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    Raman spectroscopy as integrated chemical metrology
    1.
    发明授权
    Raman spectroscopy as integrated chemical metrology 失效
    拉曼光谱作为综合化学计量学

    公开(公告)号：US07542132B2

    公开(公告)日：2009-06-02

    申请号：US11830202

    申请日：2007-07-30

    申请人： Hongbin Fang ,  Josh Golden ,  Timothy W. Weidman ,  Yaxin Wang ,  Arulkumar Shanmugasundram

    发明人： Hongbin Fang ,  Josh Golden ,  Timothy W. Weidman ,  Yaxin Wang ,  Arulkumar Shanmugasundram

    IPC分类号： G01J3/44 ,  G01N21/65

    CPC分类号： G01N21/65

    摘要： A method for measuring the concentration of the metal solution and reducing agent solution within the electroless plating solution is disclosed. Raman spectroscopy is used to measure the concentration of each solution within the electroless plating solution after they have been mixed together. By measuring the concentration of each solution prior to providing the solution to a plating cell, the concentration of the individual solutions can be adjusted so that the targeted concentration of each solution is achieved. Additionally, each solution can be individually analyzed using Raman spectroscopy prior to mixing with the other solutions. Based upon the Raman spectroscopy measurements of the individual solutions prior to mixing, the individual components that make up each solution can be adjusted prior to mixing so that the targeted component concentration can be achieved.

    摘要翻译： 公开了一种用于测量化学镀溶液中的金属溶液和还原剂溶液的浓度的方法。 拉曼光谱法用于测量化学镀溶液混合在一起后每种溶液的浓度。 通过在将溶液提供给电镀池之前测量每种溶液的浓度，可以调节各溶液的浓度，从而实现每种溶液的目标浓度。 此外，每个溶液可以在与其他溶液混合之前使用拉曼光谱单独分析。 基于混合前单个溶液的拉曼光谱测量，可以在混合之前调整组成每种溶液的各个组分，从而可以实现目标组分浓度。

    RAMAN SPECTROSCOPY AS INTEGRATED CHEMICAL METROLOGY
    2.
    发明申请
    RAMAN SPECTROSCOPY AS INTEGRATED CHEMICAL METROLOGY 失效
    拉曼光谱作为一体化学计量学

    公开(公告)号：US20080024762A1

    公开(公告)日：2008-01-31

    申请号：US11830202

    申请日：2007-07-30

    申请人： HONGBIN FANG ,  Josh Golden ,  Timothy Weidman ,  Yaxin Wang ,  Arulkumar Shanmugasundram

    发明人： HONGBIN FANG ,  Josh Golden ,  Timothy Weidman ,  Yaxin Wang ,  Arulkumar Shanmugasundram

    IPC分类号： G01N21/00

    CPC分类号： G01N21/65

    摘要： A method for measuring the concentration of the metal solution and reducing agent solution within the electroless plating solution is disclosed. Raman spectroscopy is used to measure the concentration of each solution within the electroless plating solution after they have been mixed together. By measuring the concentration of each solution prior to providing the solution to a plating cell, the concentration of the individual solutions can be adjusted so that the targeted concentration of each solution is achieved. Additionally, each solution can be individually analyzed using Raman spectroscopy prior to mixing with the other solutions. Based upon the Raman spectroscopy measurements of the individual solutions prior to mixing, the individual components that make up each solution can be adjusted prior to mixing so that the targeted component concentration can be achieved.

    摘要翻译： 公开了一种用于测量化学镀溶液中的金属溶液和还原剂溶液的浓度的方法。 拉曼光谱法用于测量化学镀溶液混合在一起后每种溶液的浓度。 通过在将溶液提供给电镀池之前测量每种溶液的浓度，可以调节各溶液的浓度，从而实现每种溶液的目标浓度。 此外，每个溶液可以在与其他溶液混合之前使用拉曼光谱单独分析。 基于混合前单个溶液的拉曼光谱测量，可以在混合之前调整组成每种溶液的各个组分，从而可以实现目标组分浓度。

    Electroless deposition process on a silicon contact
    6.
    发明授权
    Electroless deposition process on a silicon contact 有权
    硅触点上的无电沉积工艺

    公开(公告)号：US08308858B2

    公开(公告)日：2012-11-13

    申请号：US12689176

    申请日：2010-01-18

    申请人： Michael P. Stewart ,  Timothy W. Weidman ,  Arulkumar Shanmugasundram ,  David J. Eaglesham

    发明人： Michael P. Stewart ,  Timothy W. Weidman ,  Arulkumar Shanmugasundram ,  David J. Eaglesham

