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    Display device
    1.
    发明授权
    Display device 有权

    公开(公告)号：US11380753B2

    公开(公告)日：2022-07-05

    申请号：US16899782

    申请日：2020-06-12

    Applicant: Samsung Display Co., LTD.

    Inventor： Sang Gab Kim ,  Tae Sung Kim ,  Joon Geol Lee ,  Hyun Min Cho ,  Dae Won Choi ,  Yun Jong Yeo

    IPC: H01L27/32 ,  H01L51/00

    Abstract: A display device includes a base substrate; an organic layer disposed on the base substrate; and a first conductive layer disposed on the organic layer, wherein the first conductive layer includes a plurality of stacked films, the plurality of stacked films include a first conductive film disposed directly on the organic layer and a second conductive film disposed on the first conductive film, and the first conductive film has an oxygen concentration higher than an oxygen concentration of the second conductive film.

    Thin film transistor array panel
    3.
    发明授权
    Thin film transistor array panel 有权
    薄膜晶体管阵列面板

    公开(公告)号：US09455333B2

    公开(公告)日：2016-09-27

    申请号：US14809830

    申请日：2015-07-27

    Applicant: Samsung Display Co., Ltd.

    Inventor： Je Hun Lee ,  Jun Ho Song ,  Yun Jong Yeo ,  Hwa Dong Jung

    IPC: H01L29/78 ,  H01L29/08 ,  H01L27/12 ,  H01L29/66 ,  H01L29/786 ,  H01L29/40 ,  H01L21/28 ,  H01L21/268 ,  H01L21/308 ,  H01L21/02 ,  H01L29/423 ,  H01L29/86

    CPC classification number: H01L29/66742 ,  H01L21/02205 ,  H01L21/2686 ,  H01L21/28247 ,  H01L21/3086 ,  H01L27/1214 ,  H01L29/0847 ,  H01L29/401 ,  H01L29/42356 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/86

    Abstract: A thin film transistor array panel includes a substrate, a light blocking film disposed on the substrate, a buffer layer covering the light blocking film, and a channel region disposed on the buffer layer. A source region and a drain region are disposed in the same layer as the channel region. A gate insulating layer is disposed on the channel region, and a gate electrode overlaps the channel region, with the gate insulating layer interposed between the gate electrode and the channel region. A passivation layer is disposed on the gate electrode, the source region, the drain region, and the buffer layer. A source electrode and a drain electrode are disposed on the passivation layer, wherein the channel region, the source region, and the drain region comprise an oxide semiconductor, and wherein a carrier concentration of the source region and the drain region is larger than in the channel region.

    Abstract translation: 薄膜晶体管阵列面板包括衬底，设置在衬底上的遮光膜，覆盖遮光膜的缓冲层和设置在缓冲层上的沟道区。 源极区域和漏极区域设置在与沟道区域相同的层中。 栅极绝缘层设置在沟道区上，并且栅电极与沟道区重叠，栅极绝缘层介于栅电极和沟道区之间。 钝化层设置在栅电极，源极区，漏极区和缓冲层上。 源电极和漏极设置在钝化层上，其中沟道区，源区和漏区包括氧化物半导体，并且其中源极区和漏极区的载流子浓度大于 渠道区域。

    Display device
    4.
    发明授权
    Display device 有权

    公开(公告)号：US10768463B2

    公开(公告)日：2020-09-08

    申请号：US15814623

    申请日：2017-11-16

    Applicant: Samsung Display Co., Ltd.

    Inventor： Yun Jong Yeo ,  Seon Il Kim ,  Ji Hun Kim ,  Sung Won Cho ,  Sang Youn Han

    IPC: G02F1/1333 ,  G02F1/13357 ,  G02F1/1335 ,  G06F3/041 ,  G06F3/042

    Abstract: Provided herein may be a display device. The display device may include a first substrate including a first substrate having a plurality of pixel areas; a second substrate having a second base substrate facing the first substrate, first to third color filters provided on the second base substrate, the first to third color filters being respectively disposed on locations corresponding to respective pixel areas of the plurality of pixel areas and embodying different colors, and an infrared sensor disposed between the plurality of pixel areas in a plan view and configured to sense infrared light; a liquid crystal layer disposed between the first substrate and the second substrate; and a backlight unit configured to provide single-color light to the liquid crystal layer. At least one of the first to third color filters may include infrared quantum dot material which converts light provided from the backlight unit into infrared light.

