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26 条记录 (耗时 0.025 秒)

    Lithography system and projection method
    1.
    发明申请
    Lithography system and projection method 有权
    光刻系统和投影方法

    公开(公告)号：US20080073588A1

    公开(公告)日：2008-03-27

    申请号：US11716452

    申请日：2007-03-09

    申请人： Pieter Kruit ,  Remco Jager ,  Stijn Willem Steenbrink ,  Marco Wieland

    发明人： Pieter Kruit ,  Remco Jager ,  Stijn Willem Steenbrink ,  Marco Wieland

    IPC分类号： H01J37/08

    CPC分类号： H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/70291 ,  G03F7/70383 ,  G03F7/70508 ,  H01J37/3026 ,  H01J37/3174 ,  H01J2237/31764 ,  H01J2237/31766 ,  H01J2237/31771 ,  H01L21/67282

    摘要： The present invention relates a probe forming lithography system for generating an pattern on to a target surface such as a wafer, using a black and white writing strategy, i.e. writing or not writing a grid cell, thereby dividing said pattern over a grid comprising grid cells, said pattern comprising features of a size larger than that of a grid cell, in each of which cells said probe is switched “on” or “off, wherein a probe on said target covers a significantly larger surface area than a grid cell, and wherein within a feature a position dependent distribution of black and white writings is effected within the range of the probe size as well as to a method upon which such system may be based.

    摘要翻译： 本发明涉及一种探针形成光刻系统，用于使用黑白写入策略（即写入或不写入网格单元）在诸如晶片的目标表面上产生图案，从而在包含网格单元的网格上划分所述图案 所述图案包括尺寸大于网格单元的尺寸的特征，在每个单元中，所述探针被切换为“开”或“关”，其中所述目标上的探针覆盖比网格单元大得多的表面积，以及 其中在特征内，在探针大小的范围以及这种系统可以基于的方法上实现黑白写入的位置相关分布。

    Lithography system, method of heat dissipation and frame
    2.
    发明申请
    Lithography system, method of heat dissipation and frame 有权
    平版印刷系统，散热方法和框架

    公开(公告)号：US20080024743A1

    公开(公告)日：2008-01-31

    申请号：US11880833

    申请日：2007-07-24

    申请人： Pieter Kruit ,  Michel Dansberg ,  Marco Wieland

    发明人： Pieter Kruit ,  Michel Dansberg ,  Marco Wieland

    IPC分类号： G03B27/42

    CPC分类号： G03F7/70875

    摘要： The present invention relates to a lithography system for projecting an image or an image pattern on to a target such as a wafer. Energy that is accumulated in the target by the projection of the image or image pattern is removed from said target, such that expansion by local and/or overall heating is limited to a relevant pre-defined value, and wherein such heat removal is realised by the use of a phase transition in a heat absorbing material that is brought into thermal contact with said target. As a further elaboration, such material may be applied in combination with a further material having a superior coefficient of heat transport, and may be incorporated in an emulsion comprising a material having a superior coefficient of heat transfer. Said material may e.g. be adhered to a bottom face of the target, and may also be included in a frame.

    摘要翻译： 本发明涉及用于将图像或图像图案投影到诸如晶片的靶上的光刻系统。 通过图像或图像图案的投影而累积在目标物中的能量从所述目标去除，使得通过局部和/或整体加热的膨胀被限制到相关的预定义值，并且其中这种除热由 在与所述靶导致热接触的吸热材料中使用相变。 作为进一步的阐述，这种材料可以与具有优异传热系数的另外的材料结合使用，并且可以结合在包含具有优良传热系数的材料的乳液中。 所述材料可以例如 粘附到目标的底面，并且也可以包括在框架中。

    Electron beam exposure system
    3.
    发明申请
    Electron beam exposure system 有权
    电子束曝光系统

    公开(公告)号：US20050211921A1

    公开(公告)日：2005-09-29

    申请号：US11128512

    申请日：2005-05-12

    申请人： Marco Wieland ,  Bert Kampherbeek ,  Alexander Vincent van Veen ,  Pieter Kruit

