公开(公告)号：US20110136346A1

公开(公告)日：2011-06-09

申请号：US12631117

申请日：2009-12-04

申请人： Phillip Geissbühler ,  Ivan Berry ,  Armin Huseinovic ,  Shijian Luo ,  Aseem Kumar Srivastava ,  Carlo Waldfried

发明人： Phillip Geissbühler ,  Ivan Berry ,  Armin Huseinovic ,  Shijian Luo ,  Aseem Kumar Srivastava ,  Carlo Waldfried

IPC分类号： H01L21/3065 ,  G03F7/42 ,  B08B7/00

CPC分类号： H01L21/67069 ,  H01J37/32357 ,  H01J37/32477 ,  H01J37/32504 ,  H01J37/32844 ,  H01J37/32935 ,  H01L21/31138 ,  Y02C20/30 ,  Y02P70/605

摘要： Non-oxidizing plasma treatment devices for treating a semiconductor workpiece generally include a substantially non-oxidizing gas source; a plasma generating component in fluid communication with the non-oxidizing gas source; a process chamber in fluid communication with the plasma generating component, and an exhaust conduit centrally located in a bottom wall of the process chamber. In one embodiment, the process chamber is formed of an aluminum alloy containing less than 0.15% copper by weight; In other embodiments, the process chamber includes a coating of a non-copper containing material to prevent formation of copper hydride during processing with substantially non-oxidizing plasma. In still other embodiments, the process chamber walls are configured to be heated during plasma processing. Also disclosed are non-oxidizing plasma processes.

摘要翻译： 用于处理半导体工件的非氧化等离子体处理装置通常包括基本上非氧化气体源; 与非氧化性气体源流体连通的等离子体产生部件; 与等离子体产生部件流体连通的处理室和位于处理室的底壁中心的排气导管。 在一个实施例中，处理室由含有少于0.15重量％铜的铝合金形成; 在其它实施方案中，处理室包括不含铜的材料的涂层，以防止在基本上非氧化等离子体的处理期间形成氢化铜。 在其它实施例中，处理室壁构造成在等离子体处理期间被加热。 还公开了非氧化等离子体工艺。

公开(公告)号：US20100130017A1

公开(公告)日：2010-05-27

申请号：US12275394

申请日：2008-11-21

申请人： Shijian Luo ,  Orlando Escorcia ,  Carlo Waldfried ,  Ivan Berry

发明人： Shijian Luo ,  Orlando Escorcia ,  Carlo Waldfried ,  Ivan Berry

IPC分类号： H01L21/3065

CPC分类号： H01L21/31138 ,  H01J37/3244 ,  H01J37/32449

摘要： Front end of line (FEOL) plasma mediated ashing processes for removing organic material from a substrate generally includes exposing the substrate to the plasma to selectively remove photoresist, implanted photoresist, polymers and/or residues from the substrate, wherein the plasma contains a ratio of active nitrogen and active oxygen that is larger than a ratio of active nitrogen and active oxygen obtainable from plasmas of gas mixtures comprising oxygen gas and nitrogen gas. The plasma exhibits high throughput while minimizing and/or preventing substrate oxidation and dopant bleaching. Plasma apparatuses are also described.

摘要翻译： 用于从衬底去除有机材料的等离子体介质灰化过程的前端（FEOL）通常包括将衬底暴露于等离子体以选择性地从衬底去除光致抗蚀剂，植入的光致抗蚀剂，聚合物和/或残余物，其中等离子体包含 活性氮和活性氧，其大于可由包含氧气和氮气的气体混合物的等离子体获得的活性氮和活性氧的比例。 等离子体显示出高通量，同时最小化和/或防止底物氧化和掺杂剂漂白。 还描述了等离子体装置。

公开(公告)号：US20090277871A1

公开(公告)日：2009-11-12

申请号：US12398390

申请日：2009-03-05

申请人： Ivan Berry ,  Orlando Escorcia ,  Keping Han ,  Jianan Hou ,  Shijian Luo ,  Carlo Waldfried

发明人： Ivan Berry ,  Orlando Escorcia ,  Keping Han ,  Jianan Hou ,  Shijian Luo ,  Carlo Waldfried

IPC分类号： C23F1/00 ,  C23F1/08

CPC分类号： G03F7/38 ,  G03F7/427 ,  H01J37/32449 ,  H01L21/31138

摘要： Processes for stripping high dose ion implanted photoresist while minimizing substrate loss. The processes generally include passivation of the substrate surface before and/or during a plasma mediated stripping process. By passivating the substrate surface before and/or during the plasma mediated stripping process, oxidation is substantially reduced during plasma stripping thereby leading to reduced substrate loss.

