SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

    公开(公告)号:US20210225755A1

    公开(公告)日:2021-07-22

    申请号:US17225840

    申请日:2021-04-08

    Applicant: Rohm Co., Ltd.

    Abstract: A semiconductor device includes a semiconductor element, an internal electrode connected to the semiconductor element, a sealing resin covering the semiconductor element and a portion of the internal electrode, and an external electrode exposed from the sealing resin and connected to the internal electrode. The internal electrode includes a wiring layer and a columnar portion, where the wiring layer has a wiring layer front surface facing the back surface of the semiconductor element and a wiring layer back surface facing opposite from the wiring layer front surface in the thickness direction. The columnar portion protrudes in the thickness direction from the wiring layer front surface. The columnar portion has an exposed side surface facing in a direction perpendicular to the thickness direction. The external electrode includes a first cover portion covering the exposed side surface.

    SEMICONDUCTOR DEVICE
    4.
    发明申请

    公开(公告)号:US20220077124A1

    公开(公告)日:2022-03-10

    申请号:US17454897

    申请日:2021-11-15

    Applicant: ROHM CO., LTD.

    Abstract: A semiconductor device includes a substrate having a main surface, a plurality of first wirings, each having a first embedded part embedded in the substrate and exposed from the main surface, and a mounted part which is in contact with the main surface and is connected to the first embedded part, a semiconductor element having an element rear surface and a plurality of electrodes bonded to the mounted parts, a plurality of second wirings, each having a second embedded part embedded in the substrate and exposed from the main surface and a columnar part protruding from the second embedded part in the thickness direction, and being located outward from the semiconductor element as viewed in the thickness direction; and a passive element located on the side facing the main surface in the thickness direction more than the semiconductor element, and electrically connected to the plurality of second wirings.

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

    公开(公告)号:US20190287890A1

    公开(公告)日:2019-09-19

    申请号:US16354540

    申请日:2019-03-15

    Applicant: Rohm Co., Ltd.

    Abstract: A semiconductor device includes a semiconductor element, an internal electrode connected to the semiconductor element, a sealing resin covering the semiconductor element and a portion of the internal electrode, and an external electrode exposed from the sealing resin and connected to the internal electrode. The internal electrode includes a wiring layer and a columnar portion, where the wiring layer has a wiring layer front surface facing the back surface of the semiconductor element and a wiring layer back surface facing opposite from the wiring layer front surface in the thickness direction. The columnar portion protrudes in the thickness direction from the wiring layer front surface. The columnar portion has an exposed side surface facing in a direction perpendicular to the thickness direction. The external electrode includes a first cover portion covering the exposed side surface.

    SEMICONDUCTOR DEVICE AND METHOD OF MAKING THE SAME
    6.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF MAKING THE SAME 审中-公开
    半导体器件及其制造方法

    公开(公告)号:US20160190045A1

    公开(公告)日:2016-06-30

    申请号:US14971313

    申请日:2015-12-16

    Applicant: ROHM CO., LTD.

    Abstract: A semiconductor device includes: a semiconductor element having a functional surface formed with a functional circuit and a reverse surface opposite to the functional surface; an electroconductive support member supporting the semiconductor element and electrically connected to the semiconductor element; and a resin package covering the semiconductor element and at least a part of the electroconductive support member. The semiconductor element is provided with an electrode including a projection on the functional surface and with a reinforcing layer formed on the functional surface. The semiconductor device further includes a solid-state welded portion formed by solid state welding of at least a part of the projection of the electrode and at least a part of the electroconductive support member.

    Abstract translation: 半导体器件包括:具有形成有功能电路的功能表面和与功能表面相对的反面的半导体元件; 支撑所述半导体元件并电连接到所述半导体元件的导电支撑构件; 以及覆盖半导体元件和至少一部分导电支撑构件的树脂封装。 半导体元件设置有在功能表面上具有突起的电极和在功能表面上形成的增强层。 半导体器件还包括通过固体焊接形成的固态焊接部分,该焊接部分至少部分电极的突出部分和至少一部分导电支撑部件。

    SEMICONDUCTOR DEVICE PROVIDED WITH DIRECTION SENSOR ELEMENTS
    7.
    发明申请
    SEMICONDUCTOR DEVICE PROVIDED WITH DIRECTION SENSOR ELEMENTS 有权
    具有方向传感器元件的半导体器件

    公开(公告)号:US20150035528A1

    公开(公告)日:2015-02-05

    申请号:US14450896

    申请日:2014-08-04

    Applicant: ROHM CO., LTD.

    Abstract: A semiconductor device is provided with a substrate including a main surface and a back surface that face in opposite directions to each other in a thickness direction, and first, second and third direction sensor elements having different detection reference axes from each other. The substrate is formed with a recessed portion that is recessed from the main surface toward the back surface side. The first direction sensor element is disposed at least partially within the recessed portion. The second direction sensor element is disposed so as to overlap with the main surface as viewed in the thickness direction.

    Abstract translation: 半导体器件具有基板,该基板包括在厚度方向上彼此相反方向的主表面和背面,以及具有彼此不同的检测基准轴的第一,第二和第三方向传感器元件。 基板形成有从主表面朝向背面侧凹陷的凹部。 第一方向传感器元件至少部分地设置在凹部内。 第二方向传感器元件设置成在厚度方向上与主表面重叠。

    SEMICONDUCTOR DEVICE
    10.
    发明申请

    公开(公告)号:US20190080988A1

    公开(公告)日:2019-03-14

    申请号:US16042793

    申请日:2018-07-23

    Applicant: ROHM CO., LTD.

    Inventor: Mamoru YAMAGAMI

    Abstract: The present invention provides a semiconductor device capable of being miniaturized and preventing reduction of mountability to a wiring substrate. The semiconductor device includes a conductive support having a support surface and a mounting surface facing opposite sides in a thickness direction z, and an end surface intersecting with the mounting surface and facing outside; a semiconductor element having an element back surface facing the support surface and an electrode formed on the element back surface, in which the electrode is connected to the support surface; and an external terminal conducted to the mounting surface and exposed to the outside; wherein the external terminal includes a Ni layer having P and an Au layer, and respectively connected to and laminated with at least one portion of each of the mounting surface and the end surface.

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