Mask fititng system and method
    1.
    发明申请
    Mask fititng system and method 有权
    面膜适应系统及方法

    公开(公告)号:US20060235877A1

    公开(公告)日:2006-10-19

    申请号:US10556461

    申请日:2005-06-06

    IPC分类号: G06F17/00

    摘要: A mask fitting system (1) for selecting a mask system for a patient includes at least one terminal (6) which receives data unique to a patient. The patient data can be scanned in using a scanner, such as a handheld or 3-D scanner, or the relevant dimensions of the patient can be simply input into the terminal. A database (2) is provided to store mask system data relating to a plurality of potential mask system solutions for the patient. A communication channel (4) is provided by which the data received by the terminal can be compared with mask system data stored in a mask system database, so as to generate a best-fit mask system result. The best-fit result may include one or more mask system recommendations for the patient.

    摘要翻译: 用于选择患者的面罩系统的面罩配合系统(1)包括至少一个接收患者特有的数据的终端(6)。 可以使用扫描仪(例如手持式或三维扫描仪)扫描患者数据,或者将患者的相关尺寸简单地输入终端。 提供数据库(2)以存储与患者的多个潜在掩模系统解决方案相关的掩模系统数据。 提供通信通道(4),通过该通信通道(4)可以将终端接收的数据与存储在掩码系统数据库中的掩码系统数据进行比较,以产生最佳拟合掩码系统结果。 最适合的结果可以包括对患者的一个或多个面罩系统建议。

    Amorphus TiN
    5.
    发明申请
    Amorphus TiN 有权
    无花碱TiN

    公开(公告)号:US20050275101A1

    公开(公告)日:2005-12-15

    申请号:US11143953

    申请日:2005-06-03

    摘要: A modified TDEAT (tetrakisdiethylamino titanium) based MOCVD precursor for deposition of thin amorphous TiN:Si diffusion barrier layers. The TDEAT is doped with 10 at % Si using TDMAS (trisdimethlyaminosilane); the two liquids are found to form a stable solution when mixed together. Deposition occurs via pyrolysis of the vaporised precursor and NH3 on a heated substrate surface. Experimental results show that we have modified the precursor in such a way to reduce gas phase component of the deposition when compared to the unmodified TDEAT-NH3 reaction. Deposition temperatures were the range of 250-450° C. and under a range of process conditions the modified precursor shows improvements in coating conformality, a reduction in resistivity and an amorphous structure, as shown by TEM and XRD analysis. SIMS and scanning AES have shown that the film is essentially stoichiometric in Ti:N ratio and contains low levels of C (˜0.4 at %) and trace levels of incorporated Si (0.01

    摘要翻译: 用于沉积薄无定形TiN:Si扩散阻挡层的改性TDEAT(四十二乙基氨基钛)MOCVD前体。 使用TDMAS(三羟甲基氨基硅烷)掺杂10at%的TDEAT; 当混合在一起时,发现两种液体形成稳定的溶液。 沉积通过在加热的基底表面上热蒸发的前体和NH 3 3发生。 实验结果表明,与未改性的TDEAT-NH3反应相比,我们以这种方式修饰了前体,以减少沉积的气相成分。 沉积温度在250-450℃的范围内,并且在一系列工艺条件下,如TEM和XRD分析所示,改性前体显示涂层保形性的改善,电阻率的降低和无定形结构。 SIMS和扫描AES已经显示该膜基本上是Ti:N比率的化学计量,并且包含低水平的C(〜0.4at%)和痕量的掺入Si(0.01

    Method of forming amorphous TiN by thermal chemical vapor deposition (CVD)
    6.
    发明授权
    Method of forming amorphous TiN by thermal chemical vapor deposition (CVD) 有权
    通过热化学气相沉积(CVD)形成无定形TiN的方法

    公开(公告)号:US07732307B2

    公开(公告)日:2010-06-08

    申请号:US11143953

    申请日:2005-06-03

    IPC分类号: H01L21/20

    摘要: A modified TDEAT (tetrakisdiethylamino titanium) based MOCVD precursor for deposition of thin amorphous TiN:Si diffusion barrier layers. The TDEAT is doped with 10 at % Si using TDMAS (trisdimethlyaminosilane); the two liquids are found to form a stable solution when mixed together. Deposition occurs via pyrolysis of the vaporised precursor and NH3 on a heated substrate surface. Experimental results show that we have modified the precursor in such a way to reduce gas phase component of the deposition when compared to the unmodified TDEAT-NH3 reaction. Deposition temperatures were the range of 250-450° C. and under a range of process conditions the modified precursor shows improvements in coating conformality, a reduction in resistivity and an amorphous structure, as shown by TEM and XRD analysis. SIMS and scanning AES have shown that the film is essentially stoichiometric in Ti:N ratio and contains low levels of C (˜0.4 at %) and trace levels of incorporated Si (0.01

    摘要翻译: 用于沉积薄无定形TiN:Si扩散阻挡层的改性TDEAT(四十二乙基氨基钛)MOCVD前体。 使用TDMAS(三羟甲基氨基硅烷)掺杂10at%的TDEAT; 当混合在一起时,发现两种液体形成稳定的溶液。 沉积通过在加热的基底表面上热蒸发的前体和NH 3发生。 实验结果表明,与未改性的TDEAT-NH3反应相比,我们以这种方式修饰了前体,以减少沉积的气相成分。 沉积温度在250-450℃的范围内,并且在一系列工艺条件下,如TEM和XRD分析所示,改性前体显示涂层保形性的改善,电阻率的降低和无定形结构。 SIMS和扫描AES已经表明,该膜基本上是Ti:N比率的化学计量,并且含有低水平的C(〜0.4原子%)和痕量的掺入Si(0.01

