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1.发明申请公开(公告)号：US20190152769A1
公开(公告)日：2019-05-23
申请号：US16240415
申请日：2019-01-04
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Alessandro TOCCHIO , Lorenzo CORSO
Abstract: An integrated semiconductor device includes: a MEMS structure; an ASIC electronic circuit; and conductive interconnection structures electrically coupling the MEMS structure to the ASIC electronic circuit. The MEMS structure and the ASIC electronic circuit are integrated starting from a same substrate including semiconductor material; wherein the MEMS structure is formed at a first surface of the substrate, and the ASIC electronic circuit is formed at a second surface of the substrate, vertically opposite to the first surface in a direction transverse to a horizontal plane of extension of the first surface and of the second surface.
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公开(公告)号：US20210293597A1
公开(公告)日：2021-09-23
申请号：US17204664
申请日：2021-03-17
Applicant: STMICROELECTRONICS S.r.l.
Inventor： Gabriele GATTERE , Francesco RIZZINI , Luca GUERINONI , Lorenzo CORSO , Domenico GIUSTI
IPC: G01F1/84
Abstract: Embodiments of a Coriolis-force-based flow sensing device and embodiments of methods for manufacturing embodiments of the Coriolis-force-based flow sensing device, comprising the steps of: forming a driving electrode; forming, on the driving electrode, a first sacrificial region; forming, on the first sacrificial region, a first structural portion with a second sacrificial region buried therein; forming openings for selectively etching the second sacrificial region; forming, within the openings, a porous layer having pores; removing the second sacrificial region through the pores of the porous layer, forming a buried channel; growing, on the porous layer and not within the buried channel, a second structural portion that forms, with the first structural region, a structural body; selectively removing the first sacrificial region thus suspending the structural body on the driving electrode.
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公开(公告)号：US20240199408A1
公开(公告)日：2024-06-20
申请号：US18590533
申请日：2024-02-28
Applicant: STMICROELECTRONICS S.r.l.
Inventor： Giorgio ALLEGATO , Lorenzo CORSO , Ilaria GELMI , Carlo VALZASINA
CPC classification number: B81B3/0051 , B81C1/00595 , B81B2201/0235 , B81B2201/0242 , B81C2201/0198
Abstract: A process for manufacturing a MEMS device includes forming a first structural layer of a first thickness on a substrate. First trenches are formed through the first structural layer, and masking regions separated by first openings are formed on the first structural layer. A second structural layer of a second thickness is formed on the first structural layer in direct contact with the first structural layer at the first openings and forms, together with the first structural layer, thick structural regions having a third thickness equal to the sum of the first and the second thicknesses. A plurality of second trenches are formed through the second structural layer, over the masking regions, and third trenches are formed through the first and the second structural layers by removing selective portions of the thick structural regions.
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公开(公告)号：US20170297906A1
公开(公告)日：2017-10-19
申请号：US15638001
申请日：2017-06-29
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Giorgio ALLEGATO , Barbara SIMONI , Carlo VALZASINA , Lorenzo CORSO
CPC classification number: B81B7/0074 , B81B7/007 , B81B7/008 , B81B7/02 , B81B2201/0235 , B81B2201/0242 , B81B2207/012 , B81B2207/015 , B81B2207/07 , B81B2207/092 , B81B2207/093 , B81B2207/096 , B81B2207/097 , B81C1/0023 , B81C2203/0118 , B81C2203/0792 , H01L2224/18 , H01L2924/0002 , H01L2924/00
Abstract: A microelectromechanical device includes: a body accommodating a microelectromechanical structure; and a cap bonded to the body and electrically coupled to the microelectromechanical structure through conductive bonding regions. The cap including a selection module, which has first selection terminals coupled to the microelectromechanical structure, second selection terminals, and at least one control terminal, and which can be controlled through the control terminal to couple the second selection terminals to respective first selection terminals according, selectively, to one of a plurality of coupling configurations corresponding to respective operating conditions.
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公开(公告)号：US20230061430A1
公开(公告)日：2023-03-02
申请号：US17896692
申请日：2022-08-26
Applicant: STMICROELECTRONICS S.r.l.
Inventor： Paolo FERRARI , Lorenzo CORSO , Flavio Francesco VILLA , Silvia NICOLI , Luca LAMAGNA
Abstract: Method for manufacturing a micro-electro-mechanical system, MEMS, integrating a first MEMS device and a second MEMS device. The first MEMS device is a capacitive pressure sensor and the second MEMS device is an inertial sensor. The steps of manufacturing the first and second MEMS devices are, at least partly, shared with each other, resulting in a high degree of integration on a single die, and allowing to implement a manufacturing process with high yield and controlled costs.
