公开(公告)号：US20130296613A1

公开(公告)日：2013-11-07

申请号：US13989920

申请日：2011-11-25

Applicant: Akinobu Kishi ,  Satoshi Doi ,  Taiji Matsukawa ,  Takeki Matsui ,  Yasumasa Yamada ,  Ichiro Yamada

Inventor： Akinobu Kishi ,  Satoshi Doi ,  Taiji Matsukawa ,  Takeki Matsui ,  Yasumasa Yamada ,  Ichiro Yamada

IPC: C07C39/19 ,  A23L1/30 ,  C07C43/23 ,  C07C41/30 ,  C07C37/16

CPC classification number: C07C39/19 ,  A23L33/105 ,  C07C37/14 ,  C07C37/16 ,  C07C39/21 ,  C07C41/30 ,  C07C43/23

Abstract: A process for producing a hydroxystilbene derivative represented by formula (1) (wherein X1-X4 independently represent a hydrogen atom, a hydroxy group, a saturated or unsaturated linear or branched alkoxy group having 1-10 carbon atoms, or a saturated or unsaturated linear or branched alkyl group having 1-10 carbon atoms; Z1 and Z2 independently represent a hydrogen atom, or a group represented by the formula (2) (wherein X5 and X6 independently represent a hydrogen atom, a hydroxy group, a saturated or unsaturated linear or branched alkoxy group having 1-10 carbon atoms, or a saturated or unsaturated linear or branched alkyl group having 1-10 carbon atoms); and Z1 and Z2 may be the same as or different from each other; wherein X1-X6 may be the same as or different from one another), which is characterized by heating a 4-hydroxycinnamic acid compound and a hydroxystilbene compound in the presence of a metal salt.

Abstract translation: 一种制备由式（1）表示的羟基茋衍生物的方法（其中X 1 -X 4独立地表示氢原子，羟基，具有1-10个碳原子的饱和或不饱和直链或支链烷氧基，或饱和或不饱和直链 或具有1-10个碳原子的支链烷基; Z1和Z2独立地表示氢原子或由式（2）表示的基团（其中X5和X6独立地表示氢原子，羟基，饱和或不饱和直链 或具有1-10个碳原子的支链烷氧基，或具有1-10个碳原子的饱和或不饱和直链或支链烷基）;并且Z1和Z2可以相同或不同;其中X1-X6可以是 相同或不同），其特征在于在金属盐的存在下加热4-羟基肉桂酸化合物和羟基茋化合物。

公开(公告)号：US06890783B2

公开(公告)日：2005-05-10

申请号：US10242011

申请日：2002-09-12

Applicant: Shigeru Kimura ,  Takahiko Watanabe ,  Tae Yoshikawa ,  Hiroyuki Uchida ,  Shusaku Kido ,  Shinichi Nakata ,  Tsutomu Hamada ,  Hisanobu Shimodouzono ,  Satoshi Doi ,  Toshihiko Harano ,  Akitoshi Maeda ,  Satoshi Ihida ,  Hiroaki Tanaka ,  Takasuke Hayase ,  Shouichi Kuroha ,  Hirofumi Ihara ,  Kazushige Takechi

Inventor： Shigeru Kimura ,  Takahiko Watanabe ,  Tae Yoshikawa ,  Hiroyuki Uchida ,  Shusaku Kido ,  Shinichi Nakata ,  Tsutomu Hamada ,  Hisanobu Shimodouzono ,  Satoshi Doi ,  Toshihiko Harano ,  Akitoshi Maeda ,  Satoshi Ihida ,  Hiroaki Tanaka ,  Takasuke Hayase ,  Shouichi Kuroha ,  Hirofumi Ihara ,  Kazushige Takechi

IPC: G02F1/1343 ,  G02F1/136 ,  G02F1/1368 ,  G09F9/30 ,  H01L21/00 ,  H01L21/3205 ,  H01L21/336 ,  H01L21/84 ,  H01L23/52 ,  H01L29/423 ,  H01L29/43 ,  H01L29/49 ,  H01L29/786 ,  H01L31/036

CPC classification number: G02F1/134363

Abstract: An active matrix substrate plate having superior properties is manufactured at high yield using four photolithographic fabrication steps. In step 1, the scanning line and the gate electrode extending from the scanning line are formed in the glass plate. In step 2, the gate insulation layer and the semiconductor layer comprised by amorphous silicon layer and n+ amorphous silicon layer is laminated to provide the semiconductor layer for the TFT section. In step 3, the transparent conductive layer and the metallic layer are laminated, and the signal line, the drain electrode extending from the signal line, the pixel electrode and the source electrode extending from the pixel electrode are formed, and the n+ amorphous silicon layer of the channel gap is removed by etching. In step 4, the protective insulation layer is formed, and the protective insulation layer and the metal layer above the pixel electrode are removed by etching.

