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1.发明授权Apparatus and method for substrate heating utilizing various infrared means to achieve uniform intensity 失效用于加强各种红外波段的基板加热装置和方法，以达到均匀强度
公开(公告)号：US5179677A
公开(公告)日：1993-01-12
申请号：US651668
申请日：1991-02-06
IPC分类号： H01L21/205 , C23C16/48 , H01L21/00 , H01L21/22 , H01L21/31
CPC分类号： H01L21/67115 , C23C16/481
摘要： A reflector array employs a number of linear, tubular heater lamps arranged in a circle concentric with the substrate to be heated. Some of the lamps have focusing reflectors and the remainder have dispersive reflectors. A peripheral cylindrical reflector surrounds the lamps and their associated reflectors. The combined reflectors permit balancing the thermal radiation intensity across the surface of the substrate.
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公开(公告)号：US06476362B1
公开(公告)日：2002-11-05
申请号：US09660565
申请日：2000-09-12
IPC分类号： F27B514
CPC分类号： H01L21/67115 , H05B3/0047
摘要： A lamp array for a thermal processing chamber. The lamp array includes a plurality of lamps arranged in a generally circular array. The plurality of lamps can be arranged in one or more concentric rings to form a generally circular array. Additional lamp arrays can be provided adjacent the circumference of the circular array or outermost concentric ring to provide a generally rectangular heating pattern. At least one row of lamps can be provided tangentially to the circular portion of the lamp array to provide preheating or postheating of process gases in the flow direction of a rectangular processing chamber.
摘要翻译： 用于热处理室的灯阵列。 灯阵列包括以大致圆形阵列布置的多个灯。 多个灯可以布置在一个或多个同心环中以形成大致圆形的阵列。 可以在圆形阵列或最外同心环的圆周附近设置附加的灯阵列，以提供大致矩形的加热图案。 至少一排灯可以与灯阵列的圆形部分相切地提供，以在矩形处理室的流动方向上提供工艺气体的预加热或后加热。
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公开(公告)号：US5194401A
公开(公告)日：1993-03-16
申请号：US873483
申请日：1992-04-22
CPC分类号： C23C16/481 , C23C16/44
摘要： A thermal reactor system for semiconductor processing incorporates a reaction vessel with a rectangular quartz tube with reinforcing parallel quartz gussets. The gussets enable sub-ambient pressure processing, while the rectangular tube maximizes reactant gas flow uniformity over a wafer being processed. The gussets facilitate effective cooling, while minimally impairing heating of the wafer by allowing minimal wall thickness. The thermal reactor system further includes a gas source for supplying reactant gas and an exhaust handling system for removing spent gases from and establishing a reduced pressure within the reaction vessel. An array of infrared lamps is used to radiate energy through the quartz tube; the lamps are arranged in a staggered relation relative to the quartz gussets to minimize shadowing. In addition, other non-cylindrical gusseted vessel geometries are disclosed which provide for improved sub-ambient pressure thermal processing of semiconductor wafers.
摘要翻译： 用于半导体处理的热反应器系统包括具有加强平行石英角撑板的矩形石英管的反应容器。 角撑板能够进行低于环境压力的处理，而矩形管可以使正在处理的晶片上的反应气流均匀性最大化。 角撑板有助于有效的冷却，同时通过允许最小壁厚来最小限度地削弱晶片的加热。 热反应器系统还包括用于供应反应气体的气体源和用于从反应容器内除去废气并在反应容器内建立减压的废气处理系统。 使用红外灯阵列通过石英管辐射能量; 灯相对于石英角撑板以交错的关系布置，以最小化遮蔽。 此外，公开了提供半导体晶片的改进的次环境压力热处理的其它非圆柱形角撑板的几何形状。
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公开(公告)号：US4920918A
公开(公告)日：1990-05-01
申请号：US339784
申请日：1989-04-18
IPC分类号： F27B17/00 , C23C16/44 , C23C16/48 , H01L21/205 , H01L21/22 , H01L21/31 , H01L21/324
CPC分类号： C23C16/481 , C23C16/44
摘要： A thermal reactor system for semiconductor processing incorporates a reaction vessel with a rectangular quartz tube with reinforcing parallel quartz gussets. The gussets enable sub-ambient pressure processing, while the rectangular tube maximizes reactant gas flow uniformity over a wafer being processed. The gussets facilitate effective cooling, while minimally impairing heating of the wafer by allowing minimal wall thickness. The thermal reactor system further includes a gas source for supplying reactant gas and an exhaust handling system for removing spent gases from and establishing a reduced pressure within the reaction vessel. An array of infrared lamps is used to radiate energy through the quartz tube; the lamps are arranged in a staggered relation relative to the quartz gussets to minimize shadowing. In addition, other non-cylindrical gusseted vessel geometries are disclosed which provide for improved sub-ambient pressure thermal processing of semiconductor wafers.
