公开(公告)号：US20170173718A1

公开(公告)日：2017-06-22

申请号：US14977639

申请日：2015-12-22

申请人： Industrial Technology Research Institute

发明人： Yi-Hao Huang ,  Min-Chieh Chou ,  Wen-Hua Zhang ,  Meng-Chi Huang

IPC分类号： B23K1/00 ,  C25D3/46 ,  H01L23/00 ,  C25D5/10 ,  C23C28/00 ,  C25D3/48 ,  C25D3/56

CPC分类号： B23K1/0016 ,  B23K20/002 ,  B23K20/026 ,  B23K20/233 ,  B23K2101/36 ,  B23K2103/12 ,  C23C28/321 ,  C25D3/46 ,  C25D3/48 ,  C25D3/56 ,  C25D5/10 ,  C25D5/48 ,  C25D5/505 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/2712 ,  H01L2224/2908 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29155 ,  H01L2224/29166 ,  H01L2224/29172 ,  H01L2224/29186 ,  H01L2224/3201 ,  H01L2224/32245 ,  H01L2224/32503 ,  H01L2224/32507 ,  H01L2224/83101 ,  H01L2224/8321 ,  H01L2224/83447 ,  H01L2224/8381 ,  H01L2224/8382 ,  H01L2224/83825 ,  H01L2224/83907 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/15747 ,  H01L2924/20105 ,  H01L2924/01015 ,  H01L2924/00014 ,  H01L2924/01049 ,  H01L2924/01322 ,  H01L2924/00012 ,  H01L2924/0103 ,  H01L2924/01017

摘要： A metal patch suitable for connecting a high-power element and a substrate is provided. The metal patch includes an intermediate metal layer, two first metal layers, and two second metal layers. The first metal layers are respectively disposed on two opposite surfaces of the intermediate metal layer. The intermediate metal layer is located between the first metal layers. The melting point of each of the first metal layers is greater than 800° C. The second metal layers are respectively disposed on the first metal layers. The intermediate metal layer and the first metal layers are located between the second metal layers. The material of each of the second metal layers includes an indium-tin alloy. Each of the first metal layers and the corresponding second metal layer can generate an intermetal via a solid-liquid diffusion reaction.

公开(公告)号：US09960139B2

公开(公告)日：2018-05-01

申请号：US14428582

申请日：2013-09-17

申请人： DEXERIALS CORPORATION

发明人： Kouichi Sato ,  Yasushi Akutsu

IPC分类号： H01L23/00 ,  B29C71/04 ,  G02F1/1345 ,  B23B3/30 ,  C09J9/02 ,  B29C59/02 ,  B32B33/00 ,  C09J7/00 ,  B32B3/30 ,  B32B7/12 ,  B32B27/08 ,  B32B27/20 ,  B32B27/30 ,  B32B27/36 ,  B32B27/38 ,  B32B3/08 ,  C08K3/08 ,  B29K63/00 ,  B29L9/00 ,  B29L31/34 ,  B29C35/08

