公开(公告)号：US11762289B2

公开(公告)日：2023-09-19

申请号：US16155691

申请日：2018-10-09

Applicant: Samsung SDI Co., Ltd.

Inventor： Jinsuop Youn ,  Misun Kim ,  Hong Jeong Yu ,  Bumjin Lee ,  Yonghee Kang ,  Dongjun Kim ,  Byeonggeun Son ,  Jihyeon Yim ,  Mi Jeong Choi ,  Jonggi Kim ,  Minjee Park ,  Hojeong Paek ,  Woo Jung Shin ,  Young Woong Jang

IPC: G03F7/004 ,  C09K11/02 ,  C09K11/88 ,  G03F7/00 ,  G03F7/033 ,  G03F7/16 ,  G03F7/20 ,  G03F7/38 ,  G03F7/031 ,  G03F7/038 ,  G03F7/027 ,  G03F7/105 ,  C09D11/30 ,  B82Y35/00 ,  B82Y20/00 ,  B82Y30/00

CPC classification number: G03F7/0048 ,  C09D11/30 ,  C09K11/025 ,  C09K11/883 ,  G03F7/0007 ,  G03F7/0047 ,  G03F7/027 ,  G03F7/031 ,  G03F7/033 ,  G03F7/038 ,  G03F7/105 ,  G03F7/162 ,  G03F7/168 ,  G03F7/2002 ,  G03F7/38 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y35/00

Abstract: A photosensitive resin composition includes: (A) a binder resin; (B) a photopolymerizable monomer; (C) a photopolymerization initiator; (D) a quantum dot surface-modified with a compound having a thiol group at one terminal end and an alkoxy group, a cycloalkyl group, a carboxyl group, or a hydroxy group at the other terminal end; and (E) a solvent. A curable composition includes: (A′) a resin; (B′) a quantum dot surface-modified with a compound represented by Chemical Formula 1 or Chemical Formula 2; and (C′) a solvent. A method of manufacturing the surface-modified quantum dot, and a color filter manufactured using the photosensitive resin composition or the curable composition are also disclosed.

公开(公告)号：US10921709B2

公开(公告)日：2021-02-16

申请号：US16190739

申请日：2018-11-14

Applicant: Samsung SDI Co., Ltd.

Inventor： Hojeong Paek ,  Jonggi Kim ,  Minjee Park ,  Woo Jung Shin ,  Jinsuop Youn ,  Bumjin Lee ,  Jihyeon Yim ,  Young Woong Jang

IPC: G03F7/038 ,  G03F7/032 ,  G03F7/027 ,  G02B5/20 ,  G03F7/031 ,  G03F7/00 ,  G03F7/004

Abstract: A photosensitive resin composition for producing a photosensitive resin film is provided, along with the manufactured photosensitive resin film and a color filter including the photosensitive resin layer. The photosensitive resin composition includes: (A) a quantum dot; (B) a binder resin having a weight average molecular weight of about 2,000 g/mol to about 12,000 g/mol; (C) a photopolymerizable monomer; (D) a photopolymerization initiator; and (E) a solvent.

公开(公告)号：US09331044B2

公开(公告)日：2016-05-03

申请号：US14500064

申请日：2014-09-29

Applicant: SAMSUNG SDI CO., LTD.

Inventor： Young Ju Shin ,  Kyoung Ku Kang ,  Ji Yeon Kim ,  Kyoung Soo Park ,  Woo Jung Shin ,  Kwang Jin Jung ,  Ja Young Hwang

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/00 ,  H05K3/32

CPC classification number: H01L24/29 ,  H01L24/27 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/27003 ,  H01L2224/271 ,  H01L2224/2712 ,  H01L2224/29005 ,  H01L2224/29083 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/29387 ,  H01L2224/2939 ,  H01L2224/29393 ,  H01L2224/29439 ,  H01L2224/29444 ,  H01L2224/29455 ,  H01L2224/32145 ,  H01L2224/32227 ,  H01L2224/83203 ,  H01L2224/83851 ,  H01L2924/0665 ,  H01L2924/15788 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/2064 ,  H01L2924/20641 ,  H01L2924/30101 ,  H05K3/323 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/05442 ,  H01L2924/05432 ,  H01L2924/05341 ,  H01L2924/0542 ,  H01L2924/0103 ,  H01L2924/0532 ,  H01L2924/01012 ,  H01L2924/05342 ,  H01L2924/0544 ,  H01L2924/01082 ,  H01L2924/053 ,  H01L2924/01083 ,  H01L2924/0536 ,  H01L2924/01042 ,  H01L2924/0535 ,  H01L2924/01023 ,  H01L2924/01041 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/0543 ,  H01L2924/01049 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/01006

Abstract: A semiconductor device connected by an anisotropic conductive film including a first insulation layer, a conductive layer, and a second insulation layer one above another, wherein the conductive layer has an expansion length of 20% or less in a width direction thereof, and the second insulation layer has an expansion length of 50% or more in a width direction thereof, the expansion length is calculated according to Equation 1, below, after glass substrates are placed on upper and lower sides of the anisotropic conductive film respectively, followed by compression at 110° C. to 200° C. for 3 to 7 seconds under a load of 1 MPa to 7 MPa per unit area of a sample, Increased ratio of expansion length (%)=[(length of corresponding layer in width direction after compression−length of corresponding layer in width direction before compression)/length of corresponding layer in width direction before compression]×100.  [Equation 1]

Abstract translation: 一种通过各向异性导电膜连接的半导体器件，其中，所述各向异性导电膜包括第一绝缘层，导电层和第二绝缘层，所述导电层的宽度方向上的扩展长度为20％以下， 绝缘层的宽度方向的膨胀长度为50％以上，根据下面的等式1计算出玻璃基板分别在各向异性导电膜的上侧和下侧之后的膨胀长度，然后压缩 在每单位面积样品1MPa〜7MPa的负荷下，在110℃〜200℃下进行3〜7秒的膨胀长度比（％）= [[（压缩后的宽度方向的相应层的长度 压缩前宽度方向上相应层的长度）/压缩前相应层宽度方向的长度×100。 [等式1]