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公开(公告)号:US10451487B1
公开(公告)日:2019-10-22
申请号:US16110367
申请日:2018-08-23
申请人: RAYTHEON COMPANY
摘要: Microbolometer arrays incorporating per-pixel dark reference structures for non-uniformity correction. In one example a thermal imager includes a device substrate, a microbolometer array disposed on the device substrate and including a plurality of detector elements arranged in a two-dimensional array, each detector element including an imaging microbolometer and a reference microbolometer, the imaging microbolometer being configured to receive electromagnetic radiation from a viewed scene and to produce an image signal in response to receiving the electromagnetic radiation, the image signal including a component produced due to thermal noise in the respective detector element, and the reference microbolometer being shielded from receiving the electromagnetic radiation and configured to produce a reference signal indicative of the thermal noise, wherein the thermal imaging device is configured to produce an image of the viewed scene based on a combination of the image signals and the reference signals from the plurality of detector elements.
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公开(公告)号:US20180226309A1
公开(公告)日:2018-08-09
申请号:US15942911
申请日:2018-04-02
申请人: RAYTHEON COMPANY
IPC分类号: H01L23/10 , H01L21/768 , H01L21/52 , H01L27/146 , H01L23/498 , H01L23/26 , B81B7/00 , B81C1/00
CPC分类号: H01L23/10 , B81B7/0038 , B81B2201/0207 , B81C1/00269 , B81C2203/035 , H01L21/52 , H01L21/76841 , H01L23/26 , H01L23/49866 , H01L27/14618 , H01L27/14634 , H01L27/14636 , H01L27/14683 , H01L27/1469 , H01L2224/16 , H01L2924/0002 , H01L2924/00
摘要: An electronic device and methods of manufacture thereof. One or more methods may include providing a lid wafer having a cavity and a surface surrounding the cavity and a device wafer having a detector device and a reference device. In certain examples, a solder barrier layer of titanium material may be deposited onto the surface of the lid wafer. The solder barrier layer of titanium material may further be activated to function as a getter. In various examples, the lid wafer and the device wafer may be bonded together using solder, and the solder barrier layer of titanium material may prevent the solder from contacting the surface of the lid wafer.
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公开(公告)号:US09966320B2
公开(公告)日:2018-05-08
申请号:US15270145
申请日:2016-09-20
申请人: RAYTHEON COMPANY
IPC分类号: H01L23/48 , H01L23/02 , H01L23/10 , H01L23/498 , H01L21/768 , B81B7/00 , H01L23/26 , H01L27/146 , B81C1/00 , H01L21/52
CPC分类号: H01L23/10 , B81B7/0038 , B81B2201/0207 , B81C1/00269 , B81C2203/035 , H01L21/52 , H01L21/76841 , H01L23/26 , H01L23/49866 , H01L27/14618 , H01L27/14634 , H01L27/14636 , H01L27/14683 , H01L27/1469 , H01L2224/16 , H01L2924/0002 , H01L2924/00
摘要: An electronic device and methods of manufacture thereof. One or more methods may include providing a lid wafer having a cavity and a surface surrounding the cavity and a device wafer having a detector device and a reference device. In certain examples, a solder barrier layer of titanium material may be deposited onto the surface of the lid wafer. The solder barrier layer of titanium material may further be activated to function as a getter. In various examples, the lid wafer and the device wafer may be bonded together using solder, and the solder barrier layer of titanium material may prevent the solder from contacting the surface of the lid wafer.
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公开(公告)号:US09865519B2
公开(公告)日:2018-01-09
申请号:US15402329
申请日:2017-01-10
申请人: RAYTHEON COMPANY
发明人: Stephen H. Black , Adam M. Kennedy
CPC分类号: H01L23/26 , H01L21/3221 , H01L21/3225 , H01L21/4817 , H01L21/54 , H01L23/041 , H01L23/10
摘要: A system and method for forming a wafer level package. In one example, a substrate used in the wafer level package includes a surface defined by a wafer level package (WLP) region and an external region, and a layer of getter material is disposed on at least a portion of the external region. According to one embodiment, the external region comprises a saw-to-reveal (STR) region of the wafer.
