphilic block copolymer and comprise a material which is selected from the group comprising a metal, a metal oxide, a metal hydroxide and a combination thereof.
Abstract:
A radiation-emitting component includes a radiation source; a transparent material disposed in the beam path of the component and including a polymer material and filler particles, wherein the filler particles include an inorganic filler material and a phosphonic acid derivative or phosphoric acid derivative attached to a surface thereof and through which the filler particles are crosslinked with the polymer material.