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11 条记录 (耗时 0.015 秒)

    Controlled electrochemical polishing method
    3.
    发明申请
    Controlled electrochemical polishing method 失效
    控制电化学抛光方法

    公开(公告)号：US20060281196A1

    公开(公告)日：2006-12-14

    申请号：US11150944

    申请日：2005-06-13

    申请人： Paul Feeney ,  Vlasta Brusic

    发明人： Paul Feeney ,  Vlasta Brusic

    IPC分类号： H01L21/00 ,  H01L21/461

    CPC分类号： C25F3/02 ,  B23H5/08 ,  C25D5/34 ,  C25D5/48 ,  C25D7/12 ,  H01L21/32125

    摘要： The invention relates to a method of polishing a substrate comprising at least one metal layer by applying an electrochemical potential between the substrate and at least one electrode in contact with a polishing composition comprising a reducing agent or an oxidizing agent.

    摘要翻译： 本发明涉及一种通过在衬底和至少一个与包含还原剂或氧化剂的抛光组合物接触的电极之间施加电化学电势来抛光包含至少一个金属层的衬底的方法。

    Composition and method for damascene CMP
    5.
    发明申请
    Composition and method for damascene CMP 有权
    大马士革CMP的组成和方法

    公开(公告)号：US20080113589A1

    公开(公告)日：2008-05-15

    申请号：US11599199

    申请日：2006-11-13

    申请人： Paul Feeney ,  Sriram Anjur ,  Jeffrey Dysard

    发明人： Paul Feeney ,  Sriram Anjur ,  Jeffrey Dysard

    IPC分类号： B24B29/02 ,  B24B7/00 ,  C09K3/14

    CPC分类号： C09K3/1463 ,  B24B37/044 ,  C09K3/1409

    摘要： The invention provides a method of chemically-mechanically polishing a substrate having at least one feature defined thereon, wherein the feature has at least one dimension with a size W, with a chemical-mechanical polishing composition. The polishing composition comprises particles of an abrasive wherein the particles have a mean particle diameter DM wherein the mean particle diameter of the particles satisfies the equation: DM>W. The invention further provides a method of preparing the chemical-mechanical polishing composition.

    摘要翻译： 本发明提供了一种化学机械抛光具有其上限定的至少一个特征的基材的方法，其中所述特征具有尺寸为W的至少一个尺寸，具有化学机械抛光组合物。 抛光组合物包含研磨剂颗粒，其中颗粒具有平均粒径D M M，其中颗粒的平均粒径满足以下等式：D M M / W。 本发明还提供了一种制备化学 - 机械抛光组合物的方法。

    Compositions and methods for CMP of phase change alloys
    7.
    发明授权
    Compositions and methods for CMP of phase change alloys 有权
    相变合金CMP的组成和方法

    公开(公告)号：US07897061B2

    公开(公告)日：2011-03-01

    申请号：US11699129

    申请日：2007-01-29

    申请人： Jeffrey Dysard ,  Paul Feeney ,  Sriram Anjur

    发明人： Jeffrey Dysard ,  Paul Feeney ,  Sriram Anjur

    IPC分类号： C09K13/00

    CPC分类号： C23F3/06 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L45/06 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1683

    摘要： The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing a substrate comprising a phase change alloy (PCA), such as a germanium-antimony-tellurium (GST) alloy. The composition comprises not more than about 6 percent by weight of a particulate abrasive material in combination with an optional oxidizing agent, at least one chelating agent, and an aqueous carrier therefor. The chelating agent comprises a compound or combination of compounds capable of chelating a phase change alloy or component thereof (e.g., germanium, indium, antimony and/or tellurium species) that is present in the substrate, or chelating a substance that is formed from the PCA during polishing of the substrate with the CMP composition. A CMP method for polishing a phase change alloy-containing substrate utilizing the composition is also disclosed.

    摘要翻译： 本发明提供适用于抛光包含相变合金（PCA）如锗 - 锑 - 碲（GST）合金的基材的化学机械抛光（CMP）组合物。 组合物包含不超过约6重量％的颗粒磨料与任选的氧化剂，至少一种螯合剂及其水性载体的组合。 螯合剂包括能够螯合存在于底物中的相变合金或其组分（例如，锗，铟，锑和/或碲物质）的化合物或化合物的组合，或螯合由该底物形成的物质 PCA在用CMP组合物抛光衬底的过程中。 还公开了利用该组合物研磨含相变合金的基材的CMP方法。

    Method for controlling polysilicon removal
    8.
    发明申请
    Method for controlling polysilicon removal 审中-公开
    控制多晶硅去除的方法

    公开(公告)号：US20070077865A1

    公开(公告)日：2007-04-05

    申请号：US11243140

    申请日：2005-10-04

    申请人： Jeffrey Dysard ,  Timothy Johns ,  Paul Feeney

    发明人： Jeffrey Dysard ,  Timothy Johns ,  Paul Feeney

    IPC分类号： B24B7/30 ,  B24B1/00

    CPC分类号： H01L21/3212 ,  C09G1/02

    摘要： The invention is directed to a method of chemically-mechanically polishing a substrate comprising polysilicon and a material selected from silicon oxide and silicon nitride with a chemical-mechanical polishing system comprising an abrasive, a polyethylene oxide/polypropylene oxide copolymer, water, and a polishing pad.

    摘要翻译： 本发明涉及一种化学机械抛光包括多晶硅和选自氧化硅和氮化硅的材料的衬底的方法，该化学机械抛光系统包括研磨剂，聚环氧乙烷/聚丙烯氧化物共聚物，水和抛光 垫。

    Compositions and methods for CMP of phase change alloys
    10.
    发明申请
    Compositions and methods for CMP of phase change alloys 有权
    相变合金CMP的组成和方法

    公开(公告)号：US20070178700A1

    公开(公告)日：2007-08-02

    申请号：US11699129

    申请日：2007-01-29

    申请人： Jeffrey Dysard ,  Paul Feeney ,  Sriram Anjur

    发明人： Jeffrey Dysard ,  Paul Feeney ,  Sriram Anjur

    IPC分类号： C09K13/00 ,  C03C15/00 ,  H01L21/302

    CPC分类号： C23F3/06 ,  C09G1/02 ,  C09K3/1409 ,  C09K3/1463 ,  H01L45/06 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1683

    摘要： The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing a substrate comprising a phase change alloy (PCA), such as a germanium-antimony-tellurium (GST) alloy. The composition comprises not more than about 6 percent by weight of a particulate abrasive material in combination with an optional oxidizing agent, at least one chelating agent, and an aqueous carrier therefor. The chelating agent comprises a compound or combination of compounds capable of chelating a phase change alloy or component thereof (e.g., germanium, indium, antimony and/or tellurium species) that is present in the substrate, or chelating a substance that is formed from the PCA during polishing of the substrate with the CMP composition. A CMP method for polishing a phase change alloy-containing substrate utilizing the composition is also disclosed.

    摘要翻译： 本发明提供适用于抛光包含相变合金（PCA）如锗 - 锑 - 碲（GST）合金的基材的化学机械抛光（CMP）组合物。 组合物包含不超过约6重量％的颗粒磨料与任选的氧化剂，至少一种螯合剂及其水性载体的组合。 螯合剂包括能够螯合存在于底物中的相变合金或其组分（例如，锗，铟，锑和/或碲物质）的化合物或化合物的组合，或螯合由该底物形成的物质 PCA在用CMP组合物抛光衬底的过程中。 还公开了利用该组合物研磨含相变合金的基材的CMP方法。