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公开(公告)号：US10545270B2
公开(公告)日：2020-01-28
申请号：US15576862
申请日：2017-11-08
Abstract: A method of manufacturing a nano metal grating is provided. In the method, a patterned metal oxide film is formed on a surface of the metal layer through the formation of metal oxides in an oxygen ashing process, and the nano metal grating is manufactured by using the patterned metal oxide film as a mask. Thus, a drawback that the metal layer cannot be etched after the metal layer is oxidized is solved, and the metal oxide film is not only used as a mask to manufacture the nano metal grating, but the metal oxide film is also used as a protective layer of the nano metal grating.
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公开(公告)号：US20180342492A1
公开(公告)日：2018-11-29
申请号：US15548097
申请日：2017-06-20
Inventor： Macai Lu
IPC: H01L25/16 , H01L25/075 , H01L33/62 , H01L33/44 , H01L33/48 , H01L33/00 , H01L21/683 , H01L21/66 , H01L33/38
CPC classification number: H01L25/167 , H01L21/67144 , H01L21/6835 , H01L22/20 , H01L22/30 , H01L25/0753 , H01L27/1214 , H01L33/0079 , H01L33/382 , H01L33/44 , H01L33/483 , H01L33/62 , H01L2221/68368 , H01L2221/68386 , H01L2933/0016 , H01L2933/0025 , H01L2933/0066
Abstract: The present invention provides a micro light emitting-diode display panel and a manufacturing method thereof. The first electrode contact and the second electrode contact are alternatively disposed on the base substrate of the micro light-emitting-diode display panel, and the first electrode contact and the second electrode contact are respectively connected with the bottom electrode and the connection electrode of the micro light-emitting-diode. The connection electrode is also connected the top electrode of the micro light-emitting-diode, and the micro light-emitting-diodes can be immediately inspected after the micro-light-emitting-diode is transferred, to reduce the difficulty of detection and product repair, and to improve the product yield.
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公开(公告)号：US09917208B2
公开(公告)日：2018-03-13
申请号：US14786055
申请日：2015-07-14
Inventor： Macai Lu
IPC: H01L29/786 , H01L29/06 , H01L21/266 , H01L21/033 , H01L21/3213
CPC classification number: H01L29/78696 , H01L21/0337 , H01L21/266 , H01L21/32134 , H01L29/0665 , H01L29/78663 , H01L29/7869
Abstract: A TFT, a method for manufacturing the TFT, and an array substrate are disclosed. In the TFT according to the present disclosure, the nano conductive points that are independent from one another are formed in a channel area of the active layer, so that the channel area of the active layer can be divided into a plurality of sub channels that are independent from one another, and an equivalent electric field strength thereof can be increased. The larger the equivalent electric field strength is, the higher the carrier mobility ratio would be, and the larger the saturation current of the TFT would become. Therefore, the TFT with a higher definition and a higher aperture ratio can be manufactured.
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公开(公告)号：US20170040462A1
公开(公告)日：2017-02-09
申请号：US14778090
申请日：2015-08-24
Inventor： Macai Lu
IPC: H01L29/786 , H01L27/12
CPC classification number: H01L29/78618 , H01L27/1222 , H01L27/1274 , H01L27/1288 , H01L29/78675 , H01L29/78696
Abstract: The present invention provides a TFT substrate manufacturing method and a TFT substrate. The TFT substrate manufacturing method of the present invention applies etching to source and drain contact zones of an active layer to have heights thereof lower than a height of a channel zone in the middle and configures the source and drain contact zones in a stepwise form so that charge carriers are affected by an electric field (Vds electric field) that is deviated in a direction away from a poly-silicon/gate insulation layer interface and the migration path thereof is caused to shift away from the poly-silicon/gate insulation layer interface thereby reducing the injection of high energy carriers into the gate insulation layer. Further, due to the formation of the steps in the drain contact zone, the peak intensity of the lateral electric field (Vds electric field) around the drain contact zone and the intensity of a longitudinal electric field (Vgs electric field) of the drain contact zone are both reduced, making a pinch-off point shifted toward an edge of the drain contact zone, reducing drifting of threshold voltage, and improving TFT reliability.
Abstract translation: 本发明提供一种TFT基板的制造方法和TFT基板。 本发明的TFT基板的制造方法对有源层的源极和漏极接触区域进行蚀刻，以使其高度低于中间的沟道区的高度，并且以逐步形式构成源极和漏极接触区域，使得 电荷载流子受到远离多晶硅/栅极绝缘层界面的方向偏离的电场（Vds电场）的影响，并且使其迁移路径从多晶硅/栅极绝缘层界面 从而减少了将高能量载流子注入到栅极绝缘层中。 此外，由于漏极接触区域中的步骤的形成，漏极接触区周围的横向电场（Vds电场）的峰值强度和漏极接触的纵向电场强度（Vgs电场） 区域都被减小，使夹点偏移到漏极接触区的边缘，减少阈值电压的偏移，并提高TFT的可靠性。
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5.发明申请公开(公告)号：US20190207131A1
公开(公告)日：2019-07-04
申请号：US16032031
申请日：2018-07-10
Inventor： Macai Lu
CPC classification number: H01L51/0097 , H01L27/3246 , H01L27/3276 , H01L51/003 , H01L51/5253 , H01L51/56 , H01L2227/323 , H01L2227/326 , H01L2251/5338
Abstract: A stretchable display panel, a manufacturing method of the stretchable display panel and a stretchable display apparatus are provided. The manufacturing method of the stretchable display panel includes: providing a first substrate; defining a plurality of pixel regions and a plurality of stretchable regions in the first substrate; each stretchable region being located between two adjacent pixel regions; forming a pixel device in each pixel region, and forming a conducting wire connecting two adjacent pixel regions in each stretchable region; wherein a length of the conducting wire is greater than a distance between two adjacent pixel regions. In this way, the stretchable display panel may achieve a great amount of deformation, and the display panel can be bent conveniently.
