FEED
    1.
    发明申请
    FEED 审中-公开
    饲料

    公开(公告)号:US20110212219A1

    公开(公告)日:2011-09-01

    申请号:US12996281

    申请日:2009-02-17

    IPC分类号: A23K1/18 A23L1/20

    摘要: Provided is a feed by which energy use efficiency of rapeseed meal that has been commonly employed as a feed can be increased and the amount of excreta occurring in using rapeseed meal can be reduced or regulated. A livestock feed having an improved nutritive value which comprises 0.1 to 30% of rapeseed meal containing 41% or more of protein and 8% or less of crude fiber. A feed for regulating livestock excreta which comprises 0.1 to 30% of rapeseed meal containing 41% or more of protein and 8% or less of crude fiber.

    摘要翻译: 本发明提供了可以增加通常用作饲料的菜籽粉的能量利用效率的饲料,并且可以减少或调节在使用菜籽粉中发生的排泄物的量。 具有改善的营养价值的家畜饲料,其包含0.1至30%的含有41%或更多蛋白质和8%或更少粗纤维的菜籽粕。 用于调节家畜排泄物的饲料,其包含0.1至30%的含有41%或更多蛋白质和8%或更少粗纤维的菜籽粉。

    Self-pulsation type semiconductor laser device
    3.
    发明授权
    Self-pulsation type semiconductor laser device 失效
    自脉冲型半导体激光器件

    公开(公告)号:US6002701A

    公开(公告)日:1999-12-14

    申请号:US771150

    申请日:1996-12-20

    摘要: A self-pulsation type semiconductor laser device includes a semiconductor substrate of a first conductive type and a multilayered structure including at least an active layer provided on the semi conductor substrate. The multilayered structure includes a first cladding layer of the first conductive type provided below the active layer, a second cladding layer of a second conductive type having a striped ridge portion provided above the active layer and a saturable absorbing film provided over the second cladding layer. The saturable absorbing film includes an accumulation region for accumulating photoexcited carriers. The accumulating region is provided apart from a surface of the second cladding layer.

    摘要翻译: 自脉动型半导体激光器件包括第一导电类型的半导体衬底和至少包括设置在半导体衬底上的有源层的多层结构。 多层结构包括设置在有源层下方的第一导电类型的第一包层,具有设置在有源层上方的条纹脊部的第二导电类型的第二包层和设置在第二包层上的可饱和吸收膜。 可饱和吸收膜包括用于积聚光激发载流子的积聚区域。 蓄积区域与第二包覆层的表面分开设置。

    Vehicle lamp controller
    4.
    发明授权
    Vehicle lamp controller 有权
    车灯控制器

    公开(公告)号:US08866388B2

    公开(公告)日:2014-10-21

    申请号:US13534646

    申请日:2012-06-27

    摘要: A vehicle lamp controller includes a lamp control unit that performs lamp control, in which light amount or light distribution of each of a plurality of lamps to be provided on a vehicle that runs on electric power from a battery, is controlled, according to a priority that is assigned to each of the plurality of lamps, wherein the priorities are determined based on degrees of necessity of the plurality of lamps in securing safety for the vehicle. The vehicle lamp controller may further include a remaining battery charge detecting device for detecting a remaining charge of a battery, and the lamp control unit may be configured to perform the lamp control according to the priorities when the remaining charge becomes lower than a predetermined threshold.

    摘要翻译: 车辆灯控制器包括灯控制单元,其执行灯控制,其中根据优先级来控制要设置在来自电池的电力上运行的车辆上的多个灯中的每一个的光量或光分布 其被分配给多个灯中的每一个,其中基于确保车辆的安全性的多个灯的必要性来确定优先级。 车辆灯控制器还可以包括用于检测电池的剩余电量的剩余电池电量检测装置,并且灯控制单元可以被配置为当剩余电荷低于预定阈值时根据优先级执行灯控制。

    Nitride semiconductor laser chip and method of fabrication thereof
    7.
    发明申请
    Nitride semiconductor laser chip and method of fabrication thereof 有权
    氮化物半导体激光芯片及其制造方法

    公开(公告)号:US20110317733A1

    公开(公告)日:2011-12-29

    申请号:US13067747

    申请日:2011-06-23

    IPC分类号: H01S5/22 H01L33/32 H01S5/323

    摘要: A nitride semiconductor laser chip that operates with reduced electric power consumption and helps achieve cost reduction has: an active layer formed of a nitride semiconductor; a nitride semiconductor layer formed above the active layer; a ridge portion formed in a part of the nitride semiconductor layer; and an electrically conductive film having a light-absorbing property and formed at least in a region outside the ridge portion above the nitride semiconductor layer. The ridge portion has a ridge width of 2 μm or more but 6 μm or less.

