Abstract:
A frequency-locked loop circuit includes: a digital control oscillator that generates a clock; and an FLL controller that generates a frequency control code to control an oscillation frequency of the clock. The FLL controller includes: a frequency comparison unit that compares a frequency of a clock generated by the digital control oscillator with a frequency of a multiplied reference clock; and a delay code control unit that generates, based on a comparison result of the frequency comparison unit, the frequency control code so that the frequency of the clock generated by the digital control oscillator matches the frequency of the multiplied reference clock. The frequency comparison unit determines the frequency of the clock by using first and second thresholds. The delay code control unit generates the frequency control code according to a determination of the frequency comparison unit and outputs the frequency control code to the digital control oscillator.
Abstract:
Disclosed is a semiconductor device that suppresses stress-induced resistance value changes. The semiconductor device includes a resistance correction circuit. The resistance correction circuit includes a first resistor whose stress-resistance value relationship is a first relationship, a second resistor whose stress-resistance value relationship is a second relationship, and a correction section that controls the resistance value of a correction target resistor. The correction section detects the difference between the resistance value of the first resistor and the resistance value of the second resistor and corrects, in accordance with the result of detection, the resistance value of the correction target resistor.
Abstract:
A source interconnect and a drain interconnect are alternately provided between a plurality of transistor units. One bonding wire is connected to a source interconnect at a plurality of points. The other bonding wire is connected to a source interconnect at a plurality of points. In addition, one bonding wire is connected to a drain interconnect at a plurality of points. In addition, the other bonding wire is connected to a drain interconnect at a plurality of points.
Abstract:
A semiconductor integrated circuit device having a function to perform oscillation in combination with a crystal oscillator, includes: a first impedance element including a first external terminal coupled to one terminal of the crystal oscillator, a second external terminal coupled to the other terminal of the crystal oscillator, and first and second terminals coupled to the first and second external terminals when the oscillation is performed; a first variable capacitance circuit coupled to the first terminal of the feedback impedance element, and a configuration circuit for setting a capacitance value of the first variable capacitance circuit. A measurement signal is supplied to the second terminal of the feedback impedance element, and in response to this, the capacitance value of the first variable capacitance circuit is set by the configuration circuit based on the delay time of an observation signal generated at the first terminal with respect to the measurement signal.