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    Short circuit fault-tolerance in an implantable medical device
    1.
    发明授权
    Short circuit fault-tolerance in an implantable medical device 有权
    可植入医疗器械的短路容错

    公开(公告)号：US08626287B2

    公开(公告)日：2014-01-07

    申请号：US13221617

    申请日：2011-08-30

    申请人： Scott A. Hareland

    发明人： Scott A. Hareland

    IPC分类号： A61N1/39

    CPC分类号： A61N1/3918 ,  A61N1/3931 ,  A61N1/3956

    摘要： A device includes an energy storage device, a plurality of electrodes, a memory, a switching circuit, and a processing module. The energy storage device stores electrical energy for delivery of defibrillation therapy to a heart. The memory stores N therapy configurations that define which of the plurality of electrodes are used to deliver defibrillation therapy and a waveform to be applied during delivery of defibrillation therapy. The switching circuit connects the plurality of electrodes to the energy storage device. The processing module controls the switching circuit to deliver defibrillation therapy according to a first therapy configuration of the N therapy configurations, detects a short circuit fault during delivery of the defibrillation therapy according to the first therapy configuration, and selects a second therapy configuration of the N therapy configurations based on when the short circuit fault was detected during delivery of the defibrillation therapy according to the first therapy configuration.

    摘要翻译： 一种装置包括能量存储装置，多个电极，存储器，开关电路和处理模块。 能量存储装置存储用于向心脏递送除颤疗法的电能。 存储器存储N种治疗配置，其限定多个电极中的哪一个用于递送除颤疗法和在除颤治疗递送期间施加的波形。 开关电路将多个电极连接到能量存储装置。 所述处理模块根据所述N种治疗方式的第一治疗结构，控制所述切换电路进行除颤治疗，根据所述第一治疗结构检测所述除颤疗法的输送期间的短路故障，并选择所述N次 基于根据第一治疗配置在除颤治疗递送期间检测到短路故障的治疗配置。

    Method of fabricating a robust gate dielectric using a replacement gate flow
    4.
    发明授权
    Method of fabricating a robust gate dielectric using a replacement gate flow 失效
    使用更换栅流制造坚固的栅极电介质的方法

    公开(公告)号：US07078750B2

    公开(公告)日：2006-07-18

    申请号：US11026066

    申请日：2004-12-30

    申请人： Scott A. Hareland ,  Mark L. Doczy ,  Robert S. Chau

    发明人： Scott A. Hareland ,  Mark L. Doczy ,  Robert S. Chau

    IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

    CPC分类号： H01L21/28185 ,  H01L21/26586 ,  H01L21/28194 ,  H01L21/28202 ,  H01L29/512 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66545

    摘要： A method is described for selectively treating the properties of a gate dielectric near corners of the gate without altering the gate dielectric in a center region of a gate channel. The method includes providing a structure having a gate opening and depositing a layer of dielectric with a high dielectric constant on a bottom surface and side walls of the gate opening. The corner regions of the high dielectric constant layer formed adjacent to the bottom surface and the side walls of the gate opening are selectively treated without altering the center region of the high dielectric constant layer formed at the bottom surface of the gate opening.

    摘要翻译： 描述了一种方法，用于选择性地处理在栅极角附近的栅极电介质的性质，而不改变栅极沟道的中心区域中的栅极电介质。 该方法包括提供具有栅极开口并且在栅极开口的底表面和侧壁上沉积具有高介电常数的电介质层的结构。 选择性地处理邻近底表面和栅极开口形成的高介电常数层的角区域，而不改变形成在栅极开口底表面处的高介电常数层的中心区域。

    FAULT-TOLERANT HIGH VOLTAGE DELIVERY IN AN IMPLANTABLE MEDICAL DEVICE
    5.
    发明申请
    FAULT-TOLERANT HIGH VOLTAGE DELIVERY IN AN IMPLANTABLE MEDICAL DEVICE 有权
    在可移植医疗设备中的容错高压输送