    发明人： Marco Wieland ,  Bert Kampherbeek ,  Alexander Vincent van Veen ,  Pieter Kruit

    IPC分类号： A61N5/00 ,  G01Q30/02 ,  G01Q30/08 ,  G03B1/00 ,  H01J37/08 ,  H01J37/30 ,  H01J37/304 ,  H01J37/317

    CPC分类号： H01J3/02 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/06 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/06308 ,  H01J2237/06375 ,  H01J2237/3045

    摘要： The invention relates to an electron beam exposure apparatus for transferring a pattern onto the surface of a target, comprising: a beamlet generator for generating a plurality of electron beamlets; a modulation array for receiving said plurality of electron beamlets, comprising a plurality of modulators for modulating the intensity of an electron beamlet; a controller, connected to the modulation array for individually controlling the modulators, an adjustor, operationally connected to each modulator, for individually adjusting the control signal of each modulator; a focusing electron optical system comprising an array of electrostatic lenses wherein each lens focuses a corresponding individual beamlet, which is transmitted by said modulation array, to a cross section smaller than 300 nm, and a target holder for holding a target with its exposure surface onto which the pattern is to be transferred in the first focal plane of the focusing electron optical system.

    摘要翻译： 本发明涉及一种用于将图案转印到目标表面上的电子束曝光装置，包括：用于产生多个电子束的小波发生器; 用于接收所述多个电子子束的调制阵列，包括用于调制电子束的强度的多个调制器; 连接到用于单独控制调制器的调制阵列的控制器，可操作地连接到每个调制器的调节器，用于单独调整每个调制器的控制信号; 一种聚焦电子光学系统，包括静电透镜阵列，其中每个透镜将由所述调制阵列传输的相应单独的子束聚焦成小于300nm的横截面，以及用于将其曝光表面保持在其上的靶保持器 其图案将在聚焦电子光学系统的第一焦平面中转印。

    Charged particle beamlet exposure system
    4.
    发明申请
    Charged particle beamlet exposure system 失效
    带电粒子射束曝光系统

    公开(公告)号：US20050161621A1

    公开(公告)日：2005-07-28

    申请号：US10856050

    申请日：2004-05-27

    申请人： Marco Wieland ,  Pieter Kruit

    发明人： Marco Wieland ,  Pieter Kruit

    IPC分类号： H01J37/08 ,  H01J37/30 ,  H01J37/317

    CPC分类号： H01J37/3007 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/045 ,  H01J37/3174 ,  H01J37/3177 ,  H01J2237/0435 ,  H01J2237/045 ,  H01J2237/0453 ,  H01J2237/0492 ,  H01J2237/1501

    摘要： The invention relates to a charged-particle-optical system for a charged particle beam exposure apparatus, said system comprising: a first aperture means comprising at least a first substantially round aperture for partially shielding an emitted charged particle beam for forming a charged particle beamlet; a lens system comprising at least one lens for focussing a charged particle beamlet from said first aperture within or in the vicinity of an image focal plane of said lens; a deflector means, substantially located in said image focal plane, comprising at least one beamlet deflector for the deflection of a passing charged particle beamlet upon the reception of a control signal, and a second aperture means comprising at least one second substantially round aperture positioned in the conjugate plane of the first aperture, and said second aperture being aligned with said first aperture and said beamlet deflector for blocking said charged particle beamlet upon deflection by said beamlet deflector and to transmit it otherwise.