    Method of processing a workpiece
    7.
    发明申请
    Method of processing a workpiece 有权
    加工工件的方法

    公开(公告)号:US20050211666A1

    公开(公告)日:2005-09-29

    申请号:US11088261

    申请日:2005-03-24

    摘要: This invention relates to a method of processing a workpiece in a chamber. Initially a surface of the workpiece is treated by a process which includes supplying a reactive gas to the chamber through a first gas supply and the surface is then further treated using a process gas supplied to the chamber through a second gas supply during the supply of the process gas so that a portion of the process gas flows into the first gas supply from the chamber to mitigate against residual reactive gas entering the chamber during the further treatment step.

    摘要翻译: 本发明涉及一种在室内处理工件的方法。 最初,工件的表面通过包括通过第一气体供应向反应气体提供反应性气体的方法进行处理,然后在供给第二气体供应期间使用供应给室的工艺气体通过第二气体供应进一步处理表面 处理气体,使得一部分工艺气体从腔室流入第一气体供应,以在进一步的处理步骤期间减少进入腔室的剩余反应气体。

    Flash configuration cache
    8.
    发明授权

    公开(公告)号:US6115547A

    公开(公告)日:2000-09-05

    申请号:US403418

    申请日:1995-03-13

    摘要: The present invention employs a generative approach for configuring systems such that a system may be configured based on component or resource requests, or input in the form of need. The present invention provides a constraint-based configuration system using a structural model hierarchy. The structural aspects of the model provide the ability to define a model element as being contained in, or by, another model element. In addition, the structural model provides the ability to identify logical datatype and physical interconnections between elements and establish connections between elements. To configure a system, the present invention accepts input in the form of requests (e.g., component or resource) or needs, such as an expression of a need for a desktop computer system to be used in a CAD (i.e., computer-aided design) environment. Using this information, the present invention configures a system by identifying the resource and component needs, constraints imposed on or by the resources or components identified, and the structural aspects of the system. In one embodiment, a flash configuration cache is utilized to speed up the process of configuring an end product, such as a user computer. In another embodiment, a bundling cache is used to speed up the process of bundling.

    Permanent fogging system for gas mains
    9.
    发明授权
    Permanent fogging system for gas mains 失效
    煤气管道永久雾化系统

    公开(公告)号:US4994307A

    公开(公告)日:1991-02-19

    申请号:US370976

    申请日:1989-06-26

    IPC分类号: C09J4/00 F16L55/164

    CPC分类号: F16L55/164 C09J4/00

    摘要: A permanent fogging system comprising a selected amount of a reactive free-radical polymerizable acrylic or substituted acrylic monomer, a low molecular weight glycol carrier and an effecive amount of a free radical initiator.Another embodiment involves a method of sealing a pipeline by spraying or applying the fogging or misting system described above.

    摘要翻译: 包含选定量的反应性可自由基聚合的丙烯酸或取代的丙烯酸单体,低分子量乙二醇载体和有效量的自由基引发剂的永久雾化体系。 另一实施例涉及一种通过喷涂或施加上述雾化或雾化系统来密封管道的方法。

    VARIABLE ELECTRIC FIELD STRENGTH METAL AND METAL OXIDE MICROPLASMA LAMPS AND FABRICATION
    10.
    发明申请
    VARIABLE ELECTRIC FIELD STRENGTH METAL AND METAL OXIDE MICROPLASMA LAMPS AND FABRICATION 有权
    可变电场强度金属和金属氧化物微波炉和制造

    公开(公告)号:US20110148282A1

    公开(公告)日:2011-06-23

    申请号:US12640884

    申请日:2009-12-17

    IPC分类号: H01J61/30 H01J61/42 H01J9/38

    摘要: Preferred embodiments of the invention provide microcavity plasma lamps having a plurality of metal and metal oxide layers defining a plurality of arrays of microcavities and encapsulated thin metal electrodes. Packaging encloses the plurality of metal and metal oxide layers in plasma medium. The metal and metal oxide layers are configured and arranged to vary the electric field strength and total gas pressure (E/p) in the lamp. The invention also provides methods of manufacturing a microcavity plasma lamp that simultaneously evacuate the volume within the packaging and a volume surrounding the packaging to maintain an insignificant or zero pressure differential across the packaging. The packaging is backfilled with a plasma medium while also maintaining an insignificant or zero pressure differential across the packaging.

    摘要翻译: 本发明的优选实施例提供了具有限定多个微腔阵列和封装的薄金属电极的多个金属和金属氧化物层的微腔等离子体灯。 包装在等离子体介质中包围多个金属和金属氧化物层。 金属和金属氧化物层被配置和布置成改变灯中的电场强度和总气体压力(E / p)。 本发明还提供了制造微腔等离子体灯的方法,其同时抽空包装内的体积和围绕包装的体积,以保持整个包装上的微不足道或零压差。 包装用等离子体介质回填,同时在整个包装上保持不显着或零压差。