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    Apparatus for supplying CVD coating devices
    3.
    发明授权
    Apparatus for supplying CVD coating devices 失效
    用于提供CVD涂层装置的装置

    公开(公告)号：US5480488A

    公开(公告)日：1996-01-02

    申请号：US141363

    申请日：1993-10-28

    申请人： Hans J. Bittner ,  Hans-Jurgen Klein ,  Thomas Kupper ,  Ewald Morsen

    发明人： Hans J. Bittner ,  Hans-Jurgen Klein ,  Thomas Kupper ,  Ewald Morsen

    IPC分类号： C23C16/448 ,  B05C11/02 ,  B05C11/10 ,  C23C16/52

    CPC分类号： C23C16/448

    摘要： An apparatus supplies CVD coating devices with coating gas and includes an intermediate reservoir for accommodation of the gaseous coating material arranged between a storage tank and a coating device. The volume of the reservoir is set to a predetermined, maximum pressure change in the intermediate reservoir upon withdrawal of the mass of gas required for a coating step. The intermediate reservoir can be connected to a gas recovery station.

    摘要翻译： 一种装置为CVD涂覆装置提供涂覆气体，并且包括用于容纳布置在储罐和涂覆装置之间的气态涂料的中间储存器。 在抽出涂布步骤所需的气体质量时，储存器的体积被设定为中间储存器中预定的最大压力变化。 中间储存器可以连接到气体回收站。

    Gas supply method in a CVD coating system for precursors with a low vapor pressure
    8.
    发明申请
    Gas supply method in a CVD coating system for precursors with a low vapor pressure 有权
    用于具有低蒸气压的前体的CVD涂覆系统中的气体供应方法

    公开(公告)号：US20050132959A1

    公开(公告)日：2005-06-23

    申请号：US11014488

    申请日：2004-12-16

    申请人： Hartmut Bauch ,  Lars Bewig ,  Lutz Klippe ,  Thomas Kupper

    发明人： Hartmut Bauch ,  Lars Bewig ,  Lutz Klippe ,  Thomas Kupper

    IPC分类号： C23C16/448 ,  B01D3/42 ,  B05C11/00 ,  C23C16/00 ,  F25J3/00

    CPC分类号： C23C16/448

    摘要： A gas supply device for delivering precursors with a low vapor pressure to CVD coating systems. The gas supply device has a supply container for the precursor which is at a first temperature T1, an intermediate storage device for intermediately storing the vaporous precursor at a second temperature T2 and at a constant pressure p2, a first gas line between the supply container and the intermediate storage device and a second gas line for removing gas from the intermediate storage device. The gas supply device is developed in such a way that the first temperature T1 is higher than the second temperature T2. The lower temperature T2 of the intermediate storage device facilitates maintenance work on the same, while the precursor evaporates at a greater rate at the higher temperature T1 in the supply container. A first precursor vapor may be mixed with a gas and/or a second precursor vapor in the intermediate storage device. The partial pressure of the first precursor vapor is lower than that of the undiluted first precursor vapor at a constant overall pressure in the intermediate storage device, so that the temperature T2 of the intermediate storage device and the successive lines can be reduced.

    摘要翻译： 一种气体供应装置，用于将CVD蒸气压低的前体输送到CVD涂层系统。 气体供给装置具有用于前体的供给容器，该供应容器处于第一温度T 1，中间储存装置用于在第二温度T 2和恒定压力p 2下将气态前体中间储存在第一温度T 1之间的第一气体管线 供给容器和中间储存装置以及用于从中间储存装置除去气体的第二气体管线。 气体供给装置以第一温度T 1高于第二温度T 2的方式展开。 中间储存装置的较低温度T 2有助于维护工作，而前体在供应容器中的较高温度T 1下以更大的速率蒸发。 第一前体蒸气可以与中间存储装置中的气体和/或第二前体蒸气混合。 在中间储存装置中，在恒定的总体压力下，第一前体蒸气的分压低于未稀释的第一前体蒸汽的分压，从而可以减少中间储存装置的温度T 2和连续的管线。