CPC分类号： H01L24/28 ,  B29C59/02 ,  B29C71/04 ,  B29C2035/0827 ,  B29C2059/028 ,  B29K2063/00 ,  B29L2009/003 ,  B29L2031/34 ,  B32B3/08 ,  B32B3/30 ,  B32B7/12 ,  B32B27/08 ,  B32B27/20 ,  B32B27/308 ,  B32B27/36 ,  B32B27/38 ,  B32B33/00 ,  B32B2255/205 ,  B32B2264/102 ,  B32B2264/104 ,  B32B2270/00 ,  B32B2307/202 ,  B32B2307/412 ,  B32B2307/706 ,  B32B2457/00 ,  B32B2457/202 ,  C08K3/08 ,  C08K2201/001 ,  C09J7/00 ,  C09J7/10 ,  C09J9/02 ,  C09J2201/36 ,  C09J2201/602 ,  C09J2203/326 ,  C09J2205/102 ,  G02F1/13452 ,  G02F1/13454 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/75 ,  H01L24/81 ,  H01L24/83 ,  H01L2224/13144 ,  H01L2224/16227 ,  H01L2224/27003 ,  H01L2224/271 ,  H01L2224/2711 ,  H01L2224/2712 ,  H01L2224/27334 ,  H01L2224/29076 ,  H01L2224/2908 ,  H01L2224/29083 ,  H01L2224/2919 ,  H01L2224/29195 ,  H01L2224/2929 ,  H01L2224/29311 ,  H01L2224/29316 ,  H01L2224/29324 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/29357 ,  H01L2224/2936 ,  H01L2224/29371 ,  H01L2224/29387 ,  H01L2224/29388 ,  H01L2224/2939 ,  H01L2224/29391 ,  H01L2224/29393 ,  H01L2224/29394 ,  H01L2224/29395 ,  H01L2224/294 ,  H01L2224/29486 ,  H01L2224/29494 ,  H01L2224/29499 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/75301 ,  H01L2224/81488 ,  H01L2224/81903 ,  H01L2224/83192 ,  H01L2224/83203 ,  H01L2224/83488 ,  H01L2224/83851 ,  H01L2224/83856 ,  H01L2224/83862 ,  H01L2224/83871 ,  H01L2224/83874 ,  H01L2224/83885 ,  H01L2224/83907 ,  H01L2924/01006 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/0543 ,  H01L2924/0544 ,  H01L2924/0549 ,  H01L2924/07802 ,  H01L2924/07811 ,  H01L2924/351 ,  H01L2924/3511 ,  H01L2924/381 ,  Y10T156/1039 ,  Y10T428/24562 ,  H01L2924/00012 ,  H01L2924/0665 ,  H01L2924/0635 ,  H01L2924/069 ,  H01L2924/07025 ,  H01L2924/066 ,  H01L2924/06 ,  H01L2924/00014 ,  H01L2924/0615

摘要： To reduce substrate warp occurring after connection an anisotropic conductive film is used. An anisotropic conductive film has: a first insulating adhesive layer; a second insulating adhesive layer; and a conductive particle-containing layer sandwiched by the first insulating adhesive layer and the second insulating adhesive layer and having conductive particles contained in an insulating adhesive, wherein air bubbles are contained between the conductive particle-containing layer and the first insulating adhesive layer, and, the conductive particle-containing layer, a portion thereof below the conductive particles and in contact with the second insulating adhesive layer has a lower degree of cure than other portions thereof.

公开(公告)号：US09847311B2

公开(公告)日：2017-12-19

申请号：US14930816

申请日：2015-11-03

申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA

发明人： Takuya Kadoguchi

IPC分类号： H01L23/48 ,  H01L23/00 ,  H01L23/495 ,  H01L23/31 ,  H01L23/051

CPC分类号： H01L24/27 ,  H01L23/051 ,  H01L23/3107 ,  H01L23/49537 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/49582 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/83 ,  H01L2224/2711 ,  H01L2224/2712 ,  H01L2224/27848 ,  H01L2224/291 ,  H01L2224/29111 ,  H01L2224/32245 ,  H01L2224/32503 ,  H01L2224/32507 ,  H01L2224/3303 ,  H01L2224/33181 ,  H01L2224/33505 ,  H01L2224/33517 ,  H01L2224/73215 ,  H01L2224/83455 ,  H01L2224/8381 ,  H01L2224/83815 ,  H01L2924/014 ,  H01L2924/00014

摘要： A semiconductor device includes first and second semiconductor elements and first and second conductive members. A first electrode on the first semiconductor element is bonded to a first stack part of the first conductive member by a first bonding layer. A second electrode on the second semiconductor element is bonded to a second stack part of the second conductive member by a second bonding layer. A first joint part of the first conductive member is bonded to a second joint part of the second conductive member by an intermediate bonding layer. A first surface of the first joint part facing the second joint part, a side surface of the first joint part continuous from the first surface, a second surface of the second joint part facing the first joint part, and a side surface of the second joint part continuous from the second surface are covered by nickel layers.