Abstract translation: 使用四个光刻制造步骤以高产率制造具有优异性能的有源矩阵基板。 在步骤1中，扫描线和从扫描线延伸的栅电极形成在玻璃板中。 在步骤2中，层叠由非晶硅层和n + +非晶硅层构成的栅绝缘层和半导体层，以提供TFT部分的半导体层。 在步骤3中，层叠透明导电层和金属层，形成信号线，从信号线延伸的漏极，从像素电极延伸的像素电极和源电极， 通过蚀刻除去沟道间隙的+非晶硅层。 在步骤4中，形成保护绝缘层，通过蚀刻除去保护绝缘层和像素电极上方的金属层。

公开(公告)号：US06872603B2

公开(公告)日：2005-03-29

申请号：US10705864

申请日：2003-11-13

Applicant: Satoshi Doi

Inventor： Satoshi Doi

IPC: H01L23/52 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/336 ,  H01L29/417 ,  H01L29/45 ,  H01L29/49 ,  H01L29/786 ,  H01L21/00 ,  H01L21/302 ,  H01L21/44

CPC classification number: H01L29/66765 ,  H01L29/41733 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/78669

Abstract: A method of fabricating a semiconductor device including an interconnection is provided. The method is composed of covering a substrate with a metal film stack including a lower refractory metal film over the substrate, a lower protective layer of a first compound including metal disposed on an upper surface of the lower refractory metal film, a core metal film of the metal on an upper surface of the lower protective layer, an upper protective layer of a second compound including the metal disposed on an upper surface of the core metal film, and an upper refractory metal film disposed on an upper surface of the upper protective layer, patterning the metal film stack; and forming a side protective layer of a third compound including the metal on a side of the patterned core metal film.

Abstract translation: 提供一种制造包括互连的半导体器件的方法。 该方法包括：在基板上覆盖包括下部难熔金属膜的金属膜堆叠的基板，包括设置在下部难熔金属膜的上表面上的金属的第一化合物的下部保护层， 下保护层的上表面上的金属，设置在芯金属膜的上表面上的金属的第二化合物的上保护层和设置在上保护层的上表面上的上耐火金属膜 图案化金属膜堆叠; 以及在所述图案化的芯金属膜的一侧上形成包括所述金属的第三化合物的侧保护层。

公开(公告)号：US06632696B2

公开(公告)日：2003-10-14

申请号：US09745657

申请日：2000-12-20

Applicant: Shigeru Kimura ,  Takahiko Watanabe ,  Tae Yoshikawa ,  Hiroyuki Uchida ,  Shusaku Kido ,  Shinichi Nakata ,  Tsutomu Hamada ,  Hisanobu Shimodouzono ,  Satoshi Doi ,  Toshihiko Harano ,  Akitoshi Maeda ,  Satoshi Ihida ,  Hiroaki Tanaka ,  Takasuke Hayase ,  Shouichi Kuroha ,  Hirofumi Ihara ,  Kazushige Takechi

Inventor： Shigeru Kimura ,  Takahiko Watanabe ,  Tae Yoshikawa ,  Hiroyuki Uchida ,  Shusaku Kido ,  Shinichi Nakata ,  Tsutomu Hamada ,  Hisanobu Shimodouzono ,  Satoshi Doi ,  Toshihiko Harano ,  Akitoshi Maeda ,  Satoshi Ihida ,  Hiroaki Tanaka ,  Takasuke Hayase ,  Shouichi Kuroha ,  Hirofumi Ihara ,  Kazushige Takechi

IPC: H01L2100

CPC classification number: G02F1/134363

Abstract: An active matrix substrate plate having superior properties is manufactured at high yield using four photolithographic fabrication steps. In step 1, the scanning line and the gate electrode extending from the scanning line are formed in the glass plate. In step 2, the gate insulation layer and the semiconductor layer comprised by amorphous silicon layer and n+ amorphous silicon layer is laminated to provide the semiconductor layer for the TFT section. In step 3, the transparent conductive layer and the metallic layer are laminated, and the signal line, the drain electrode extending from the signal line, the pixel electrode and the source electrode extending from the pixel electrode are formed, and the n+ amorphous silicon layer of the channel gap is removed by etching. In step 4, the protective insulation layer is formed, and the protective insulation layer and the metal layer above the pixel electrode are removed by etching.

