公开(公告)号：US08817094B1

公开(公告)日：2014-08-26

申请号：US12712720

申请日：2010-02-25

申请人： Robert K. Brown ,  Jason D. Reasoner ,  Neal B. DePape ,  Robert F. Foster

发明人： Robert K. Brown ,  Jason D. Reasoner ,  Neal B. DePape ,  Robert F. Foster

IPC分类号： H04N7/18

CPC分类号： H04N7/188 ,  G08B13/19667 ,  G08B13/19669

摘要： In an illustrative implementation, a system for video storage optimization analyzes user activity to determine how to optimally store video. In a preferred embodiment, a security system records video from a plurality of security cameras and stores the video at the security system and/or a server system, along with associated metadata. The server system monitors user activity, such as live and recorded video viewing behavior, and queries for videos. The server system collects user video viewing behavior statistics, determines trends, and stores both personnel-specific and enterprise-wide settings. An optimization engine analyzes the video info, personnel-specific settings, enterprise-wide settings, and user statistics to determine a storage factor for a video. The optimization engine then determines if a video meets storage factor thresholds and settings for compression or deletion.

摘要翻译： 在说明性实现中，用于视频存储优化的系统分析用户活动以确定如何最佳地存储视频。 在优选实施例中，安全系统记录来自多个安全摄像机的视频，并将视频存储在安全系统和/或服务器系统以及关联的元数据。 服务器系统监视用户活动，如直播和录制视频观看行为，以及视频查询。 服务器系统收集用户视频观看行为统计信息，确定趋势，并存储人员和企业范围的设置。 优化引擎分析视频信息，人员特定设置，企业范围设置和用户统计信息，以确定视频的存储系数。 然后，优化引擎确定视频是否满足存储因子阈值和用于压缩或删除的设置。

公开(公告)号：US08576283B1

公开(公告)日：2013-11-05

申请号：US12652156

申请日：2010-01-05

申请人： Robert F. Foster ,  Edward E. Burns

发明人： Robert F. Foster ,  Edward E. Burns

IPC分类号： H04N7/18

CPC分类号： H04N7/188 ,  G06Q10/0631

摘要： In one embodiment, a chain of custody management application is configured to receive electronic recordings and physical evidence data, associate them with a security event, and automatically create and embed a hash value that aids in the authentication of both the electronic recordings and the physical evidence. A case management system may create a case record for an incident, present a form to the user, and prompt the user to electronically associate an electronic recording and physical evidence to the case record. The case management system optionally issues a call to a verification system which, in this example, automatically creates a first hash value from the electronic recording data and a second hash value from the physical evidence data. The hash values may then be embedded in an electronic case record form that may be printed on demand for use by government authorities.

摘要翻译： 在一个实施例中，管理链管理应用被配置为接收电子记录和物理证据数据，将其与安全事件相关联，并且自动创建和嵌入有助于对电子记录和物理证据的认证的哈希值 。 案件管理系统可以为事件创建案例记录，向用户呈现一个表单，并提示用户将电子记录和物理证据电子地关联到案例记录。 病例管理系统可选地向验证系统发出呼叫，在该示例中，该验证系统自动从电子记录数据创建第一散列值，并从物理证据数据中自动创建第二哈希值。 然后可以将哈希值嵌入电子病例记录表格，其可根据需要印刷以供政府机构使用。

公开(公告)号：US6161500A

公开(公告)日：2000-12-19

申请号：US940779

申请日：1997-09-30

申请人： Stanislaw Kopacz ,  Douglas Arthur Webb ,  Gerrit Jan Leusink ,  Rene Emile LeBlanc ,  Michael S. Ameen ,  Joseph Todd Hillman ,  Robert F. Foster ,  Robert Clark Rowan, Jr.

发明人： Stanislaw Kopacz ,  Douglas Arthur Webb ,  Gerrit Jan Leusink ,  Rene Emile LeBlanc ,  Michael S. Ameen ,  Joseph Todd Hillman ,  Robert F. Foster ,  Robert Clark Rowan, Jr.

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/50 ,  C23C16/505 ,  C23C16/509 ,  C23C16/01

CPC分类号： C23C16/45574 ,  C23C16/45514 ,  C23C16/45565 ,  C23C16/5096

摘要： A method and apparatus for depositing a film by chemical vapor deposition comprises a showerhead for dispersing reactant gases into the processing space wherein the showerhead has a first space therein operable for receiving and dispersing the first reacting gas, and has a second space therein, generally isolated from the first space, and operable for receiving and dispersing the second reactant gas separate from the first gas dispersion for maintaining segregation of reactant gases and generally preventing premature mixture of the gases prior to their introduction into the processing space to prevent premature deposition in the system.

