Fluorinated silsesquioxane polymers and use thereof in lithographic photoresist compositions
    2.
    发明授权
    Fluorinated silsesquioxane polymers and use thereof in lithographic photoresist compositions 失效
    氟化倍半硅氧烷聚合物及其在平版光刻胶组合物中的应用

    公开(公告)号:US07550254B2

    公开(公告)日:2009-06-23

    申请号:US11789902

    申请日:2007-04-25

    IPC分类号: G03F7/30 G03F7/075

    摘要: Fluorocarbinol- and/or fluoroacid-functionalized silsesquioxane polymers and copolymers are provided. The polymers are substantially transparent to ultraviolet radiation (UV), i.e., radiation of a wavelength less than 365 nm and are also substantially transparent to deep ultraviolet radiation (DUV), i.e., radiation of a wavelength less than 250 nm, including 157 nm, 193 nm and 248 nm radiation, and are thus useful in single and bilayer, positive and negative, lithographic photoresist compositions, providing improved sensitivity and resolution. A process for using the composition to generate resist images on a substrate is also provided, i.e., in the manufacture of integrated circuits or the like.

    摘要翻译: 提供氟代甲醇和/或氟酸官能化的倍半硅氧烷聚合物和共聚物。 聚合物对紫外线(UV)基本上是透明的,即波长小于365nm的辐射,并且对深紫外辐射(DUV)也是基本透明的,即波长小于250nm(包括157nm)的辐射, 193 nm和248 nm辐射,因此可用于单层和双层,正面和负面,平版印刷光刻胶组合物,提供更高的灵敏度和分辨率。 还提供了使用该组合物在衬底上产生抗蚀剂图像的方法,即在集成电路等的制造中。

    Photoresist composition
    3.
    发明授权
    Photoresist composition 失效
    光刻胶组成

    公开(公告)号:US07014980B2

    公开(公告)日:2006-03-21

    申请号:US10916934

    申请日:2004-08-12

    摘要: A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formula where R1 represents hydrogen (H), a linear or branched alkyl group of 1 to 20 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 20 carbons; and where R2 represents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl (CF3) group attached to each carbon of the substituted aliphatic group, or a substituted or unsubstituted aromatic group; and where R3 represents hydrogen (H), methyl (CH3), trifluoromethyl (CF3), difluoromethyl(CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated aliphatic chain; and where R4 represents trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group. A method of patterning a substrate using the photoresist composition is also provided herein.

    摘要翻译: 提供了一种光致抗蚀剂组合物,其包括具有至少一个具有下式的丙烯酸酯或甲基丙烯酸酯单体的聚合物,其中R 1表示氢(H),1至20个碳的直链或支链烷基或 1至20个碳的半或全氟化直链或支链烷基; 其中R 2表示未取代的脂族基团或具有与取代的脂族基团的每个碳上连接的具有0或1个三氟甲基(CF 3 N 3)基团的取代的脂族基团,或 取代或未取代的芳基; 其中R 3表示氢(H),甲基(CH 3),三氟甲基(CF 3),二氟甲基(CHF 2) (CH 2 CO 2),或半或全氟化脂族链; 并且其中R 4表示三氟甲基(CF 3 S),二氟甲基(CH 2)2,氟甲基(CH 2 CH 2) )或半或全氟取代或未取代的脂族基团。 本文还提供了使用光致抗蚀剂组合物图案化衬底的方法。

    Photoresist composition
    4.
    发明授权
    Photoresist composition 失效
    光刻胶组成

    公开(公告)号:US06806026B2

    公开(公告)日:2004-10-19

    申请号:US10159635

    申请日:2002-05-31

    IPC分类号: G03F7039

    摘要: A photoresist composition is provided that includes a polymer having at least one acrylate or methacrylate monomer having a formula: where R1 represents hydrogen (H), a linear or branched alkyl group of 1 to 20 carbons, or a semi- or perfluorinated linear or branched alkyl group of 1 to 20 carbons; and where R2 represents an unsubstituted aliphatic group or a substituted aliphatic group having zero or one trifluoromethyl (CF3) group attached to each carbon of the substituted aliphatic group, or a substituted or unsubstituted aromatic group; and where R3 represents hydrogen (H), methyl (CH3), trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated aliphatic chain; and where R4 represents trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group. A method of patterning a substrate using the photoresist composition is also provided herein.

