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    Semiconductor light emitting device and semiconductor light emitting apparatus having the same
    3.
    发明授权
    Semiconductor light emitting device and semiconductor light emitting apparatus having the same 有权
    半导体发光器件和具有该半导体发光器件的半导体发光器件

    公开(公告)号：US09196812B2

    公开(公告)日：2015-11-24

    申请号：US14543481

    申请日：2014-11-17

    申请人： Samsung Electronics Co., Ltd.

    发明人： Myong Soo Cho ,  Yong-Il Kim ,  Jin Ha Kim ,  Kwang Min Song ,  Sang Seok Lee

    IPC分类号： H01L33/44 ,  H01L33/62 ,  H01L33/20 ,  H01L33/40

    CPC分类号： H01L33/62 ,  H01L33/20 ,  H01L33/38 ,  H01L33/40 ,  H01L33/405 ,  H01L33/44 ,  H01L2224/16225 ,  H01L2224/16245 ,  H01L2933/0091

    摘要： In example embodiments, a semiconductor light emitting device includes a light emitting structure, first and second insulating layers, a barrier metal layer, and an electrode. The light emitting structure includes an active layer between a first and second conductivity-type semiconductor layer. The first insulating layer is on the light emitting structure and defines a first one and a second one of first openings that respectively expose the first and second conductivity-type semiconductor layers. The barrier metal layer is on the first insulating layer and electrically connected to the first and second conductivity-type semiconductor layers through the first and second one of the first openings. The second insulating layer is on the barrier metal layer and defines a second opening that partially exposes the barrier metal layer. The electrode is on the barrier metal layer and electrically connected to the first and second conductivity-type semiconductor layers through the barrier metal layer.

    摘要翻译： 在示例性实施例中，半导体发光器件包括发光结构，第一和第二绝缘层，阻挡金属层和电极。 发光结构包括在第一和第二导电类型半导体层之间的有源层。 第一绝缘层位于发光结构上并且限定分别暴露第一和第二导电类型半导体层的第一开口和第二开口中的第一绝缘层。 阻挡金属层位于第一绝缘层上，并通过第一和第二开口与第一和第二导电型半导体层电连接。 第二绝缘层位于阻挡金属层上并且限定了部分地暴露阻挡金属层的第二开口。 电极在阻挡金属层上，并通过阻挡金属层与第一和第二导电型半导体层电连接。

    Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same
    4.
    再颁专利
    Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same 有权

    公开(公告)号：USRE47417E1

    公开(公告)日：2019-06-04

    申请号：US14835327

    申请日：2015-08-25

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Pun Jae Choi ,  Jin Hyun Lee ,  Ki Yeol Park ,  Myong Soo Cho

    IPC分类号： H01L29/20 ,  F02M19/02 ,  F02M9/127

    摘要： There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer.

    Semiconductor light emitting devices
    5.
    发明授权
    Semiconductor light emitting devices 有权
    半导体发光器件

    公开(公告)号：US09431578B2

    公开(公告)日：2016-08-30

    申请号：US14152128

    申请日：2014-01-10

    申请人： Samsung Electronics Co., Ltd.

    发明人： Myong Soo Cho ,  Tae Hun Kim ,  Young Ho Ryu ,  Young Chul Shin ,  Dong Myung Shin

    IPC分类号： H01L33/00 ,  H01L33/38

    CPC分类号： H01L33/382

    摘要： In one example embodiment, a semiconductor light emitting device includes a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. The second conductivity-type semiconductor layer and the active layer having at least one contact hole exposing a region of the first conductivity-type semiconductor layer. The semiconductor light emitting device further includes at least one columnar structure disposed in the exposed region of the first conductivity-type semiconductor layer within the at least one contact hole. The semiconductor light emitting device further includes a first electrode disposed on the exposed region of the first conductivity-type semiconductor layer in which the at least one columnar structure is disposed, the first electrode being connected to the first conductivity-type semiconductor layer. The semiconductor light emitting device further includes a second electrode connected to the second conductivity-type semiconductor layer.

    摘要翻译： 在一个示例性实施例中，半导体发光器件包括包括第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构。 所述第二导电型半导体层和所述有源层具有暴露所述第一导电型半导体层的区域的至少一个接触孔。 半导体发光器件还包括设置在至少一个接触孔内的第一导电类型半导体层的暴露区域中的至少一个柱状结构。 半导体发光器件还包括设置在其中设置有至少一个柱状结构的第一导电类型半导体层的暴露区域上的第一电极，第一电极连接到第一导电型半导体层。 半导体发光器件还包括连接到第二导电类型半导体层的第二电极。