公开(公告)号：US5434110A

公开(公告)日：1995-07-18

申请号：US898492

申请日：1992-06-15

申请人： Robert F. Foster ,  Helen E. Rebenne

发明人： Robert F. Foster ,  Helen E. Rebenne

IPC分类号： C23C16/04 ,  C23C16/14 ,  C23C16/44 ,  C23C16/455 ,  C23C16/48 ,  H01L21/205 ,  H01L21/285 ,  H01L21/316 ,  H01L21/768 ,  H01L21/44

CPC分类号： C23C16/44 ,  C23C16/04 ,  C23C16/14 ,  H01L21/02271 ,  H01L21/28556 ,  H01L21/76877 ,  H01L21/76879

摘要： Methods of chemical vapor deposition (CVD) are disclosed wherein high quality films are deposited on patterned wafer substrates. In the methods, a patterned wafer is rotated about an axis thereof in a CVD reaction chamber and reactant gases are directed into the reaction chamber and toward the patterned wafer substrate in a direction generally perpendicular to the plane of rotation of the wafer. The reaction chamber is maintained at a suitable pressure and the wafer is heated to a suitable temperature whereby a high quality film is deposited by CVD on the patterned wafer substrate. The process is applicable to deposit elemental films, compound films, alloy films and solid solution films, and is particularly advantageous in that high film deposition rates and high reactant conversion rates are achieved.

摘要翻译： 公开了化学气相沉积（CVD）的方法，其中高质量的膜沉积在图案化的晶片基底上。 在这些方法中，在CVD反应室中，图案化晶片围绕其轴线转动，并且反应气体在大致垂直于晶片旋转平面的方向上被引导到反应室并朝向图案化的晶片基板。 将反应室保持在合适的压力下，并将晶片加热至合适的温度，由此通过CVD在图案化的晶片基底上沉积高质量的膜。 该方法适用于沉积元素膜，复合膜，合金膜和固溶体膜，并且特别有利的是获得高的膜沉积速率和高的反应物转化率。

公开(公告)号：US5273588A

公开(公告)日：1993-12-28

申请号：US898560

申请日：1992-06-15

申请人： Robert F. Foster ,  Helen E. Rebenne ,  Rene E. LeBlanc ,  Carl L. White ,  Rikhit Arora

发明人： Robert F. Foster ,  Helen E. Rebenne ,  Rene E. LeBlanc ,  Carl L. White ,  Rikhit Arora

IPC分类号： C23C16/14 ,  C23C16/44 ,  C23C16/455 ,  C23C16/48 ,  C23C16/54 ,  H01J37/32 ,  H01L21/00 ,  H01L21/205 ,  H01L21/31 ,  H01L21/683 ,  C23C16/50

CPC分类号： H01L21/67103 ,  C23C16/455 ,  C23C16/54 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32862 ,  H01L21/6838

摘要： A semiconductor wafer processing apparatus, particularly a CVD reactor, is provided with plasma cleaning electrodes integrated into process gas flow shaping structure that smoothly directs the gas past the wafer on a susceptor. The processing apparatus preferably has a showerhead or other inlet to direct a gas mixture onto a wafer and a plurality of baffles to reduce turbulence. Plasma cleaning electrodes are included in the baffles or the showerhead or both, one or more of which preferably have cleaning gas outlet orifices therein, preferably evenly distributed around the axis of the susceptor to provide uniform cleaning gas flow.

摘要翻译： 半导体晶片处理装置，特别是CVD反应器设置有集成在工艺气流成形结构中的等离子体清洁电极，其将气体平滑地引导到基座上的晶片。 处理装置优选地具有喷头或其他入口以将气体混合物引导到晶片和多个挡板上以减少湍流。 等离子体清洁电极包括在挡板或喷头或两者中，其中一个或多个优选地具有清洁气体出口孔，优选地均匀分布在基座的轴线上以提供均匀的清洁气体流。

公开(公告)号：US08457354B1

公开(公告)日：2013-06-04

申请号：US12833499

申请日：2010-07-09

申请人： Clare E. Kolar ,  Robert F. Foster

发明人： Clare E. Kolar ,  Robert F. Foster

IPC分类号： G06K9/00

CPC分类号： G06K9/00677 ,  G06K9/00771 ,  G06K9/6292

摘要： In selected embodiments, a computer-implemented method for analyzing customer movement in a retail environment includes capturing an image of an individual at multiple locations within a retail environment and tracking the elapsed time between the individual's appearance at the various locations. For areas of the store at increased risk for shoplifting, the elapsed times may be compared to predetermined upper and/or lower elapsed time thresholds or windows to determine whether an individual is likely to commit a crime in the retail environment. The thresholds or window may be empirically determined based on analysis of historical security video footage and security incident records.