    IPC分类号： C23C18/30 ,  C23C18/36

    CPC分类号： C23C18/1893 ,  B82Y30/00 ,  C23C18/1651 ,  C23C18/32 ,  C23C18/34 ,  H01L21/02063 ,  H01L21/28518 ,  H01L21/288 ,  H01L21/76802 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76847 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76867 ,  H01L21/76874 ,  H01L21/76879 ,  H01L21/76889

    摘要： Embodiments as described herein provide methods for depositing a material on a substrate during electroless deposition processes, as well as compositions of the electroless deposition solutions. In one embodiment, the substrate contains a contact aperture having an exposed silicon contact surface. In another embodiment, the substrate contains a contact aperture having an exposed silicide contact surface. The apertures are filled with a metal contact material by exposing the substrate to an electroless deposition process. The metal contact material may contain a cobalt material, a nickel material, or alloys thereof. Prior to filling the apertures, the substrate may be exposed to a variety of pretreatment processes, such as preclean processes and activations processes. A preclean process may remove organic residues, native oxides, and other contaminants during a wet clean process or a plasma etch process. Embodiments of the process also provide the deposition of additional layers, such as a capping layer.

    摘要翻译： 本文所述的实施方案提供了在无电沉积工艺期间在基材上沉积材料的方法以及无电沉积溶液的组合物。 在一个实施例中，衬底包含具有暴露的硅接触表面的接触孔。 在另一个实施例中，衬底包含具有暴露的硅化物接触表面的接触孔。 通过将基板暴露于无电镀沉积工艺，用金属接触材料填充孔。 金属接触材料可以包含钴材料，镍材料或其合金。 在填充孔之前，衬底可以暴露于各种预处理工艺，例如预清洗工艺和激活工艺。 预清洗方法可以在湿式清洁工艺或等离子体蚀刻工艺期间去除有机残余物，天然氧化物和其它污染物。 该方法的实施方案还提供附加层的沉积，例如覆盖层。

    Apparatus for electroless deposition of metals onto semiconductor substrates
    7.
    发明授权
    Apparatus for electroless deposition of metals onto semiconductor substrates 有权
    用于将金属无电沉积到半导体衬底上的装置

    公开(公告)号：US07827930B2

    公开(公告)日：2010-11-09

    申请号：US11043442

    申请日：2005-01-26

    申请人： Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Russell Ellwanger ,  Ian A. Pancham ,  Ramakrishna Cheboli ,  Timothy W. Weidman

    发明人： Dmitry Lubomirsky ,  Arulkumar Shanmugasundram ,  Russell Ellwanger ,  Ian A. Pancham ,  Ramakrishna Cheboli ,  Timothy W. Weidman

    IPC分类号： B05C3/02

    CPC分类号： H01L21/67155 ,  C23C18/1628 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/6723

    摘要： An electroless deposition system is provided. The system includes a processing mainframe, at least one substrate cleaning station positioned on the mainframe, and an electroless deposition station positioned on the mainframe. The electroless deposition station includes an environmentally controlled processing enclosure, a first processing station configured to clean and activate a surface of a substrate, a second processing station configured to electrolessly deposit a layer onto the surface of the substrate, and a substrate transfer shuttle positioned to transfer substrates between the first and second processing stations. The system also includes a substrate transfer robot positioned on the mainframe and configured to access an interior of the processing enclosure. The system also includes a substrate a fluid delivery system that is configured to deliver a processing fluid by use of a spraying process to a substrate mounted in the processing enclosure.

    摘要翻译： 提供无电沉积系统。 该系统包括处理主机，位于主机上的至少一个基板清洗台和位于主机上的无电沉积站。 无电沉积站包括环境受控的处理外壳，被配置为清洁和激活基板的表面的第一处理站，被配置为将层无电沉积到基板的表面上的第二处理站，以及位于 在第一和第二处理站之间传送衬底。 该系统还包括位于主机上并被配置为访问处理外壳内部的基板传送机器人。 该系统还包括一个流体输送系统，该流体输送系统被配置成通过使用喷射过程将处理流体输送到安装在处理外壳中的基板。

    PROCESS FOR ELECTROLESS COPPER DEPOSITION ON A RUTHENIUM SEED
    9.
    发明申请
    PROCESS FOR ELECTROLESS COPPER DEPOSITION ON A RUTHENIUM SEED 审中-公开
    电镀铜沉积方法

