公开(公告)号：US5294809A

公开(公告)日：1994-03-15

申请号：US65338

申请日：1993-05-24

申请人： Herbert Goronkin ,  Saied N. Tehrani ,  Jun Shen ,  Xiaodong T. Zhu

发明人： Herbert Goronkin ,  Saied N. Tehrani ,  Jun Shen ,  Xiaodong T. Zhu

IPC分类号： H01L29/88

CPC分类号： B82Y30/00 ,  B82Y10/00 ,  H01L29/882

摘要： A resonant tunneling diode having a quantum well sandwiched between first and second tunnel barrier layers and the quantum well and tunnel barrier layers sandwiched between an injection layer and a collector layer. The improvement includes a relatively thin layer of semiconductor material sandwiched between either the first tunnel barrier layer and the injection layer or the first tunnel barrier layer and the quantum well. The thin semiconductor layer has a valence band with an energy level lower than the valence band of the first tunnel barrier layer so as to prevent minority carriers from travelling toward the injection layer.

摘要翻译： 一种谐振隧道二极管，其具有夹在第一和第二隧道势垒层之间的量子阱以及夹在注入层和集电极层之间的量子阱和隧道势垒层。 该改进包括夹在第一隧道势垒层和注入层之间的相对薄的半导体材料层或第一隧道势垒层和量子阱。 薄半导体层具有能级低于第一隧道势垒层的价带的价带，以防止少数载流子朝向注入层行进。

公开(公告)号：US5563087A

公开(公告)日：1996-10-08

申请号：US494465

申请日：1995-06-26

申请人： Jun Shen ,  Saied N. Tehrani ,  Herbert Goronkin ,  Xiaodong T. Zhu

发明人： Jun Shen ,  Saied N. Tehrani ,  Herbert Goronkin ,  Xiaodong T. Zhu

IPC分类号： H01L21/8244 ,  H01L27/11 ,  H01L21/70 ,  H01L27/00

CPC分类号： B82Y30/00 ,  B82Y10/00 ,  H01L27/11 ,  Y10S438/979

摘要： An SRAM including first and second RITDs each formed with a heterostructure including a GaSb active layer sandwiched between AlSb barrier layers, which are sandwiched between InAs layers with each RITD having a contact connected to a first of the InAs layers. A TD including an AlSb layer sandwiched between InAS layers. A second InAs layer for each of the RITDs being integrally formed with a first InAs layer of the TD and a read/write terminal connected to a second InAs layer of the TD.

摘要翻译： 一种包括第一和第二RITD的SRAM，每个RITD均形成有异质结构，该异质结构包括夹在AlSb阻挡层之间的GaSb活性层，它们夹在InAs层之间，每个RITD具有连接到第一InAs层的触点。 包括夹在InAS层之间的AlSb层的TD。 用于与TD的第一InAs层整体形成的每个RITD的第二InAs层和连接到TD的第二InAs层的读/写端子。

公开(公告)号：US5414274A

公开(公告)日：1995-05-09

申请号：US96387

申请日：1993-07-26

申请人： Herbert Goronkin ,  Saied N. Tehrani ,  Jun Shen ,  Xiaodong T. Zhu

发明人： Herbert Goronkin ,  Saied N. Tehrani ,  Jun Shen ,  Xiaodong T. Zhu

IPC分类号： H01L29/06 ,  H01L29/68 ,  H01L29/772 ,  H01L29/205 ,  H01L29/88

CPC分类号： H01L29/772

摘要： A quantum multifunction transistor including a plurality of conduction layers of semiconductor material with a tunnel barrier layer sandwiched therebetween. The conduction layers each being very thin to form discrete energy levels, and the material being chosen so that discrete energy levels therein are not aligned across the tunnel barrier layer in an equilibrium state. A gate coupled to a portion of one of the conduction layers for aligning, in response to a voltage applied thereto, discrete energy levels in the conduction layers across the tunnel barrier layer, whereby majority carrier current flows through the transistor. Application of a higher voltage to the gate results in minority carrier current flow through the transistor.