摘要翻译： 在选择的实施例中，用于分析零售环境中的客户移动的计算机实现的方法包括在零售环境中的多个位置处捕获个人的图像，并且跟踪个体在不同位置的外观之间的经过时间。 对于商店的商店面积增加，经过时间可以与预定的上限和/或下限经过时间阈值或窗口进行比较，以确定个人是否可能在零售环境中犯罪。 阈值或窗口可以根据对历史安全视频镜头和安全事件记录的分析经验确定。

公开(公告)号：US5866213A

公开(公告)日：1999-02-02

申请号：US899500

申请日：1997-07-19

申请人： Robert F. Foster ,  Joseph T. Hillman ,  Rene E. LeBlanc

发明人： Robert F. Foster ,  Joseph T. Hillman ,  Rene E. LeBlanc

IPC分类号： C23C16/50 ,  C23C16/00 ,  C23C16/04 ,  C23C16/14 ,  C23C16/30 ,  C23C16/34 ,  C23C16/42 ,  C23C16/44 ,  C23C16/452 ,  C23C16/455 ,  C23C16/458 ,  C23C16/509 ,  C23C16/56 ,  H01L21/205 ,  H01L21/28 ,  H01L21/285 ,  H01L51/30 ,  B05D3/06

CPC分类号： C23C16/45504 ,  C23C16/04 ,  C23C16/045 ,  C23C16/14 ,  C23C16/34 ,  C23C16/42 ,  C23C16/452 ,  C23C16/455 ,  C23C16/45565 ,  C23C16/4584 ,  C23C16/5096 ,  H01L21/28556

摘要： A method for depositing a film on a substrate by plasma-enhanced chemical vapor deposition at temperatures substantially lower than conventional thermal CVD temperatures comprises placing a substrate within a reaction chamber and exciting a first gas upstream of the substrate to generate activated radicals of the first gas. The substrate is rotated within the deposition chamber to create a pumping action which draws the gas mixture of first gas radicals to the substrate surface. A second gas is supplied proximate the substrate to mix with the activated radicals of the first gas and the mixture produces a surface reaction at the substrate to deposit a film. The pumping action draws the gas mixture down to the substrate surface in a laminar flow to reduce recirculation and radical recombination such that a sufficient amount of radicals are available at the substrate surface to take part in the surface reaction. Another method utilizes a gas-dispersing showerhead that is biased with RF energy to form an electrode which generates activated radicals and ions in a concentrated plasma close to the substrate surface. The activated plasma gas radicals and ions utilized in the invention contribute energy to the surface reaction such that the film may be deposited at a substantially lower deposition temperature that is necessary for traditional thermal CVD techniques. Furthermore, the activation of these species reduces the temperature needed to complete the surface reaction. The method is particularly useful in depositing titanium-containing films at low temperatures.

摘要翻译： 通过在基本上低于常规热CVD温度的温度下通过等离子体增强化学气相沉积在衬底上沉积膜的方法包括将衬底放置在反应室内并激发衬底上游的第一气体以产生第一气体的活性自由基 。 衬底在沉积室内旋转以产生泵送作用，其将第一气体自由基的气体混合物吸引到衬底表面。 第二气体靠近衬底供应以与第一气体的活化自由基混合，并且混合物在衬底处产生表面反应以沉积膜。 泵送动作以层流将气体混合物下拉到衬底表面以减少再循环和自由基重组，使得在衬底表面上可以获得足够量的自由基参与表面反应。 另一种方法利用用RF能量偏置的气体分散喷头，以形成在靠近基板表面的浓缩等离子体中产生活化的自由基和离子的电极。 在本发明中使用的激活的等离子体气体自由基和离子向表面反应贡献能量，使得膜可以以传统热CVD技术所需的基本上较低的沉积温度沉积。 此外，这些物质的活化降低了完成表面反应所需的温度。 该方法特别适用于在低温下沉积含钛膜。

公开(公告)号：US5342652A

公开(公告)日：1994-08-30

申请号：US898565

申请日：1992-06-15

申请人： Robert F. Foster ,  Damodaran Srinivas

发明人： Robert F. Foster ,  Damodaran Srinivas

IPC分类号： C23C16/02 ,  C23C16/04 ,  C23C16/14 ,  H01L21/285 ,  C23C16/00

CPC分类号： H01L21/28556 ,  C23C16/0218 ,  C23C16/04 ,  C23C16/14

摘要： Nucleation of a refractory metal such as tungsten is initiated on a substrate of TiN without the use of silane by introducing hydrogen into a CVD reactor before the introduction of the reactant gas containing the metal, brought to reaction temperature and to reaction pressure. The process is most useful for CVD of tungsten onto patterned TiN coated silicon semiconductor wafers. Alternatively, hydrogen is introduced in a mixture with the metal containing gas, such as WF.sub.6, and maintained at subreaction pressure, of for example 100 mTorr, until the substrate is stabilized at a reaction temperature of approximately 400.degree. C. or higher, to cause the dissociation of hydrogen on the wafer surface, then elevated to a relatively high reaction pressure of, for example, 60 Torr at which nucleation is achieved. Also, the reduction reaction that deposits the tungsten film proceeds without the need for a two step nucleation-deposition process.