    摘要翻译: 以降低的电力消耗并且有助于实现成本降低的氮化物半导体激光器芯片具有:由氮化物半导体形成的有源层; 形成在所述有源层上方的氮化物半导体层; 形成在所述氮化物半导体层的一部分中的脊部; 以及至少形成在氮化物半导体层上方的脊部外侧的区域中具有光吸收性的导电膜。 脊部的脊宽度为2μm以上且6μm以下。

    Nitride semiconductor laser chip and method of fabricating same
    8.
    发明申请
    Nitride semiconductor laser chip and method of fabricating same 审中-公开
    氮化物半导体激光芯片及其制造方法

    公开(公告)号:US20090168827A1

    公开(公告)日:2009-07-02

    申请号:US12318237

    申请日:2008-12-23

    IPC分类号: H01S5/00 H01L21/02

    摘要: A nitride semiconductor laser chip is provided that can not only improve its COD level but also prevent its I-L characteristic curve from rising steeply and that can reduce an operating voltage. The nitride semiconductor laser chip includes layers constituting a nitride semiconductor layer and formed on an n-type GaN substrate, mirror facets including a light emission mirror facet and a light reflection mirror facet, a p-side ohmic contact formed on an upper contact layer to reach the mirror facets and a p-side pad contact formed in a region only a distance L1 away from the light emission mirror facet. The thickness d of the p-side ohmic contact and the distance L1 from the p-side ohmic contact to the light emission mirror facet are adjusted such that the amount of current injected into the light emission mirror facet is 20% or more but 70% or less of the amount of current injected into an area directly below the p-side pad contact.

    摘要翻译: 提供了一种氮化物半导体激光器芯片,其不仅可以提高其COD水平,而且可以防止其I-L特性曲线急剧上升,并且可以降低工作电压。 氮化物半导体激光器芯片包括构成氮化物半导体层并形成在n型GaN衬底上的层,包括发光镜面和光反射镜面的镜面,形成在上接触层上的p侧欧姆接触到 到达镜面和在远离发光镜面的距离L1的区域中形成的p侧焊盘触点。 调整p侧欧姆接触的厚度d和从p侧欧姆接触到发光镜面的距离L1,使得注入发光镜面的电流量为20%以上且70% 或更少的注入到p侧焊盘触点正下方的区域的电流量。

    Axial flow turbine
    9.
    发明授权
    Axial flow turbine 有权
    轴流式涡轮机

    公开(公告)号:US07300247B2

    公开(公告)日:2007-11-27

    申请号:US11392956

    申请日:2006-03-30

    IPC分类号: F01D9/02

    CPC分类号: F01D5/145 F01D9/02

    摘要: An axial flow turbine provided with a stage composed of a turbine nozzle and a turbine rotor blade arranged in an axial flow direction. Both end portions of a nozzle blade of the turbine nozzle are supported by a diaphragm inner ring and a diaphragm outer ring, and a flow passage is formed to have its diameter expanded from an upstream stage to a downstream stage. In such axial flow turbine, trailing edges at ends of the nozzle blade supported by the diaphragm inner ring and the diaphragm outer ring are curved as a curvature to an outlet side, and an intermediate portion between the trailing edges is formed to be straight.

    摘要翻译: 一种轴流涡轮机,其具有由涡轮喷嘴构成的台架和沿轴向流动方向配置的涡轮机转子叶片。 涡轮喷嘴的喷嘴叶片的两端部由隔膜内圈和隔膜外圈支撑,形成从上游侧到下游侧的直径扩大的流路。 在这种轴流式涡轮机中,由隔膜内圈和隔膜外圈支撑的喷嘴的端部处的后缘作为曲率弯曲到出口侧,并且后缘之间的中间部分形成为直的。

    Semiconductor light emitting device and method for producing the same
    10.
    发明授权
    Semiconductor light emitting device and method for producing the same 失效
    半导体发光器件及其制造方法

    公开(公告)号:US07042023B2

    公开(公告)日:2006-05-09

    申请号:US10625234

    申请日:2003-07-22

    申请人: Kentaro Tani

    发明人: Kentaro Tani

    IPC分类号: H01L21/00 H01L33/00

    摘要: A semiconductor light emitting device includes a semiconductor substrate; a stacked semiconductor structure formed on the semiconductor substrate; a striped ridge structure; and a semiconductor current confinement layer provided on a side surface of the striped ridge structure. The stacked semiconductor structure includes a first semiconductor clad layer, a semiconductor active layer, a second semiconductor clad layer, and a semiconductor etching stop layer. The striped ridge structure includes a third semiconductor clad layer, a semiconductor intermediate layer, and a semiconductor cap layer. The striped ridge structure is provided on the semiconductor etching stop layer. An interface between the semiconductor current confinement layer and the semiconductor etching stop layer and an interface between the semiconductor current confinement layer and the striped ridge structure each have a content of impurities of less than 1×1017/cm3.

    摘要翻译: 半导体发光器件包括半导体衬底; 形成在所述半导体衬底上的层叠半导体结构; 条纹脊结构; 以及设置在条纹脊结构的侧面上的半导体电流限制层。 堆叠的半导体结构包括第一半导体包覆层,半导体有源层,第二半导体包覆层和半导体蚀刻停止层。 条纹脊结构包括第三半导体包覆层,半导体中间层和半导体盖层。 在半导体蚀刻停止层上设置条纹脊结构。 半导体电流限制层和半导体蚀刻停止层之间的界面以及半导体电流限制层和条纹脊结构之间的界面各自具有小于1×10 17 / cm 2的杂质含量 > 3