Abstract translation: 使用四个光刻制造步骤以高产率制造具有优异性能的有源矩阵基板。 在步骤 1 中，扫描线和从扫描线延伸的栅电极形成在玻璃板中。 在步骤 2 中，将由非晶硅层和n 非晶硅层组成的栅极绝缘层和半导体层层压到 提供TFT部分的半导体层。 在步骤 3 中，层叠透明导电层和金属层，信号线，从信号线延伸的漏电极，像素电极和源电极延伸 形成像素电极，并且通过蚀刻去除通道间隙的n 非晶硅层。 在步骤 4 中，形成保护绝缘层，通过蚀刻去除保护绝缘层和像素电极上方的金属层。

公开(公告)号：US09051245B2

公开(公告)日：2015-06-09

申请号：US14353882

申请日：2011-10-27

Applicant: Akinobu Kishi ,  Satoshi Doi ,  Taiji Matsukawa ,  Takeki Matsui ,  Yasumasa Yamada ,  Ichiro Yamada

Inventor： Akinobu Kishi ,  Satoshi Doi ,  Taiji Matsukawa ,  Takeki Matsui ,  Yasumasa Yamada ,  Ichiro Yamada

IPC: C07C39/23 ,  C07C37/14

CPC classification number: C07C39/23 ,  C07C37/14

Abstract: This invention relates to a resveratrol polymerization compound represented by Formula (1) (in which, in Formula (1), R1 and R2 represent —OH or Formula (2) and R1 and R2 are not the same) or a pharmaceutically acceptable salt thereof and an anticancer agent, an anticancer agent for oral cancer, an antioxidant, an antibacterial agent, a lipase inhibitor, an antiobesity agent, a therapeutic agent for skin diseases, a food, a pharmaceutical agent, a quasi drug, or a cosmetic containing one or more compounds selected from the group consisting of the resveratrol polymerization compound and the pharmaceutically acceptable salt thereof.

Abstract translation: 本发明涉及由式（1）表示的白藜芦醇聚合化合物或其药学上可接受的盐，其中在式（1）中，R 1和R 2表示-OH或式（2），R 1和R 2不相同） 抗癌剂，口服癌症用抗癌剂，抗氧化剂，抗菌剂，脂肪酶抑制剂，抗肥胖剂，皮肤病治疗剂，食品，药剂，准药或含有化妆品的化妆品 或更多选自白藜芦醇聚合化合物及其药学上可接受的盐的化合物。

公开(公告)号：US20130310611A1

公开(公告)日：2013-11-21

申请号：US13882032

申请日：2011-10-27

Applicant: Akinobu Kishi ,  Satoshi Doi ,  Taiji Matsukawa ,  Takeki Matsui ,  Yasumasa Yamada ,  Ichiro Yamada

Inventor： Akinobu Kishi ,  Satoshi Doi ,  Taiji Matsukawa ,  Takeki Matsui ,  Yasumasa Yamada ,  Ichiro Yamada

IPC: C07C37/11 ,  C07C39/21 ,  C07C43/23 ,  C07C41/01

CPC classification number: C07C37/11 ,  C07C37/14 ,  C07C39/21 ,  C07C41/01 ,  C07C41/30 ,  C07C43/23

Abstract: A process for producing a phenolic polymerizable compound represented by formula (1) or (2); wherein X1-X9 independently represent a hydrogen atom, a hydroxy group, a saturated or unsaturated linear or branched alkoxy group having 1-10 carbon atoms, or a saturated or unsaturated linear or branched alkyl group having 1-10 carbon atoms; Y represents a hydrogen atom, a hydroxy group, a saturated or unsaturated linear or branched alkoxy group having 1-10 carbon atoms, a saturated or unsaturated linear or branched alkyl group having 1-10 carbon atoms, or a group represented by formula (6); and Z represents a hydrogen atom or a group represented by formula (3), which is characterized by heating a 4-hydroxycinnamic acid compound in the presence of a metal salt.