公开(公告)号：US09018664B2

公开(公告)日：2015-04-28

申请号：US14144111

申请日：2013-12-30

申请人： Nichia Corporation

发明人： Masafumi Kuramoto ,  Satoru Ogawa ,  Miki Niwa

IPC分类号： H01L33/62 ,  H01L33/44 ,  H01L23/00 ,  H01L23/08 ,  H01L23/29 ,  H01L23/495 ,  H01S5/022

CPC分类号： H01L33/44 ,  H01L23/08 ,  H01L23/293 ,  H01L23/49579 ,  H01L23/49582 ,  H01L24/17 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/83 ,  H01L33/62 ,  H01L2224/05568 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/2712 ,  H01L2224/2745 ,  H01L2224/275 ,  H01L2224/29023 ,  H01L2224/2908 ,  H01L2224/29083 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29187 ,  H01L2224/2919 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/73265 ,  H01L2224/83048 ,  H01L2224/83055 ,  H01L2224/83075 ,  H01L2224/83201 ,  H01L2224/83203 ,  H01L2224/83205 ,  H01L2224/83207 ,  H01L2224/83439 ,  H01L2224/83487 ,  H01L2224/8383 ,  H01L2224/8384 ,  H01L2224/83894 ,  H01L2224/83895 ,  H01L2224/83896 ,  H01L2224/83907 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01063 ,  H01L2924/01064 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01105 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/0541 ,  H01L2924/0665 ,  H01L2924/09701 ,  H01L2924/12035 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/1579 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/201 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/3025 ,  H01L2933/0066 ,  H01S5/0226 ,  H01L2924/00015 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/48 ,  H01L2224/05599

摘要： An object of the invention is to provide a method for producing a conductive member having low electrical resistance, and the conductive member is obtained using a low-cost stable conductive material composition that does not contain an adhesive. A method for producing a semiconductor device in which silver or silver oxide provided on a surface of a base and silver or silver oxide provided on a surface of a semiconductor element are bonded, includes the steps of arranging a semiconductor element on a base such that silver or silver oxide provided on a surface of the semiconductor element is in contact with silver or silver oxide provided on a surface of the base, temporarily bonding the semiconductor element and the base by applying a pressure or an ultrasonic vibration to the semiconductor element or the base, and permanently bonding the semiconductor element and the base by applying heat having a temperature of 150 to 900° C. to the semiconductor device and the base.

摘要翻译： 本发明的目的是提供一种用于制造具有低电阻的导电构件的方法，并且使用不含粘合剂的低成本稳定的导电材料组合物获得导电构件。 一种制造半导体器件的方法，其中设置在基底表面上的银或氧化银和设置在半导体元件的表面上的银或银氧化物结合，包括以下步骤：将半导体元件布置在基底上，使得银 或设置在半导体元件的表面上的氧化银与设置在基板的表面上的银或氧化银接触，通过向半导体元件或基底施加压力或超声波振动来临时接合半导体元件和基座 并且通过向半导体器件和基底施加温度为150至900℃的热而将半导体元件和基底永久地接合。

公开(公告)号：US09536851B2

公开(公告)日：2017-01-03

申请号：US14477962

申请日：2014-09-05

申请人： Infineon Technologies AG

发明人： Friedrich Kroener

IPC分类号： B23K35/14 ,  H01L23/00 ,  B23K35/02 ,  B23K1/00 ,  B23K35/30 ,  B23K35/32

CPC分类号： H01L24/29 ,  B23K1/0016 ,  B23K35/0233 ,  B23K35/0238 ,  B23K35/0244 ,  B23K35/302 ,  B23K35/32 ,  B23K35/36 ,  B23K2101/40 ,  B23K2103/172 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/27 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/03462 ,  H01L2224/04026 ,  H01L2224/05647 ,  H01L2224/05747 ,  H01L2224/05893 ,  H01L2224/06181 ,  H01L2224/271 ,  H01L2224/2711 ,  H01L2224/2712 ,  H01L2224/27442 ,  H01L2224/2746 ,  H01L2224/276 ,  H01L2224/2908 ,  H01L2224/29082 ,  H01L2224/29083 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29157 ,  H01L2224/29193 ,  H01L2224/29247 ,  H01L2224/29271 ,  H01L2224/29393 ,  H01L2224/29447 ,  H01L2224/29471 ,  H01L2224/32013 ,  H01L2224/32014 ,  H01L2224/32057 ,  H01L2224/32058 ,  H01L2224/32245 ,  H01L2224/831 ,  H01L2224/83101 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83447 ,  H01L2224/83693 ,  H01L2224/8382 ,  H01L2224/83825 ,  H01L2924/0105 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/2064 ,  H01L2924/20641 ,  H01L2924/20642 ,  H01L2924/20643 ,  H01L2924/20644 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/00012

