公开(公告)号：US07141507B2

公开(公告)日：2006-11-28

申请号：US11065342

申请日：2005-02-25

申请人： Oliver Genz ,  Markus Kirchhoff ,  Stephan Machill ,  Alexander Reb ,  Barbara Schmidt ,  Momtchil Stavrev ,  Maik Stegemann ,  Stephan Wege

发明人： Oliver Genz ,  Markus Kirchhoff ,  Stephan Machill ,  Alexander Reb ,  Barbara Schmidt ,  Momtchil Stavrev ,  Maik Stegemann ,  Stephan Wege

IPC分类号： H01L21/302

CPC分类号： H01L21/76811 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/3081 ,  H01L21/31144

摘要： A method for producing a semiconductor structure including preparing a semiconductor substrate, and generating a lower first, a middle second and an upper third masking layer on a surface of the semiconductor substrate. The method further includes forming at least one first window in the upper third masking layer, structuring the middle second masking layer using the first window for transferring the first window, structuring the lower first masking layer using the first window for transferring the first window, and enlarging the first window to form a second window. The method for further includes restructuring the middle second masking layer using the second window for transferring the second window, structuring the semiconductor substrate, using the structured lower third masking layer, restructuring the lower first masking layer using the second window, and restructuring the semiconductor substrate using the restructured lower third masking layer.

摘要翻译： 一种制造半导体结构的方法，包括制备半导体衬底，并在所述半导体衬底的表面上产生下部第一，中间第二和上部第三掩模层。 该方法还包括在上部第三掩蔽层中形成至少一个第一窗口，使用用于传送第一窗口的第一窗口构造中间第二掩蔽层，使用用于传送第一窗口的第一窗口构造下部第一掩蔽层，以及 扩大第一个窗口形成第二个窗口。 该方法还包括：使用第二窗口重建中间第二掩蔽层，使用结构化的下部第三掩蔽层，使用第二窗口重构下部第一掩蔽层，并重构半导体衬底，构建半导体衬底; 使用重组的下三层掩蔽层。

公开(公告)号：US20050196952A1

公开(公告)日：2005-09-08

申请号：US11065342

申请日：2005-02-25

申请人： Oliver Genz ,  Markus Kirchhoff ,  Stefan Machill ,  Alexander Reb ,  Barbara Schmidt ,  Momtchil Stavrev ,  Maik Stegeman ,  Stephan Wege

发明人： Oliver Genz ,  Markus Kirchhoff ,  Stefan Machill ,  Alexander Reb ,  Barbara Schmidt ,  Momtchil Stavrev ,  Maik Stegeman ,  Stephan Wege

IPC分类号： H01L21/027 ,  H01L21/033 ,  H01L21/308 ,  H01L21/311 ,  H01L21/4763 ,  H01L21/768 ,  H01L21/8234 ,  H01L21/8244

CPC分类号： H01L21/76811 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/3081 ,  H01L21/31144

摘要： A method for producing a semiconductor structure including preparing a semiconductor substrate, and generating a lower first, a middle second and an upper third masking layer on a surface of the semiconductor substrate. The method further includes forming at least one first window in the upper third masking layer, structuring the middle second masking layer using the first window for transferring the first window, structuring the lower first masking layer using the first window for transferring the first window, and enlarging the first window to form a second window. The method for further includes restructuring the middle second masking layer using the second window for transferring the second window, structuring the semiconductor substrate, using the structured lower third masking layer, restructuring the lower first masking layer using the second window, and restructuring the semiconductor substrate using the restructured lower third masking layer.

摘要翻译： 一种制造半导体结构的方法，包括制备半导体衬底，并在所述半导体衬底的表面上产生下部第一，中间第二和上部第三掩模层。 该方法还包括在上部第三掩蔽层中形成至少一个第一窗口，使用用于传送第一窗口的第一窗口构造中间第二掩蔽层，使用用于传送第一窗口的第一窗口构造下部第一掩蔽层，以及 扩大第一个窗口形成第二个窗口。 该方法还包括：使用第二窗口重建中间第二掩蔽层，使用结构化的下部第三掩蔽层，使用第二窗口重构下部第一掩蔽层，并重构半导体衬底，构建半导体衬底; 使用重组的下三层掩蔽层。

公开(公告)号：US20070247634A1

公开(公告)日：2007-10-25

申请号：US11407339

申请日：2006-04-20

申请人： Zhen-Long Chen ,  Peter Weidner ,  Pierre-Yves Guittet ,  Alexander Kasic ,  Barbara Schmidt ,  Anita Klee