    公开(公告)号：US20120315756A1

    公开(公告)日：2012-12-13

    申请号：US13421434

    申请日：2012-03-15

    申请人： Timothy W. Weidman ,  Arulkumar Shanmugasundram ,  Kapila Wijekoon ,  Schubert S. Chu ,  Frederick C. Wu ,  Kavita Shah

    发明人： Timothy W. Weidman ,  Arulkumar Shanmugasundram ,  Kapila Wijekoon ,  Schubert S. Chu ,  Frederick C. Wu ,  Kavita Shah

    IPC分类号： H01L21/768

    CPC分类号： C23C18/40 ,  C23C18/1608 ,  C23C18/165 ,  H01L21/288 ,  H01L21/76802 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76849 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76877

    摘要： Embodiments of the invention provide methods for forming conductive materials within contact features on a substrate by depositing a seed layer within a feature and subsequently filling the feature with a copper-containing material during an electroless deposition process. In one example, a copper electroless deposition solution contains levelers to form convexed or concaved copper surfaces. In another example, a seed layer is selectively deposited on the bottom surface of the aperture while leaving the sidewalls substantially free of the seed material during a collimated PVD process. In another example, the seed layer is conformably deposited by a PVD process and subsequently, a portion of the seed layer and the underlayer are plasma etched to expose an underlying contact surface. In another example, a ruthenium seed layer is formed on an exposed contact surface by an ALD process utilizing the chemical precursor ruthenium tetroxide.

    摘要翻译： 本发明的实施例提供了通过在特征内沉积种子层并随后在无电沉积工艺期间用含铜材料填充该特征而在基底上的接触特征内形成导电材料的方法。 在一个实例中，铜无电解沉积溶液含有形成凸形或凹陷铜表面的矫直机。 在另一个实例中，在准直的PVD工艺期间，将籽晶层选择性地沉积在孔的底表面上，同时留下基本上不含种子材料的侧壁。 在另一个实例中，种子层通过PVD工艺顺应地沉积，随后种子层和底层的一部分被等离子体蚀刻以暴露下面的接触表面。 在另一个实例中，通过使用化学前体四氧化钌的ALD工艺在暴露的接触表面上形成钌籽晶层。

    Electroless deposition process on a silicon contact
    10.
    发明授权
    Electroless deposition process on a silicon contact 有权
    硅触点上的无电沉积工艺

    公开(公告)号：US07659203B2

    公开(公告)日：2010-02-09

    申请号：US11385043

    申请日：2006-03-20

    申请人： Michael P. Stewart ,  Timothy W. Weidman ,  Arulkumar Shanmugasundram ,  David J. Eaglesham

    发明人： Michael P. Stewart ,  Timothy W. Weidman ,  Arulkumar Shanmugasundram ,  David J. Eaglesham

    IPC分类号： H01L21/44

    CPC分类号： C23C18/1893 ,  B82Y30/00 ,  C23C18/1651 ,  C23C18/32 ,  C23C18/34 ,  H01L21/02063 ,  H01L21/28518 ,  H01L21/288 ,  H01L21/76802 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76847 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76867 ,  H01L21/76874 ,  H01L21/76879 ,  H01L21/76889

    摘要： Embodiments as described herein provide methods for depositing a material on a substrate during electroless deposition processes, as well as compositions of the electroless deposition solutions. In one embodiment, the substrate contains a contact aperture having an exposed silicon contact surface. In another embodiment, the substrate contains a contact aperture having an exposed silicide contact surface. The apertures are filled with a metal contact material by exposing the substrate to an electroless deposition process. The metal contact material may contain a cobalt material, a nickel material, or alloys thereof. Prior to filling the apertures, the substrate may be exposed to a variety of pretreatment processes, such as preclean processes and activations processes. A preclean process may remove organic residues, native oxides, and other contaminants during a wet clean process or a plasma etch process. Embodiments of the process also provide the deposition of additional layers, such as a capping layer.

    摘要翻译： 本文所述的实施方案提供了在无电沉积工艺期间在基材上沉积材料的方法以及无电沉积溶液的组合物。 在一个实施例中，衬底包含具有暴露的硅接触表面的接触孔。 在另一个实施例中，衬底包含具有暴露的硅化物接触表面的接触孔。 通过将基板暴露于无电镀沉积工艺，用金属接触材料填充孔。 金属接触材料可以包含钴材料，镍材料或其合金。 在填充孔之前，衬底可以暴露于各种预处理工艺，例如预清洗工艺和激活工艺。 预清洗方法可以在湿式清洁工艺或等离子体蚀刻工艺期间去除有机残余物，天然氧化物和其它污染物。 该方法的实施方案还提供附加层的沉积，例如覆盖层。