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公开(公告)号：US5792269A
公开(公告)日：1998-08-11
申请号：US550668
申请日：1995-10-31
IPC分类号： C23C16/44 , C23C16/455 , C23C16/00
CPC分类号： C23C16/45565 , C23C16/455
摘要： A substrate processing system including a vacuum chamber; a pedestal which holds a substrate during processing; and a gas distribution structure which during processing is located adjacent to and distributes a process gas onto a surface of the substrate that is held on the pedestal for processing. The gas distribution structure includes a gas distribution faceplate including a plurality of gas distribution holes formed therethrough, wherein the holes of at least a first set of the plurality of holes pass through the faceplate at angles other than perpendicular to the surface of substrate.
摘要翻译： 一种基板处理系统，包括真空室; 处理时保持基板的基座; 以及气体分配结构，其处理期间邻近并分配处理气体到保持在基座上的基板的表面上以进行处理。 气体分配结构包括：气体分配面板，其包括通过其形成的多个气体分配孔，其中至少第一组多个孔中的孔以垂直于衬底表面的角度穿过面板。
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公开(公告)号：US20090159005A1
公开(公告)日：2009-06-25
申请号：US12115443
申请日：2008-05-05
申请人： Thomas E. Deacon
发明人： Thomas E. Deacon
CPC分类号： C23C16/4404
摘要： Systems and methods of coatings for semiconductor processing equipment. A semiconductor substrate processing system includes an enclosure for containing a semiconductor processing gas. The enclosure has an interior surface that is at least partially coated with a Silicon carbide coating to a desired thickness. The enclosure may be inlet piping for conveying the semiconductor processing gas to a processing chamber for processing the semiconductor substrate, a processing chamber and/or an exhaust flume for conveying used semiconductor processing gas away from a processing chamber. The interior surface may include additional coatings comprising Silicon and/or diamond like Carbon.
摘要翻译： 半导体加工设备涂层的系统和方法。 半导体衬底处理系统包括用于容纳半导体处理气体的外壳。 外壳具有至少部分地涂覆有碳化硅涂层至所需厚度的内表面。 外壳可以是用于将半导体处理气体输送到用于处理半导体衬底的处理室的入口管道，用于将使用的半导体处理气体输送到处理室的处理室和/或排出槽。 内表面可以包括包含硅和/或类似于金刚石的碳的附加涂层。
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公开(公告)号：US06523494B1
公开(公告)日：2003-02-25
申请号：US09659941
申请日：2000-09-12
IPC分类号： H01L2176
CPC分类号： H01L21/02126 , C23C16/402 , C23C16/56 , H01L21/02203 , H01L21/02271 , H01L21/02304 , H01L21/02312 , H01L21/02315 , H01L21/02362 , H01L21/31695
摘要： A composite silicon dioxide layer with a reduced dielectric constant is formed by enhancing the surface sensitivity of a PECVD liner layer with activated oxygen. Pores form in an SACVD layer of silicon dioxide deposited from a TEOS precursor over the sensitized PECVD layer. The pores reduce the dielectric constant of the composite layer. Activated oxygen is provided to the PECVD layer in the form of ozone or an oxygen-based plasma.