摘要翻译： 在引入含有金属的反应气体之前，将氢引入CVD反应器中，在TiN的基板上引入难熔金属如钨的成核，而不需要使用硅烷，使其达到反应温度和反应压力。 该方法对于在图案化的TiN涂覆的硅半导体晶片上的钨的CVD是最有用的。 或者，将氢气与含金属的气体（例如WF 6）的混合物引入，并保持在例如100mTorr的亚反应压力，直到基底在约400℃或更高的反应温度下稳定，导致 在晶片表面上解离氢，然后升高到相对较高的反应压力，例如达到成核的60托。 此外，沉积钨膜的还原反应进行而不需要两步成核沉积工艺。

公开(公告)号：US08010397B1

公开(公告)日：2011-08-30

申请号：US11626083

申请日：2007-01-23

申请人： Chon Chitanavong ,  Robert F. Foster

发明人： Chon Chitanavong ,  Robert F. Foster

IPC分类号： G06Q10/00

CPC分类号： G06Q30/02 ,  G06Q10/06311 ,  G06Q10/06316

摘要： A method for architectural review is provided. Project data is submitted to an architecture audit team. An exception to an approved technology for the project data is conveyed to a technology management team comprising subject matter experts from each of multiple domains. A recommendation regarding the exception to the approved technology for the project data is conveyed to an architecture review committee comprising a director representative from each domain. A decision on the recommendation regarding the exception is recorded.

摘要翻译： 提供了一种架构审查方法。 项目数据提交给架构审核组。 批准的项目数据技术的例外情况传达给包括多个领域的主题专家的技术管理团队。 关于项目数据的批准技术例外的建议被传达给一个由各领域的董事代表组成的架构审查委员会。 记录关于异常建议的决定。

公开(公告)号：US06221770B1

公开(公告)日：2001-04-24

申请号：US09364020

申请日：1999-07-30

申请人： Joseph T. Hillman ,  Robert F. Foster

发明人： Joseph T. Hillman ,  Robert F. Foster

IPC分类号： H01L2144

CPC分类号： C23C8/02 ,  C23C8/36 ,  C23C16/02 ,  C23C16/34

摘要： Using plasma enhanced chemical vapor deposition, various layers can be deposited on semiconductor substrates at low temperatures in the same reactor. When a titanium nitride film is required, a titanium film can be initially deposited using a plasma enhanced chemical vapor deposition wherein the plasma is created within 25 mm of the substrate surface, supplying a uniform plasma across the surface. The deposited film can be subjected to an ammonia anneal, again using a plasma of ammonia created within 25 mm of the substrate surface, followed by the plasma enhanced chemical vapor deposition of titanium nitride by creating a plasma of titanium tetrachloride and ammonia within 25 mm of the substrate surface. This permits deposition film and annealing at relatively low temperatures—less than 800° C. When titanium is so deposited over a silicon surface, titanium silicide will form at the juncture which then can be nitrided and coated with titanium or titanium nitride using the plasma enhanced chemical vapor deposition of the present invention. Thus, the present method permits the formation of multiple layers of titanium, titanium nitride, titanium silicide over the surface of the substrate in the same reactor.

摘要翻译： 使用等离子体增强化学气相沉积，可以在同一反应器中的低温下将各种层沉积在半导体衬底上。 当需要氮化钛膜时，可以使用等离子体增强化学气相沉积来初始沉积钛膜，其中在衬底表面的25mm内产生等离子体，在整个表面上提供均匀的等离子体。 沉积的膜可以再次使用在衬底表面的25mm内产生的氨等离子体进行氨退火，然后通过在25mm的内部产生四氯化钛和氨的等离子体增强化学气相沉积氮化钛 基材表面。 这允许沉积膜和在相对低的温度下退火 - 小于800℃。当钛沉积在硅表面上时，钛硅化物将在接合处形成，然后氮化钛可以用钛或氮化钛涂覆，使用等离子体增强 本发明的化学气相沉积。 因此，本方法允许在同一反应器中在衬底的表面上形成多层钛，氮化钛，硅化钛层。