摘要： A preform structure for soldering a semiconductor chip arrangement includes a carbon fiber composite sheet and a solder layer formed over the carbon fiber composite sheet.

摘要翻译： 用于焊接半导体芯片布置的预成型件结构包括碳纤维复合片和形成在碳纤维复合片上的焊料层。

公开(公告)号：US20140110740A1

公开(公告)日：2014-04-24

申请号：US14144111

申请日：2013-12-30

申请人： Nichia Corporation

发明人： Masafumi KURAMOTO ,  Satoru OGAWA ,  Miki NIWA

IPC分类号： H01L33/62 ,  H01L33/44

CPC分类号： H01L33/44 ,  H01L23/08 ,  H01L23/293 ,  H01L23/49579 ,  H01L23/49582 ,  H01L24/17 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/83 ,  H01L33/62 ,  H01L2224/05568 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/2712 ,  H01L2224/2745 ,  H01L2224/275 ,  H01L2224/29023 ,  H01L2224/2908 ,  H01L2224/29083 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29187 ,  H01L2224/2919 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/73265 ,  H01L2224/83048 ,  H01L2224/83055 ,  H01L2224/83075 ,  H01L2224/83201 ,  H01L2224/83203 ,  H01L2224/83205 ,  H01L2224/83207 ,  H01L2224/83439 ,  H01L2224/83487 ,  H01L2224/8383 ,  H01L2224/8384 ,  H01L2224/83894 ,  H01L2224/83895 ,  H01L2224/83896 ,  H01L2224/83907 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01063 ,  H01L2924/01064 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01105 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/0541 ,  H01L2924/0665 ,  H01L2924/09701 ,  H01L2924/12035 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/1579 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/201 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/3025 ,  H01L2933/0066 ,  H01S5/0226 ,  H01L2924/00015 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/48 ,  H01L2224/05599

摘要： An object of the invention is to provide a method for producing a conductive member having low electrical resistance, and the conductive member is obtained using a low-cost stable conductive material composition that does not contain an adhesive. A method for producing a semiconductor device in which silver or silver oxide provided on a surface of a base and silver or silver oxide provided on a surface of a semiconductor element are bonded, includes the steps of arranging a semiconductor element on a base such that silver or silver oxide provided on a surface of the semiconductor element is in contact with silver or silver oxide provided on a surface of the base, temporarily bonding the semiconductor element and the base by applying a pressure or an ultrasonic vibration to the semiconductor element or the base, and permanently bonding the semiconductor element and the base by applying heat having a temperature of 150 to 900° C. to the semiconductor device and the base.

摘要翻译： 本发明的目的是提供一种用于制造具有低电阻的导电构件的方法，并且使用不含粘合剂的低成本稳定的导电材料组合物获得导电构件。 一种制造半导体器件的方法，其中设置在基底表面上的银或氧化银和设置在半导体元件的表面上的银或银氧化物结合，包括以下步骤：将半导体元件布置在基底上，使得银 或设置在半导体元件的表面上的氧化银与设置在基板的表面上的银或氧化银接触，通过向半导体元件或基底施加压力或超声波振动来临时接合半导体元件和基座 并且通过向半导体器件和基底施加温度为150至900℃的热而将半导体元件和基底永久地接合。