发明人： Zhen-Long Chen ,  Peter Weidner ,  Pierre-Yves Guittet ,  Alexander Kasic ,  Barbara Schmidt ,  Anita Klee

IPC分类号： G01B9/02

CPC分类号： G01B11/0625

摘要： An apparatus for monitoring a trench profile of a substrate includes a radiation-emitting unit for irradiating the substrate with infrared radiation. The intensity and/or polarization state of the infrared radiation reflected from the substrate is measured at a multitude of measuring frequencies. An analyzing unit determines the respective reflectance and relative phase change and/or relative amplitude change in relation to the respective measuring frequency. In addition, a reflectance spectrum, a relative phase change spectrum and/or a relative amplitude change spectrum may be obtained. By performing a Fourier transformation of the respective spectrum, a secondary Fourier spectrum is obtained. The secondary Fourier spectrum plots a virtual amplitude against corresponding values of a frequency periodicity that correspond to a substrate depth. Peaks of the virtual amplitude may indicate reflective planes within the substrate at respective depths. Thus, rough sections in the trench profile may be identified without modeling.

摘要翻译： 用于监测衬底的沟槽轮廓的装置包括用于用红外辐射照射衬底的辐射发射单元。 在多个测量频率下测量从衬底反射的红外辐射的强度和/或极化状态。 分析单元确定相应于相应测量频率的相应反射率和相对相位变化和/或相对幅度变化。 此外，可以获得反射光谱，相对相变光谱和/或相对振幅变化光谱。 通过对相应的光谱进行傅立叶变换，获得次傅里叶光谱。 次傅立叶光谱绘制对应于对应于衬底深度的频率周期的相应值的虚拟振幅。 虚拟振幅的峰值可以指示在相应深度处的衬底内的反射平面。 因此，可以在没有建模的情况下识别沟槽轮廓中的粗糙部分。

公开(公告)号：US07815812B2

公开(公告)日：2010-10-19

申请号：US11536204

申请日：2006-09-28

申请人： Matthew F. Davis ,  Lei Lian ,  Barbara Schmidt

发明人： Matthew F. Davis ,  Lei Lian ,  Barbara Schmidt

IPC分类号： B21J19/04

CPC分类号： G05B19/41875 ,  G05B2219/32182 ,  G05B2219/37398 ,  G05B2219/45031 ,  G05B2219/45212 ,  H01J37/32935 ,  H01L21/3065 ,  H01L22/20 ,  Y02P90/20 ,  Y02P90/22

摘要： A method for controlling a process for fabricating integrated devices on a substrate. The method includes ex-situ and in-situ measurements of pre-etch and post-etch dimensions for structures formed on the substrate and uses the results of the measurements to adjust process recipes and to control the operational status of etch and external substrate processing equipment. In one exemplary application, the method is used during a multi-pass process for fabricating a capacitive structure of a trench capacitor.

摘要翻译： 一种用于控制在衬底上制造集成器件的工艺的方法。 该方法包括用于在衬底上形成的结构的预蚀刻和蚀刻后尺寸的原位和原位测量，并且使用测量结果来调整工艺配方并控制蚀刻和外部衬底处理设备的操作状态 。 在一个示例性应用中，该方法在用于制造沟槽电容器的电容结构的多遍处理期间被使用。

公开(公告)号：US07372579B2

公开(公告)日：2008-05-13

申请号：US11407339

申请日：2006-04-20

申请人： Zhen-Long Chen ,  Peter Weidner ,  Pierre-Yves Guittet ,  Alexander Kasic ,  Barbara Schmidt ,  Anita Klee

发明人： Zhen-Long Chen ,  Peter Weidner ,  Pierre-Yves Guittet ,  Alexander Kasic ,  Barbara Schmidt ,  Anita Klee

IPC分类号： G01B9/02

CPC分类号： G01B11/0625

摘要： An apparatus for monitoring a trench profile of a substrate includes a radiation-emitting unit for irradiating the substrate with infrared radiation. The intensity and/or polarization state of the infrared radiation reflected from the substrate is measured at a multitude of measuring frequencies. An analyzing unit determines the respective reflectance and relative phase change and/or relative amplitude change in relation to the respective measuring frequency. In addition, a reflectance spectrum, a relative phase change spectrum and/or a relative amplitude change spectrum may be obtained. By performing a Fourier transformation of the respective spectrum, a secondary Fourier spectrum is obtained. The secondary Fourier spectrum plots a virtual amplitude against corresponding values of a frequency periodicity that correspond to a substrate depth. Peaks of the virtual amplitude may indicate reflective planes within the substrate at respective depths. Thus, rough sections in the trench profile may be identified without modeling.

