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公开(公告)号：US11901021B2
公开(公告)日：2024-02-13
申请号：US17530586
申请日：2021-11-19
发明人： Junyong Park , Hyunggon Kim , Byungsoo Kim , Sungmin Joe
IPC分类号： G11C16/04 , G11C16/34 , G11C16/24 , G11C16/08 , G11C11/56 , G06F3/06 , G11C16/10 , H10B43/27
CPC分类号： G11C16/3459 , G06F3/0604 , G06F3/0655 , G06F3/0679 , G11C11/5671 , G11C16/0483 , G11C16/08 , G11C16/10 , G11C16/24 , H10B43/27 , G11C2211/5621
摘要： A method for programming at least one memory cell of a plurality of memory cells included in a non-volatile memory device, the at least one memory cell including a word line and a bit line, the method including: performing a first and second program and verify operation based on a first and second condition, respectively, wherein each program and verify operation includes generating a program voltage and a bit line voltage by a voltage generator included in the non-volatile memory device and providing the program voltage and the bit line voltage to the word line and the bit line, respectively, wherein voltage levels and voltage application times of each program voltage and bit line voltage correspond to the first condition or the second condition, respectively, wherein the first condition is different from the second condition.
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公开(公告)号：US11901012B2
公开(公告)日：2024-02-13
申请号：US17510447
申请日：2021-10-26
发明人： Byungsoo Kim , Wandong Kim , Jaeyong Jeong
IPC分类号： G11C16/10 , G11C16/04 , G11C16/08 , G11C16/24 , G11C16/34 , G11C11/56 , H01L25/065 , H01L25/18 , H01L23/00
CPC分类号： G11C16/10 , G11C11/5628 , G11C11/5671 , G11C16/0483 , G11C16/08 , G11C16/24 , G11C16/3459 , H01L24/08 , H01L25/0657 , H01L25/18 , G11C2211/5621 , H01L2224/08145 , H01L2924/1431 , H01L2924/14511
摘要： A non-volatile memory device includes a memory cell array including memory cells respectively connected to bit lines; and a control logic unit configured to control a program operation with respect to the memory cells. The control logic unit is configured to perform a normal program verify operation with respect to the memory cells by using a normal program verify condition, during the program operation, and, based on a suspend command that is received during the program operation, perform an initial program verify operation with respect to the memory cells by using an initial program verify condition that is different from the normal program verify condition.
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公开(公告)号：US12131784B2
公开(公告)日：2024-10-29
申请号：US17742874
申请日：2022-05-12
发明人： Sangwon Park , Bongsoon Lim , Byungsoo Kim
摘要： A non-volatile memory device includes a plurality of word lines stacked above a substrate in a vertical direction; erase control lines that are spaced apart from each other in a first direction and extend in a second direction; a pass transistor circuit including a first pass transistor connected to a first group of erase control lines and a second pass transistor connected to a second group of erase control lines; and a memory cell array including a plurality of blocks. The first group of erase control lines are relatively close to a word line cut region and the second group of erase control lines are relatively far from the word line cut region. Each of the plurality of blocks includes a plurality of channel structures connected to the word lines and the erase control lines and each channel structure extends in the vertical direction.
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公开(公告)号：US20230123297A1
公开(公告)日：2023-04-20
申请号：US17863697
申请日：2022-07-13
发明人： Byungsoo Kim , Sangwan Nam , MinJae Seo , Bongsoon Lim
IPC分类号： H01L27/11575 , H01L27/11548 , H01L27/11556 , H01L27/11582
摘要： A memory device includes a first cell array region and a second cell array region separated by a separation region, each including at least one memory block having a plurality of gate electrode layers stacked in a first direction. The gate electrode layers include an upper select electrode layer including a plurality of string select lines, and a first electrode layer including a plurality of first word lines arranged below the string select lines. The first word lines include a first connection line to connect first end portions of the first word lines positioned on the opposite side of the separation region to each other and a plurality of second connection lines to connect some of second end portions of the plurality of first word lines adjacent to the separation region to each other, wherein each of the second connection lines is shorter than the first connection line.