公开(公告)号：US08642392B2

公开(公告)日：2014-02-04

申请号：US12691947

申请日：2010-01-22

申请人： Masafumi Kuramoto ,  Satoru Ogawa ,  Miki Niwa

发明人： Masafumi Kuramoto ,  Satoru Ogawa ,  Miki Niwa

IPC分类号： H01L21/44

CPC分类号： H01L33/44 ,  H01L23/08 ,  H01L23/293 ,  H01L23/49579 ,  H01L23/49582 ,  H01L24/17 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/83 ,  H01L33/62 ,  H01L2224/05568 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/2712 ,  H01L2224/2745 ,  H01L2224/275 ,  H01L2224/29023 ,  H01L2224/2908 ,  H01L2224/29083 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29187 ,  H01L2224/2919 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/73265 ,  H01L2224/83048 ,  H01L2224/83055 ,  H01L2224/83075 ,  H01L2224/83201 ,  H01L2224/83203 ,  H01L2224/83205 ,  H01L2224/83207 ,  H01L2224/83439 ,  H01L2224/83487 ,  H01L2224/8383 ,  H01L2224/8384 ,  H01L2224/83894 ,  H01L2224/83895 ,  H01L2224/83896 ,  H01L2224/83907 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01063 ,  H01L2924/01064 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01105 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/0541 ,  H01L2924/0665 ,  H01L2924/09701 ,  H01L2924/12035 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/1579 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/201 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/3025 ,  H01L2933/0066 ,  H01S5/0226 ,  H01L2924/00015 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/48 ,  H01L2224/05599

摘要： An object of the invention is to provide a method for producing a conductive member having low electrical resistance, and the conductive member is obtained using a low-cost stable conductive material composition that does not contain an adhesive. A method for producing a semiconductor device in which silver or silver oxide provided on a surface of a base and silver or silver oxide provided on a surface of a semiconductor element are bonded, includes the steps of arranging a semiconductor element on a base such that silver or silver oxide provided on a surface of the semiconductor element is in contact with silver or silver oxide provided on a surface of the base, temporarily bonding the semiconductor element and the base by applying a pressure or an ultrasonic vibration to the semiconductor element or the base, and permanently bonding the semiconductor element and the base by applying heat having a temperature of 150 to 900° C. to the semiconductor device and the base.

摘要翻译： 本发明的目的是提供一种用于制造具有低电阻的导电构件的方法，并且使用不含粘合剂的低成本稳定的导电材料组合物获得导电构件。 一种制造半导体器件的方法，其中设置在基底表面上的银或氧化银和设置在半导体元件的表面上的银或银氧化物结合，包括以下步骤：将半导体元件布置在基底上，使得银 或设置在半导体元件的表面上的氧化银与设置在基板的表面上的银或氧化银接触，通过向半导体元件或基底施加压力或超声波振动来临时接合半导体元件和基座 并且通过向半导体器件和基底施加温度为150至900℃的热而将半导体元件和基底永久地接合。

公开(公告)号：US11677060B2

公开(公告)日：2023-06-13

申请号：US17228310

申请日：2021-04-12

申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

发明人： Jiho Joo ,  Yong Sung Eom ,  Gwang-Mun Choi ,  Kwang-Seong Choi ,  Chanmi Lee ,  Ki Seok Jang

IPC分类号： H01L33/62 ,  H01L23/00 ,  H01L33/56 ,  H01L25/075

CPC分类号： H01L33/62 ,  H01L24/27 ,  H01L24/81 ,  H01L24/83 ,  H01L33/56 ,  H01L25/0753 ,  H01L2224/2712 ,  H01L2224/2919 ,  H01L2224/8112 ,  H01L2224/8122 ,  H01L2224/83909 ,  H01L2924/0715 ,  H01L2924/12041 ,  H01L2933/005 ,  H01L2933/0066

摘要： Provided is a method for transferring and bonding devices. The method includes applying an adhesive layer to a carrier, arranging a plurality of devices, attaching the arranged devices to the carrier, applying a polymer film to a substrate, aligning the carrier to which the plurality of devices are attached with the substrate, bonding the plurality of devices to the substrate by radiating laser, and releasing the carrier from the substrate to which the plurality of devices are bonded.

