公开(公告)号：US09006882B2

公开(公告)日：2015-04-14

申请号：US12719398

申请日：2010-03-08

申请人： Reza A. Pagaila ,  Byung Tai Do ,  Heap Hoe Kuan

发明人： Reza A. Pagaila ,  Byung Tai Do ,  Heap Hoe Kuan

IPC分类号： H01L23/34 ,  H01L23/00 ,  H01L21/56 ,  H01L21/683 ,  H01L23/31 ,  H01L25/03 ,  H01L25/065 ,  H01L25/10 ,  H01L25/00 ,  H01L23/48

CPC分类号： H01L24/18 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3128 ,  H01L23/3185 ,  H01L23/481 ,  H01L24/19 ,  H01L24/48 ,  H01L25/03 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/18 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/82 ,  H01L2224/9222 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06568 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2225/1088 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/18162 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19107 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor die has an insulating material disposed in a peripheral region around the die. A blind via is formed through the gap. A conductive material is deposited in the blind via to form a conductive via. A conductive layer is formed between the conductive via and contact pad on the semiconductor die. A protective layer is formed over the front side of the semiconductor die. A portion of the insulating material and conductive via is removed from a backside of the semiconductor die opposite the front side of the semiconductor die so that a thickness of the conductive via is less than a thickness of the semiconductor wafer. The insulating material and conductive via are tapered. The wafer is singulated through the gap to separate the semiconductor die. A plurality of semiconductor die can be stacked and electrically interconnected through the conductive vias.

公开(公告)号：US20100007029A1

公开(公告)日：2010-01-14

申请号：US12172817

申请日：2008-07-14

申请人： Byung Tai Do ,  Heap Hoe Kuan ,  Reza A. Pagaila ,  Linda Pei Ee Chua

发明人： Byung Tai Do ,  Heap Hoe Kuan ,  Reza A. Pagaila ,  Linda Pei Ee Chua

IPC分类号： H01L23/52 ,  H01L21/00

CPC分类号： H01L24/82 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3114 ,  H01L24/19 ,  H01L24/24 ,  H01L24/48 ,  H01L2221/68345 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/82001 ,  H01L2224/82039 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor die has a peripheral region around the die. An insulating layer is formed over the semiconductor die. A portion of the insulating layer and peripheral is removed to form a recess around the semiconductor die. A conductive layer is deposited over the insulating layer and recess. The conductive layer is electrically connected to contact pads on the semiconductor die and conforms to a step into the recess. A gap is created through the conductive layer and peripheral region around the semiconductor die. An insulating material is deposited in the gap. A portion of the insulating material is removed to form a through hole via (THV). A conductive material is deposited in the THV to form a conductive THV. The conductive THV is recessed with respect to a surface of the semiconductor die. The conductive THV is electrically connected to the conductive layer.

摘要翻译： 半导体管芯具有围绕管芯的周边区域。 在半导体管芯上形成绝缘层。 去除绝缘层和周边的一部分以在半导体管芯周围形成凹陷。 导电层沉积在绝缘层和凹部上。 导电层电连接到半导体管芯上的接触焊盘，并符合入凹槽的步骤。 通过半导体管芯周围的导电层和周边区域产生间隙。 绝缘材料沉积在间隙中。 绝缘材料的一部分被去除以形成通孔（THV）。 导电材料沉积在THV中以形成导电THV。 导电THV相对于半导体管芯的表面凹陷。 导电THV与导电层电连接。

