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    STRUCTURE AND METHOD FOR MANUFACTURING TRENCH CAPACITANCE
    4.
    发明申请
    STRUCTURE AND METHOD FOR MANUFACTURING TRENCH CAPACITANCE 有权
    用于制造TRENCH电容的结构和方法

    公开(公告)号：US20100038751A1

    公开(公告)日：2010-02-18

    申请号：US12191430

    申请日：2008-08-14

    申请人： HUILONG ZHU ,  Babar A. Khan ,  Xi Li ,  Joyce C. Liu ,  Thomas A. Wallner

    发明人： HUILONG ZHU ,  Babar A. Khan ,  Xi Li ,  Joyce C. Liu ,  Thomas A. Wallner

    IPC分类号： H01L29/00 ,  H01L21/20

    CPC分类号： H01L29/66181 ,  H01L27/10861

    摘要： A deep trench (DT) capacitor comprises a trench in a silicon layer, a buried plate surrounding the trench, a dielectric layer lining the trench, and a node conductor in the trench. The top surface of the poly node is higher than the surface of the silicon layer, so that it is high enough to ensure that a nitride liner used as a CMP etch stop for STI oxide surrounding a top portion of the poly node will be higher than the STI oxide, so that the nitride liner can be removed prior to forming a silicide contact on top of the poly node.

    摘要翻译： 深沟槽（DT）电容器包括硅层中的沟槽，围绕沟槽的掩埋板，衬套沟槽的电介质层和沟槽中的节点导体。 多晶硅节点的顶表面高于硅层的表面，使得其足够高以确保用作CMP蚀刻的氮化物衬垫停止用于围绕多晶硅节点的顶部的STI氧化物将高于 STI氧化物，使得氮化物衬垫可以在在多晶硅节点的顶部形成硅化物接触之前被去除。

    METHOD OF FORMING DISPOSABLE SPACERS FOR IMPROVED STRESSED NITRIDE FILM EFFECTIVENESS
    5.
    发明申请
    METHOD OF FORMING DISPOSABLE SPACERS FOR IMPROVED STRESSED NITRIDE FILM EFFECTIVENESS 审中-公开
    形成改善间隔物的方法，用于改善耐压氮化膜的有效性

    公开(公告)号：US20080182372A1

    公开(公告)日：2008-07-31

    申请号：US11669645

    申请日：2007-01-31

    申请人： Joyce C. Liu ,  Hongwen Yan ,  Qingyun Yang ,  Ying Zhang

    发明人： Joyce C. Liu ,  Hongwen Yan ,  Qingyun Yang ,  Ying Zhang

    IPC分类号： H01L21/8238

    CPC分类号： H01L29/6653 ,  H01L21/3146 ,  H01L21/823864 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7843

    摘要： A method of forming a complementary metal oxide semiconductor (CMOS) device includes forming an oxide layer on sidewalls and a top surface of a patterned gate conductor, and on sidewalls of a gate insulating layer formed on a semiconductor substrate; forming a first carbon-based layer over the gate conductor, gate insulating layer, and substrate; etching the first carbon-based layer so as to create a first set of carbon spacers; forming a second carbon-based layer over the gate conductor, gate insulating layer, substrate, and first set of carbon spacers; etching the second carbon-based layer so as to create a second set of carbon spacers; forming silicide contacts on the gate conductor, and on source and drain regions formed in the substrate; removing the first and second sets of carbon spacers; and forming a stress-inducing nitride layer over the substrate, silicide contacts, gate conductor, and gate insulating layer.

    摘要翻译： 形成互补金属氧化物半导体（CMOS）器件的方法包括在图案化栅极导体的侧壁和顶表面上以及形成在半导体衬底上的栅极绝缘层的侧壁上形成氧化物层; 在栅极导体，栅极绝缘层和衬底上形成第一碳基层; 蚀刻第一碳基层以产生第一组碳间隔物; 在栅极导体，栅极绝缘层，衬底和第一组碳隔离物上形成第二碳基层; 蚀刻第二碳基层以产生第二组碳间隔物; 在栅极导体上形成硅化物触点，以及在衬底中形成的源极和漏极区上; 去除第一和第二组碳间隔物; 以及在衬底上形成应力诱导氮化物层，硅化物接触，栅极导体和栅极绝缘层。

    Dual mask process for semiconductor devices
    7.
    发明授权
    Dual mask process for semiconductor devices 失效
    半导体器件的双掩模工艺

    公开(公告)号：US06429067B1

    公开(公告)日：2002-08-06

    申请号：US09765036

    申请日：2001-01-17

    申请人： Joyce C. Liu ,  James C. Brighten ,  Jeffrey J. Brown ,  John Golz ,  George A. Kaplita ,  Rebecca Mih ,  Senthil Srinivasan ,  Jin Jwang Wu ,  Teresa J. Wu ,  Chienfan Yu

    发明人： Joyce C. Liu ,  James C. Brighten ,  Jeffrey J. Brown ,  John Golz ,  George A. Kaplita ,  Rebecca Mih ,  Senthil Srinivasan ,  Jin Jwang Wu ,  Teresa J. Wu ,  Chienfan Yu

    IPC分类号： H01L218242

    CPC分类号： H01L27/10894 ,  H01L21/823842 ,  H01L27/10873

    摘要： A method for fabricating a dual gate structure, comprising providing a semiconductor substrate having a first device area and a second device area covered by a gate oxide layer and a polysilicon layer, forming a first hard mask over the polysilicon layer, said first hard mask being a material that is resistant to a first etching, but susceptible to a second etching forming a second hard mask over the first hard mask and the polysilicon layer, said second hard mask being a material that is resistant to a second etching, but susceptible to a first etching, patterning and etching said second hard mask with a first etch to form a gate pattern on a first device area, and patterning and etching said first hard mask with a second etch to transfer gate patterns on the first and second device areas.