公开(公告)号：US20170232562A1

公开(公告)日：2017-08-17

申请号：US15503093

申请日：2015-07-14

申请人： KABUSHIKI KAISHA TOYOTA JIDOSHOKKI

发明人： Kazuhiro MAENO

IPC分类号： B23K35/26 ,  H01L23/00 ,  B23K35/30 ,  B23K1/20 ,  B23K35/02

CPC分类号： B23K35/262 ,  B23K1/012 ,  B23K1/20 ,  B23K35/0238 ,  B23K35/26 ,  B23K35/30 ,  B23K35/302 ,  B23K2101/40 ,  H01L23/4827 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/04026 ,  H01L2224/05082 ,  H01L2224/05166 ,  H01L2224/05173 ,  H01L2224/05655 ,  H01L2224/2712 ,  H01L2224/29083 ,  H01L2224/29111 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/32503 ,  H01L2224/32507 ,  H01L2224/83055 ,  H01L2224/83065 ,  H01L2224/83101 ,  H01L2224/83192 ,  H01L2224/8321 ,  H01L2224/83424 ,  H01L2224/83447 ,  H01L2224/83455 ,  H01L2224/8381 ,  H01L2224/83815 ,  H01L2224/83825 ,  H01L2924/01327 ,  H01L2924/351 ,  H05K3/341 ,  H01L2924/00014 ,  H01L2224/05644 ,  H01L2224/05155 ,  H01L2924/01028

摘要： A bonding structure bonds a Cu wiring line and a device electrode with each other. The bonding structure is arranged between the Cu wiring line and the device electrode, and comprises a first intermetallic compound (IMC) layer (a layer of an intermetallic compound of Cu and Sn) formed on the interface with the Cu wiring line, a second intermetallic compound (IMC) layer (a layer of an intermetallic compound of Cu and Sn) formed on the interface with the device electrode, and an intermediate layer that is present between the intermetallic compound layers. In the intermediate layer, a network-like IMC (a network-like intermetallic compound of Cu and Sn) is present in Sn.

公开(公告)号：US20170084567A1

公开(公告)日：2017-03-23

申请号：US15363947

申请日：2016-11-29

申请人： Infineon Technologies AG

发明人： Friedrich Kroener

IPC分类号： H01L23/00 ,  B23K35/02 ,  B23K35/36 ,  B23K1/00

CPC分类号： H01L24/29 ,  B23K1/0016 ,  B23K35/007 ,  B23K35/0233 ,  B23K35/0238 ,  B23K35/0244 ,  B23K35/3006 ,  B23K35/3013 ,  B23K35/302 ,  B23K35/32 ,  B23K35/36 ,  B23K2101/40 ,  B23K2103/172 ,  B32B15/14 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/27 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/03462 ,  H01L2224/04026 ,  H01L2224/05647 ,  H01L2224/05747 ,  H01L2224/05893 ,  H01L2224/06181 ,  H01L2224/271 ,  H01L2224/2711 ,  H01L2224/2712 ,  H01L2224/27442 ,  H01L2224/2746 ,  H01L2224/276 ,  H01L2224/2908 ,  H01L2224/29082 ,  H01L2224/29083 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29157 ,  H01L2224/29193 ,  H01L2224/29247 ,  H01L2224/29271 ,  H01L2224/29393 ,  H01L2224/29447 ,  H01L2224/29471 ,  H01L2224/32013 ,  H01L2224/32014 ,  H01L2224/32057 ,  H01L2224/32058 ,  H01L2224/32245 ,  H01L2224/831 ,  H01L2224/83101 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83447 ,  H01L2224/83693 ,  H01L2224/8382 ,  H01L2224/83825 ,  H01L2924/0105 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/2064 ,  H01L2924/20641 ,  H01L2924/20642 ,  H01L2924/20643 ,  H01L2924/20644 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/00012

摘要： A preform structure for soldering a semiconductor chip arrangement includes a carbon fiber composite sheet and a solder layer formed over the carbon fiber composite sheet.