Abstract:
A semiconductor package and method of manufacturing thereof are provided. The package includes: a substrate; a first metal wire on a top surface of the substrate; a first semiconductor chip disposed on the substrate; a first insulation layer which covers the first semiconductor chip and at least a part of the substrate; a second metal wire formed on a top surface of the first insulation layer; a first via formed in the first insulation layer, wherein the first via electrically connects the second metal wire and the first metal wire; and a second semiconductor chip disposed on the second metal wire, wherein the second semiconductor chip is electrically connected to the second metal wire.
Abstract:
A method for providing a data service and a system for providing a data service applying the same are provided. The method includes selecting a content that is assigned a data assignment quantity indicating a quantity sufficient for using a service; comparing a data generation quantity indicating a quantity of data generated by a user and the data assignment quantity; and performing the service for the data generated by the user according to a result of the comparison.
Abstract:
A computer system and a control method thereof, the computer system including: a processor which executes a program; a communication unit which communicates with an external device; a main body which is provided with the processor. A cover which can be opened and shut with regard to the main body; an open/shut sensor which senses whether the cover is open or shut; and a controller which interrupts an operation of the communication unit if the open/shut sensor senses that the cover is shut.
Abstract:
A method of interconnecting semiconductor devices by using capillary motion, thereby simplifying fabricating operations, reducing fabricating costs, and simultaneously filling of through-silicon-vias (TSVs) and interconnecting semiconductor devices. The method includes preparing a first semiconductor device in which first TSVs are formed, positioning solder balls respectively on the first TSVs, performing a back-lap operation on the first semiconductor device, positioning a second semiconductor device, in which second TSVs are formed, above the first semiconductor device on which the solder balls are positioned, and performing a reflow operation such that the solder balls fill the first and second TSVs due to capillary motion.