公开(公告)号：US20090302478A1

公开(公告)日：2009-12-10

申请号：US12133177

申请日：2008-06-04

申请人： Reza A. Pagaila ,  Byung Tai Do ,  Heap Hoe Kuan

发明人： Reza A. Pagaila ,  Byung Tai Do ,  Heap Hoe Kuan

IPC分类号： H01L23/48 ,  H01L21/44

CPC分类号： H01L24/18 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3128 ,  H01L23/3185 ,  H01L23/481 ,  H01L24/19 ,  H01L24/48 ,  H01L25/03 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/18 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/82 ,  H01L2224/9222 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06568 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2225/1088 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/18162 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19107 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor die has an insulating material disposed in a peripheral region around the die. A blind via is formed through the gap. A conductive material is deposited in the blind via to form a conductive via. A conductive layer is formed between the conductive via and contact pad on the semiconductor die. A protective layer is formed over the front side of the semiconductor die. A portion of the insulating material and conductive via is removed from a backside of the semiconductor die opposite the front side of the semiconductor die so that a thickness of the conductive via is less than a thickness of the semiconductor wafer. The insulating material and conductive via are tapered. The wafer is singulated through the gap to separate the semiconductor die. A plurality of semiconductor die can be stacked and electrically interconnected through the conductive vias.

摘要翻译： 半导体管芯具有设置在管芯周围的周边区域的绝缘材料。 盲孔通过间隙形成。 导电材料沉积在盲孔中以形成导电通孔。 在半导体管芯上的导电通孔和接触焊盘之间形成导电层。 在半导体管芯的前侧形成有保护层。 从半导体管芯的与半导体管芯的前侧相反的背面去除绝缘材料和导电通孔的一部分，使得导电通孔的厚度小于半导体晶片的厚度。 绝缘材料和导电通孔是锥形的。 通过间隙将晶片分离，以分离半导体管芯。 多个半导体管芯可以通过导电通孔堆叠并电互连。

公开(公告)号：US08101460B2

公开(公告)日：2012-01-24

申请号：US12133216

申请日：2008-06-04

申请人： Reza A. Pagaila ,  Byung Tai Do ,  Heap Hoe Kuan ,  Rui Huang

发明人： Reza A. Pagaila ,  Byung Tai Do ,  Heap Hoe Kuan ,  Rui Huang

IPC分类号： H01L21/00 ,  H01L21/302 ,  H01L21/461 ,  H01L23/552

CPC分类号： H01L21/568 ,  H01L21/561 ,  H01L23/3128 ,  H01L23/552 ,  H01L24/19 ,  H01L24/48 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05009 ,  H01L2224/05024 ,  H01L2224/05026 ,  H01L2224/05111 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05571 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/24137 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73257 ,  H01L2224/73259 ,  H01L2224/73265 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/1023 ,  H01L2225/1052 ,  H01L2225/1058 ,  H01L2225/1088 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/19041 ,  H01L2924/19107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A plurality of stacked semiconductor wafers each contain a plurality of semiconductor die. The semiconductor die each have a conductive via formed through the die. A gap is created between the semiconductor die. A conductive material is deposited in a bottom portion of the gap. An insulating material is deposited in the gap and over the semiconductor die. A portion of the insulating material in the gap is removed to form a recess between each semiconductor die extending to the conductive material. A shielding layer is formed over the insulating material and in the recess to contact the conductive material. The shielding layer isolates the semiconductor die from inter-device interference. A substrate is formed as a build-up structure on the semiconductor die adjacent to the conductive material. The conductive material electrically connects to a ground point in the substrate. The gap is singulating to separate the semiconductor die.

摘要翻译： 多个堆叠的半导体晶片各自包含多个半导体管芯。 半导体管芯每个都具有通过管芯形成的导电通孔。 在半导体管芯之间产生间隙。 导电材料沉积在间隙的底部。 绝缘材料沉积在间隙中并在半导体管芯上方。 间隙中的绝缘材料的一部分被去除以在延伸到导电材料的每个半导体管芯之间形成凹槽。 在绝缘材料之上和凹部中形成屏蔽层以接触导电材料。 屏蔽层将半导体管芯与器件间干扰隔离。 在与导电材料相邻的半导体管芯上形成基板作为堆积结构。 导电材料电连接到衬底中的接地点。 间隙是分离半导体管芯。