摘要翻译： 用于监测衬底的沟槽轮廓的装置包括用于用红外辐射照射衬底的辐射发射单元。 在多个测量频率下测量从衬底反射的红外辐射的强度和/或极化状态。 分析单元确定相应于相应测量频率的相应反射率和相对相位变化和/或相对幅度变化。 此外，可以获得反射光谱，相对相变光谱和/或相对振幅变化光谱。 通过对相应的光谱进行傅立叶变换，获得次傅里叶光谱。 次傅立叶光谱绘制对应于对应于衬底深度的频率周期的相应值的虚拟振幅。 虚拟振幅的峰值可以指示在相应深度处的衬底内的反射平面。 因此，可以在没有建模的情况下识别沟槽轮廓中的粗糙部分。

公开(公告)号：US08443664B2

公开(公告)日：2013-05-21

申请号：US12518448

申请日：2007-12-11

申请人： Johann Ludwig ,  Hans-Jürgen Neumann ,  Swen Ottmann ,  Christoph Schiel ,  Peter Tandler ,  Werner Krebs ,  Barbara Schmidt

发明人： Johann Ludwig ,  Hans-Jürgen Neumann ,  Swen Ottmann ,  Christoph Schiel ,  Peter Tandler ,  Werner Krebs ,  Barbara Schmidt

IPC分类号： G01F23/00

CPC分类号： B60T17/225 ,  B60T11/26 ,  G01F23/74

摘要： An equalizing tank for a hydraulic motor vehicle brake system, with a housing including a housing upper part and a housing lower part, and with a device for monitoring the fluid level in the equalizing tank, the device including a switching unit which is fastened to the housing and has a plug-in connector and a contact carrier, a portion of which projects into a guide pipe which extends into an interior space of the tank, and a sensor element or switching element which is arranged on the contact carrier in the region of the guide pipe and which can be switched by a transmitter in a switching point at which the switching unit generates a signal for an electronic control unit.

摘要翻译： 一种用于液压机动车辆制动系统的均衡罐，具有壳体，其包括壳体上部和壳体下部，以及用于监测均衡罐中的液位的装置，该装置包括切换单元，该切换单元紧固到 壳体并且具有插入式连接器和接触托架，其一部分突出到延伸到罐的内部空间中的引导管中，以及传感器元件或开关元件，该传感器元件或开关元件布置在接触载体上的区域 导向管，并且可以在切换单元产生用于电子控制单元的信号的切换点中由发射器切换。

公开(公告)号：US20110239758A1

公开(公告)日：2011-10-06

申请号：US12682833

申请日：2008-04-08

申请人： Johann Ludwig ,  Hans-Jürgen Neumann ,  Peter Tandler ,  Swen Ottmann ,  Christoph Schiel ,  Barbara Schmidt

发明人： Johann Ludwig ,  Hans-Jürgen Neumann ,  Peter Tandler ,  Swen Ottmann ,  Christoph Schiel ,  Barbara Schmidt

IPC分类号： H01H36/02

CPC分类号： B60T17/225 ,  B60T11/26 ,  G01F23/74 ,  H01H36/02

摘要： A method for optimizing the switching behaviour of a tank warning device of a compensation tank, in particular for a hydraulic motor-vehicle brake system, with a housing and the tank warning device for monitoring the tank filling level of the compensation tank. The tank warning device including a switching unit with a reed contact as a switching element, which can be switched by means of a magnet at a switching point S at which the switching unit generates a signal for an electronic control unit. A compensation tank including a tank warning device which has been optimized in terms of switching by means of a method according to the invention is also disclosed. The reed contact and the magnet are matched to one another in a manner optimized in terms of switching in such a way that the magnet switches at a single switching lobe of the reed contact.

摘要翻译： 一种用于优化补偿罐的油箱警告装置（特别是用于液压机动车辆制动系统）与壳体的开关特性的方法，以及用于监测补偿罐的罐装液位的油箱警告装置。 油箱报警装置包括具有簧片触点的开关单元作为开关元件，该开关单元可以在开关单元产生用于电子控制单元的信号的切换点S处借助于磁体进行切换。 还公开了一种包括通过根据本发明的方法在切换方面优化的油箱警告装置的补偿罐。 簧片接触件和磁体以以切换方式优化的方式彼此匹配，使得磁体在簧片接触的单个切换凸角处切换。