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公开(公告)号:US09570321B1
公开(公告)日:2017-02-14
申请号:US14887544
申请日:2015-10-20
申请人: RAYTHEON COMPANY
发明人: Stephen H. Black , Adam M. Kennedy
IPC分类号: H01L21/322 , H01L23/26 , H01L23/544
CPC分类号: H01L23/26 , H01L21/3221 , H01L21/3225 , H01L21/4817 , H01L21/54 , H01L23/041 , H01L23/10
摘要: A system and method for forming a wafer level package. In one example, a substrate used in the wafer level package includes a surface defined by a wafer level package (WLP) region and an external region, and a layer of getter material is disposed on at least a portion of the external region. According to one embodiment, the external region comprises a saw-to-reveal (STR) region of the wafer.
摘要翻译: 一种用于形成晶片级封装的系统和方法。 在一个示例中,用于晶片级封装的衬底包括由晶片级封装(WLP)区域和外部区域限定的表面,并且吸收材料层设置在外部区域的至少一部分上。 根据一个实施例,外部区域包括晶片的锯切(STR)区域。
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公开(公告)号:US09174836B2
公开(公告)日:2015-11-03
申请号:US14456156
申请日:2014-08-11
申请人: Raytheon Company
IPC分类号: H01L23/12 , B81B7/00 , B81C1/00 , H01L23/053 , H01L23/00
CPC分类号: B81B7/0041 , B81B7/007 , B81C1/00269 , B81C2203/019 , H01L23/053 , H01L24/27 , H01L24/29 , H01L24/83 , H01L2224/27444 , H01L2224/27462 , H01L2224/27464 , H01L2224/29011 , H01L2224/291 , H01L2224/83001 , H01L2224/83007 , H01L2224/83139 , H01L2224/8314 , H01L2224/83141 , H01L2224/83192 , H01L2924/1461 , H01L2924/163 , H01L2924/00014 , H01L2924/014
摘要: A method of forming a wafer level packaged circuit device includes forming a device wafer, the device wafer including a first group of one or more material layers left remaining in a first region of a substrate of the device wafer; and forming a cap wafer configured to be attached to the device wafer, the cap wafer including a second group of one or more material layers left remaining in a second region of a substrate of the cap wafer; wherein a combined thickness of the first and second groups of one or more material layers defines an integrated bond gap control structure upon bonding of the device wafer and the cap wafer.
摘要翻译: 一种形成晶片级封装电路器件的方法包括形成器件晶片,器件晶片包括残留在器件晶片的衬底的第一区域中的第一组一个或多个材料层; 以及形成被配置为附接到所述器件晶片的盖晶片,所述盖晶片包括留在所述盖晶片的衬底的第二区域中的第二组一个或多个材料层; 其中一个或多个材料层的所述第一和第二组的组合厚度在所述器件晶片和所述盖晶片接合时限定了整合的接合间隙控制结构。
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公开(公告)号:US20150162479A1
公开(公告)日:2015-06-11
申请号:US14100048
申请日:2013-12-09
申请人: Raytheon Company
IPC分类号: H01L31/18 , H01L31/0232
CPC分类号: H01L31/18 , B81C1/00373 , B81C2201/0188 , H01L31/02327
摘要: A method for forming a coating of material on selected portions of a surface of a substrate having a plurality of cavities, each cavity having outer, peripheral sidewalls extending outwardly from the surface. The method includes: providing a structure having a release agent thereon; contacting top surface of the wafer with the release agent to transfer portions of the release agent to the top surface of the wafer while bottom portions of the cavities remain spaced from the release agent to produce an intermediate structure; the release agent disposed on the top surface of the wafer and with the bottom portions of the cavities void of the release agent; exposing the intermediate structure to the material to blanket coat the material on both the release agent and the bottom portions of the cavities; and selectively removing the release agent together with the coating material while leaving the coating material on the bottom portions of the cavities.