Abstract translation: 一种制备由式（1）或（2）表示的酚类可聚合化合物的方法; 其中X1-X9独立地表示氢原子，羟基，具有1-10个碳原子的饱和或不饱和直链或支链烷氧基或具有1-10个碳原子的饱和或不饱和直链或支链烷基; Y表示氢原子，羟基，具有1-10个碳原子的饱和或不饱和直链或支链烷氧基，具有1-10个碳原子的饱和或不饱和直链或支链烷基或由式（6）表示的基团 ）; Z表示氢原子或式（3）表示的基团，其特征在于在金属盐的存在下加热4-羟基肉桂酸化合物。

公开(公告)号：US07087624B2

公开(公告)日：2006-08-08

申请号：US10693461

申请日：2003-10-27

Applicant: Nobuyoshi Minami ,  Michitaka Sato ,  Koichi Hasumi ,  Norio Yamamoto ,  Katsuyuki Keino ,  Teruaki Matsui ,  Arihiro Kanada ,  Shuji Ohta ,  Takahisa Saito ,  Shuichiro Sato ,  Akira Asagarasu ,  Satoshi Doi ,  Motohiro Kobayashi ,  Jun Sato ,  Hajime Asano

Inventor： Nobuyoshi Minami ,  Michitaka Sato ,  Koichi Hasumi ,  Norio Yamamoto ,  Katsuyuki Keino ,  Teruaki Matsui ,  Arihiro Kanada ,  Shuji Ohta ,  Takahisa Saito ,  Shuichiro Sato ,  Akira Asagarasu ,  Satoshi Doi ,  Motohiro Kobayashi ,  Jun Sato ,  Hajime Asano

IPC: A61K31/44 ,  C07D40/00

CPC classification number: C07D231/12 ,  A61K31/4439 ,  A61K31/4709 ,  A61K31/4725 ,  C07D233/56 ,  C07D249/08 ,  C07D401/04 ,  C07D401/14 ,  C07D405/14 ,  Y02A50/411

Abstract: Substituted pyrazole compounds represented by formula (I), or salts thereof are disclosed, wherein R1 is —CH(OH)—CH(R4)-(A)n-Y, —CH2—CH(R4)-(A)n-Y, —CO-B1-A-Y or the like (wherein A is a lower alkylene; Y is an aryl group which may be substituted, for example, by halogen, or the like; R4 is a hydrogen atom or a lower alkyl group; B1 is —CH(R4)— or —N(R4)—; and n is 0 or 1); R2 is a hydrogen atom, a lower alkyl group which may be substituted by hydroxyl or the like, or an aralkyl group; R3 is a phenyl group which may be substituted by halogen or the like, or a pyridyl group; and Q is a pyridyl or quinolyl group. These substituted pyrazole compounds or their salts have an excellent p38MAP kinase inhibiting effect and are hence useful in the prevention or treatment of tumor necrosis factor α-related diseases, interleukin 1-related diseases, interleukin 6-related diseases or cyclooxygenase II-related diseases

Abstract translation: 公开了由式（I）表示的取代的吡唑化合物或其盐，其中R 1是-CH（OH）-CH（R 4） - （A） -CH（R 4） - （A）n -Y， - CO（CH 2） -B 1 -I 1等（其中A是低级亚烷基; Y是可以被卤素取代的芳基等）; R 4， SUP>是氢原子或低级烷基; B 1是-CH（R 4） - 或-N（R 4） - ;和n为0或1）; R 2是氢原子，可以被羟基等取代的低级烷基或芳烷基; R 3是可以被卤素等取代的苯基或吡啶基; Q为吡啶基或喹啉基。 这些取代的吡唑化合物或其盐具有优异的p38MAP激酶抑制作用，因此可用于预防或治疗肿瘤坏死因子α相关疾病，白细胞介素1相关疾病，白细胞介素6相关疾病或环氧合酶II相关疾病