公开(公告)号：US07226623B2

公开(公告)日：2007-06-05

申请号：US11262676

申请日：2005-10-31

申请人： Christophe Ripoll ,  Barbara Schmidt ,  Nebojsa Ilic ,  Ilya Raskin

发明人： Christophe Ripoll ,  Barbara Schmidt ,  Nebojsa Ilic ,  Ilya Raskin

IPC分类号： A61K36/00

CPC分类号： A61K36/28 ,  A61K31/365

摘要： A method of preparing a chicory extract enriched with sesquiterpene lactones is provided. The method includes performing an initial extraction chicory in a polar solvent, such as methanol or ethanol, at ambient temperature to form an alcoholic extract. The alcoholic extract is subsequently defatted with a non-polar solvent, preferably hexane or n-heptane. A second extraction of the defatted alcoholic extract is performed with a solvent which is more polar than the solvent used in the defatting process and less polar than the solvent used in the initial extraction, for example, it can be chosen from the group consisting of ethyl acetate, n-butanol, isopropanol, n-propanol, dichloromethane, acetonitrile, and mixtures thereof; resulting in a sesquiterpene lactones enriched extract, preferably containing at least 60% sesquiterpene lactones.

摘要翻译： 提供了一种制备富含倍半萜内酯的菊苣提取物的方法。 该方法包括在环境温度下在极性溶剂如甲醇或乙醇中进行初始提取菊苣以形成醇提取物。 随后用非极性溶剂，优选己烷或正庚烷将醇提取物脱脂。 脱脂醇提取物的第二次萃取用比脱脂方法中使用的溶剂更极性的溶剂进行，极性低于初始提取中使用的溶剂，例如可以选自乙基 乙酸酯，正丁醇，异丙醇，正丙醇，二氯甲烷，乙腈及其混合物; 导致富含倍半萜内酯的提取物，优选含有至少60％倍半萜内酯。

公开(公告)号：US06939805B2

公开(公告)日：2005-09-06

申请号：US10253196

申请日：2002-09-24

申请人： Jörn Lützen ,  Barbara Schmidt ,  Stefan Rongen ,  Martin Schrems ,  Daniel Köhler

发明人： Jörn Lützen ,  Barbara Schmidt ,  Stefan Rongen ,  Martin Schrems ,  Daniel Köhler

IPC分类号： C09K13/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/461 ,  H01L21/8242

CPC分类号： H01L27/10861 ,  H01L21/3065 ,  H01L27/1087

摘要： To fabricate a trench capacitor in a substrate, a trench is formed in the substrate. The trench has an upper region and a lower region. In the trench, first of all nanocrystallites and/or a seed layer for nanocrystallites are deposited in the upper region and the lower region. Then, the nanocrystallites and/or the seed layer are removed from the upper region of the trench by means of an etching process. The etching parameters of the etching process are selected in such a way that the seed layer and/or the nanocrystallites which are uncovered in the upper region and the lower region are removed only from the upper region. Consequently, an expensive mask layer can be avoided in the lower region of the trench.

摘要翻译： 为了在衬底中制造沟槽电容器，在衬底中形成沟槽。 沟槽具有上部区域和下部区域。 在沟槽中，在上部区域和下部区域中首先沉积纳米晶体和/或纳米晶体的晶种层。 然后，通过蚀刻工艺从沟槽的上部区域去除纳米晶体和/或种子层。 选择蚀刻工艺的蚀刻参数，使得在上部区域和下部区域中未被覆盖的种子层和/或纳米晶体仅从上部区域移除。 因此，可以在沟槽的下部区域避免昂贵的掩模层。

公开(公告)号：US20110318403A1

公开(公告)日：2011-12-29

申请号：US13129077

申请日：2009-11-12

申请人： Ilya Raskin ,  Barbara Schmidt ,  Caren Villano ,  Leonel Eduardo Rojo Castillo

发明人： Ilya Raskin ,  Barbara Schmidt ,  Caren Villano ,  Leonel Eduardo Rojo Castillo

IPC分类号： A61K9/70 ,  A61K8/97 ,  A61Q17/04 ,  A61Q19/08 ,  A61P17/02 ,  A61P31/00 ,  A61P17/10 ,  A61Q19/00 ,  A61K36/185 ,  C12N5/071

CPC分类号： A61Q19/00 ,  A61K8/922 ,  A61K9/0014 ,  A61K36/185

摘要： A method of preparing Pouteria lucuma extract was developed which comprises extracting oil from the nut. The lucuma nut oil (LNO) was effective to induce cell migration, enhance tissue regeneration and enhance wound healing. The lucuma nut oil provides an agent that is useful for therapeutic or cosmetic maintenance of skin and scalp.

摘要翻译： 开发了一种制备Pouteria lucuma提取物的方法，其中包括从螺母中提取油。 亮丽坚果油（LNO）有效诱导细胞迁移，增强组织再生和增强伤口愈合。 紫苏坚果油提供了一种可用于治疗或美容维护皮肤和头皮的药剂。