    THIN FILM TRANSISTOR, THIN FILM TRANSISTOR ARRAY PANEL INCLUDING THE SAME, AND MANUFACTURING METHOD THEREOF
    9.
    发明申请
    THIN FILM TRANSISTOR, THIN FILM TRANSISTOR ARRAY PANEL INCLUDING THE SAME, AND MANUFACTURING METHOD THEREOF 审中-公开
    薄膜晶体管，薄膜晶体管阵列及其制造方法

    公开(公告)号：US20150333154A1

    公开(公告)日：2015-11-19

    申请号：US14808769

    申请日：2015-07-24

    Applicant: Samsung Display Co., Ltd.

    Inventor： Je Hun LEE ,  Jun Ho Song ,  Yun Jong Yeo ,  Hwa Dong Jung

    IPC: H01L29/66 ,  H01L29/40 ,  H01L27/12 ,  H01L21/268 ,  H01L21/308 ,  H01L21/02 ,  H01L29/786 ,  H01L21/28

    CPC classification number: H01L29/66742 ,  H01L21/02205 ,  H01L21/2686 ,  H01L21/28247 ,  H01L21/3086 ,  H01L27/1214 ,  H01L29/0847 ,  H01L29/401 ,  H01L29/42356 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/86

    Abstract: The present invention relates to a thin film transistor, a thin film transistor array panel, and a manufacturing method thereof. A thin film transistor according to an exemplary embodiments of the present invention includes: a gate electrode; a gate insulating layer positioned on or under the gate electrode; a channel region overlapping the gate electrode, the gate insulating layer interposed between the channel region and the gate electrode; and a source region and a drain region, facing each other with respect to the channel region, positioned in the same layer as the channel region, and connected to the channel region, wherein the channel region, the source region, and the drain region comprise an oxide semiconductor, and wherein a carrier concentration of the source region and the drain region is larger than a carrier concentration of the channel region.

    Abstract translation: 本发明涉及薄膜晶体管，薄膜晶体管阵列面板及其制造方法。 根据本发明的示例性实施例的薄膜晶体管包括：栅电极; 位于栅极电极上或下方的栅极绝缘层; 与所述栅电极重叠的沟道区，位于所述沟道区与所述栅电极之间的所述栅绝缘层; 以及源极区域和漏极区域，其相对于沟道区域彼此面对，位于与沟道区域相同的层中，并且连接到沟道区域，其中沟道区域，源极区域和漏极区域包括 氧化物半导体，其中源极区域和漏极区域的载流子浓度大于沟道区域的载流子浓度。

    Display device and manufacturing method thereof
    10.
    发明授权
    Display device and manufacturing method thereof 有权

    公开(公告)号：US11417636B2

    公开(公告)日：2022-08-16

    申请号：US17094630

    申请日：2020-11-10

    Applicant: Samsung Display Co., Ltd.

    Inventor： Su Bin Bae ,  Seon Il Kim ,  Sung Won Cho ,  Yun Jong Yeo ,  Yu Gwang Jeong

    IPC: H01L25/075 ,  H01L25/16 ,  H01L33/62

    Abstract: A display device includes a substrate and a display element layer on the substrate. The display element layer includes: first and second electrodes extending along a first direction and spaced apart from each other in a second direction; and light emitting elements electrically connected to the first and second electrodes. The first electrode has a first convex portion convex toward the second electrode and a first concave portion concave in a direction away from the second electrode, and the second electrode has a second convex portion convex toward the first electrode and a second concave portion concave in a direction away from the first electrode. The light emitting elements includes a first and second light emitting elements, respectively close to the first concave portion and the second concave portion based on an imaginary extension line extending in the first direction between the first electrode and the second electrode.

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