    摘要翻译: 提供了一种光致抗蚀剂组合物,其包括具有至少一种具有下式的丙烯酸酯或甲基丙烯酸酯单体的聚合物:其中R 1表示氢(H),1-20个碳的直链或支链烷基,或半或全氟 1〜20个碳原子的直链或支链烷基; 并且其中R 2表示未取代的脂族基团或具有连接在取代的脂族基团的每个碳上的零个或一个三氟甲基(CF 3)基团的取代的脂族基团,或取代或未取代的芳族基团; 并且其中R 3表示氢(H),甲基(CH 3),三氟甲基(CF 3),二氟甲基(CHF 2),氟甲基(CH 2 F)或半或全氟化脂族链; 并且其中R 4表示三氟甲基(CF 3),二氟甲基(CHF 2),氟甲基(CH 2 F)或半或全氟取代或未取代的脂族基团。 本文还提供了使用光致抗蚀剂组合物图案化衬底的方法。

    Fluorinated silsesquioxane polymers and use thereof in lithographic photoresist compositions
    5.
    发明授权
    Fluorinated silsesquioxane polymers and use thereof in lithographic photoresist compositions 有权
    氟化倍半硅氧烷聚合物及其在平版光刻胶组合物中的应用

    公开(公告)号:US07261992B2

    公开(公告)日:2007-08-28

    申请号:US10079289

    申请日:2002-02-19

    IPC分类号: G03F7/038 G03F7/30 G03F7/11

    摘要: Fluorocarbinol- and/or fluoroacid-functionalized silsesquioxane polymers and copolymers are provided. The polymers are substantially transparent to ultraviolet radiation (UV), i.e., radiation of a wavelength less than 365 nm and are also substantially transparent to deep ultraviolet radiation (DUV), i.e., radiation of a wavelength less than 250 nm, including 157 nm, 193 nm and 248 nm radiation, and are thus useful in single and bilayer, positive and negative, lithographic photoresist compositions, providing improved sensitivity and resolution. A process for using the composition to generate resist images on a substrate is also provided, i.e., in the manufacture of integrated circuits or the like.

    摘要翻译: 提供氟代甲醇和/或氟酸官能化的倍半硅氧烷聚合物和共聚物。 聚合物对紫外线(UV)基本上是透明的,即波长小于365nm的辐射,并且对深紫外辐射(DUV)也是基本透明的,即波长小于250nm(包括157nm)的辐射, 193 nm和248 nm辐射,因此可用于单层和双层,正面和负面,平版印刷光刻胶组合物,提供更高的灵敏度和分辨率。 还提供了使用该组合物在衬底上产生抗蚀剂图像的方法,即在集成电路等的制造中。

    POLYMERIC FILMS MADE FROM POLYHEDRAL OLIGOMERIC SILSESQUIOXANE (POSS) AND A HYDROPHILIC COMONOMER
    7.
    发明申请
    POLYMERIC FILMS MADE FROM POLYHEDRAL OLIGOMERIC SILSESQUIOXANE (POSS) AND A HYDROPHILIC COMONOMER 有权
    聚偏氟乙烯(POSS)和亲水性聚合物制成的聚合物薄膜

    公开(公告)号:US20110120940A1

    公开(公告)日:2011-05-26

    申请号:US12624605

    申请日:2009-11-24

    IPC分类号: B01D71/40 C08J7/04

    摘要: A composite membrane includes a filtration membrane and a layer on a surface of the filtration membrane. The layer includes a polymer including a polyhedral oligomeric silsesquioxane (POSS) derivative with a hydrophilic moiety attached to at least one vertex thereof. A method for making a composite membrane includes applying to a surface of a filtration membrane a photopolymerizable composition including a POSS compound, a hydrophilic comonomer, and a photoinitiator. The composition is cured to form a hydrophilic layer on the filtration membrane.