    摘要翻译： 一种制造双栅结构的方法，包括提供半导体衬底，其具有由栅极氧化层和多晶硅层覆盖的第一器件区域和第二器件区域，在所述多晶硅层上形成第一硬掩模，所述第一硬掩模为 耐受第一蚀刻的材料，但易于在第一硬掩模和多晶硅层上形成第二硬掩模的第二蚀刻，所述第二硬掩模是耐第二蚀刻的材料，但易受第 首先用第一蚀刻蚀刻图案并蚀刻所述第二硬掩模，以在第一器件区域上形成栅极图案，并用第二蚀刻图案化和蚀刻所述第一硬掩模以在第一和第二器件区域上传输栅极图案。

    METHOD AND SYSTEM FOR PLASMA ETCHING HAVING IMPROVED ACROSS-WAFER ETCH UNIFORMITY
    9.
    发明申请
    METHOD AND SYSTEM FOR PLASMA ETCHING HAVING IMPROVED ACROSS-WAFER ETCH UNIFORMITY 审中-公开
    等离子体蚀刻的方法和系统具有改进的跨越蚀刻均匀性

    公开(公告)号：US20080194112A1

    公开(公告)日：2008-08-14

    申请号：US11673128

    申请日：2007-02-09

    申请人： Qingyun Yang ,  Joyce C. Liu ,  Hongwen Yan ,  Ying Zhang

    发明人： Qingyun Yang ,  Joyce C. Liu ,  Hongwen Yan ,  Ying Zhang

    IPC分类号： H01L21/3065

    CPC分类号： H01L21/32136 ,  H01L21/32137 ,  H01L21/6708

    摘要： A method for improving across-wafer etch uniformity of semiconductor devices in an etching chamber, wherein the method includes: introducing a first flow of gas mixtures from a central gas distribution plate manifold; introducing a second flow of gas mixtures from an auxiliary gas feed; and controlling process parameters including one or more of: duration, power, pressure, and gas flow rates for the first and second flow of gas mixtures; wherein the central gas distribution plate manifold is positioned above the semiconductor wafer; wherein the auxiliary gas feed is positioned around the perimeter of the semiconductor wafer; and wherein the controlling of the process parameters of the central gas distribution plate manifold and the auxiliary gas feed is facilitated by independent controls.

    摘要翻译： 一种用于改善蚀刻室中的半导体器件的跨晶片蚀刻均匀性的方法，其中所述方法包括：从中央气体分配板歧管引入第一气体混合物流; 从辅助气体进料引入第二气体混合物流; 以及控制过程参数，包括以下一个或多个：气体混合物的第一和第二流动的持续时间，功率，压力和气体流速; 其中所述中央气体分配板歧管位于所述半导体晶片的上方; 其中所述辅助气体进料围绕所述半导体晶片的周边定位; 并且其中通过独立控制来促进对中央气体分配板歧管和辅助气体进料的工艺参数的控制。

    Method of producing heat dissipating structure for semiconductor devices
    10.
    发明授权
    Method of producing heat dissipating structure for semiconductor devices 失效
    制造半导体器件散热结构的方法

    公开(公告)号：US06284574B1

    公开(公告)日：2001-09-04

    申请号：US09223979

    申请日：1999-01-04

    申请人： Kevin Shawn Petrarca ,  Sarah Knickerbocker ,  Joyce C. Liu ,  Rebecca D. Mih

    发明人： Kevin Shawn Petrarca ,  Sarah Knickerbocker ,  Joyce C. Liu ,  Rebecca D. Mih

    IPC分类号： H01L2148

    CPC分类号： H01L23/36 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/00

    摘要： A structure and process are described for facilitating the conduction of heat away from a semiconductor device. Thermally conductive planes and columns are incorporated within the back-end structure and around the interconnect outside the chip. A thermally conductive plane is formed by forming a first insulating layer on an underlying layer of the device; forming a recess in the insulating layer; filling the recess with a thermally conductive material to form a lateral heat-dissipating layer; planarizing the heat-dissipating layer to make the top surface thereof coplanar with the unrecessed portion of the insulating layer; and forming a second insulating layer on the first insulating layer and the heat-dissipating layer, thereby embedding the heat-dissipating layer between the first and second insulating layers. The heat-dissipating layer is electrically isolated from the underlying layer of the device, and preferably is electrically grounded.

    摘要翻译： 描述了用于促进远离半导体器件的热传导的结构和工艺。 导热平面和列结合在后端结构中并且围绕芯片外的互连。 导热平面通过在器件的下层上形成第一绝缘层而形成; 在所述绝缘层中形成凹部; 用导热材料填充凹部以形成横向散热层; 使散热层平坦化，使其顶面与绝缘层的未加工部分共面; 以及在所述第一绝缘层和所述散热层上形成第二绝缘层，从而将所述散热层嵌入所述第一绝缘层和所述第二绝缘层之间。 散热层与器件的下层电隔离，优选电接地。