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Patent Agency Ranking
公开(公告)号：US10325942B2
公开(公告)日：2019-06-18
申请号：US15119721
申请日：2016-07-27
Inventor： Macai Lu , Shuli Zhao
IPC: H01L27/12 , H01L21/31 , H01L29/66 , H01L21/77 , H01L21/311
Abstract: The present invention relates to a TFT substrate manufacturing method. The TFT substrate manufacturing method includes: Step 10: applying a first mask-based operation to form a TFT gate electrode pattern on a base plate; Step 20: applying a second mask-based operation to form an active layer pattern and a source/drain metal electrode pattern on the base plate; Step 30: depositing a passivation layer on the base plate, applying a third mask-based operation to define a pixel electrode pattern, conducting etching and photoresist haze operations, and then depositing a pixel electrode; and Step 40: conducting etching or direct photoresist stripping to form the pixel electrode pattern. The TFT substrate manufacturing method according to the present invention provides an effective method of stripping ITO deposited on PR, which is applicable to a three-mask based TFT manufacturing process and could greatly improve manufacturing efficiency and reduce difficulty to thereby effectively enhance capability of the three-mask based manufacturing process.
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公开(公告)号：US10263138B2
公开(公告)日：2019-04-16
申请号：US15548104
申请日：2017-06-20
Inventor： Macai Lu
IPC: H01L33/00 , H01L33/10 , H01L25/16 , H01L33/30 , H01L33/60 , H01L33/20 , H01L27/15 , H01L33/48 , H01L33/52
Abstract: The present invention provides a micro light-emitting-diode display panel and a manufacturing method thereof. The micro light-emitting-diode display panel which presses and fixes the micro light-emitting-diodes into a resin adhesive layer by filling the resin adhesive layer in the pixel groove. Meanwhile, the electrode at the bottom of the micro light-emitting-diode is guided to the top of the micro light-emitting-diode by the connection electrode, making the two electrodes of the micro light-emitting-diode are at the top, to facilitate the connection between the electrodes of the micro light-emitting-diode and the electrode points, which can reduce the difficulty of the electrode bonding of the micro light-emitting-diode, and improve the reliability of the electrode bonding of the micro light-emitting-diode.
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公开(公告)号：US20180342691A1
公开(公告)日：2018-11-29
申请号：US15548104
申请日：2017-06-20
Inventor： Macai Lu
CPC classification number: H01L33/005 , H01L25/167 , H01L27/15 , H01L33/10 , H01L33/20 , H01L33/30 , H01L33/486 , H01L33/52 , H01L33/60
Abstract: The present invention provides a micro light-emitting-diode display panel and a manufacturing method thereof. The micro light-emitting-diode display panel which presses and fixes the micro light-emitting-diodes into a resin adhesive layer by filling the resin adhesive layer in the pixel groove. Meanwhile, the electrode at the bottom of the micro light-emitting-diode is guided to the top of the micro light-emitting-diode by the connection electrode, making the two electrodes of the micro light-emitting-diode are at the top, to facilitate the connection between the electrodes of the micro light-emitting-diode and the electrode points, which can reduce the difficulty of the electrode bonding of the micro light-emitting-diode, and improve the reliability of the electrode bonding of the micro light-emitting-diode.
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公开(公告)号：US20180342643A1
公开(公告)日：2018-11-29
申请号：US15551282
申请日：2017-06-20
Inventor： Macai Lu , Jiangbo Yao
IPC: H01L33/00 , H01L21/683
CPC classification number: H01L33/005 , H01L21/6835 , H01L33/00 , H01L33/0095 , H01L33/20 , H01L2221/68368 , H01L2221/68381
Abstract: The present invention provides an apparatus and a method for transferring micro light-emitting diodes. Said apparatus for transferring the micro light-emitting diodes comprises a main body, and a spraying module, a cooling module and a heating module disposed on said main body. The spraying module sprays metallic adhesive liquid onto the micro light-emitting diodes that wait to transfer, the cooling module cools the metallic adhesive liquid on the wait-to-transfer micro light-emitting diodes, thereby curing the metallic adhesive liquid to adhesively bond the main body with the wait-to-transfer micro light-emitting diodes together implementing the transfer of the micro light-emitting diodes, After transferred to reach the position, the cured metallic adhesive liquid is heated by the heating module, thereby melting the metallic adhesive liquid to separate the main body from the wait-to-transfer micro light-emitting diodes. This is capable of lowering the difficulty of transferring the micro light-emitting diodes, and enhancing the efficiently of transferring the micro light-emitting diodes.
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10.发明授权公开(公告)号：US10424750B2
公开(公告)日：2019-09-24
申请号：US16032031
申请日：2018-07-10
Inventor： Macai Lu
Abstract: A stretchable display panel, a manufacturing method of the stretchable display panel and a stretchable display apparatus are provided. The manufacturing method of the stretchable display panel includes: providing a first substrate; defining a plurality of pixel regions and a plurality of stretchable regions in the first substrate; each stretchable region being located between two adjacent pixel regions; forming a pixel device in each pixel region, and forming a conducting wire connecting two adjacent pixel regions in each stretchable region; wherein a length of the conducting wire is greater than a distance between two adjacent pixel regions. In this way, the stretchable display panel may achieve a great amount of deformation, and the display panel can be bent conveniently.
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