    摘要翻译: 复合膜包括过滤膜和过滤膜表面上的层。 该层包括聚合物,其包括具有连接到其至少一个顶点的亲水部分的多面体低聚倍半硅氧烷(POSS)衍生物。 制造复合膜的方法包括向过滤膜的表面施加包含POSS化合物,亲水性共聚单体和光引发剂的光聚合性组合物。 固化组合物以在过滤膜上形成亲水层。

    Negative resists based on acid-catalyzed elimination of polar molecules
    8.
    发明授权
    Negative resists based on acid-catalyzed elimination of polar molecules 失效
    基于酸催化消除极性分子的负电阻

    公开(公告)号:US07393624B2

    公开(公告)日:2008-07-01

    申请号:US11820862

    申请日:2007-06-20

    IPC分类号: G03C1/00

    摘要: The present invention provides polymers that are useful in negative resist compositions. Polymers of the present invention comprise (1) a first monomer having a polar functional group; (2) a second monomer; and optionally, (3) a third monomer that imparts at least one characteristic selected from crosslinkable functionality, etch resistance, and solubility modulation. The first monomer provides an acid catalyzed polarity switch upon elimination of the polar functional group, whereas, the second monomer provides aqueous dissolution. The polymers of the present invention may be incorporated into negative resist compositions, which may also include photoacid generators, crosslinking agents, basic compounds, solvents, dissolution accelerators, photobase generators, latent basic compounds, surfactants, adhesion promoters, and anti-foaming agents.

    摘要翻译: 本发明提供了可用于负性抗蚀剂组合物的聚合物。 本发明的聚合物包含(1)具有极性官能团的第一单体; (2)第二单体; 和(3)赋予选自可交联官能团,耐蚀刻性和溶解度调制中的至少一种特性的第三单体。 第一单体在消除极性官能团时提供酸催化的极性开关,而第二单体提供水溶解。 本发明的聚合物可以并入负性抗蚀剂组合物,其还可以包括光酸产生剂,交联剂,碱性化合物,溶剂,溶解促进剂,光碱产生剂,潜碱性化合物,表面活性剂,粘合促进剂和消泡剂。

    Lithographic photoresist composition and process for its use in the
manufacture of integrated circuits
    10.
    发明授权
    Lithographic photoresist composition and process for its use in the manufacture of integrated circuits 失效
    平版光刻胶组合物及其在制造集成电路中的应用

    公开(公告)号:US06165678A

    公开(公告)日:2000-12-26

    申请号:US111558

    申请日:1998-07-08

    IPC分类号: G03F7/004 G03F7/039

    摘要: A novel radiation-sensitive lithographic photoresist composition is provided which has improved sensitivity and resolution. The composition comprises a photosensitive acid generator and an acrylate or methacrylate copolymer. The copolymer contains first monomeric units having polar pendant groups and second monomeric units containing photoacid-cleavable ester groups. The polar pendant groups preferably comprise C.sub.6 -C.sub.12 alicyclic substituents containing a polar moiety R*, wherein the alicyclic substituents are bound through a linker moiety to the polymer backbone. Other monomeric units may be included as well. A process for using the composition to generate resist images on a substrate, i.e., in the manufacture of integrated circuits or the like.

    摘要翻译: 提供了一种具有改进的灵敏度和分辨率的新型辐射敏感平版印刷光刻胶组合物。 该组合物包含光敏酸产生剂和丙烯酸酯或甲基丙烯酸酯共聚物。 共聚物含有具有极性侧基的第一单体单元和含有光可酸裂解酯基的第二单体单元。 极性侧基优选包含含有极性部分R *的C6-C12脂环族取代基,其中脂环取代基通过连接体部分结合至聚合物主链。 也可以包括其它单体单元。 一种使用该组合物在基板上生成抗蚀剂图像,即集成电路等的制造方法。