摘要:
Laminated composite (10) comprising at least one electronic substrate (11) and an arrangement of layers (20, 30) made up of at least a first layer (20) of a first metal and/or a first metal alloy and of a second layer (30) of a second metal and/or a second metal alloy adjacent to this first layer (20), wherein the melting temperatures of the first and second layers are different, and wherein, after a thermal treatment of the arrangement of layers (20, 30), a region with at least one intermetallic phase (40) is formed between the first layer and the second layer, wherein the first layer (20) or the second layer (30) is formed by a reaction solder which consists of a mixture of a basic solder with an AgX, CuX or NiX alloy, wherein the component X of the AgX, CuX or NiX alloy is selected from the group consisting of B, Mg, Al, Si, Ca, Se, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Y, Zr, Nb, Mo, Ag, In, Sn, Sb, Ba, Hf, Ta, W, Au, Bi, La, Ce, Pr, Nd, Gd, Dy, Sm, Er, Tb, Eu, Ho, Tm, Yb and Lu and wherein the melting temperature of the AgX, CuX or NiX alloy is greater than the melting temperature of the basic solder. The invention also relates to a method for forming a laminated composite (10) and to a circuit arrangement containing a laminated composite (10) according to the invention.
摘要:
Laminated composite (10) comprising at least one electronic substrate (11) and an arrangement of layers (20, 30) made up of at least a first layer (20) of a first metal and/or a first metal alloy and of a second layer (30) of a second metal and/or a second metal alloy adjacent to this first layer (20), wherein the melting temperatures of the first and second layers are different, and wherein, after a thermal treatment of the arrangement of layers (20, 30), a region with at least one intermetallic phase (40) is formed between the first layer and the second layer, wherein the first layer (20) or the second layer (30) is formed by a reaction solder which consists of a mixture of a basic solder with an AgX, CuX or NiX alloy, wherein the component X of the AgX, CuX or NiX alloy is selected from the group consisting of B, Mg, Al, Si, Ca, Se, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Y, Zr, Nb, Mo, Ag, In, Sn, Sb, Ba, Hf, Ta, W, Au, Bi, La, Ce, Pr, Nd, Gd, Dy, Sm, Er, Tb, Eu, Ho, Tm, Yb and Lu and wherein the melting temperature of the AgX, CuX or NiX alloy is greater than the melting temperature of the basic solder. The invention also relates to a method for forming a laminated composite (10) and to a circuit arrangement containing a laminated composite (10) according to the invention.
摘要:
A commutation cell having at least one electrical capacitor, at least one controllable semiconductor switch and at least one semiconductor which is connected in series with the controllable semiconductor switch. The commutation cell has three circuit substrates situated in parallel with one another. The controllable semiconductor switch is connected in series with the semiconductor via a circuit substrate situated partially between the controllable semiconductor switch and the semiconductor, and the two remaining circuit substrates being connected to one another in an electrically conductive manner via a subassembly made up of the controllable semiconductor switch, the semiconductor and the circuit substrate situated partially between the controllable semiconductor switch and the semiconductor, the electrical capacitor being switched between the two remaining circuit substrates, separately from the subassembly.
摘要:
The invention relates to a method for joining a semiconductor (20) to a substrate (10), comprising the following steps: •applying a first paste layer (1) of a sintering paste to the substrate; •heating and compressing the first paste layer to form a first sintered layer; •applying a second paste layer (2) of a sintering paste to the first sintered layer and arranging a semiconductor (20) on the second paste layer; •heating and compressing the second paste layer (2) to form a second sintered layer. The invention further relates to a semiconductor component produced by means of the method.
摘要:
A commutation cell having at least one electrical capacitor, at least one controllable semiconductor switch and at least one semiconductor which is connected in series with the controllable semiconductor switch. The commutation cell has three circuit substrates situated in parallel with one another. The controllable semiconductor switch is connected in series with the semiconductor via a circuit substrate situated partially between the controllable semiconductor switch and the semiconductor, and the two remaining circuit substrates being connected to one another in an electrically conductive manner via a subassembly made up of the controllable semiconductor switch, the semiconductor and the circuit substrate situated partially between the controllable semiconductor switch and the semiconductor, the electrical capacitor being switched between the two remaining circuit substrates, separately from the subassembly.
摘要:
An electrically conductive contact layer (4) is provided with a joining material (9) during a method for producing a piezoelectric component (1), in particular a piezoelectric sensor (1). To this end, the electrically conductive contact layer (4) can be dipped into a paste that serves to form the joining material (9). The contact layer (4) provided with the joining material (9) is subsequently disposed between a first piezoceramic layer (2) and a second piezoceramic layer (3). The contact layer (4) is then inserted via the joining material (9) between the first piezoceramic layer (2) and the second piezoceramic layer (3), wherein a pressure is applied to the first piezocermaic layer (2) against the second piezoceramic layer (3).
摘要:
The invention relates to a method for connecting at least two components (18, 20) using a sintering process. The aim of the invention is to improve the sintering process. This is achieved in that the method has the following method steps: a) providing a starting material (10) of a sintering compound (22), comprising particles (12) which can be sintered and have at least one metal or at least one metal compound and comprising at least one polymeric, polymerizable, and/or monomeric organic compound (14), wherein the polymeric, polymerizable, and/or monomeric compound (14) has a flow temperature which is higher than or equal to the room temperature and lower than the sintering temperature, and the polymeric, polymerizable, and/or monomeric organic compound (14) further has a desorption temperature which is higher than the flow temperature and lower than or equal to the sintering temperature; b) arranging the starting material (10) between two components (18, 20) to be connected; c) heating the starting material (10) to a temperature (T1) which is higher than or equal to the flow temperature of the polymeric, polymerizable, and/or monomeric organic compound (14) and lower than the desorption temperature of the polymeric, polymerizable, and/or monomeric organic compound (14) for a period of time (t1); and d) heating the starting material (10) to a temperature (T2) which is higher than or equal to the sintering temperature of the particles (12) which can be sintered, optionally under the influence of a sintering pressure, for a period of time (t2), thereby forming a sintering compound (22).
摘要:
The invention relates to a layered composite (10), in particular for connecting electronic components as joining partners, comprising at least one substrate film (11) and a layer assembly (12) applied to the substrate film. The layer assembly comprises at least one sinterable layer (13), which is applied to the substrate film (11) and which contains at least one metal powder, and a solder layer (14) applied to the sinterable layer (13). The invention further relates to a method for forming a layered composite, to a circuit assembly containing a layered composite (10) according to the invention, and to the use of a layered composite (10) in a joining method for electronic components.
摘要:
An electrically conductive contact layer (4) is provided with a joining material (9) during a method for producing a piezoelectric component (1), in particular a piezoelectric sensor (1). To this end, the electrically conductive contact layer (4) can be dipped into a paste that serves to form the joining material (9). The contact layer (4) provided with the joining material (9) is subsequently disposed between a first piezoceramic layer (2) and a second piezoceramic layer (3). The contact layer (4) is then inserted via the joining material (9) between the first piezoceramic layer (2) and the second piezoceramic layer (3), wherein a pressure is applied to the first piezocermaic layer (2) against the second piezoceramic layer (3).