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    Positive photosensitive resin composition, photo-curable dry film and method for producing same, layered product, patterning process, and substrate
    3.
    发明授权
    Positive photosensitive resin composition, photo-curable dry film and method for producing same, layered product, patterning process, and substrate 有权
    正型感光性树脂组合物，光固化型干膜及其制造方法，层叠体，图案化工序，基板等

    公开(公告)号：US09557645B2

    公开(公告)日：2017-01-31

    申请号：US14726909

    申请日：2015-06-01

    申请人： SHIN-ETSU CHEMICAL CO., LTD.

    发明人： Katsuya Takemura ,  Masashi Iio ,  Hiroyuki Urano ,  Takashi Miyazaki

    IPC分类号： G03F7/039 ,  G03F7/075 ,  G03F7/09 ,  G03F7/11 ,  G03F7/20 ,  G03F7/30 ,  G03F7/32 ,  G03F7/40 ,  G03F7/022 ,  G03F7/16 ,  G03F7/023

    CPC分类号： G03F7/039 ,  G03F7/022 ,  G03F7/0226 ,  G03F7/0236 ,  G03F7/0757 ,  G03F7/09 ,  G03F7/11 ,  G03F7/16 ,  G03F7/20 ,  G03F7/30 ,  G03F7/32 ,  G03F7/40

    摘要： A positive photosensitive resin composition containing a polymer compound obtained in the presence of an acid catalyst by condensation of at least a siloxane compound shown by formula (1), a phenol compounds shown by formula (2) and/or formula (3), and aldehydes and ketones shown by formula (4), a photosensitive material capable of generating an acid by light and increasing a dissolution rate in an aqueous alkaline solution, a crosslinker, and a solvent. There can be provided a positive photosensitive resin composition that can remedy the problem of delamination generated on metal wiring, electrode, and substrate such as Cu and Al, especially on substrate SiN, and can form fine pattern having forward tapered shape without generating scum and footing profile in the pattern bottom and on the substrate when the widely used 2.38% TMAH aqueous solution is used as a developer.

    摘要翻译： 一种正性感光性树脂组合物，其含有在酸催化剂存在下得到的高分子化合物，所述高分子化合物通过至少由式（1）表示的硅氧烷化合物，式（2）和/或式（3）所示的酚化合物和 式（4）所示的醛和酮，能够通过光产生酸并增加在碱性水溶液，交联剂和溶剂中的溶解速率的感光材料。 可以提供一种可以解决金属布线，电极以及基板如Cu和Al，特别是在基板SiN上产生的分层问题的正型感光性树脂组合物，并且可以形成具有正锥形形状的精细图案而不产生浮渣和基底 当使用广泛使用的2.38％TMAH水溶液作为显影剂时，图案底部和基底上的轮廓。

    Negative resist composition and patterning process using same
    8.
    发明授权
    Negative resist composition and patterning process using same 有权
    负光刻胶组合物和使用其的图案化工艺

    公开(公告)号：US09310681B2

    公开(公告)日：2016-04-12

    申请号：US14564764

    申请日：2014-12-09

    申请人： SHIN-ETSU CHEMICAL CO., LTD.

    发明人： Jun Hatakeyama ,  Hiroyuki Urano ,  Masashi Iio

    IPC分类号： G03F7/038 ,  G03F7/30 ,  G03F7/40 ,  H01L21/027 ,  C08G8/28

    CPC分类号： G03F7/0384 ,  C08G8/28 ,  G03F7/0382 ,  G03F7/30 ,  G03F7/40 ,  H01L21/0274

    摘要： A negative resist composition containing as base resin a novolak resin having repeating unit “a”, wherein R1 represents a hydrogen atom, a hydroxy group, or any of a linear, a branched, or a cyclic alkyl group, alkoxy group, acyl group, acyloxy group, and alkoxy carbonyl group, these groups having 1 to 6 carbon atoms; and R2 represents a hydrogen atom, any of a linear, a branched, or cyclic alkyl group having 1 to 6 carbon atoms, alkenyl group having 2 to 10 carbon atoms, aryl group having 6 to 10 carbon atoms, which may contain a hydroxy group, an alkoxy group, an ether group, a thioether group, a carboxyl group, an alkoxy carbonyl group, and an acyloxy group. “A” is within the range of 0

    摘要翻译： 含有具有重复单元“a”的酚醛清漆树脂作为基础树脂的负型抗蚀剂组合物，其中R1表示氢原子，羟基或直链，支链或环状烷基，烷氧基，酰基， 酰氧基和烷氧基羰基，这些基团具有1至6个碳原子; R2表示氢原子，碳原子数1〜6的直链状，支链状或环状的烷基，碳原子数2〜10的烯基，碳原子数6〜10的芳基，可以含有羟基 烷氧基，醚基，硫醚基，羧基，烷氧基羰基和酰氧基。 “A”在0

    METHODS FOR MANUFACTURING RESIN STRUCTURE AND MICRO-STRUCTURE
    9.
    发明申请
    METHODS FOR MANUFACTURING RESIN STRUCTURE AND MICRO-STRUCTURE 有权
    制造树脂结构和微结构的方法

    公开(公告)号：US20140072914A1

    公开(公告)日：2014-03-13

    申请号：US13963056

    申请日：2013-08-09

    申请人： SHIN-ETSU CHEMICAL CO., LTD.

    发明人： Yoshinori Hirano ,  Masashi Iio ,  Hideyoshi Yanagisawa

    IPC分类号： G03F7/20

    CPC分类号： G03F7/2024 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/40

    摘要： A resin structure for the formation of a micro-structure is manufactured by (A) applying a composition comprising a polymer, a photoacid generator, and an organic solvent onto a substrate, (B) heating the composition to form a sacrificial film, (C) exposing imagewise the film to first high-energy radiation, (D) developing the film in an alkaline developer to form a sacrificial film pattern, (E) exposing the sacrificial film pattern to UV as second high-energy radiation, and (F) heating the substrate at 100-250° C. The exposure dose of first high-energy radiation in step (C) is up to 250 mJ/cm2. At the end of step (F), the sacrificial film has a sidewall angle of 80°-90° relative to the substrate.

    摘要翻译： 通过（A）将包含聚合物，光致酸产生剂和有机溶剂的组合物涂布在基材上来制造用于形成微结构的树脂结构体，（B）加热组合物以形成牺牲膜，（C （D）在碱性显影剂中显影膜以形成牺牲膜图案，（E）将牺牲膜图案暴露于UV作为第二高能辐射，（F） 在100-250℃下加热基底。步骤（C）中的第一高能量辐射的暴露剂量高达250mJ / cm 2。 在步骤（F）结束时，牺牲膜相对于基底具有80°-90°的侧壁角。