摘要翻译： 用于剥离高剂量离子注入的光致抗蚀剂同时尽量减少底物损失的方法。 这些方法通常包括在等离子体介质剥离过程之前和/或期间对衬底表面的钝化。 通过在等离子体介质剥离过程之前和/或期间钝化衬底表面，在等离子体剥离期间，氧化显着降低，从而导致衬底损耗降低。

公开(公告)号：US08580076B2

公开(公告)日：2013-11-12

申请号：US10249962

申请日：2003-05-22

申请人： Alan Frederick Becknell ,  Thomas James Buckley ,  David Ferris ,  Richard E. Pingree, Jr. ,  Palanikumaran Sakthivel ,  Aseem Kumar Srivastava ,  Carlo Waldfried

发明人： Alan Frederick Becknell ,  Thomas James Buckley ,  David Ferris ,  Richard E. Pingree, Jr. ,  Palanikumaran Sakthivel ,  Aseem Kumar Srivastava ,  Carlo Waldfried

IPC分类号： H01L21/3065 ,  C23C16/00 ,  C23C16/4412 ,  C23C16/455 ,  C23C16/45561 ,  C23C16/45563 ,  C23C16/46 ,  C23C16/505 ,  C23C16/511

CPC分类号： H01J37/32357 ,  H01J37/3244 ,  H01J37/32844 ,  Y02C20/30

摘要： A plasma apparatus, various components of the plasma apparatus, and an oxygen free and nitrogen free processes for effectively removing photoresist material and post etch residues from a substrate with a carbon and/or hydrogen containing low k dielectric layer(s).

摘要翻译： 等离子体装置，等离子体装置的各种部件，以及无氧和无氮的方法，用于有效地去除光致抗蚀剂材料，并且用含有低k电介质层的碳和/或氢的底物后蚀刻残留物。

公开(公告)号：US20110226280A1

公开(公告)日：2011-09-22

申请号：US13117488

申请日：2011-05-27

申请人： Ivan L. Berry ,  Carlo Waldfried ,  Shijian Luo ,  Orlando Escorcia

发明人： Ivan L. Berry ,  Carlo Waldfried ,  Shijian Luo ,  Orlando Escorcia

IPC分类号： B08B7/00 ,  B08B13/00 ,  C23F1/08

CPC分类号： H01L21/02101 ,  G03F7/427 ,  H01L21/31138

摘要： A plasma ashing process for removing photoresist, polymers and/or residues from a substrate comprises placing the substrate including the photoresist, polymers, and/or residues into a reaction chamber; generating a plasma from a gas mixture comprising oxygen gas (O2) and/or an oxygen containing gas; suppressing and/or reducing fast diffusing species in the plasma; and exposing the substrate to the plasma to selectively remove the photoresist, polymers, and/or residues from the substrate, wherein the plasma is substantially free from fast diffusing species.

摘要翻译： 用于从基板去除光致抗蚀剂，聚合物和/或残留物的等离子体灰化处理包括将包括光致抗蚀剂，聚合物和/或残余物的基材放置在反应室中; 从包含氧气（O 2）和/或含氧气体的气体混合物产生等离子体; 抑制和/或减少等离子体中的快速扩散物质; 以及将所述衬底暴露于所述等离子体以选择性地从所述衬底去除所述光致抗蚀剂，聚合物和/或残留物，其中所述等离子体基本上不含快速扩散物质。

公开(公告)号：US20070134935A1

公开(公告)日：2007-06-14

申请号：US11702465

申请日：2007-02-05

申请人： Carlo Waldfried ,  Orlando Escorcia ,  Ivan Berry

发明人： Carlo Waldfried ,  Orlando Escorcia ,  Ivan Berry

IPC分类号： H01L21/469

CPC分类号： H01L21/76825 ,  C23C16/56 ,  H01L21/02107 ,  H01L21/02203 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/31051 ,  H01L21/31058 ,  H01L21/31695 ,  H01L21/76826

摘要： Processes for sealing porous low k dielectric film generally comprises exposing the porous surface of the porous low k dielectric film to ultraviolet (UV) radiation at intensities, times, wavelengths and in an atmosphere effective to seal the porous dielectric surface by means of carbonization, oxidation, and/or film densification. The surface of the surface of the porous low k material is sealed to a depth less than or equal to about 20 nanometers, wherein the surface is substantially free of pores after the UV exposure.