公开(公告)号：USD500098S1

公开(公告)日：2004-12-21

申请号：US29188349

申请日：2003-08-19

Applicant: Satoshi Doi

Designer： Satoshi Doi

公开(公告)号：US5900161A

公开(公告)日：1999-05-04

申请号：US757428

申请日：1996-11-27

Applicant: Satoshi Doi

Inventor： Satoshi Doi

IPC: H05H1/46 ,  C23C16/44 ,  C23C16/50 ,  C23F4/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H05H1/00 ,  C23C16/00 ,  G01N21/00

CPC classification number: H01J37/32935 ,  C23C16/4405 ,  H01J37/32963 ,  Y10S438/905

Abstract: For use with CVD apparatus, an apparatus and method for detecting the end point of a post treatment after an in-situ cleaning operation is provided such that reactive chemical species which remain after an in-situ cleaning operation can be accurately removed so that they do not cause harm to a film formed after the cleaning operation. The end point detection apparatus includes a reactor, an RF electrode, an RF power supply, a gas supply pipe for forming a thin film, a gas supply pipe for in-situ cleaning, a detector for detecting discharge characteristic values (i.e. the self-bias voltage, the electrode voltage, and the discharge impedance) during the post treatment performed after the in-situ cleaning, and a monitor/determining circuit for monitoring an output from the detector. When a post treatment is performed in the reactor after in-situ cleaning, a gas for in-situ cleaning is introduced through the gas supply pipe, and the reactor is in-situ cleaned using reactive chemical species, after which the post treatment is performed in the reactor so that the remaining reactive chemical species are removed. During the post treatment, the discharge characteristic values are measured, and the point in time at which the changes in the measured values shift to nearly constant values is assumed to be the end point of the post treatment.

Abstract translation: 为了与CVD装置一起使用，提供了一种用于在原位清洁操作之后检测后处理的终点的装置和方法，使得可以精确地去除在原位清洁操作之后留下的反应性化学物质，使得它们 不会对清洁作业后形成的电影造成伤害。 端点检测装置包括电抗器，RF电极，RF电源，用于形成薄膜的气体供给管，用于原位清洁的气体供给管，用于检测放电特性值的检测器（即， 偏置电压，电极电压和放电阻抗），以及用于监视来自检测器的输出的监视/确定电路。 当在原位清洗后在反应器中进行后处理时，通过气体供给管引入用于原位清洗的气体，并且使用反应性化学物质原位清洁反应器，然后进行后处理 在反应器中使得剩余的反应性化学物质被除去。 在后处理中，测量放电特性值，将测量值的变化转变为几乎恒定值的时间点被假设为后处理的终点。

公开(公告)号：US08727453B2

公开(公告)日：2014-05-20

申请号：US13044853

申请日：2011-03-10

Applicant: Norihiro Saita ,  Taichi Shibata ,  Masamichi Imamura ,  Shinichiro Nishida ,  Satoshi Doi ,  Tadaharu Yokota

Inventor： Norihiro Saita ,  Taichi Shibata ,  Masamichi Imamura ,  Shinichiro Nishida ,  Satoshi Doi ,  Tadaharu Yokota

IPC: B60T11/34 ,  F16K31/02 ,  B60T15/36

CPC classification number: B60T8/36 ,  B60T8/363 ,  B60T13/662 ,  B60T13/686

Abstract: A hydraulic pressure control apparatus has an electromagnetic valve having a valve body forced to one side by an elastic member and a coil driving the valve body to the other side; a hydraulic pressure control section for calculating a command current value to drive the electromagnetic valve and controlling a hydraulic pressure in a hydraulic circuit by opening/closing the electromagnetic valve; a current detection section detecting a value of the current passing through the coil; and a command current value correction section. The command current value correction section detects a change of an inductance of the coil when the valve body moves from the one side to the other side or from the other side to the one side through the current detection section, and corrects the command current value using the detected inductance change.

Abstract translation: 液压控制装置具有电磁阀，该电磁阀具有通过弹性部件被迫向一侧的阀体和将阀体驱动到另一侧的线圈; 液压控制部，用于计算驱动电磁阀的指令电流值，并通过打开/关闭电磁阀来控制液压回路中的液压; 检测通过所述线圈的电流的值的电流检测部; 和指令电流值校正部。 指令电流值校正部检测当阀体从一侧向另一侧移动时的线圈的电感变化，或者通过电流检测部检测线圈的另一侧向一侧的电感的变化，并且使用 检测到的电感变化。