公开(公告)号：US20210391249A1

公开(公告)日：2021-12-16

申请号：US17081720

申请日：2020-10-27

Applicant: QUALCOMM Incorporated

Inventor： Ramaprasath VILANGUDIPITCHAI ,  Gudoor REDDY ,  Samrat SINHAROY ,  Smeeta HEGGOND ,  Anil Kumar KODURU ,  Kamesh MEDISETTI ,  Seung Hyuk KANG

IPC: H01L23/522 ,  H01L27/02

Abstract: A cell on an IC includes a first set of Mx layer interconnects coupled to a first voltage, a second set of Mx layer interconnects coupled to a second voltage different than the first voltage, and a MIM capacitor structure below the Mx layer. The MIM capacitor structure includes a CTM, a CBM, and an insulator between portions of the CTM and the CBM. The first set of Mx layer interconnects is coupled to the CTM. The second set of Mx layer interconnects is coupled to the CBM. The MIM capacitor structure is between the Mx layer and an Mx-1 layer. The MIM capacitor structure includes a plurality of openings. The MIM capacitor structure is continuous within the cell and extends to at least two edges of the cell. In one configuration, the MIM capacitor structure extends to each edge of the cell.

公开(公告)号：US20250072110A1

公开(公告)日：2025-02-27

申请号：US18454376

申请日：2023-08-23

Applicant: QUALCOMM Incorporated

Inventor： Kamesh MEDISETTI ,  Sharad Kumar GUPTA ,  Sudesh Chandra SRIVASTAVA ,  Somesh AGARWAL ,  Udayakiran Kumar YALLAMARAJU ,  Anand Ashok BALIGATTI ,  Girish T P ,  Ankur MEHROTRA ,  Gousulu KANDUKURU ,  Abhinav CHAUHAN ,  Amit KASHYAP ,  Parissa NAJDESAMII

IPC: H01L27/118

Abstract: A chip includes a merger cell including a first p-type length of diffusion (LOD) region extending in a first direction, a first n-well underneath the first p-type LOD region, a first supply rail configured to receive a first supply voltage, and a first n-tap coupling the first n-well to the first supply rail. The merger cell also includes a second p-type length of diffusion (LOD) region extending in the first direction, a second n-well underneath the second p-type LOD region, a second supply rail configured to receive a second supply voltage different from the first supply voltage, and a second n-tap coupling the second n-well to the second supply rail.

公开(公告)号：US20240038760A1

公开(公告)日：2024-02-01

申请号：US17878825

申请日：2022-08-01

Applicant: QUALCOMM Incorporated

Inventor： Manjanaika CHANDRANAIKA ,  Parissa NAJDESAMII ,  Kamesh MEDISETTI ,  Iranagouda Shivanagouda NAGANAGOUDRA

IPC: H01L27/092 ,  H01L23/528

CPC classification number: H01L27/092 ,  H01L23/5286 ,  H04B1/40

Abstract: An integrated circuit (IC), including a first row of cells including a first set of one or more complementary metal oxide semiconductor (CMOS) signal processing cells including a first diffusion region; a second row of cells including a second set of one or more CMOS signal processing cells including a second diffusion region; and a first body tie electrically coupling a first voltage rail to the first and second diffusion regions.

公开(公告)号：US20240249056A1

公开(公告)日：2024-07-25

申请号：US18156999

申请日：2023-01-19

Applicant: QUALCOMM Incorporated

Inventor： Hyeokjin LIM ,  Ankur MEHROTRA ,  Renukprasad HIREMATH ,  Foua VANG ,  Manjanaika CHANDRANAIKA ,  Akhtar ALAM ,  Kamesh MEDISETTI ,  Seung Hyuk KANG ,  Venugopal BOYNAPALLI

IPC: G06F30/392 ,  H01L21/768 ,  H01L23/48 ,  H01L23/498 ,  H01L23/528 ,  H01L27/02

CPC classification number: G06F30/392 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/49827 ,  H01L23/5286 ,  H01L27/0207

Abstract: A chip includes a spare cell including a first active region, and a first gate extending over the first active region in a first direction. The chip also includes a tie cell including a second active region, a second gate extending over the second active region in the first direction, a first drain contact formed over the second active region, a first source contact formed over the second active region, wherein the second gate is between the first drain contact and the first source contact, and first source contact is coupled to a first rail, and a circuit configured to couple the second gate to a second rail. The chip also includes a metal routing extending in a second direction, wherein the second direction is perpendicular to the first direction, and the first metal routing is coupled to the first drain contact and the first gate.