摘要翻译： 一种量子多功能晶体管，包括多个导电层的半导体材料，其间夹有隧道势垒层。 导电层各自非常薄以形成离散的能级，并且选择材料使得其中的离散能级在平衡状态下不跨越隧道势垒层对准。 耦合到导电层之一的一部分的栅极，用于响应于施加到其上的电压，对准穿过隧道势垒层的导电层中的离散能级，从而多数载流子流过晶体管。 向栅极施加较高的电压导致少数载流子流过晶体管。

公开(公告)号：US5552330A

公开(公告)日：1996-09-03

申请号：US386171

申请日：1995-02-09

申请人： Saied N. Tehrani ,  Herbert Goronkin ,  Jun Shen ,  Xiaodong T. Zhu

发明人： Saied N. Tehrani ,  Herbert Goronkin ,  Jun Shen ,  Xiaodong T. Zhu

IPC分类号： H01L29/68 ,  H01L21/20 ,  H01L21/334 ,  H01L27/06 ,  H01L29/205 ,  H01L29/76 ,  H01L21/265 ,  H01L21/44

CPC分类号： B82Y30/00 ,  B82Y10/00 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02576 ,  H01L27/0605 ,  H01L29/66939 ,  H01L29/7606

摘要： A resonant tunneling FET including a heterostructure FET with a channel layer having a first current contact and a control contact operatively coupled thereto and a resonant tunneling device, including a quantum well layer sandwiched between barrier layers with a resonant tunneling layer affixed to an opposite side of one barrier layer, operably affixed to the heterostructure FET to form a second current contact. The resonant tunneling FET being constructed from a material system which allows the fabrication of additional devices on the same substrate.

摘要翻译： 一种谐振隧穿FET，其包括具有第一电流接触的通道层和可操作地耦合到其上的控制触点的异质结构FET，以及谐振隧穿装置，其包括夹在阻挡层之间的量子阱层，其中谐振隧穿层固定在 一个阻挡层，可操作地固定到异质结构FET以形成第二电流接触。 谐振隧道FET由材料系统构成，其允许在同一衬底上制造附加器件。

公开(公告)号：US5489785A

公开(公告)日：1996-02-06

申请号：US209789

申请日：1994-03-11

申请人： Saied N. Tehrani ,  Jun Shen ,  Herbert Goronkin ,  Xiaodong T. Zhu

发明人： Saied N. Tehrani ,  Jun Shen ,  Herbert Goronkin ,  Xiaodong T. Zhu

IPC分类号： H01L29/68 ,  H01L29/06 ,  H01L29/205 ,  H01L29/737 ,  H01L27/12

CPC分类号： H01L29/7376 ,  B82Y10/00

摘要： A band-to-band resonant tunneling transistor including GaSb and InAs resonant tunneling layers separated by a thin barrier layer and a second InAs layer separated from the GaSb layer by another thin barrier layer. A terminal on the InAs resonant tunneling layer and a terminal on the second InAs layer. Leakage current reduction layers are positioned on the second InAs layer with a bias terminal positioned thereon. The InAs resonant tunneling layer has a plurality of quantized states which are misaligned with the ground state of the GaSb layer in a quiescent state, each of the quantized states of the InAs resonant tunneling layer are movable into alignment with the ground state of the GaSb layer to provide current flow through the transistor with the application of a specific potential to the terminal on the second InAs layer.

摘要翻译： 包括GaSb和InAs谐振隧道层的带对带谐振隧穿晶体管，其由薄的阻挡层和由另一个薄的阻挡层与GaSb层分离的第二InAs层隔开。 InAs谐振隧穿层上的一个端子和第二个InAs层上的一个端子。 漏电流减少层位于第二InAs层上，偏置端子位于其上。 InAs谐振隧穿层具有与处于静止状态的GaSb层的基态不对准的多个量化状态，InAs谐振隧穿层的每个量子化状态可移动地与GaSb层的基态对准 以通过向第二InAs层上的端子施加特定电位来提供流过晶体管的电流。

公开(公告)号：US5920500A

公开(公告)日：1999-07-06

申请号：US702781

申请日：1996-08-23

申请人： Saied N. Tehrani ,  Xiaodong T. Zhu ,  Eugene Chen ,  Herbert Goronkin

发明人： Saied N. Tehrani ,  Xiaodong T. Zhu ,  Eugene Chen ,  Herbert Goronkin

IPC分类号： G11C11/15 ,  G11C11/14 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/22 ,  H01L43/08

CPC分类号： G11C11/14 ,  H01L27/222

摘要： A magnetic random access memory (10) has a plurality of stacked memory cells on semiconductor substrate (11), each cell basically having a portion of magnetic material (12), a word line (13), and sense line (14). Upper sense line (22) is electrically coupled to lower sense line (12) via conductor line (23) with ohmic contacts. In order to read and store states in the memory cell, lower and upper word lines (13, 18) are activated, thereby total magnetic field is applied to portion of magnetic material (11). This stacked memory structure allows magnetic random access memory (10) to integrate more memory cells on semiconductor substrate (11).