公开(公告)号：US20100096731A1

公开(公告)日：2010-04-22

申请号：US12641958

申请日：2009-12-18

申请人： Byung Tai Do ,  Heap Hoe Kuan ,  Reza A. Pagaila ,  Linda Pei Ee Chua

发明人： Byung Tai Do ,  Heap Hoe Kuan ,  Reza A. Pagaila ,  Linda Pei Ee Chua

IPC分类号： H01L23/544 ,  H01L23/538

CPC分类号： H01L24/82 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3114 ,  H01L24/19 ,  H01L24/24 ,  H01L24/48 ,  H01L2221/68345 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/82001 ,  H01L2224/82039 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor die has a peripheral region around the die. An insulating layer is formed over the semiconductor die. A portion of the insulating layer and peripheral is removed to form a recess around the semiconductor die. A conductive layer is deposited over the insulating layer and recess. The conductive layer is electrically connected to contact pads on the semiconductor die and conforms to a step into the recess. A gap is created through the conductive layer and peripheral region around the semiconductor die. An insulating material is deposited in the gap. A portion of the insulating material is removed to form a through hole via (THV). A conductive material is deposited in the THV to form a conductive THV. The conductive THV is recessed with respect to a surface of the semiconductor die. The conductive THV is electrically connected to the conductive layer.

摘要翻译： 半导体管芯具有围绕管芯的周边区域。 在半导体管芯上形成绝缘层。 去除绝缘层和周边的一部分以在半导体管芯周围形成凹陷。 在绝缘层和凹槽上沉积导电层。 导电层电连接到半导体管芯上的接触焊盘，并符合入凹槽的步骤。 通过半导体管芯周围的导电层和周边区域产生间隙。 绝缘材料沉积在间隙中。 绝缘材料的一部分被去除以形成通孔（THV）。 导电材料沉积在THV中以形成导电THV。 导电THV相对于半导体管芯的表面凹陷。 导电THV与导电层电连接。

公开(公告)号：US20090302435A1

公开(公告)日：2009-12-10

申请号：US12133216

申请日：2008-06-04

申请人： Reza A. Pagaila ,  Byung Tai Do ,  Heap Hoe Kuan ,  Rui Huang

发明人： Reza A. Pagaila ,  Byung Tai Do ,  Heap Hoe Kuan ,  Rui Huang

IPC分类号： H01L23/552 ,  H01L21/50

CPC分类号： H01L21/568 ,  H01L21/561 ,  H01L23/3128 ,  H01L23/552 ,  H01L24/19 ,  H01L24/48 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05009 ,  H01L2224/05024 ,  H01L2224/05026 ,  H01L2224/05111 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05571 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/24137 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73257 ,  H01L2224/73259 ,  H01L2224/73265 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/1023 ,  H01L2225/1052 ,  H01L2225/1058 ,  H01L2225/1088 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/19041 ,  H01L2924/19107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A plurality of stacked semiconductor wafers each contain a plurality of semiconductor die. The semiconductor die each have a conductive via formed through the die. A gap is created between the semiconductor die. A conductive material is deposited in a bottom portion of the gap. An insulating material is deposited in the gap and over the semiconductor die. A portion of the insulating material in the gap is removed to form a recess between each semiconductor die extending to the conductive material. A shielding layer is formed over the insulating material and in the recess to contact the conductive material. The shielding layer isolates the semiconductor die from inter-device interference. A substrate is formed as a build-up structure on the semiconductor die adjacent to the conductive material. The conductive material electrically connects to a ground point in the substrate. The gap is singulating to separate the semiconductor die.

摘要翻译： 多个堆叠的半导体晶片各自包含多个半导体管芯。 半导体管芯每个都具有通过管芯形成的导电通孔。 在半导体管芯之间产生间隙。 导电材料沉积在间隙的底部。 绝缘材料沉积在间隙中并在半导体管芯上方。 间隙中的绝缘材料的一部分被去除以在延伸到导电材料的每个半导体管芯之间形成凹槽。 在绝缘材料之上和凹部中形成屏蔽层以接触导电材料。 屏蔽层将半导体管芯与器件间干扰隔离。 在与导电材料相邻的半导体管芯上形成基板作为堆积结构。 导电材料电连接到衬底中的接地点。 间隙是分离半导体管芯。

