ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD FOR MANUFACTURING THE SAME
    5.
    发明申请
    ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD FOR MANUFACTURING THE SAME 有权
    有机发光二极管显示器及其制造方法

    公开(公告)号:US20150144930A1

    公开(公告)日:2015-05-28

    申请号:US14608798

    申请日:2015-01-29

    Abstract: An organic light emitting diode (OLED) display includes: a substrate; an organic light emitting diode formed on the substrate; a metal oxide layer formed on the substrate and covering the organic light emitting diode; a first inorganic layer formed on the metal oxide layer and covering a relatively larger area than the metal oxide layer; a first organic layer formed on the first inorganic layer and covering a relatively smaller area than the first inorganic layer; and a second inorganic layer formed on the first organic layer, covering a relatively larger area than the first organic layer, and contacting the first inorganic layer at an edge of the second inorganic layer.

    Abstract translation: 有机发光二极管(OLED)显示器包括:基板; 形成在所述基板上的有机发光二极管; 形成在所述基板上并覆盖所述有机发光二极管的金属氧化物层; 形成在所述金属氧化物层上并覆盖比所述金属氧化物层相对较大面积的第一无机层; 形成在所述第一无机层上并覆盖比所述第一无机层相对较小的区域的第一有机层; 以及形成在所述第一有机层上的第二无机层,其覆盖比所述第一有机层相对更大的面积,并且在所述第二无机层的边缘处与所述第一无机层接触。

    FLEXIBLE DISPLAY AND METHOD OF MANUFACTURING THE SAME
    8.
    发明申请
    FLEXIBLE DISPLAY AND METHOD OF MANUFACTURING THE SAME 审中-公开
    柔性显示及其制造方法

    公开(公告)号:US20130341629A1

    公开(公告)日:2013-12-26

    申请号:US13975054

    申请日:2013-08-23

    Abstract: A substrate for a flexible display is disclosed. The substrate has a film stress range that does not affect an electronic device such as a thin film transistor, and includes a barrier layer having excellent oxygen and moisture blocking characteristics, and a method of manufacturing the substrate. The substrate includes: a plastic substrate having a glass transition temperature from about 350° C. to about 500° C.; and a barrier layer disposed on the plastic substrate, having a multi-layer structure, wherein at least one silicon oxide layer and at least one silicon nitride layer are alternately stacked on each other, and having a film stress from about −200 MPa to about 200 MPa due to the at least one silicon oxide layer and the at least one silicon nitride layer.

    Abstract translation: 公开了一种用于柔性显示器的基板。 基板具有不影响诸如薄膜晶体管的电子器件的膜应力范围,并且包括具有优异的氧气和湿气阻隔特性的阻挡层,以及制造该基板的方法。 衬底包括:玻璃化转变温度为约350℃至约500℃的塑料衬底; 以及设置在所述塑料基板上的阻挡层,具有多层结构,其中至少一个氧化硅层和至少一个氮化硅层彼此交替堆叠,并且膜应力为约-200MPa至约 由于至少一个氧化硅层和至少一个氮化硅层,200MPa。

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