摘要翻译： 磁性随机存取存储器（10）在半导体衬底（11）上具有多个堆叠的存储单元，每个单元基本上具有一部分磁性材料（12），字线（13）和感测线（14）。 上感测线（22）经由导体线（23）与欧姆接触电耦合到下感测线（12）。 为了读取和存储存储单元中的状态，上下文字线（13,18）被激活，从而将总磁场施加到磁性材料（11）的一部分。 这种堆叠式存储器结构允许磁性随机存取存储器（10）将更多的存储器单元集成在半导体衬底（11）上。

公开(公告)号：US5978257A

公开(公告)日：1999-11-02

申请号：US28426

申请日：1998-02-24

申请人： Xiaodong T. Zhu ,  Herbert Goronkin ,  Saied N. Tehrani

发明人： Xiaodong T. Zhu ,  Herbert Goronkin ,  Saied N. Tehrani

IPC分类号： G11C11/15 ,  G11C11/16 ,  G11C11/56 ,  H01L21/8246

CPC分类号： H01L27/228 ,  B82Y10/00 ,  G11C11/15 ,  G11C11/16 ,  G11C11/5607 ,  H01L27/224 ,  G11C2211/5615 ,  G11C2211/5616

摘要： A multi-state, multi-layer magnetic memory cell including a first conductor, a first magnetic layer contacting the first conductor, an insulating layer on the first magnetic layer, a second magnetic layer on the insulating layer, a second conductor contacting the second magnetic layer, and a word line adjacent, or in contact with, the cell so as to provide a magnetic field to partially switch magnetic vectors along the length of the first magnetic layer. Information is stored by passing one current through the word line and a second current through the first and second conductors sufficient to switch vectors in the first and second magnetic layers. Sensing is accomplished by passing a read current through a word line sufficient to switch one layer (and not the other) and a sense current through the cell, by way of the first and second conductors, and measuring a resistance across the cell.

摘要翻译： 一种多态多层磁存储单元，包括第一导体，与第一导体接触的第一磁性层，第一磁性层上的绝缘层，绝缘层上的第二磁性层，与第二磁性体接触的第二导体 层，以及与单元相邻或接触的字线，以便提供磁场以沿着第一磁性层的长度部分地切换磁矢量。 通过使一条电流通过字线并通过第一和第二导体的第二电流足以切换第一和第二磁性层中的矢量来存储信息。 通过使读取电流通过足以通过第一和第二导体切换一层（而不是另一层）和感测电流通过电池的读取电流，并测量电池两端的电阻来实现感测。

公开(公告)号：US5734605A

公开(公告)日：1998-03-31

申请号：US711751

申请日：1996-09-10

申请人： Xiaodong T. Zhu ,  Herbert Goronkin ,  Saied N. Tehrani

发明人： Xiaodong T. Zhu ,  Herbert Goronkin ,  Saied N. Tehrani

IPC分类号： G11C11/15 ,  G11C11/16 ,  G11C11/56 ,  H01L21/8246

CPC分类号： H01L27/228 ,  B82Y10/00 ,  G11C11/15 ,  G11C11/16 ,  G11C11/5607 ,  H01L27/224 ,  G11C2211/5615 ,  G11C2211/5616

摘要： A multi-state, multi-layer magnetic memory cell including a first conductor, a first magnetic layer contacting the first conductor, an insulating layer on the first magnetic layer, a second magnetic layer on the insulating layer, a second conductor contacting the second magnetic layer, and a word line adjacent, or in contact with, the cell so as to provide a magnetic field to partially switch magnetic vectors along the length of the first magnetic layer. Information is stored by passing one current through the word line and a second current through the first and second conductors sufficient to switch vectors in the first and second magnetic layers. Sensing is accomplished by passing a read current through a word line sufficient to switch one layer (and not the other) and a sense current through the cell, by way of the first and second conductors, and measuring a resistance across the cell.