公开(公告)号：US20180211957A1

公开(公告)日：2018-07-26

申请号：US15927539

申请日：2018-03-21

Applicant: QUALCOMM Incorporated

Inventor： Seid Hadi RASOULI ,  Michael BRUNOLLI ,  Christine HAU-RIEGE ,  Mickael Sebtastien Alain MALABRY ,  Sucheta Kumar HARISH ,  Prathiba BALASUBRAMANIAN ,  Kamesh MEDISETTI ,  Nikolay BOMSHTEIN ,  Animesh DATTA ,  Ohsang KWON

IPC: H01L27/092 ,  H01L27/02

CPC classification number: H01L27/0921 ,  H01L21/823871 ,  H01L23/4824 ,  H01L23/522 ,  H01L23/528 ,  H01L27/0207 ,  H01L27/092 ,  H01L2924/0002 ,  H03K17/168 ,  H03K17/6872 ,  H01L2924/00

Abstract: A CMOS device with a plurality of PMOS transistors and a plurality of NMOS transistors includes a first interconnect and a second interconnect on an interconnect level connecting a first subset and a second subset of PMOS drains together, respectively. The first and second subsets are different and the first and second interconnect are disconnected on the interconnect level. A third interconnect and a fourth interconnect on the interconnect level connect a first subset and a second subset of the NMOS drains together, respectively. The third interconnect and the fourth interconnect are disconnected on the interconnect level. The first, second, third, fourth interconnects are coupled together through at least one other interconnect level. Additional interconnects on the interconnect level connect the first and third interconnects together, and the second and fourth interconnects together, to provide parallel current paths with a current path through the at least one other interconnect level.

公开(公告)号：US20240170488A1

公开(公告)日：2024-05-23

申请号：US17993594

申请日：2022-11-23

Applicant: QUALCOMM Incorporated

Inventor： Renukprasad HIREMATH ,  Keyurkumar Karsanbhai KANSAGRA ,  Shashikumar GANESH BHAT ,  Hyeokjin LIM ,  Seung Hyuk KANG ,  Venugopal BOYNAPALLI ,  Kamesh MEDISETTI

IPC: H01L27/118 ,  H03K19/094

CPC classification number: H01L27/11807 ,  H03K19/094 ,  H01L2027/11866 ,  H01L2027/11875 ,  H01L2027/11881 ,  H01L2027/11885

Abstract: An integrated circuit (IC) cell including: a first logic gate comprising a first polysilicon structure and a first pin; a second logic gate comprising a second polysilicon structure and a second pin, wherein the second polysilicon structure is spaced apart and adjacent to the first polysilicon structure in a cell row direction; and a source region, common to the first and second logic gates, situated between the first and second polysilicon structures, wherein the first and second pins are on a first metal track directly over the common source region.

公开(公告)号：US20240088014A1

公开(公告)日：2024-03-14

申请号：US17940911

申请日：2022-09-08

Applicant: QUALCOMM Incorporated

Inventor： Keyurkumar Karsanbhai KANSAGRA ,  Manjanaika CHANDRANAIKA ,  Ankit GUPTA ,  Kamesh MEDISETTI ,  Akhtar ALAM

IPC: H01L23/522 ,  H01L23/528

CPC classification number: H01L23/5223 ,  H01L23/5221 ,  H01L23/5286

Abstract: In certain aspects, a chip includes first source/drain contacts formed over a first oxide diffusion (OD), and first gates, wherein each of the first gates is disposed between a respective pair of the first source/drain contacts. The chip also includes a first bridge coupling a first one of the first source/drain contacts, a first one of the first gates, and a second one of the first source/drain contacts. The chip also includes a first metal routing coupled to the first one of the first source/drain contacts, and a second metal routing coupled to the second one of the first source/drain contacts.

