摘要:
A power control circuit to minimize power consumption of CMOS circuits by disabling/enabling the clock input to the CMOS circuit. A phase locked loop (PLL) or delay locked loop (DLL) drives a capacitive load of the component and a dummy load comparable to the component load. A standby latch is provided to control the clock input to the component. In a standby state, the clock signal is not provided to the component but the PLL/DLL continues to operate, driving the dummy load. Thus, when it is desirable to power on the circuit, the standby latch is reset and the clock signal is provided to the component, thereby turning on the component with little latency.
摘要:
A high speed bus system in which at least one master device, such as a processor and at least one DRAM slave device are coupled to the bus. An innovative packet format and device interface which utilizes a plurality of time and space saving features in order to decrease the die size of the device receiver and decrease the overall latency on the bus is provided. In the preferred embodiment the request packet is transmitted on ten multiplexed transmission lines, identified as BusCtl and BusData [8:0]. The packet is transmitted over six sequential bus cycles, wherein during each bus cycle, a different portion of the packet is transmitted. The lower order address bits are moved ahead of the higher order address bits of the memory request. This enables the receiving device to process the memory request faster as the locality of the memory reference with respect to previous references can be immediately determined and page mode accesses on the DRAM can be initiated as quickly as possible. The type of memory access is arranged over a plurality of clock cycles, placing the more critical bits first. The count of blocks of data requested is arranged to minimize the number of bit positions in the packet used and therefore the number of transmission lines of the bus and the number of bus receiver contacts on the receiving device.
摘要:
A memory device has interface circuitry and a memory core which make up the stages of a pipeline, each stage being a step in a universal sequence associated with the memory core. The memory device has a plurality of operation units such as precharge, sense, read and write, which handle the primitive operations of the memory core to which the operation units are coupled. The memory device further includes a plurality of transport units configured to obtain information from external connections specifying an operation for one of the operation units and to transfer data between the memory core and the external connections. The transport units operate concurrently with the operation units as added stages to the pipeline, thereby creating a memory device which operates at high throughput and with low service times under the memory reference stream of common applications.
摘要:
A memory device has interface circuitry and a memory core which make up the stages of a pipeline, each stage being a step in a universal sequence associated with the memory core. The memory device has a plurality of operation units such as precharge, sense, read and write, which handle the primitive operations of the memory core to which the operation units are coupled. The memory device further includes a plurality of transport units configured to obtain information from external connections specifying an operation for one of the operation units and to transfer data between the memory core and the external connections. The transport units operate concurrently with the operation units as added stages to the pipeline, thereby creating a memory device which operates at high throughput and with low service times under the memory reference stream of common applications.
摘要:
Methods of operation of a memory device and system are provided in embodiments. Initialization operations are conducted at a first frequency of operation during an initialization sequence. Memory access operations are then performed at a second frequency of operation. The second frequency of operation is higher than the first frequency of operation. Also, the memory access operations include a read operation and a write operation. In an embodiment, information that represents the first frequency of operation and the second frequency of operation is read from a serial presence detect device.
摘要:
A memory controller has an interface to convey, over a first set of interconnect resources: a first command that specifies activation of a row of memory cells, a second command that specifies a write operation directed to the row of memory cells, a bit that specifies whether precharging will occur in connection with the write operation, a code that specifies whether data mask information will be issued in connection with the write operation, and if the code specifies that data mask information will be issued, data mask information that specifies whether to selectively write portions of write data associated with the write operation. The memory controller interface further conveys, over a second set of interconnect resources, separate from the first set of interconnect resource, the write data.
摘要:
A memory device including an array of memory cells, and a register circuit to store a value representative of a period of time to elapse before the memory device is ready to receive a command when recovering from a power down mode is provided in an embodiment. The command specifies an access to the array of memory cells. A delay lock loop circuit synchronizes data transfers using an external clock signal. The delay lock loop circuit reacquires synchronization with the external clock signal during the period of time.
摘要:
An electronic device with device timing constraints includes a set of connections coupled to an interconnect structure that carries row and column commands. A memory core stores data. A memory interface is connect to the set of connections and the memory core. The memory interface includes circuitry for generating memory core timing signals in accordance with the row commands and the column commands. The memory core timing signals have timing constraints to insure correct memory core operation. The memory interface circuitry includes individual delay components for adjusting the timing of selected timing signals of the memory core timing signals.
摘要:
Additional modes are provided to enhance the functionality and performance of a memory system. In one embodiment, a unique bit mask is supplied with the write data used in each column access. In an alternate embodiment, a bit mask register and byte mask register are provided to support bit level and byte level masking. The bit mask and write data registers are realized as a single register to provide the functionality while minimizing component space and cost. In another embodiment, a separate bit mask and byte mask are provided. The byte mask is loaded with mask data in one cycle and is used during the next "q" column write accesses. This structure provides for operating modes with no bit masking, with bit masks supplied for every row access, and with bit masks supplied with every column access. In order to enhance the functionality of a system, such as a two-dimensional graphics system, in an alternate embodiment, the memory system is provided with two registers and a select control line to select data from one of two registers. In a computer graphics system, this is used to select between foreground and background colors. The embodiment can be utilized in conjunction with the other embodiments described to provide enhanced functionality and performance.
摘要:
As interfaces to DRAMs become more advanced and higher performance, the interfaces and signal lines required to support the interface become more expensive to implement. Therefore, it is desirable to minimize the number of signal lines and maximize the bandwidth of the signal lines interfacing to the DRAM in order to take advantage of the high performance of the signal lines in the interface. In the DRAM memory system of the present invention, the address and control lines and are combined and the information multiplexed such that the DRAM pins have roughly equal information rate at all times.