摘要:
A device for applying a free-flowing medium to a continuously conveyed web, wherein the medium can be transferred to the web by a continuously rotating transfer (gravure) roll. An application head is provided in order to transfer the free-flowing medium to the circumference of the gravure roll. The application head includes a chamber which is open toward the circumference of the gravure roll and has an inlet and an outlet for the medium to be applied. The front outer face, in the direction of rotation, of the chamber is delimited by a front doctor blade and the rear outer face, in the direction of rotation, is delimited by a rear doctor blade. Both doctor blades are seated against the circumference of the gravure roll. The front doctor blade can be pressed against the circumference of the gravure roll by a pressing body with an adjustable pressing force.
摘要:
A device for applying a free-flowing medium to a continuously conveyed web, wherein the medium can be transferred to the web by a continuously rotating transfer (gravure) roll. An application head is provided in order to transfer the free-flowing medium to the circumference of the gravure roll. The application head includes a chamber which is open toward the circumference of the gravure roll and has an inlet and an outlet for the medium to be applied. The front outer face, in the direction of rotation, of the chamber is delimited by a front doctor blade and the rear outer face, in the direction of rotation, is delimited by a rear doctor blade. Both doctor blades are seated against the circumference of the gravure roll. The front doctor blade can be pressed against the circumference of the gravure roll by a pressing body with an adjustable pressing force.
摘要:
Forming amorphous atorvastatin comprises the steps of dissolving atorvastatin in a solvent to form a solution, followed by adding the solution to a mixture comprising a non-solvent and a hydroxylic solvent to afford amorphous atorvastatin.
摘要:
An indirectly heated button cathode for use in the ion source of an ion implanter has a button member formed of a slug piece mounted in a collar piece. The slug piece is thermally insulated from the collar piece to enable it to operate at a higher temperature so that electron emission is enhanced and concentrated over the surface of the slug piece. The slug piece and collar piece can be both of tungsten. Instead the slug piece may be of tantalum to provide a lower thermionic work function. The resultant concentrated plasma in the ion source is effective to enhance the production of higher charge state ions, particularly P+++ for subsequent acceleration for high energy implantation.
摘要:
A process is disclosed for forming a fluoropolymer layer on a thin film device, comprising contacting said thin film device with a gas phase fluoromonomer, and initiating polymerization of said fluoromonomer with a free radical polymerization initiator whereby said fluoromonomer polymerizes to form said fluoropolymer layer on said thin film device.
摘要:
A method of depositing a dielectric film exhibiting a low dielectric constant in a semiconductor and/or integrated circuit by chemical vapor deposition (CVD) is provided. The film is deposited using an organosilicon precursor in a manner such that the film is comprised of a backbone made substantially of Si—O—Si or Si—N—Si groups with organic side groups attached to the backbone.
摘要:
Apparatus for manufacturing blanks from a synthetic plastics material inces a mould cavity defined between a mandrel and an outer mould. A retractable sleeve is slidably mounted on the mandrel and is displaceable within the cavity at a rate which depends on the rate at which the plastics material is injected into the cavity.
摘要:
Various methods and systems for using electrical information for a device being fabricated on a wafer to perform one or more defect-related functions are provided. One computer-implemented method includes using electrical information for a device being fabricated on a wafer to perform one or more defect-related functions. The one or more defect-related functions include one or more post-mask, defect-related functions.
摘要:
A method of depositing a dielectric film exhibiting a low dielectric constant in a semiconductor and/or integrated circuit by chemical vapor deposition (CVD) is provided. The film is deposited using an organosilicon precursor in a manner such that the film is comprised of a backbone made substantially of Si—O—Si or Si—N—Si groups with organic side groups attached to the backbone.
摘要:
A method of depositing a dielectric film exhibiting a low dielectric constant in a semiconductor and/or integrated circuit by chemical vapor deposition (CVD) is provided. The film is deposited using an organosilicon precursor in a manner such that the film is comprised of a backbone made substantially of Si—O—Si or Si—N—Si groups with organic side groups attached to the backbone.