    摘要翻译： 本发明涉及一种用于带电粒子束曝光装置的带电粒子光学系统，所述系统包括：第一孔装置，包括至少第一基本上圆形的孔，用于部分屏蔽发射的带电粒子束以形成带电粒子子束; 透镜系统，包括至少一个透镜，用于聚焦所述透镜的图像焦平面内或附近的来自所述第一孔的带电粒子束; 基本上位于所述图像焦平面中的偏转器装置包括至少一个子束偏转器，用于在接收到控制信号时偏转通过的带电粒子子束;以及第二孔装置，包括至少一个第二基本圆形的孔， 所述第一孔的共轭平面和所述第二孔与所述第一孔和所述子束偏转器对准，用于在由所述小梁偏转器偏转时阻挡所述带电粒子子束，否则传递。

    Reliability in a maskless lithography system
    5.
    发明申请
    Reliability in a maskless lithography system 有权
    无掩模光刻系统的可靠性

    公开(公告)号：US20070029507A1

    公开(公告)日：2007-02-08

    申请号：US11492572

    申请日：2006-07-24

    申请人： Stijn Karel Steenbrink ,  Pieter Kruit ,  Marco Wieland

    发明人： Stijn Karel Steenbrink ,  Pieter Kruit ,  Marco Wieland

    IPC分类号： H01J37/08

    CPC分类号： H01J37/3177 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/70291 ,  G03F7/70425 ,  H01J2237/31757

    摘要： The invention pertains to a maskless lithography system for transferring a pattern onto a surface of a target, comprising at least one beamlet optical unit for generating a plurality of beamlets, at least one measuring unit for measuring properties of each beamlet, at least one control unit for generating and delivering pattern data to said beamlet optical unit, said control unit being operationally coupled to said measuring unit for identifying invalid beamlets which have a measured property value outside a predefined range of values for said property at least one actuator for inducing a shift of said beamlet optical unit and said target with respect to one another, wherein said actuator is operationally coupled with said control unit, said control unit determining said shift, positioning valid beamlets at the position of said invalid beamlets, thus replacing said invalid beamlets with valid beamlets.

    摘要翻译： 本发明涉及一种用于将图案转印到目标表面上的无掩模光刻系统，包括至少一个用于产生多个子束的子束光学单元，至少一个用于测量每个子束的性质的测量单元，至少一个控制单元 用于生成和传送图案数据到所述子束光学单元，所述控制单元可操作地耦合到所述测量单元，用于识别无效子束，所述无效子束具有超出所述属性的预定范围值的测量属性值，所述至少一个致动器用于引导移位 所述小梁光学单元和所述目标相对于彼此，其中所述致动器与所述控制单元可操作地耦合，所述控制单元确定所述移位，将有效子波束定位在所述无效小波束的位置处，由此用有效的小波束代替所述无效小波束 。

    Modulator circuitry
    9.
    发明申请
    Modulator circuitry 失效
    调制器电路

    公开(公告)号：US20050062950A1

    公开(公告)日：2005-03-24

    申请号：US10909167

    申请日：2004-07-29

    申请人： Johannes van 't Spijker ,  Marco Wieland ,  Ernst Habekotte ,  Floris van der Wilt

    发明人： Johannes van 't Spijker ,  Marco Wieland ,  Ernst Habekotte ,  Floris van der Wilt

    IPC分类号： G02B26/00 ,  G02F1/01 ,  G03B27/42 ,  G03F7/20 ,  G21K5/10 ,  H01J37/08 ,  H01J37/317

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F7/70291 ,  G03F7/70383 ,  H01J37/3177 ,  H01J2237/0435

    摘要： The invention relates to a modulator for modulating the magnitude of a beamlet in a multi-beamlet lithography system, said modulator comprising at least one means for influencing the direction of a beamlet, a light sensitive element for receiving light from a modulated light beam and converting said light into a signal, and discretizing means, coupling to said light sensitive element and to at least one of means for influencing, for converting said signal received from said light sensitive element into a discrete signal having discrete values selected from a set of predefined discrete values and providing said discrete signal to said means for influencing.

    摘要翻译： 本发明涉及一种用于调制多子束光刻系统中的子束幅度的调制器，所述调制器包括至少一个影响子束方向的装置，用于接收来自调制光束的光的光敏元件和转换器 将所述光转换为信号，以及离散化装置，耦合到所述光敏元件和至少一个用于影响从所述光敏元件接收的信号转换成具有从一组预定离散值中选择的离散值的离散信号的装置 值，并将所述离散信号提供给所述用于影响的装置。