利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

15 条记录 (耗时 0.023 秒)

    SEMICONDUCTOR MEMORY DEVICES
    1.
    发明申请
    SEMICONDUCTOR MEMORY DEVICES 审中-公开

    公开(公告)号：US20200227418A1

    公开(公告)日：2020-07-16

    申请号：US16732925

    申请日：2020-01-02

    申请人： Samsung Electronics Co., ltd.

    发明人： Hui-Jung KIM ,  Min Hee CHO ,  Junsoo KIM ,  Taehyun An ,  Dongsoo Woo ,  Yoosang HWANG

    IPC分类号： H01L27/108 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L29/66 ,  H01L21/02

    摘要： A semiconductor memory device includes a stack structure having a plurality of layers vertically stacked on a substrate, each layer including, a first bit line and a gate line extending in a first direction, a first semiconductor pattern extending in a second direction between the first bit line and the gate line, the second direction intersecting the first direction, and a second semiconductor pattern adjacent to the gate line across a first gate insulating layer, the second semiconductor pattern extending in the first direction, a first word line adjacent to the first semiconductor pattern and vertically extending in a third direction from the substrate, a second bit line connected to an end of the second semiconductor pattern and vertically extending in the third direction from the substrate, and a second word line connected to another end of the second semiconductor pattern and vertically extending in the third direction.

    Semiconductor memory device
    5.
    发明授权
    Semiconductor memory device 有权

    公开(公告)号：US11289488B2

    公开(公告)日：2022-03-29

    申请号：US16744572

    申请日：2020-01-16

    申请人： Samsung Electronics Co., Ltd.

    发明人： Joongchan Shin ,  Jiyoung Kim ,  Hui-Jung Kim ,  Taehyun An ,  Eunju Cho ,  Hyungeun Choi ,  Sangyeon Han

    IPC分类号： H01L27/108 ,  G11C5/06

    摘要： Disclosed is a semiconductor memory device including a stack structure including layers which are vertically stacked on a substrate and each of which includes a bit line extending in a first direction and a semiconductor pattern extending in a second direction from the bit line, a gate electrode which is in a hole penetrating the stack structure and extending along a stack of semiconductor patterns, a vertical insulating layer covering the gate electrode and filling the hole, and a data storage element electrically connected to the semiconductor pattern. The data storage element includes a first electrode, which is in a first recess of the vertical insulating layer and has a cylindrical shape whose one end is opened, and a second electrode, which includes a first protrusion in a cylinder of the first electrode and a second protrusion in a second recess of the vertical insulating layer.

    Semiconductor memory devices
    7.
    发明授权
    Semiconductor memory devices 有权

    公开(公告)号：US11195836B2

    公开(公告)日：2021-12-07

    申请号：US16732925

    申请日：2020-01-02

    申请人： Samsung Electronics Co., Ltd.

    发明人： Hui-Jung Kim ,  Min Hee Cho ,  Junsoo Kim ,  Taehyun An ,  Dongsoo Woo ,  Yoosang Hwang

    IPC分类号： H01L27/108 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L29/66 ,  H01L21/02

    摘要： A semiconductor memory device includes a stack structure having a plurality of layers vertically stacked on a substrate, each layer including, a first bit line and a gate line extending in a first direction, a first semiconductor pattern extending in a second direction between the first bit line and the gate line, the second direction intersecting the first direction, and a second semiconductor pattern adjacent to the gate line across a first gate insulating layer, the second semiconductor pattern extending in the first direction, a first word line adjacent to the first semiconductor pattern and vertically extending in a third direction from the substrate, a second bit line connected to an end of the second semiconductor pattern and vertically extending in the third direction from the substrate, and a second word line connected to another end of the second semiconductor pattern and vertically extending in the third direction.

    Semiconductor memory device
    10.
    发明授权
    Semiconductor memory device 有权

    公开(公告)号：US12052855B2

    公开(公告)日：2024-07-30

    申请号：US18165692

    申请日：2023-02-07

    申请人： Samsung Electronics Co., Ltd.

    发明人： Hui-Jung Kim ,  Taehyun An ,  Kiseok Lee ,  Keunnam Kim ,  Yoosang Hwang

    IPC分类号： H10B12/00 ,  G11C5/06

    CPC分类号： H10B12/30 ,  G11C5/063

    摘要： A semiconductor memory device includes a stack including a plurality of layers vertically stacked on a substrate, each of the layers including a bit line extending in a first direction and a semiconductor pattern extending from the bit line in a second direction crossing the first direction, a gate electrode along each of the semiconductor patterns stacked, a vertical insulating layer on the gate electrode, a stopper layer, and a data storing element electrically connected to each of the semiconductor patterns. The data storing element includes a first electrode electrically connected to each of the semiconductor patterns, a second electrode on the first electrode, and a dielectric layer between the first and second electrodes. The stopper layer is between the vertical insulating layer and the second electrode.