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公开(公告)号：US20230096057A1
公开(公告)日：2023-03-30
申请号：US17817408
申请日：2022-08-04
发明人： Hanjun Lee , Byungsoo Kim , Sangwan Nam
摘要： A program method includes applying a first voltage to a plurality of bit lines, applying a second voltage to a common source line (CSL), and performing a program loop by applying a program voltage and a verify voltage to each of a plurality of ground selection lines (GSLs) positioned between one bit line among the plurality of bit lines and the CSL. The program loop is performed on both a program completed cell in which a program is completed by applying the program voltage and a program target cell.
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公开(公告)号：US20200350029A1
公开(公告)日：2020-11-05
申请号：US16686567
申请日：2019-11-18
发明人： Byungsoo Kim , Wandong Kim , Jaeyong Jeong
摘要： A non-volatile memory device includes a memory cell array including memory cells respectively connected to bit lines; and a control logic unit configured to control a program operation with respect to the memory cells. The control logic unit is configured to perform a normal program verify operation with respect to the memory cells by using a normal program verify condition, during the program operation, and, based on a suspend command that is received during the program operation, perform an initial program verify operation with respect to the memory cells by using an initial program verify condition that is different from the normal program verify condition.
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公开(公告)号：US20170269965A1
公开(公告)日：2017-09-21
申请号：US15461443
申请日：2017-03-16
发明人： Juho Son , Byungsoo Kim , Kyungmin Park
CPC分类号： G06F9/4881 , G06F9/4418 , G06F9/461 , G06F9/4831 , G06F9/542
摘要： An electronic device and a method for resuming a phased platform process in the electronic device includes switching a display that is included in the electronic device from an active state to a sleep state, detecting at least one event which internally occurs in the electronic device or is caused by an external device or a user in the case where the display is in the sleep state, executing a system process if the at least one event is detected, selecting one or more non-system processes related to one or more hardware or software components of the electronic device, respectively, on the basis of at least a part of the detected event, and executing the one or more selected non-system processes by activating the one or more hardware or software components of the electronic device that are related to the one or more selected non-system processes.
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公开(公告)号：US20220157393A1
公开(公告)日：2022-05-19
申请号：US17530586
申请日：2021-11-19
发明人： Junyong PARK , Hyunggon KIM , Byungsoo Kim , Sungmin JOE
IPC分类号： G11C16/34 , G11C16/04 , G11C16/24 , G11C16/08 , G11C11/56 , G11C16/10 , H01L27/11582 , G06F3/06
摘要： A method for programming at least one memory cell of a plurality of memory cells included in a non-volatile memory device, the at least one memory cell including a word line and a bit line, the method including: performing a first and second program and verify operation based on a first and second condition, respectively, wherein each program and verify operation includes generating a program voltage and a bit line voltage by a voltage generator included in the non-volatile memory device and providing the program voltage and the bit line voltage to the word line and the bit line, respectively, wherein voltage levels and voltage application times of each program voltage and bit line voltage correspond to the first condition or the second condition, respectively, wherein the first condition is different from the second condition.
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公开(公告)号：US11217241B2
公开(公告)日：2022-01-04
申请号：US16383968
申请日：2019-04-15
发明人： Hogon Kim , Jaeho Seo , Byungsoo Kim , Bumsu Shin , Jiyoung Lee
摘要： An electronic device and a computer program product are provided herein. The electronic device includes: an audio module, a communication module, a microphone, a memory storing programming instructions, and a processor, which executes the program product, causing the electronic device to receive a voice command from a user via the microphone, request, upon receiving the voice command, situation information from a first external electronic device based on device information and the voice command, and after receiving the situation information, transmit the situation information to a second external electronic device via the communication module, and receiving content corresponding to the situation information from the second external electronic device and reproducing the received content.
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公开(公告)号：US11164640B2
公开(公告)日：2021-11-02
申请号：US16942148
申请日：2020-07-29
发明人： Byungsoo Kim , Wandong Kim , Jaeyong Jeong
IPC分类号： G11C16/34 , G11C16/26 , G11C16/10 , G11C16/32 , G11C16/04 , G11C16/24 , G11C16/08 , G11C16/30
摘要： A non-volatile memory device includes a memory cell array including memory cells respectively connected to bit lines; and a control logic unit configured to control a program operation with respect to the memory cells. The control logic unit is configured to perform a normal program verify operation with respect to the memory cells by using a normal program verify condition, during the program operation, and, based on a suspend command that is received during the program operation, perform an initial program verify operation with respect to the memory cells by using an initial program verify condition that is different from the normal program verify condition.
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