    公开(公告)号：US20130053910A1

    公开(公告)日：2013-02-28

    申请号：US13221558

    申请日：2011-08-30

    申请人： Scott A. Hareland

    发明人： Scott A. Hareland

    IPC分类号： A61N1/39

    CPC分类号： A61N1/3937 ,  A61N1/3918 ,  A61N1/3925 ,  A61N2001/083

    摘要： A medical device includes an energy storage device, a plurality of electrodes, a memory, a switching circuit, and a processing module. The energy storage device stores electrical energy for delivery of defibrillation therapy to a heart. The memory stores N therapy configurations, each of the N therapy configurations defining which of the plurality of electrodes are used to deliver defibrillation therapy and further defining a waveform to be applied during delivery of defibrillation therapy. The switching circuit is configured to connect the plurality of electrodes to the energy storage device. The processing module is configured to control the switching circuit to deliver defibrillation therapy according to a first therapy configuration, detect a fault during delivery of the defibrillation therapy according to the first therapy configuration, and select a second therapy configuration based on when the fault was detected during delivery of the defibrillation therapy according to the first therapy configuration.

    摘要翻译： 医疗装置包括能量存储装置，多个电极，存储器，开关电路和处理模块。 能量存储装置存储用于向心脏递送除颤疗法的电能。 存储器存储N个治疗配置，N个治疗配置中的每个配置限定多个电极中的哪一个用于递送除颤治疗，并进一步限定在递送除颤治疗期间应用的波形。 开关电路被配置为将多个电极连接到能量存储装置。 处理模块被配置为根据第一治疗配置来控制切换电路进行除颤治疗，根据第一治疗配置检测除颤治疗期间的故障，并且基于检测到故障时选择第二治疗配置 在根据第一疗法配置的除颤疗法递送期间。

    Method of forming sub-micron-size structures over a substrate
    8.
    发明授权
    Method of forming sub-micron-size structures over a substrate 失效
    在基底上形成亚微米级结构的方法

    公开(公告)号：US06887395B2

    公开(公告)日：2005-05-03

    申请号：US10364281

    申请日：2003-02-10

    申请人： Scott A. Hareland ,  Brian S. Doyle ,  Robert S. Chau

    发明人： Scott A. Hareland ,  Brian S. Doyle ,  Robert S. Chau

    IPC分类号： B44C1/22 ,  B81B1/00 ,  B81C1/00 ,  H01L21/00 ,  H01L29/06 ,  H01L29/12

    CPC分类号： H01L29/0665 ,  B82Y10/00 ,  B82Y30/00 ,  H01L29/0673 ,  Y10S438/947

    摘要： A method is provided for forming sub-micron-size structures over a substrate. A width-defining step is formed over the substrate. A width-defining layer is formed over an edge of the width-defining step. The width-defining layer is etched back to leave a spacer adjacent the width-defining step. A length-defining step is formed over the substrate. A length-defining layer is formed over an edge of the length-defining step. The length-defining layer is etched back to leave a spacer adjacent a first edge of the length-defining step and across a first portion of the spacer left by the width-defining layer. The length-defining step is then removed. The spacer left by the width-defining layer is then etched with the spacer left by the length-defining layer serving as a mask, to form the structure.

    摘要翻译： 提供了一种在衬底上形成亚微米级结构的方法。 在衬底上形成宽度限定步骤。 宽度限定层形成在宽度限定步骤的边缘上。 将宽度限定层回蚀刻以在宽度限定步骤附近留下间隔物。 在衬底上形成长度限定步骤。 长度限定层形成在长度限定步骤的边缘上。 长度限定层被回蚀刻以在与长度限定步骤的第一边缘相邻并且横跨由宽度限定层留下的间隔物的第一部分附近留下间隔物。 然后去除长度定义步骤。 然后由宽度限定层留下的间隔物用作为掩模的长度限定层留下的间隔物进行蚀刻，以形成结构。