公开(公告)号：US08080882B2

公开(公告)日：2011-12-20

申请号：US12641958

申请日：2009-12-18

申请人： Byung Tai Do ,  Heap Hoe Kuan ,  Reza A. Pagaila ,  Linda Pei Ee Chua

发明人： Byung Tai Do ,  Heap Hoe Kuan ,  Reza A. Pagaila ,  Linda Pei Ee Chua

IPC分类号： H01L23/544

CPC分类号： H01L24/82 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3114 ,  H01L24/19 ,  H01L24/24 ,  H01L24/48 ,  H01L2221/68345 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/82001 ,  H01L2224/82039 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor die has a peripheral region around the die. An insulating layer is formed over the semiconductor die. A portion of the insulating layer and peripheral is removed to form a recess around the semiconductor die. A conductive layer is deposited over the insulating layer and recess. The conductive layer is electrically connected to contact pads on the semiconductor die and conforms to a step into the recess. A gap is created through the conductive layer and peripheral region around the semiconductor die. An insulating material is deposited in the gap. A portion of the insulating material is removed to form a through hole via (THV). A conductive material is deposited in the THV to form a conductive THV. The conductive THV is recessed with respect to a surface of the semiconductor die. The conductive THV is electrically connected to the conductive layer.

摘要翻译： 半导体管芯具有围绕管芯的周边区域。 在半导体管芯上形成绝缘层。 去除绝缘层和周边的一部分以在半导体管芯周围形成凹陷。 导电层沉积在绝缘层和凹部上。 导电层电连接到半导体管芯上的接触焊盘，并符合入凹槽的步骤。 通过半导体管芯周围的导电层和周边区域产生间隙。 绝缘材料沉积在间隙中。 绝缘材料的一部分被去除以形成通孔（THV）。 导电材料沉积在THV中以形成导电THV。 导电THV相对于半导体管芯的表面凹陷。 导电THV与导电层电连接。

公开(公告)号：US07704796B2

公开(公告)日：2010-04-27

申请号：US12133177

申请日：2008-06-04

申请人： Reza A. Pagaila ,  Byung Tai Do ,  Heap Hoe Kuan

发明人： Reza A. Pagaila ,  Byung Tai Do ,  Heap Hoe Kuan

IPC分类号： H01L21/00

CPC分类号： H01L24/18 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3128 ,  H01L23/3185 ,  H01L23/481 ,  H01L24/19 ,  H01L24/48 ,  H01L25/03 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/18 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/82 ,  H01L2224/9222 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06568 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2225/1088 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/18162 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19107 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor die has an insulating material disposed in a peripheral region around the die. A blind via is formed through the gap. A conductive material is deposited in the blind via to form a conductive via. A conductive layer is formed between the conductive via and contact pad on the semiconductor die. A protective layer is formed over the front side of the semiconductor die. A portion of the insulating material and conductive via is removed from a backside of the semiconductor die opposite the front side of the semiconductor die so that a thickness of the conductive via is less than a thickness of the semiconductor wafer. The insulating material and conductive via are tapered. The wafer is singulated through the gap to separate the semiconductor die. A plurality of semiconductor die can be stacked and electrically interconnected through the conductive vias.

摘要翻译： 半导体管芯具有设置在管芯周围的周边区域的绝缘材料。 盲孔通过间隙形成。 导电材料沉积在盲孔中以形成导电通孔。 在半导体管芯上的导电通孔和接触焊盘之间形成导电层。 在半导体管芯的前侧形成有保护层。 从半导体管芯的与半导体管芯的前侧相反的背面去除绝缘材料和导电通孔的一部分，使得导电通孔的厚度小于半导体晶片的厚度。 绝缘材料和导电通孔是锥形的。 通过间隙将晶片分离，以分离半导体管芯。 多个半导体管芯可以通过导电通孔堆叠并电互连。