公开(公告)号：US20230221789A1

公开(公告)日：2023-07-13

申请号：US18000319

申请日：2021-07-28

Applicant: QUALCOMM Incorporated

Inventor： Giby SAMSON ,  Smeeta HEGGOND ,  Jitu Khushalbhai MISTRY ,  Paras GUPTA ,  Keyurkumar Karsanbhai KANSAGRA ,  Kamesh MEDISETTI ,  Ramaprasath VILANGUDIPITCHAI ,  Arshath SHEEPARAMATTI

IPC: G06F1/3296 ,  G06F1/26 ,  G06F1/3234

CPC classification number: G06F1/3296 ,  G06F1/263 ,  G06F1/3275

Abstract: A system on chip (SOC) comprising: first memory block and a second memory block; a processing unit coupled to the first memory block and the second memory block; a first power multiplexor disposed between the first memory block and the second memory block and coupled to a first power rail configured to provide an operating voltage to both the first memory block and the second memory block; and enable logic circuitry disposed at a periphery of the SOC away from the first memory block and the second memory block, the enable logic being coupled to control terminals of the first power multiplexor.

公开(公告)号：US20200168604A1

公开(公告)日：2020-05-28

申请号：US16777639

申请日：2020-01-30

Applicant: QUALCOMM Incorporated

Inventor： Seid Hadi RASOULI ,  Michael Joseph BRUNOLLI ,  Christine Sung-An HAU-RIEGE ,  Mickael MALABRY ,  Sucheta Kumar HARISH ,  Prathiba BALASUBRAMANIAN ,  Kamesh MEDISETTI ,  Nikolay BOMSHTEIN ,  Animesh DATTA ,  Ohsang KWON

IPC: H01L27/092 ,  H03K17/687 ,  H03K17/16 ,  H01L21/8238 ,  H01L27/02 ,  H01L23/482 ,  H01L23/528

Abstract: A CMOS device with a plurality of PMOS transistors each having a PMOS drain and a plurality of NMOS transistors each having an NMOS drain includes a first interconnect and a second interconnect. The first interconnect is on an interconnect level extending in a length direction to connect the PMOS drains together, and the second interconnect is on the interconnect level extending in the length direction to connect the NMOS drains together. A set of interconnects on at least one additional interconnect level physically couple the first interconnect and the second interconnect to an output of the CMOS device. A third interconnect on the interconnect level extends perpendicular to the length direction and offset from the set of interconnects. The third interconnect is capable of flowing current from the PMOS drains or from the NMOS drains to the output of the CMOS device.

公开(公告)号：US20150054568A1

公开(公告)日：2015-02-26

申请号：US13975185

申请日：2013-08-23

Applicant: QUALCOMM INCORPORATED

Inventor： Seid Hadi RASOULI ,  Michael Joseph BRUNOLLI ,  Christine Sung-An HAU-RIEGE ,  Mickael MALABRY ,  Sucheta Kumar HARISH ,  Prathiba BALASUBRAMANIAN ,  Kamesh MEDISETTI ,  Nikolay BOMSHTEIN ,  Animesh DATTA ,  Ohsang KWON

IPC: H01L27/092 ,  H03K17/687 ,  H03K17/16 ,  H01L21/8238

CPC classification number: H01L27/0921 ,  H01L21/823871 ,  H01L23/4824 ,  H01L23/522 ,  H01L27/0207 ,  H01L27/092 ,  H01L2924/0002 ,  H03K17/168 ,  H03K17/6872 ,  H01L2924/00

Abstract: A CMOS device with a plurality of PMOS transistors each having a PMOS drain and a plurality of NMOS transistors each having an NMOS drain includes a first interconnect on an interconnect level extending in a length direction to connect the PMOS drains together. A second interconnect on the interconnect level extends in the length direction to connect the NMOS drains together. A set of interconnects on at least one additional interconnect level couple the first interconnect and the second interconnect together. A third interconnect on the interconnect level extends perpendicular to the length direction and is offset from the set of interconnects to connect the first interconnect and the second interconnect together.

Abstract translation: 具有多个PMOS晶体管的CMOS器件，每个具有PMOS漏极和多个NMOS晶体管，每个具有NMOS漏极包括在长度方向上延伸的互连级上的第一互连，以将PMOS漏极连接在一起。 互连级上的第二互连在长度方向上延伸以将NMOS漏极连接在一起。 在至少一个附加互连级上的一组互连将第一互连和第二互连耦合在一起。 互连层上的第三互连件垂直于长度方向延伸，并且从互连组中偏移以将第一互连和第二互连连接在一起。