摘要翻译： 一种多态多层磁存储单元，包括第一导体，与第一导体接触的第一磁性层，第一磁性层上的绝缘层，绝缘层上的第二磁性层，与第二磁性体接触的第二导体 层，以及与单元相邻或接触的字线，以便提供磁场以沿着第一磁性层的长度部分地切换磁矢量。 通过使一条电流通过字线并通过第一和第二导体的第二电流足以切换第一和第二磁性层中的矢量来存储信息。 通过使读取电流通过足以通过第一和第二导体切换一层（而不是另一层）和感测电流通过电池的读取电流，并测量电池两端的电阻来实现感测。

公开(公告)号：US5734606A

公开(公告)日：1998-03-31

申请号：US767240

申请日：1996-12-13

申请人： Saied N. Tehrani ,  Eugene Chen ,  Ronald N. Legge ,  Xiaodong T. Zhu ,  Mark Durlam

发明人： Saied N. Tehrani ,  Eugene Chen ,  Ronald N. Legge ,  Xiaodong T. Zhu ,  Mark Durlam

IPC分类号： G11C11/15 ,  H01L21/8246 ,  H01L27/105

CPC分类号： G11C11/15

摘要： New types of memory cell structures (20, 40) for a magnetic random access memory are provided. A memory cell (20, 40) has a plurality of cell pieces (21-24) where digital information is stored. Each cell piece is formed by magnetic layers (27, 28) separated by a conductor layer (29). A word line (25, 41) is placed adjacent each cell piece for winding around cell pieces (21-24) and meandering on a same plane on cell pieces (21-24), for example. The invention attains less power consumption and effective usage for a word current.

摘要翻译： 提供了用于磁随机存取存储器的新型存储单元结构（20,40）。 存储单元（20,40）具有存储数字信息的多个单元（21-24）。 每个电池片由通过导体层（29）分开的磁性层（27,28）形成。 例如，字线（25,41）被放置在每个单元片附近，用于绕在单元片（21-24）上并在单元片（21-24）上的同一平面上蜿蜒曲折。 本发明实现了对于字电流的更少的功耗和有效的使用。

公开(公告)号：US5838607A

公开(公告)日：1998-11-17

申请号：US723162

申请日：1996-09-25

申请人： Xiaodong T. Zhu ,  Saied N. Tehrani ,  Eugene Chen ,  Mark Durlam

发明人： Xiaodong T. Zhu ,  Saied N. Tehrani ,  Eugene Chen ,  Mark Durlam

IPC分类号： G11C11/16 ,  G11C11/56 ,  H01F10/32 ,  G11C11/00 ,  H01L29/161

CPC分类号： B82Y25/00 ,  G11C11/16 ,  G11C11/5607 ,  H01F10/324

摘要： Spin polarized apparatus includes a spin polarizing section of magnetic material with an electron input port and a polarized electron port and a transport section of magnetic material with a polarized electron input port electrically coupled to the polarized electron port of the polarizing section and an electron output port. Electrons traversing the polarizing section all have similar spin directions at the output dependent upon the magnetization direction of the polarizing section. Electrons traversing the transport section all have spins in a first direction at the output. The cell has a low resistance when the magnetization direction of the polarizing section is in the first direction (electrons entering the transport section all have spins in the first direction) and a high resistance when the magnetization direction is in an opposite direction (electrons entering the transport section all have spins in the opposite direction).

摘要翻译： 旋转极化装置包括具有电子输入端口和偏振电子端口的磁性材料的自旋极化部分和具有电耦合到偏振部分的偏振电子端口的偏振电子输入端口的磁性材料的传送部分和电子输出端口 。 穿过偏振部分的电子根据偏振部分的磁化方向在输出处都具有相似的自旋方向。 穿过传送部分的电子都在输出端处沿着第一方向旋转。 当偏振片的磁化方向处于第一方向（进入输送部分的电子全部在第一方向上具有自旋）时，电池具有低电阻，当磁化方向为相反方向（电子进入 运输部分都沿相反方向旋转）。