公开(公告)号：US07659145B2

公开(公告)日：2010-02-09

申请号：US12172817

申请日：2008-07-14

申请人： Byung Tai Do ,  Heap Hoe Kuan ,  Reza A. Pagaila ,  Linda Pei Ee Chua

发明人： Byung Tai Do ,  Heap Hoe Kuan ,  Reza A. Pagaila ,  Linda Pei Ee Chua

IPC分类号： H01L21/00

CPC分类号： H01L24/82 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3114 ,  H01L24/19 ,  H01L24/24 ,  H01L24/48 ,  H01L2221/68345 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/82001 ,  H01L2224/82039 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor die has a peripheral region around the die. An insulating layer is formed over the semiconductor die. A portion of the insulating layer and peripheral is removed to form a recess around the semiconductor die. A conductive layer is deposited over the insulating layer and recess. The conductive layer is electrically connected to contact pads on the semiconductor die and conforms to a step into the recess. A gap is created through the conductive layer and peripheral region around the semiconductor die. An insulating material is deposited in the gap. A portion of the insulating material is removed to form a through hole via (THV). A conductive material is deposited in the THV to form a conductive THV. The conductive THV is recessed with respect to a surface of the semiconductor die. The conductive THV is electrically connected to the conductive layer.

摘要翻译： 半导体管芯具有围绕管芯的周边区域。 在半导体管芯上形成绝缘层。 去除绝缘层和周边的一部分以在半导体管芯周围形成凹陷。 导电层沉积在绝缘层和凹部上。 导电层电连接到半导体管芯上的接触焊盘，并符合入凹槽的步骤。 通过半导体管芯周围的导电层和周边区域产生间隙。 绝缘材料沉积在间隙中。 绝缘材料的一部分被去除以形成通孔（THV）。 导电材料沉积在THV中以形成导电THV。 导电THV相对于半导体管芯的表面凹陷。 导电THV与导电层电连接。

公开(公告)号：US20120104573A1

公开(公告)日：2012-05-03

申请号：US13339185

申请日：2011-12-28

申请人： Reza A. Pagaila ,  Byung Tai Do ,  Heap Hoe Kuan ,  Rui Huang

发明人： Reza A. Pagaila ,  Byung Tai Do ,  Heap Hoe Kuan ,  Rui Huang

IPC分类号： H01L23/552

CPC分类号： H01L21/568 ,  H01L21/561 ,  H01L23/3128 ,  H01L23/552 ,  H01L24/19 ,  H01L24/48 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05009 ,  H01L2224/05024 ,  H01L2224/05026 ,  H01L2224/05111 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05571 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/24137 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73257 ,  H01L2224/73259 ,  H01L2224/73265 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/1023 ,  H01L2225/1052 ,  H01L2225/1058 ,  H01L2225/1088 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/19041 ,  H01L2924/19107 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A plurality of stacked semiconductor wafers each contain a plurality of semiconductor die. The semiconductor die each have a conductive via formed through the die. A gap is created between the semiconductor die. A conductive material is deposited in a bottom portion of the gap. An insulating material is deposited in the gap and over the semiconductor die. A portion of the insulating material in the gap is removed to form a recess between each semiconductor die extending to the conductive material. A shielding layer is formed over the insulating material and in the recess to contact the conductive material. The shielding layer isolates the semiconductor die from inter-device interference. A substrate is formed as a build-up structure on the semiconductor die adjacent to the conductive material. The conductive material electrically connects to a ground point in the substrate. The gap is singulating to separate the semiconductor die.

摘要翻译： 多个堆叠的半导体晶片各自包含多个半导体管芯。 半导体管芯每个都具有通过管芯形成的导电通孔。 在半导体管芯之间产生间隙。 导电材料沉积在间隙的底部。 绝缘材料沉积在间隙中并在半导体管芯上方。 间隙中的绝缘材料的一部分被去除以在延伸到导电材料的每个半导体管芯之间形成凹槽。 在绝缘材料之上和凹部中形成屏蔽层以接触导电材料。 屏蔽层将半导体管芯与器件间干扰隔离。 在与导电材料相邻的半导体管芯上形成基板作为堆积结构。 导电材料电连接到衬底中的接地点。 间隙是分离半导体管芯。