摘要翻译： 通过增强具有活性氧的PECVD衬垫层的表面灵敏度，形成介电常数降低的复合二氧化硅层。 在由敏化的PECVD层上的TEOS前体沉积的SACVD层中形成孔。 孔隙降低了复合层的介电常数。 活性氧以臭氧或氧基等离子体的形式提供给PECVD层。
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公开(公告)号：US06171966B2
公开(公告)日：2001-01-09
申请号：US08698552
申请日：1996-08-15
申请人： Thomas E. Deacon , Norma B. Riley
发明人： Thomas E. Deacon , Norma B. Riley
IPC分类号： H01L213065
CPC分类号： H01L21/3065
摘要： An improved delineation pattern for epitaxial depositions is created by forming a mask on a single-crystal silicon substrate which leaves an area (10) of the substrate exposed, doping the area with a dopant to create a doped region defined by a periphery, anisotropically, vertically etching the doped region to create a delineation pattern corresponding to the periphery, and then forming an epitaxial layer over the substrate and doped region. The periphery of the delineation pattern has a squared-off delineation step including a first step wall generally perpendicular to the surface of the substrate and a second step wall generally parallel to the surface of the substrate. The squared-off delineation step helps prevent wash-out of the delineation pattern as one or more epitaxial layers are deposited on the substrate.
摘要翻译： 通过在单晶硅衬底上形成掩模来形成用于外延沉积的改进的描绘图案，该掩模离开衬底的区域（10），用掺杂剂掺杂该区域以产生由周边限定的掺杂区域，各向异性地， 垂直蚀刻掺杂区域以产生对应于周边的描绘图案，然后在衬底和掺杂区域上形成外延层。 描绘图案的周边具有方形描绘步骤，包括通常垂直于基底表面的第一阶梯壁和大致平行于基底表面的第二阶梯壁。 当在衬底上沉积一个或多个外延层时，方形描绘步骤有助于防止描绘图案的洗出。
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公开(公告)号：US20100027273A1
公开(公告)日：2010-02-04
申请号：US12182078
申请日：2008-07-29
申请人： Thomas E. Deacon
发明人： Thomas E. Deacon
CPC分类号： G02B1/105 , G02B1/14 , G02B5/0808
摘要： Systems and methods of coatings for reflective surfaces. An optical system includes a reflective surface for reflecting optical energy and a transparent coating disposed upon the reflective surface. The coating may be characterized as more chemically inert than the reflective surface in an operating environment of the reflector. The coating may be characterized as harder than the reflective surface. The coating may be characterized as more refractory than the reflective surface. The coating may include diamond like carbon and/or other tetrahedrally bonded stable material, e.g., silicon carbide.
摘要翻译： 反射表面涂层的系统和方法。 光学系统包括用于反射光能的反射表面和设置在反射表面上的透明涂层。 在反射器的操作环境中，涂层的特征可以是比反射表面更具化学惰性。 该涂层可以表征为比反射表面更硬。 该涂层可以表征为比反射表面更难熔。 涂层可以包括类金刚石碳和/或其它四面体键合的稳定材料，例如碳化硅。
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公开(公告)号：US6149987A
公开(公告)日：2000-11-21
申请号：US75592
申请日：1998-04-07
IPC分类号： C23C16/40 , C23C16/56 , H01L21/316 , H05H1/24
CPC分类号： H01L21/02126 , C23C16/402 , C23C16/56 , H01L21/02203 , H01L21/02271 , H01L21/02304 , H01L21/02312 , H01L21/02315 , H01L21/02362 , H01L21/31695
摘要： A composite silicon dioxide layer with a reduced dielectric constant is formed by enhancing the surface sensitivity of a PECVD liner layer with activated oxygen. Pores form in an SACVD layer of silicon dioxide deposited from a TEOS precursor over the sensitized PECVD layer. The pores reduce the dielectric constant of the composite layer. Activated oxygen is provided to the PECVD layer in the form of ozone or an oxygen-based plasma.
摘要翻译： 通过增强具有活性氧的PECVD衬垫层的表面灵敏度，形成介电常数降低的复合二氧化硅层。 在由敏化的PECVD层上的TEOS前体沉积的SACVD层中形成孔。 孔隙降低了复合层的介电常数。 活性氧以臭氧或氧基等离子体的形式提供给PECVD层。
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