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Patent Agency Ranking
公开(公告)号：US20210363000A1
公开(公告)日：2021-11-25
申请号：US17320993
申请日：2021-05-14
Applicant: STMicroelectronics S.r.l.
Inventor： Giorgio ALLEGATO , Lorenzo CORSO , Ilaria GELMI , Carlo VALZASINA
Abstract: A process for manufacturing a MEMS device includes forming a first structural layer of a first thickness on a substrate. First trenches are formed through the first structural layer, and masking regions separated by first openings are formed on the first structural layer. A second structural layer of a second thickness is formed on the first structural layer in direct contact with the first structural layer at the first openings and forms, together with the first structural layer, thick structural regions having a third thickness equal to the sum of the first and the second thicknesses. A plurality of second trenches are formed through the second structural layer, over the masking regions, and third trenches are formed through the first and the second structural layers by removing selective portions of the thick structural regions.
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公开(公告)号：US20210155472A1
公开(公告)日：2021-05-27
申请号：US17164546
申请日：2021-02-01
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Alessandro TOCCHIO , Lorenzo CORSO
Abstract: An integrated semiconductor device includes: a MEMS structure; an ASIC electronic circuit; and conductive interconnection structures electrically coupling the MEMS structure to the ASIC electronic circuit. The MEMS structure and the ASIC electronic circuit are integrated starting from a same substrate including semiconductor material; wherein the MEMS structure is formed at a first surface of the substrate, and the ASIC electronic circuit is formed at a second surface of the substrate, vertically opposite to the first surface in a direction transverse to a horizontal plane of extension of the first surface and of the second surface.
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8.发明公开公开(公告)号：US20240154599A1
公开(公告)日：2024-05-09
申请号：US18505574
申请日：2023-11-09
Applicant: STMICROELECTRONICS S.r.l.
Inventor： Federico VERCESI , Lorenzo CORSO , Giorgio ALLEGATO , Gabriele GATTERE
CPC classification number: H03H9/1021 , B81B7/0038 , B81C1/00285 , H03H3/02 , H03H9/17 , B81B2201/0271 , B81B2203/0118 , B81B2203/0315 , B81B2203/04 , B81B2207/07 , B81C2201/0105 , B81C2203/0118 , H03H2003/022 , H03H2003/027 , H03H2009/155
Abstract: A microelectromechanical resonator device has: a main body, with a first surface and a second surface, opposite to one another along a vertical axis, and made of a first layer and a second layer, arranged on the first layer; a cap, having a respective first surface and a respective second surface, opposite to one another along the vertical axis, and coupled to the main body by bonding elements; and a piezoelectric resonator structure formed by: a mobile element, constituted by a resonator portion of the first layer, suspended in cantilever fashion with respect to an internal cavity provided in the second layer and moreover, on the opposite side, with respect to a housing cavity provided in the cap; a region of piezoelectric material, arranged on the mobile element on the first surface of the main body; and a top electrode, arranged on the region of piezoelectric material, the mobile element constituting a bottom electrode of the piezoelectric resonator structure.
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9.发明公开公开(公告)号：US20240140783A1
公开(公告)日：2024-05-02
申请号：US18489729
申请日：2023-10-18
Applicant: STMICROELECTRONICS S.r.l.
Inventor： Mark Andrew SHAW , Lorenzo CORSO , Matteo GARAVAGLIA , Giorgio ALLEGATO
CPC classification number: B81B7/0074 , B81C1/0023 , B81B2207/012 , B81C2203/0792
Abstract: A device and method for manufacturing a device comprising two semiconductor dice. The device is formed by a first die and a second die. The first die is of semiconductor material and integrates electronic components. The second die has a main surface, forms patterned structures, and is bonded to the first die. Internal electrical coupling structures electrically couple the main surface of the first die to the second die. External connection regions extend on the main surface of the first die. A package packages the first die, the second die and the internal electrical coupling structures and partially surrounds the external connection regions, the external connection regions partially protruding from the package.
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公开(公告)号：US20220380203A1
公开(公告)日：2022-12-01
申请号：US17744312
申请日：2022-05-13
Applicant: STMICROELECTRONICS S.r.l.
Inventor： Federico VERCESI , Luca SEGHIZZI , Laura OGGIONI , Lorenzo CORSO
Abstract: A process for manufacturing a combined microelectromechanical device includes forming, in a die of semiconductor material, at least a first and a second microelectromechanical structure, performing a first bonding phase to bond a cap to the die via a bonding region or adhesive to define at least a first and a second cavity at the first and, respectively, second microelectromechanical structures, the cavities being at a controlled pressure, forming an access channel through the cap in fluidic communication with the first cavity to control the pressure value inside the first cavity in a distinct manner with respect to a respective pressure value inside the second cavity, and performing a second bonding phase, after which the bonding region deforms to hermetically close the first cavity with respect to the access channel.
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