Abstract:
A device includes: a substrate; and a functional element mounted, the functional element including electrodes. The substrate includes a support substrate, and includes a first seed metal, a second seed metal, and a resin component on the support substrate, the first seed metal being disposed in a section opposed to part or all of a first electrode among the electrodes, and being connected to the first electrode by plating, the second seed metal being disposed in a section opposed to part or all of a second electrode among the electrodes, and being connected to the second electrode by plating, and the resin component being disposed in a layer between the functional element and the support substrate, and fixing the functional element to the support substrate, and being provided avoiding a neighborhood of an end of the functional element among opposed side sections of the first and second seed metals.
Abstract:
A semiconductor device includes a base substrate on which a substrate electrode is arranged, and a semiconductor element which includes a chip electrode electrically connected via solder to the substrate electrode and in which a light absorbing layer is formed on a lower surface side.
Abstract:
There is provided a radiation detector including: a plurality of photoelectric conversion devices, each photoelectric conversion device formed at least partially within an embedding layer and having a light receiving surface situated at least partially outside of the embedding layer, and a plurality of scintillator crystals, at least a first scintillator crystal of the plurality of scintillator crystals in contact with at least one light receiving surface at a proximal end, wherein a cross-section of the first scintillator crystal at the proximal end is smaller than a cross-section of the first scintillator crystal at a distal end.
Abstract:
A device includes: a substrate; and a functional element mounted, the functional element including electrodes. The substrate includes a support substrate, and includes a first seed metal, a second seed metal, and a resin component on the support substrate, the first seed metal being disposed in a section opposed to part or all of a first electrode among the electrodes, and being connected to the first electrode by plating, the second seed metal being disposed in a section opposed to part or all of a second electrode among the electrodes, and being connected to the second electrode by plating, and the resin component being disposed in a layer between the functional element and the support substrate, and fixing the functional element to the support substrate, and being, provided avoiding a neighborhood of an end of the functional element among, opposed side sections of the first and second seed metals.
Abstract:
A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.
Abstract:
A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.
Abstract:
A semiconductor device includes a base substrate on which a substrate electrode is arranged, and a semiconductor element which includes a chip electrode electrically connected via solder to the substrate electrode and in which a light absorbing layer is formed on a lower surface side.
Abstract:
A device includes: a substrate; and a functional element mounted, the functional element including electrodes. The substrate includes a support substrate, and includes a first seed metal, a second seed metal, and a resin component on the support substrate, the first seed metal being disposed in a section opposed to part or all of a first electrode among the electrodes, and being connected to the first electrode by plating, the second seed metal being disposed in a section opposed to part or all of a second electrode among the electrodes, and being connected to the second electrode by plating, and the resin component being disposed in a layer between the functional element and the support substrate, and fixing the functional element to the support substrate, and being, provided avoiding a neighborhood of an end of the functional element among, opposed side sections of the first and second seed metals.
Abstract:
There is provided a radiation detector including: a plurality of photoelectric conversion devices, each photoelectric conversion device formed at least partially within an embedding layer and having a light receiving surface situated at least partially outside of the embedding layer, and a plurality of scintillator crystals, at least a first scintillator crystal of the plurality of scintillator crystals in contact with at least one light receiving surface at a proximal end, wherein a cross-section of the first scintillator crystal at the proximal end is smaller than a cross-section of the first scintillator crystal at a distal end.
Abstract:
A device includes: a substrate; and a functional element mounted, the functional element including electrodes. The substrate includes a support substrate, and includes a first seed metal, a second seed metal, and a resin component on the support substrate, the first seed metal being disposed in a section opposed to part or all of a first electrode among the electrodes, and being connected to the first electrode by plating, the second seed metal being disposed in a section opposed to part or all of a second electrode among the electrodes, and being connected to the second electrode by plating, and the resin component being disposed in a layer between the functional element and the support substrate, and fixing the functional element to the support substrate, and being provided avoiding a neighborhood of an end of the functional element among opposed side sections of the first and second seed metals.