摘要翻译: 一种用于在具有多个空腔的基板的表面的选定部分上形成材料涂层的方法,每个空腔具有从表面向外延伸的外部周边侧壁。 该方法包括:提供其上具有脱模剂的结构; 使所述晶片的顶表面与所述脱模剂接触以将所述脱模剂的部分转移到所述晶片的顶表面,同时所述空腔的底部保持与所述脱模剂间隔开以产生中间结构; 所述脱模剂设置在所述晶片的顶表面上,并且所述空腔的底部部分脱离所述脱模剂; 将所述中间结构暴露于所述材料以在所述空腔的所述脱模剂和所述底部两者上均匀地涂覆所述材料; 并且与涂料一起选择性地除去脱模剂,同时将涂料留在空腔的底部。
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公开(公告)号:US20210377470A1
公开(公告)日:2021-12-02
申请号:US16890483
申请日:2020-06-02
申请人: Raytheon Company
发明人: Neil R. Malone , Micky Harris , Adam M. Kennedy , George Paloczi , John L. Vampola , Christian M. Boemler
IPC分类号: H04N5/355 , H04N5/378 , H04N5/3745
摘要: A digital pixel includes a capacitive transimpedence amplifier (CTIA) coupled to a photodiode that receives an electrical charge and output an integration voltage. An integration capacitor coupled to the CTIA accumulates the integration voltage over an integration period. A comparator compares the accumulated integration voltage with a threshold voltage and generates a control signal at a first level each time the accumulated integration voltage is greater than the threshold voltage. A charge subtraction circuit receives the control signal at the first level and discharges the accumulated integration voltage each time the control signal at the first level is received from the comparator. An analog or digital counter receives the control signal at the first level and adjusts a counter value each time the control signal is received from the comparator. An output interface communicates the counter value to an image processing circuit at an end of the integration period.
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公开(公告)号:US10315918B2
公开(公告)日:2019-06-11
申请号:US15227181
申请日:2016-08-03
申请人: RAYTHEON COMPANY
摘要: Methods for reducing wafer bow induced by an anti-reflective coating of a cap wafer are provided. The method may utilize a shadow mask having at least one opening therein that is positioned opposite recessed regions in a cap wafer. The method may further include depositing at least one layer of an anti-reflective coating material through the shadow mask onto a planar side of a cap wafer to provide a discontinuous coating on the planar side.
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公开(公告)号:US20160376146A1
公开(公告)日:2016-12-29
申请号:US14748482
申请日:2015-06-24
申请人: Raytheon Company
发明人: Buu Q. Diep , Adam M. Kennedy , Thomas Allan Kocian , Mark Lamb
CPC分类号: B81B7/0058 , B81B7/0041 , B81B2201/0207 , B81B2201/04 , B81C1/00269 , B81C1/00317 , B81C2203/0109 , B81C2203/0118 , B81C2203/0145 , B81C2203/019
摘要: A microelectromechanical systems (MEMS) package includes a substrate extending between a first pair of outer edges to define a length and a second pair of outer edges to define a width. A seal ring assembly is disposed on the substrate and includes at least one seal ring creating a first boundary point adjacent to at least one MEMS device and a second boundary point adjacent at least one of the outer edges. The package further includes a window lid on the seal ring assembly to define a seal gap containing the at least one MEMS device. The seal ring assembly anchors the window lid to the substrate at the second boundary point such that deflection of the window lid into the seal gap is reduced.
摘要翻译: 微机电系统(MEMS)封装包括在第一对外边缘之间延伸以限定长度的基板和限定宽度的第二对外边缘。 密封环组件设置在基板上,并且包括至少一个密封环,其形成与至少一个MEMS装置相邻的第一边界点和邻近至少一个外边缘的第二边界点。 封装还包括在密封环组件上的窗口盖,以限定包含至少一个MEMS器件的密封间隙。 密封圈组件在第二边界点将窗口盖固定到基底,使得窗口盖进入密封间隙的偏转减小。
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