摘要翻译： 用于密封多孔低k电介质膜的方法通常包括将多孔低k电介质膜的多孔表面暴露于强度，时间，波长和大气中的紫外（UV）辐射，其有效地通过碳化，氧化来密封多孔电介质表面 ，和/或膜致密化。 多孔低k材料的表面的表面被密封到小于或等于约20纳米的深度，其中在UV暴露后该表面基本上没有孔。

公开(公告)号：US07704872B2

公开(公告)日：2010-04-27

申请号：US11702465

申请日：2007-02-05

申请人： Carlo Waldfried ,  Orlando Escorcia ,  Ivan Berry

发明人： Carlo Waldfried ,  Orlando Escorcia ,  Ivan Berry

IPC分类号： H01L21/4763

CPC分类号： H01L21/76825 ,  C23C16/56 ,  H01L21/02107 ,  H01L21/02203 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/31051 ,  H01L21/31058 ,  H01L21/31695 ,  H01L21/76826

摘要： Processes for sealing porous low k dielectric film generally comprises exposing the porous surface of the porous low k dielectric film to ultraviolet (UV) radiation at intensities, times, wavelengths and in an atmosphere effective to seal the porous dielectric surface by means of carbonization, oxidation, and/or film densification. The surface of the surface of the porous low k material is sealed to a depth less than or equal to about 20 nanometers, wherein the surface is substantially free of pores after the UV exposure.

公开(公告)号：US20060105566A1

公开(公告)日：2006-05-18

申请号：US10987276

申请日：2004-11-12

申请人： Carlo Waldfried ,  Orlando Escorcia ,  Ivan Berry

发明人： Carlo Waldfried ,  Orlando Escorcia ,  Ivan Berry

IPC分类号： H01L21/4763

CPC分类号： H01L21/76825 ,  C23C16/56 ,  H01L21/02107 ,  H01L21/02203 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/31051 ,  H01L21/31058 ,  H01L21/31695 ,  H01L21/76826

摘要： Processes for sealing porous low k dielectric film generally comprises exposing the porous surface of the porous low k dielectric film to ultraviolet (UV) radiation at intensities, times, wavelengths and in an atmosphere effective to seal the porous dielectric surface by means of carbonization, oxidation, and/or film densification. The surface of the surface of the porous low k material is sealed to a depth less than or equal to about 20 nanometers, wherein the surface is substantially free of pores after the UV exposure.

摘要翻译： 用于密封多孔低k电介质膜的方法通常包括将多孔低k电介质膜的多孔表面暴露于强度，时间，波长和大气中的紫外线（UV）辐射，有效地通过碳化，氧化来密封多孔电介质表面 ，和/或膜致密化。 多孔低k材料的表面的表面被密封到小于或等于约20纳米的深度，其中在UV暴露后该表面基本上没有孔。

公开(公告)号：US20060024976A1

公开(公告)日：2006-02-02

申请号：US11146742

申请日：2005-06-07

申请人： Carlo Waldfried ,  Qingyuan Han ,  Orlando Escorcia ,  Ivan Berry

发明人： Carlo Waldfried ,  Qingyuan Han ,  Orlando Escorcia ,  Ivan Berry

IPC分类号： H01L21/31 ,  H01L21/26

CPC分类号： H01L21/7682 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02271 ,  H01L21/02348 ,  H01L21/31695 ,  H01L21/76825 ,  H01L2221/1047

摘要： Processes for forming porous low k dielectric materials from low k dielectric films containing a porogen material include exposing the low k dielectric film to ultraviolet radiation. In one embodiment, the film is exposed to broadband ultraviolet radiation of less than 240 nm for a period of time and intensity effective to remove the porogen material. In other embodiments, the low k dielectric film is exposed to a first ultraviolet radiation pattern effective to increase a crosslinking density of the film matrix while maintaining a concentration of the porogen material substantially the same before and after exposure to the first ultraviolet radiation pattern. The low k dielectric film can be then be processed to form a metal interconnect structure therein and subsequently exposed to a second ultraviolet radiation pattern effective to remove the porogen material from the low k dielectrics film and form a porous low k dielectric film.

公开(公告)号：US06630406B2

公开(公告)日：2003-10-07

申请号：US09855177

申请日：2001-05-14

申请人： Carlo Waldfried ,  Ivan Berry ,  Orlando Escorcia ,  Qingyuan Han ,  Palani Sakthivel

发明人： Carlo Waldfried ,  Ivan Berry ,  Orlando Escorcia ,  Qingyuan Han ,  Palani Sakthivel

IPC分类号： H01L21302

CPC分类号： H01L21/02071 ,  H01J2237/3342 ,  H01L21/31138

摘要： An oxygen-free and nitrogen-free plasma ashing process for removing photoresist in the presence of a low k material from a semiconductor substrate. The process includes forming reactive species by exposing a plasma gas composition to an energy source to form plasma. The plasma gas composition is free from oxygen-bearing and nitrogen-bearing gases. The plasma selectively removes the photoresist from the underlying substrate containing low k material by exposing the photoresist to the reactive species. The process can be used with carbon and/or hydrogen based low k dielectric materials.